Patent
US 7,872,276OF THE INVENTION
Su Yeol LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 7,872,276Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical gallium nitride-based light emitting diode (GaN-based LED) comprising: an n-electrode; a light emission structure formed under the n-electrode; a protective film formed on the outer surface of the light emission structure; a p-electrode formed under the light emission structure where the protective film is formed; a metal seed layer formed on the light emission structure and the entire surface of the p- electrode; and a conductive substrate formed under the metal seed layer.
The GaN-based LED according to claim 1, wherein the light emission structure includes an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer.
The GaN-based LED according to claim 1 further comprising a current blocking layer formed in the central portion of the lower surface of the light emission structure.
The GaN-based LED according to claim 1, wherein the conductive substrate includes first and second plated layers.
A vertical GaN-based semiconductor LED comprising: a conductive substrate; a metal seed layer formed on the conductive substrate; a current blocking layer formed on [[the]] a central portion of the metal seed layer; a first electrode formed on the metal seed layer and on either side of the current blocking layer; a protective film formed on [[the]] an outer surface of a light emission structure formed on the first electrode; and a second electrode formed on the light emission structure[[;)], wherein the conductive substrate includes first and second plated layers and the second plated layer surrounds lower parts and side surfaces of the first plating layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the light emission structure includes a p-type GaN-based semiconductor layer, an active layer, and an n-type GaN-based semiconductor layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first electrode is a p-electrode.
The vertical GaN-based semiconductor LED according to claim 8, 3 Docket No.:2336-747 PATENT wherein the second electrode is an n-electrode.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The vertical GaN-based semiconductor LED according to claim 8, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
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A method of manufacturing a vertical GaN-based LED comprising: forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light 4 Docket No.:2336-747 PATENT emission structures.
The method according to claim 16, wherein the non-conductive material is photoresist.
The method according to claim 16 further comprising, before the forming of the p-electrode, forming an insulating layer along the upper surface of the substrate including the divided light emission structures; and selectively etching the insulating layer such that a current blocking layer is formed on the central portion of the upper surface of the light emission structure, and simultaneously, a protective film is formed in either side surface of the light emission structure.
The method according to claim 16 further comprising, after the forming of the light emission structure, removing a lower portion of the substrate by a predetermined thickness through a lapping and polishing process.
The method according to claim 16, wherein the forming of the first plated layer includes: forming photoresists on the metal seed layer between the light emission structures; forming the first plated layer on the metal seed layer between the photoresists; and removing the photoresists.
The method according to claim 16, wherein the removing of the portions of the metal seed layer and the second plated layer is performed through any one of dicing, scribing, and wet-etching.
The method according to claim 16 further comprising, before the forming of the n-electrode, forming surface irregularities on the n-type GaN-based semiconductor layer; and 5 Docket No.:2336-747 PATENT forming a contact hole by removing a portion of the n-type GaN-based semiconductor layer, where the n-electrode is to be formed, by a predetermined thickness.
The method according to claim 16, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The method according to claim 16, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
A vertical GaN-based LED comprising: an n-electrode; an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of reflecting electrodes formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a barrier layer formed under the p-type GaN-based semiconductor layer including the reflecting electrodes; and a structure support layer formed under the barrier layer.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed in any shape selected from the group consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The vertical GaN-based LED according to claim 25, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The vertical GaN-based LED according to claim 25, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The vertical GaN-based LED according to claim 25 further comprising a bonding layer formed between the barrier layer and the structure support layer.
A vertical GaN-based LED comprising: an n-electrode; 7 Docket No.:2336-747 PATENT an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under-the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of barrier layers formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a reflecting electrode formed under the p-type GaN-based semiconductor layer including the barrier layers; and a structure support layer formed under the reflecting electrode.
The vertical GaN-based LED according to claim 35, wherein the barrier layer is formed of an insulating film.
A method of manufacturing a vertical GaN-based LED comprising: forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of reflecting electrodes on the p-type GaN-based semiconductor layer, the plurality of reflecting electrodes being spaced at a predetermined distance from each other; forming a barrier layer on the p-type GaN-based semiconductor layer including the reflecting electrodes; forming a structure support layer on the barrier layer; removing the sapphire substrate through an LLO (laser lift-of f) process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
The method according to claim 37, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The method according to claim 37, wherein the reflecting electrode is formed in any one shape selected from the group 8 Docket No.:2336-747 PATENT consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The method according to claim 37, wherein the reflecting electrode is formed to have a width of 0.5 to 500 pm.
The method according to claim 37, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The method according to claim 37, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The method according to claim 37 further comprising, before the forming of the structure support layer, forming a bonding layer on the overall structure where the barrier layer is formed.
A method of manufacturing a vertical GaN-based LED comprising: sequentially forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of barrier layers on the p-type GaN-based semiconductor layer, the plurality of barrier layers being spaced at a predetermined distance from each other; forming a reflecting electrode on the p-type GaN-based semiconductor layer including the barrier layer; forming a structure support layer on the reflecting electrode; removing the sapphire substrate through an LLO process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based LED (plated substrate type)
Materials described outside the worked examples.
GaN-based semiconductor
metal seed layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 2336-747 PA | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,872,276Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical gallium nitride-based light emitting diode (GaN-based LED) comprising: an n-electrode; a light emission structure formed under the n-electrode; a protective film formed on the outer surface of the light emission structure; a p-electrode formed under the light emission structure where the protective film is formed; a metal seed layer formed on the light emission structure and the entire surface of the p- electrode; and a conductive substrate formed under the metal seed layer.
The GaN-based LED according to claim 1, wherein the light emission structure includes an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer.
The GaN-based LED according to claim 1 further comprising a current blocking layer formed in the central portion of the lower surface of the light emission structure.
The GaN-based LED according to claim 1, wherein the conductive substrate includes first and second plated layers.
A vertical GaN-based semiconductor LED comprising: a conductive substrate; a metal seed layer formed on the conductive substrate; a current blocking layer formed on [[the]] a central portion of the metal seed layer; a first electrode formed on the metal seed layer and on either side of the current blocking layer; a protective film formed on [[the]] an outer surface of a light emission structure formed on the first electrode; and a second electrode formed on the light emission structure[[;)], wherein the conductive substrate includes first and second plated layers and the second plated layer surrounds lower parts and side surfaces of the first plating layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the light emission structure includes a p-type GaN-based semiconductor layer, an active layer, and an n-type GaN-based semiconductor layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first electrode is a p-electrode.
The vertical GaN-based semiconductor LED according to claim 8, 3 Docket No.:2336-747 PATENT wherein the second electrode is an n-electrode.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The vertical GaN-based semiconductor LED according to claim 8, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
.
A method of manufacturing a vertical GaN-based LED comprising: forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light 4 Docket No.:2336-747 PATENT emission structures.
The method according to claim 16, wherein the non-conductive material is photoresist.
The method according to claim 16 further comprising, before the forming of the p-electrode, forming an insulating layer along the upper surface of the substrate including the divided light emission structures; and selectively etching the insulating layer such that a current blocking layer is formed on the central portion of the upper surface of the light emission structure, and simultaneously, a protective film is formed in either side surface of the light emission structure.
The method according to claim 16 further comprising, after the forming of the light emission structure, removing a lower portion of the substrate by a predetermined thickness through a lapping and polishing process.
The method according to claim 16, wherein the forming of the first plated layer includes: forming photoresists on the metal seed layer between the light emission structures; forming the first plated layer on the metal seed layer between the photoresists; and removing the photoresists.
The method according to claim 16, wherein the removing of the portions of the metal seed layer and the second plated layer is performed through any one of dicing, scribing, and wet-etching.
The method according to claim 16 further comprising, before the forming of the n-electrode, forming surface irregularities on the n-type GaN-based semiconductor layer; and 5 Docket No.:2336-747 PATENT forming a contact hole by removing a portion of the n-type GaN-based semiconductor layer, where the n-electrode is to be formed, by a predetermined thickness.
The method according to claim 16, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The method according to claim 16, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
A vertical GaN-based LED comprising: an n-electrode; an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of reflecting electrodes formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a barrier layer formed under the p-type GaN-based semiconductor layer including the reflecting electrodes; and a structure support layer formed under the barrier layer.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed in any shape selected from the group consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The vertical GaN-based LED according to claim 25, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The vertical GaN-based LED according to claim 25, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The vertical GaN-based LED according to claim 25 further comprising a bonding layer formed between the barrier layer and the structure support layer.
A vertical GaN-based LED comprising: an n-electrode; 7 Docket No.:2336-747 PATENT an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under-the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of barrier layers formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a reflecting electrode formed under the p-type GaN-based semiconductor layer including the barrier layers; and a structure support layer formed under the reflecting electrode.
The vertical GaN-based LED according to claim 35, wherein the barrier layer is formed of an insulating film.
A method of manufacturing a vertical GaN-based LED comprising: forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of reflecting electrodes on the p-type GaN-based semiconductor layer, the plurality of reflecting electrodes being spaced at a predetermined distance from each other; forming a barrier layer on the p-type GaN-based semiconductor layer including the reflecting electrodes; forming a structure support layer on the barrier layer; removing the sapphire substrate through an LLO (laser lift-of f) process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
The method according to claim 37, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The method according to claim 37, wherein the reflecting electrode is formed in any one shape selected from the group 8 Docket No.:2336-747 PATENT consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The method according to claim 37, wherein the reflecting electrode is formed to have a width of 0.5 to 500 pm.
The method according to claim 37, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The method according to claim 37, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The method according to claim 37 further comprising, before the forming of the structure support layer, forming a bonding layer on the overall structure where the barrier layer is formed.
A method of manufacturing a vertical GaN-based LED comprising: sequentially forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of barrier layers on the p-type GaN-based semiconductor layer, the plurality of barrier layers being spaced at a predetermined distance from each other; forming a reflecting electrode on the p-type GaN-based semiconductor layer including the barrier layer; forming a structure support layer on the reflecting electrode; removing the sapphire substrate through an LLO process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based LED (plated substrate type)
Materials described outside the worked examples.
GaN-based semiconductor
metal seed layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 2336-747 PA | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,872,276Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical gallium nitride-based light emitting diode (GaN-based LED) comprising: an n-electrode; a light emission structure formed under the n-electrode; a protective film formed on the outer surface of the light emission structure; a p-electrode formed under the light emission structure where the protective film is formed; a metal seed layer formed on the light emission structure and the entire surface of the p- electrode; and a conductive substrate formed under the metal seed layer.
The GaN-based LED according to claim 1, wherein the light emission structure includes an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer.
The GaN-based LED according to claim 1 further comprising a current blocking layer formed in the central portion of the lower surface of the light emission structure.
The GaN-based LED according to claim 1, wherein the conductive substrate includes first and second plated layers.
A vertical GaN-based semiconductor LED comprising: a conductive substrate; a metal seed layer formed on the conductive substrate; a current blocking layer formed on [[the]] a central portion of the metal seed layer; a first electrode formed on the metal seed layer and on either side of the current blocking layer; a protective film formed on [[the]] an outer surface of a light emission structure formed on the first electrode; and a second electrode formed on the light emission structure[[;)], wherein the conductive substrate includes first and second plated layers and the second plated layer surrounds lower parts and side surfaces of the first plating layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the light emission structure includes a p-type GaN-based semiconductor layer, an active layer, and an n-type GaN-based semiconductor layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first electrode is a p-electrode.
The vertical GaN-based semiconductor LED according to claim 8, 3 Docket No.:2336-747 PATENT wherein the second electrode is an n-electrode.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The vertical GaN-based semiconductor LED according to claim 8, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
.
A method of manufacturing a vertical GaN-based LED comprising: forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light 4 Docket No.:2336-747 PATENT emission structures.
The method according to claim 16, wherein the non-conductive material is photoresist.
The method according to claim 16 further comprising, before the forming of the p-electrode, forming an insulating layer along the upper surface of the substrate including the divided light emission structures; and selectively etching the insulating layer such that a current blocking layer is formed on the central portion of the upper surface of the light emission structure, and simultaneously, a protective film is formed in either side surface of the light emission structure.
The method according to claim 16 further comprising, after the forming of the light emission structure, removing a lower portion of the substrate by a predetermined thickness through a lapping and polishing process.
The method according to claim 16, wherein the forming of the first plated layer includes: forming photoresists on the metal seed layer between the light emission structures; forming the first plated layer on the metal seed layer between the photoresists; and removing the photoresists.
The method according to claim 16, wherein the removing of the portions of the metal seed layer and the second plated layer is performed through any one of dicing, scribing, and wet-etching.
The method according to claim 16 further comprising, before the forming of the n-electrode, forming surface irregularities on the n-type GaN-based semiconductor layer; and 5 Docket No.:2336-747 PATENT forming a contact hole by removing a portion of the n-type GaN-based semiconductor layer, where the n-electrode is to be formed, by a predetermined thickness.
The method according to claim 16, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The method according to claim 16, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
A vertical GaN-based LED comprising: an n-electrode; an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of reflecting electrodes formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a barrier layer formed under the p-type GaN-based semiconductor layer including the reflecting electrodes; and a structure support layer formed under the barrier layer.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed in any shape selected from the group consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The vertical GaN-based LED according to claim 25, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The vertical GaN-based LED according to claim 25, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The vertical GaN-based LED according to claim 25 further comprising a bonding layer formed between the barrier layer and the structure support layer.
A vertical GaN-based LED comprising: an n-electrode; 7 Docket No.:2336-747 PATENT an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under-the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of barrier layers formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a reflecting electrode formed under the p-type GaN-based semiconductor layer including the barrier layers; and a structure support layer formed under the reflecting electrode.
The vertical GaN-based LED according to claim 35, wherein the barrier layer is formed of an insulating film.
A method of manufacturing a vertical GaN-based LED comprising: forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of reflecting electrodes on the p-type GaN-based semiconductor layer, the plurality of reflecting electrodes being spaced at a predetermined distance from each other; forming a barrier layer on the p-type GaN-based semiconductor layer including the reflecting electrodes; forming a structure support layer on the barrier layer; removing the sapphire substrate through an LLO (laser lift-of f) process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
The method according to claim 37, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The method according to claim 37, wherein the reflecting electrode is formed in any one shape selected from the group 8 Docket No.:2336-747 PATENT consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The method according to claim 37, wherein the reflecting electrode is formed to have a width of 0.5 to 500 pm.
The method according to claim 37, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The method according to claim 37, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The method according to claim 37 further comprising, before the forming of the structure support layer, forming a bonding layer on the overall structure where the barrier layer is formed.
A method of manufacturing a vertical GaN-based LED comprising: sequentially forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of barrier layers on the p-type GaN-based semiconductor layer, the plurality of barrier layers being spaced at a predetermined distance from each other; forming a reflecting electrode on the p-type GaN-based semiconductor layer including the barrier layer; forming a structure support layer on the reflecting electrode; removing the sapphire substrate through an LLO process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based LED (plated substrate type)
Materials described outside the worked examples.
GaN-based semiconductor
metal seed layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 2336-747 PA | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,872,276Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical gallium nitride-based light emitting diode (GaN-based LED) comprising: an n-electrode; a light emission structure formed under the n-electrode; a protective film formed on the outer surface of the light emission structure; a p-electrode formed under the light emission structure where the protective film is formed; a metal seed layer formed on the light emission structure and the entire surface of the p- electrode; and a conductive substrate formed under the metal seed layer.
The GaN-based LED according to claim 1, wherein the light emission structure includes an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer.
The GaN-based LED according to claim 1 further comprising a current blocking layer formed in the central portion of the lower surface of the light emission structure.
The GaN-based LED according to claim 1, wherein the conductive substrate includes first and second plated layers.
A vertical GaN-based semiconductor LED comprising: a conductive substrate; a metal seed layer formed on the conductive substrate; a current blocking layer formed on [[the]] a central portion of the metal seed layer; a first electrode formed on the metal seed layer and on either side of the current blocking layer; a protective film formed on [[the]] an outer surface of a light emission structure formed on the first electrode; and a second electrode formed on the light emission structure[[;)], wherein the conductive substrate includes first and second plated layers and the second plated layer surrounds lower parts and side surfaces of the first plating layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the light emission structure includes a p-type GaN-based semiconductor layer, an active layer, and an n-type GaN-based semiconductor layer.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first electrode is a p-electrode.
The vertical GaN-based semiconductor LED according to claim 8, 3 Docket No.:2336-747 PATENT wherein the second electrode is an n-electrode.
The vertical GaN-based semiconductor LED according to claim 8, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The vertical GaN-based semiconductor LED according to claim 8, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
.
A method of manufacturing a vertical GaN-based LED comprising: forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light 4 Docket No.:2336-747 PATENT emission structures.
The method according to claim 16, wherein the non-conductive material is photoresist.
The method according to claim 16 further comprising, before the forming of the p-electrode, forming an insulating layer along the upper surface of the substrate including the divided light emission structures; and selectively etching the insulating layer such that a current blocking layer is formed on the central portion of the upper surface of the light emission structure, and simultaneously, a protective film is formed in either side surface of the light emission structure.
The method according to claim 16 further comprising, after the forming of the light emission structure, removing a lower portion of the substrate by a predetermined thickness through a lapping and polishing process.
The method according to claim 16, wherein the forming of the first plated layer includes: forming photoresists on the metal seed layer between the light emission structures; forming the first plated layer on the metal seed layer between the photoresists; and removing the photoresists.
The method according to claim 16, wherein the removing of the portions of the metal seed layer and the second plated layer is performed through any one of dicing, scribing, and wet-etching.
The method according to claim 16 further comprising, before the forming of the n-electrode, forming surface irregularities on the n-type GaN-based semiconductor layer; and 5 Docket No.:2336-747 PATENT forming a contact hole by removing a portion of the n-type GaN-based semiconductor layer, where the n-electrode is to be formed, by a predetermined thickness.
The method according to claim 16, wherein the first plated layer has a two-layer structure in which Ni and Au are sequentially laminated.
The method according to claim 16, wherein the second plated layer has a three-layer structure in which Au, Ni, and Au are sequentially laminated.
A vertical GaN-based LED comprising: an n-electrode; an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of reflecting electrodes formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a barrier layer formed under the p-type GaN-based semiconductor layer including the reflecting electrodes; and a structure support layer formed under the barrier layer.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The vertical GaN-based LED according to claim 25, wherein the reflecting electrode is formed in any shape selected from the group consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The vertical GaN-based LED according to claim 25, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The vertical GaN-based LED according to claim 25, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The vertical GaN-based LED according to claim 25 further comprising a bonding layer formed between the barrier layer and the structure support layer.
A vertical GaN-based LED comprising: an n-electrode; 7 Docket No.:2336-747 PATENT an n-type GaN-based semiconductor layer formed under the n-electrode; an active layer formed under-the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer formed under the active layer; a plurality of barrier layers formed under the p-type GaN-based semiconductor layer so as to be spaced at a predetermined distance from each other; a reflecting electrode formed under the p-type GaN-based semiconductor layer including the barrier layers; and a structure support layer formed under the reflecting electrode.
The vertical GaN-based LED according to claim 35, wherein the barrier layer is formed of an insulating film.
A method of manufacturing a vertical GaN-based LED comprising: forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of reflecting electrodes on the p-type GaN-based semiconductor layer, the plurality of reflecting electrodes being spaced at a predetermined distance from each other; forming a barrier layer on the p-type GaN-based semiconductor layer including the reflecting electrodes; forming a structure support layer on the barrier layer; removing the sapphire substrate through an LLO (laser lift-of f) process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
The method according to claim 37, wherein the reflecting electrode is formed with a single-layer or multi-layer structure composed of one or more elements selected from the group consisting of Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W and an alloy including at least one of the elements.
The method according to claim 37, wherein the reflecting electrode is formed in any one shape selected from the group 8 Docket No.:2336-747 PATENT consisting of an equilateral polygon, a circle, an asymmetric polygon, an ellipse, and a combination thereof.
The method according to claim 37, wherein the reflecting electrode is formed to have a width of 0.5 to 500 pm.
The method according to claim 37, wherein the barrier layer is formed of metal or TCO (transparent conductive oxide).
The method according to claim 37, wherein the barrier layer composed of an insulating film is formed to expose portions of the reflecting electrodes such that the reflecting electrodes are electrically connected to the structure support layer.
The method according to claim 37 further comprising, before the forming of the structure support layer, forming a bonding layer on the overall structure where the barrier layer is formed.
A method of manufacturing a vertical GaN-based LED comprising: sequentially forming an n-type GaN-based semiconductor layer, an active layer, a p-type GaN-based semiconductor layer on a sapphire substrate; forming a plurality of barrier layers on the p-type GaN-based semiconductor layer, the plurality of barrier layers being spaced at a predetermined distance from each other; forming a reflecting electrode on the p-type GaN-based semiconductor layer including the barrier layer; forming a structure support layer on the reflecting electrode; removing the sapphire substrate through an LLO process; and forming an n-electrode on the n-type GaN-based semiconductor layer where the sapphire substrate is removed.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based LED (plated substrate type)
Materials described outside the worked examples.
GaN-based semiconductor
metal seed layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 2336-747 PA | — |
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