OF THE INVENTION

Francis J. Kub

Patent

Atlas literature

Patent

US 10,158,009

OF THE INVENTION

Francis J. Kub

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 2 dependent

1
Independent
Claims 1-3 Canceled
3
Independent
Canceled
4
Independentgraphenecollector materialdielectricgraphene base transistor with reduced collector area
A product of a process of making a graphene base transistor with reduced collector area comprising: forming a graphene material layer with a right and left lateral side portion over the top of a third region right and left side material; forming a collector material on a substrate; depositing a dielectric in the third region right and left side material; planarizing the dielectric in the third region right and left side material; cleaning and removing the native oxide on the top surface of the collector material; transferring a base graphene material layer to the top surface of the graphene material layer; bonding the base graphene material layer; and photostepping and deﬁning a second graphene material layer to the top surface of the graphene material layer. Currently amended
1. 5
  Dependent← claim 4graphenegraphene base transistor with reduced collector area
  The product of the process of making a graphene base transistor with reduced collector area of claim 4 wherein the graphene is doped and wherein said doping increases the graphene to semiconductor heterojunction barrier height and lowers the base resistance. Currently amended
7
Independent
Claims 7-9 Canceled
9
Independent
Canceled base transistor with reduced collector area of a material protection layer on the surface of the

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene base transistor with reduced collector area

dielectriclateral side dielectric

collector materialcollector/electron collection region

graphenebase graphene layer

emitter/electron_injection_regionemitter/electron injection region

Materials

Materials described outside the worked examples.

graphene

Base Layer

collector material

Collector

Process steps

Additional fabrication and treatment steps described in the patent.

Graphene Transfer And Bonding

Step 1

Process details

steps:forming graphene material layer with right and left lateral side portions over third region right and left side material, forming collector material on substrate, depositing dielectric in third region right and left side material, planarizing dielectric in third region right and left side material, cleaning and removing native oxide on top surface of collector material, transferring base graphene material layer to top surface of graphene material layer, bonding the base graphene material layer, photostepping and defining second graphene material layer to top surface of graphene material layer

Materials:graphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
—	4.38–4.9 eV	—
—

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