Patent
US 8,228,963OF THE INVENTION
Yohei ENYA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,228,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
FP₀ 9-0478- O₀ US-SE WHAT IS CLAIMED IS: Claim 1. A gallium nitride-based semiconductor optical device, comprising: a support base comprising a first gallium nitride-based semiconductor, a reference axis extending in a direction of one of an m- axis and an a-axis of the first gallium nitride-based semiconductor, a reference plane being orthogonal to the reference axis, the support base having a primary surface, the primary surface tilting with reference to the reference plane toward another of the in -axis and the a-axis of the 10 first gallium nitride-based semiconductor by a tilt angle in a range of 0.05 degree or more to less than 15 degrees; a first conductive type gallium nitride-based semiconductor region provided on the primary surface; a semiconductor epitaxial layer provided for an active layer on 15 the first conductive type gallium nitride-based semiconductor region, the semiconductor epitaxial layer comprising a second gallium nitride- based semiconductor, the second gallium nitride-based semiconductor including indium as a constituent element, an indium content of the semiconductor epitaxial layer being more than 0.1, an m -plane and an a- 20 plane of the second gallium nitride-based semiconductor tilting with reference to a normal axis, and the normal axis extending in a direction of a normal line of the primary surface.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising a barrier layer provided 25 on the first conductive type gallium nitride-based semiconductor region, the barrier layer comprising a third gallium nitride-based semiconductor, 37 rrU'-U'+/6-U JU₃-ob the semiconductor epitaxial layer being provided for a well layer of the active layer, the second gallium nitride-based semiconductor comprising InGaN, the third gallium nitride-based semiconductor comprising one of GaN and InGaN, and an m -plane and an a-plane of the third gallium 5 nitride-based semiconductor tilting with reference to the normal axis.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the tilt angle is 0.08 degree or more.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising: a second conductive type gallium nitride-based semiconductor 15 region provided on the active layer; a first electrode provided on the second conductive type gallium nitride-based semiconductor region; and a second electrode provided on a backside of the support base, the support base comprising a conductive GaN.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the active layer is provided to generate light having a wavelength in a range of 370 nanometers to 650 nanometers.
The gallium nitride-based semiconductor optical 10 device according to claim. 1, wherein the tilt angle is equal to or more than 0.1 degree, and the tilt angle is equal to or less than 1 degree.
The method according to claim 12, wherein the tilt angle is 0.08 degree or more.
rr7-U+/b-UUUy- Jj Claim 15. The method according to claim 12, wherein the tilt angle varies over the primary surface of the wafer.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor optical device
Materials described outside the worked examples.
gallium nitride-based semiconductor (support base/first GaN-based semiconductor)
GaN
indium-containing gallium nitride-based semiconductor (well layer/second GaN-based semiconductor)
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
indium content of semiconductor epitaxial layer (active layer well) | ≥ 0.1 mole fraction | InGaN |
primary surface tilt angle from reference plane (m-axis or a-axis direction) | 0.05–15 degree |
Patent
Atlas literature
Patent
US 8,228,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
FP₀ 9-0478- O₀ US-SE WHAT IS CLAIMED IS: Claim 1. A gallium nitride-based semiconductor optical device, comprising: a support base comprising a first gallium nitride-based semiconductor, a reference axis extending in a direction of one of an m- axis and an a-axis of the first gallium nitride-based semiconductor, a reference plane being orthogonal to the reference axis, the support base having a primary surface, the primary surface tilting with reference to the reference plane toward another of the in -axis and the a-axis of the 10 first gallium nitride-based semiconductor by a tilt angle in a range of 0.05 degree or more to less than 15 degrees; a first conductive type gallium nitride-based semiconductor region provided on the primary surface; a semiconductor epitaxial layer provided for an active layer on 15 the first conductive type gallium nitride-based semiconductor region, the semiconductor epitaxial layer comprising a second gallium nitride- based semiconductor, the second gallium nitride-based semiconductor including indium as a constituent element, an indium content of the semiconductor epitaxial layer being more than 0.1, an m -plane and an a- 20 plane of the second gallium nitride-based semiconductor tilting with reference to a normal axis, and the normal axis extending in a direction of a normal line of the primary surface.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising a barrier layer provided 25 on the first conductive type gallium nitride-based semiconductor region, the barrier layer comprising a third gallium nitride-based semiconductor, 37 rrU'-U'+/6-U JU₃-ob the semiconductor epitaxial layer being provided for a well layer of the active layer, the second gallium nitride-based semiconductor comprising InGaN, the third gallium nitride-based semiconductor comprising one of GaN and InGaN, and an m -plane and an a-plane of the third gallium 5 nitride-based semiconductor tilting with reference to the normal axis.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the tilt angle is 0.08 degree or more.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising: a second conductive type gallium nitride-based semiconductor 15 region provided on the active layer; a first electrode provided on the second conductive type gallium nitride-based semiconductor region; and a second electrode provided on a backside of the support base, the support base comprising a conductive GaN.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the active layer is provided to generate light having a wavelength in a range of 370 nanometers to 650 nanometers.
The gallium nitride-based semiconductor optical 10 device according to claim. 1, wherein the tilt angle is equal to or more than 0.1 degree, and the tilt angle is equal to or less than 1 degree.
The method according to claim 12, wherein the tilt angle is 0.08 degree or more.
rr7-U+/b-UUUy- Jj Claim 15. The method according to claim 12, wherein the tilt angle varies over the primary surface of the wafer.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor optical device
Materials described outside the worked examples.
gallium nitride-based semiconductor (support base/first GaN-based semiconductor)
GaN
indium-containing gallium nitride-based semiconductor (well layer/second GaN-based semiconductor)
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
indium content of semiconductor epitaxial layer (active layer well) | ≥ 0.1 mole fraction | InGaN |
primary surface tilt angle from reference plane (m-axis or a-axis direction) | 0.05–15 degree |
Patent
Atlas literature
Patent
US 8,228,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
FP₀ 9-0478- O₀ US-SE WHAT IS CLAIMED IS: Claim 1. A gallium nitride-based semiconductor optical device, comprising: a support base comprising a first gallium nitride-based semiconductor, a reference axis extending in a direction of one of an m- axis and an a-axis of the first gallium nitride-based semiconductor, a reference plane being orthogonal to the reference axis, the support base having a primary surface, the primary surface tilting with reference to the reference plane toward another of the in -axis and the a-axis of the 10 first gallium nitride-based semiconductor by a tilt angle in a range of 0.05 degree or more to less than 15 degrees; a first conductive type gallium nitride-based semiconductor region provided on the primary surface; a semiconductor epitaxial layer provided for an active layer on 15 the first conductive type gallium nitride-based semiconductor region, the semiconductor epitaxial layer comprising a second gallium nitride- based semiconductor, the second gallium nitride-based semiconductor including indium as a constituent element, an indium content of the semiconductor epitaxial layer being more than 0.1, an m -plane and an a- 20 plane of the second gallium nitride-based semiconductor tilting with reference to a normal axis, and the normal axis extending in a direction of a normal line of the primary surface.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising a barrier layer provided 25 on the first conductive type gallium nitride-based semiconductor region, the barrier layer comprising a third gallium nitride-based semiconductor, 37 rrU'-U'+/6-U JU₃-ob the semiconductor epitaxial layer being provided for a well layer of the active layer, the second gallium nitride-based semiconductor comprising InGaN, the third gallium nitride-based semiconductor comprising one of GaN and InGaN, and an m -plane and an a-plane of the third gallium 5 nitride-based semiconductor tilting with reference to the normal axis.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the tilt angle is 0.08 degree or more.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising: a second conductive type gallium nitride-based semiconductor 15 region provided on the active layer; a first electrode provided on the second conductive type gallium nitride-based semiconductor region; and a second electrode provided on a backside of the support base, the support base comprising a conductive GaN.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the active layer is provided to generate light having a wavelength in a range of 370 nanometers to 650 nanometers.
The gallium nitride-based semiconductor optical 10 device according to claim. 1, wherein the tilt angle is equal to or more than 0.1 degree, and the tilt angle is equal to or less than 1 degree.
The method according to claim 12, wherein the tilt angle is 0.08 degree or more.
rr7-U+/b-UUUy- Jj Claim 15. The method according to claim 12, wherein the tilt angle varies over the primary surface of the wafer.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor optical device
Materials described outside the worked examples.
gallium nitride-based semiconductor (support base/first GaN-based semiconductor)
GaN
indium-containing gallium nitride-based semiconductor (well layer/second GaN-based semiconductor)
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
indium content of semiconductor epitaxial layer (active layer well) | ≥ 0.1 mole fraction | InGaN |
primary surface tilt angle from reference plane (m-axis or a-axis direction) | 0.05–15 degree |
Patent
Atlas literature
Patent
US 8,228,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
FP₀ 9-0478- O₀ US-SE WHAT IS CLAIMED IS: Claim 1. A gallium nitride-based semiconductor optical device, comprising: a support base comprising a first gallium nitride-based semiconductor, a reference axis extending in a direction of one of an m- axis and an a-axis of the first gallium nitride-based semiconductor, a reference plane being orthogonal to the reference axis, the support base having a primary surface, the primary surface tilting with reference to the reference plane toward another of the in -axis and the a-axis of the 10 first gallium nitride-based semiconductor by a tilt angle in a range of 0.05 degree or more to less than 15 degrees; a first conductive type gallium nitride-based semiconductor region provided on the primary surface; a semiconductor epitaxial layer provided for an active layer on 15 the first conductive type gallium nitride-based semiconductor region, the semiconductor epitaxial layer comprising a second gallium nitride- based semiconductor, the second gallium nitride-based semiconductor including indium as a constituent element, an indium content of the semiconductor epitaxial layer being more than 0.1, an m -plane and an a- 20 plane of the second gallium nitride-based semiconductor tilting with reference to a normal axis, and the normal axis extending in a direction of a normal line of the primary surface.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising a barrier layer provided 25 on the first conductive type gallium nitride-based semiconductor region, the barrier layer comprising a third gallium nitride-based semiconductor, 37 rrU'-U'+/6-U JU₃-ob the semiconductor epitaxial layer being provided for a well layer of the active layer, the second gallium nitride-based semiconductor comprising InGaN, the third gallium nitride-based semiconductor comprising one of GaN and InGaN, and an m -plane and an a-plane of the third gallium 5 nitride-based semiconductor tilting with reference to the normal axis.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the tilt angle is 0.08 degree or more.
The gallium nitride-based semiconductor optical device according to claim 1, further comprising: a second conductive type gallium nitride-based semiconductor 15 region provided on the active layer; a first electrode provided on the second conductive type gallium nitride-based semiconductor region; and a second electrode provided on a backside of the support base, the support base comprising a conductive GaN.
The gallium nitride-based semiconductor optical device according to claim 1, wherein the active layer is provided to generate light having a wavelength in a range of 370 nanometers to 650 nanometers.
The gallium nitride-based semiconductor optical 10 device according to claim. 1, wherein the tilt angle is equal to or more than 0.1 degree, and the tilt angle is equal to or less than 1 degree.
The method according to claim 12, wherein the tilt angle is 0.08 degree or more.
rr7-U+/b-UUUy- Jj Claim 15. The method according to claim 12, wherein the tilt angle varies over the primary surface of the wafer.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor optical device
Materials described outside the worked examples.
gallium nitride-based semiconductor (support base/first GaN-based semiconductor)
GaN
indium-containing gallium nitride-based semiconductor (well layer/second GaN-based semiconductor)
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
indium content of semiconductor epitaxial layer (active layer well) | ≥ 0.1 mole fraction | InGaN |
primary surface tilt angle from reference plane (m-axis or a-axis direction) | 0.05–15 degree |
first conductive type gallium nitride-based semiconductor region
barrier layer gallium nitride-based semiconductor (third GaN-based semiconductor)
GaN |
active layer emission wavelength range | 370–650 nm | InGaN |
Thickness | 480–600 nm | — |
Temperature | 5–760 °C | — |
Temperature | 760–870 °C | — |
first conductive type gallium nitride-based semiconductor region
barrier layer gallium nitride-based semiconductor (third GaN-based semiconductor)
GaN |
active layer emission wavelength range | 370–650 nm | InGaN |
Thickness | 480–600 nm | — |
Temperature | 5–760 °C | — |
Temperature | 760–870 °C | — |
first conductive type gallium nitride-based semiconductor region
barrier layer gallium nitride-based semiconductor (third GaN-based semiconductor)
GaN |
active layer emission wavelength range | 370–650 nm | InGaN |
Thickness | 480–600 nm | — |
Temperature | 5–760 °C | — |
Temperature | 760–870 °C | — |
first conductive type gallium nitride-based semiconductor region
barrier layer gallium nitride-based semiconductor (third GaN-based semiconductor)
GaN |
active layer emission wavelength range | 370–650 nm | InGaN |
Thickness | 480–600 nm | — |
Temperature | 5–760 °C | — |
Temperature | 760–870 °C | — |