Patent
US 11,349,037of the Invention: COMPOUND SEMICONDUCTOR WAFER,
Akira NODA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,349,037Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view of a photoelectric conversion device 10 of the present embodiment. In the substrate and each layer, the upper surface …
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide wafer formed of a monocrystalline indium phosphide containing zin c as an impurity, comprising: a main surface of (100 plane) having a circular shape having a diameter of two inches or more; and a mean zin c concentration of 1.08 x 10 " cm- 3 or less and a mean dislocation density of 1000 cm⁻² or less, wherein a relative standard deviation of zin c concentrations determined at individual regions is 20% or less in a total 17 regions, each region having a 5 mm x 5 mm square shape on the main surface, and the 17 regions are defined such that a central point is located in a center of the (100) plane and points 5, 10, 15, and 20 mm away from the central point are arranged in four directions <01-1>, <0-11>, < 011 >, and <0- 1-1 >, wherein there are four points for each direction that are aligned with the centers of the 5 mm x 5 mm square shapes of the 17 regions, respectively, wherein each of the four directions extends from the central point such that i) the directions <01- 1 > and <0-1 1 > extend from the central point in an opposite direction each other, ii) the directions <011> and <0-1-1> extend from the central point in an opposite direction each other, and iii) each angle between two adjacent directions of the four directions is 9 0°. Currently amended
The indium phosphide wafer according to claim 1, wherein a CH/CL ratio of a z inc c o ncentrati on "C>" o f a regi o n cl oses t to the periphery of the main surface relative to a zinc concentration "C L" of a re gi on including the central point of the main surface is 1.8 or less when the wafer is cut out into the 17 regions. Previously presented
A photoelectric conversion device comprisin g: a p-type semiconductor substrate cut out from the indium phosphide wafer according to claim 1; an n-type semiconductor layer formed on a first main surface of the p-type semiconductor substrate; a first electrode formed on a surface of the n-type semiconductor layer; and a second electrode formed on a second main surface of the p-type semiconductor substrate. Withdrawn
The indium phosphide wafer according to claim 1, wherein the mean zin c concentration is 9.22 x 10 17 cm⁻³ or more and 1.08 x 10 18 cm⁻³ or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 17.8 % or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 11.8 % or less. Previously presented
Canceled
Canceled
A method for producing a monocrystalline indium phosphide containing zin c as an impurity, the method comprising: placing a raw material and an encapsulant in a heat-resistant pot; heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above; controlling the temperature in the pot such that the temperature of the upper portion of the encapsulant is as high as possible and below the temperature of the lower portion of the encapsulant; and dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal from the seed crystal in a cylindrical shape having a diameter of two inches or more and having a mean zin c concentration of 5 x 10 17 cm⁻³ or more and less than 1 x 10 18 cm -3 and a mean dislocation density of 5000 cm⁻² or less. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a "Rs/Rc" ratio of the rotational rate of the seed crystal "Rs" to the rotational rate of the pot "Rc" ranges from 1.10 to 1.33. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide wafer (100) plane
photoelectric conversion device
Materials described outside the worked examples.
indium phosphide (Zn-doped)
InP
liquid encapsulant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
mean_dislocation_density | ≤ 1000 cm⁻² | InP |
mean_zinc_concentration_upper_bound | ≤ 1080000000000000000 cm⁻³ |
Table 1
d the calculated relative standard deviations of the Zn concentrations for the individual ingots are shown in Table 1, and the Zn concentrations "C" of the individual chips slic
p. 12
Table 2
ips sliced out from the ingot according to Example 1 and the Zn concentration ratios "C H/C L " are shown in Table 2.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,349,037Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view of a photoelectric conversion device 10 of the present embodiment. In the substrate and each layer, the upper surface …
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide wafer formed of a monocrystalline indium phosphide containing zin c as an impurity, comprising: a main surface of (100 plane) having a circular shape having a diameter of two inches or more; and a mean zin c concentration of 1.08 x 10 " cm- 3 or less and a mean dislocation density of 1000 cm⁻² or less, wherein a relative standard deviation of zin c concentrations determined at individual regions is 20% or less in a total 17 regions, each region having a 5 mm x 5 mm square shape on the main surface, and the 17 regions are defined such that a central point is located in a center of the (100) plane and points 5, 10, 15, and 20 mm away from the central point are arranged in four directions <01-1>, <0-11>, < 011 >, and <0- 1-1 >, wherein there are four points for each direction that are aligned with the centers of the 5 mm x 5 mm square shapes of the 17 regions, respectively, wherein each of the four directions extends from the central point such that i) the directions <01- 1 > and <0-1 1 > extend from the central point in an opposite direction each other, ii) the directions <011> and <0-1-1> extend from the central point in an opposite direction each other, and iii) each angle between two adjacent directions of the four directions is 9 0°. Currently amended
The indium phosphide wafer according to claim 1, wherein a CH/CL ratio of a z inc c o ncentrati on "C>" o f a regi o n cl oses t to the periphery of the main surface relative to a zinc concentration "C L" of a re gi on including the central point of the main surface is 1.8 or less when the wafer is cut out into the 17 regions. Previously presented
A photoelectric conversion device comprisin g: a p-type semiconductor substrate cut out from the indium phosphide wafer according to claim 1; an n-type semiconductor layer formed on a first main surface of the p-type semiconductor substrate; a first electrode formed on a surface of the n-type semiconductor layer; and a second electrode formed on a second main surface of the p-type semiconductor substrate. Withdrawn
The indium phosphide wafer according to claim 1, wherein the mean zin c concentration is 9.22 x 10 17 cm⁻³ or more and 1.08 x 10 18 cm⁻³ or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 17.8 % or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 11.8 % or less. Previously presented
Canceled
Canceled
A method for producing a monocrystalline indium phosphide containing zin c as an impurity, the method comprising: placing a raw material and an encapsulant in a heat-resistant pot; heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above; controlling the temperature in the pot such that the temperature of the upper portion of the encapsulant is as high as possible and below the temperature of the lower portion of the encapsulant; and dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal from the seed crystal in a cylindrical shape having a diameter of two inches or more and having a mean zin c concentration of 5 x 10 17 cm⁻³ or more and less than 1 x 10 18 cm -3 and a mean dislocation density of 5000 cm⁻² or less. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a "Rs/Rc" ratio of the rotational rate of the seed crystal "Rs" to the rotational rate of the pot "Rc" ranges from 1.10 to 1.33. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide wafer (100) plane
photoelectric conversion device
Materials described outside the worked examples.
indium phosphide (Zn-doped)
InP
liquid encapsulant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
mean_dislocation_density | ≤ 1000 cm⁻² | InP |
mean_zinc_concentration_upper_bound | ≤ 1080000000000000000 cm⁻³ |
Table 1
d the calculated relative standard deviations of the Zn concentrations for the individual ingots are shown in Table 1, and the Zn concentrations "C" of the individual chips slic
p. 12
Table 2
ips sliced out from the ingot according to Example 1 and the Zn concentration ratios "C H/C L " are shown in Table 2.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,349,037Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view of a photoelectric conversion device 10 of the present embodiment. In the substrate and each layer, the upper surface …
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide wafer formed of a monocrystalline indium phosphide containing zin c as an impurity, comprising: a main surface of (100 plane) having a circular shape having a diameter of two inches or more; and a mean zin c concentration of 1.08 x 10 " cm- 3 or less and a mean dislocation density of 1000 cm⁻² or less, wherein a relative standard deviation of zin c concentrations determined at individual regions is 20% or less in a total 17 regions, each region having a 5 mm x 5 mm square shape on the main surface, and the 17 regions are defined such that a central point is located in a center of the (100) plane and points 5, 10, 15, and 20 mm away from the central point are arranged in four directions <01-1>, <0-11>, < 011 >, and <0- 1-1 >, wherein there are four points for each direction that are aligned with the centers of the 5 mm x 5 mm square shapes of the 17 regions, respectively, wherein each of the four directions extends from the central point such that i) the directions <01- 1 > and <0-1 1 > extend from the central point in an opposite direction each other, ii) the directions <011> and <0-1-1> extend from the central point in an opposite direction each other, and iii) each angle between two adjacent directions of the four directions is 9 0°. Currently amended
The indium phosphide wafer according to claim 1, wherein a CH/CL ratio of a z inc c o ncentrati on "C>" o f a regi o n cl oses t to the periphery of the main surface relative to a zinc concentration "C L" of a re gi on including the central point of the main surface is 1.8 or less when the wafer is cut out into the 17 regions. Previously presented
A photoelectric conversion device comprisin g: a p-type semiconductor substrate cut out from the indium phosphide wafer according to claim 1; an n-type semiconductor layer formed on a first main surface of the p-type semiconductor substrate; a first electrode formed on a surface of the n-type semiconductor layer; and a second electrode formed on a second main surface of the p-type semiconductor substrate. Withdrawn
The indium phosphide wafer according to claim 1, wherein the mean zin c concentration is 9.22 x 10 17 cm⁻³ or more and 1.08 x 10 18 cm⁻³ or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 17.8 % or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 11.8 % or less. Previously presented
Canceled
Canceled
A method for producing a monocrystalline indium phosphide containing zin c as an impurity, the method comprising: placing a raw material and an encapsulant in a heat-resistant pot; heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above; controlling the temperature in the pot such that the temperature of the upper portion of the encapsulant is as high as possible and below the temperature of the lower portion of the encapsulant; and dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal from the seed crystal in a cylindrical shape having a diameter of two inches or more and having a mean zin c concentration of 5 x 10 17 cm⁻³ or more and less than 1 x 10 18 cm -3 and a mean dislocation density of 5000 cm⁻² or less. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a "Rs/Rc" ratio of the rotational rate of the seed crystal "Rs" to the rotational rate of the pot "Rc" ranges from 1.10 to 1.33. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide wafer (100) plane
photoelectric conversion device
Materials described outside the worked examples.
indium phosphide (Zn-doped)
InP
liquid encapsulant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
mean_dislocation_density | ≤ 1000 cm⁻² | InP |
mean_zinc_concentration_upper_bound | ≤ 1080000000000000000 cm⁻³ |
Table 1
d the calculated relative standard deviations of the Zn concentrations for the individual ingots are shown in Table 1, and the Zn concentrations "C" of the individual chips slic
p. 12
Table 2
ips sliced out from the ingot according to Example 1 and the Zn concentration ratios "C H/C L " are shown in Table 2.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,349,037Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view of a photoelectric conversion device 10 of the present embodiment. In the substrate and each layer, the upper surface …
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide wafer formed of a monocrystalline indium phosphide containing zin c as an impurity, comprising: a main surface of (100 plane) having a circular shape having a diameter of two inches or more; and a mean zin c concentration of 1.08 x 10 " cm- 3 or less and a mean dislocation density of 1000 cm⁻² or less, wherein a relative standard deviation of zin c concentrations determined at individual regions is 20% or less in a total 17 regions, each region having a 5 mm x 5 mm square shape on the main surface, and the 17 regions are defined such that a central point is located in a center of the (100) plane and points 5, 10, 15, and 20 mm away from the central point are arranged in four directions <01-1>, <0-11>, < 011 >, and <0- 1-1 >, wherein there are four points for each direction that are aligned with the centers of the 5 mm x 5 mm square shapes of the 17 regions, respectively, wherein each of the four directions extends from the central point such that i) the directions <01- 1 > and <0-1 1 > extend from the central point in an opposite direction each other, ii) the directions <011> and <0-1-1> extend from the central point in an opposite direction each other, and iii) each angle between two adjacent directions of the four directions is 9 0°. Currently amended
The indium phosphide wafer according to claim 1, wherein a CH/CL ratio of a z inc c o ncentrati on "C>" o f a regi o n cl oses t to the periphery of the main surface relative to a zinc concentration "C L" of a re gi on including the central point of the main surface is 1.8 or less when the wafer is cut out into the 17 regions. Previously presented
A photoelectric conversion device comprisin g: a p-type semiconductor substrate cut out from the indium phosphide wafer according to claim 1; an n-type semiconductor layer formed on a first main surface of the p-type semiconductor substrate; a first electrode formed on a surface of the n-type semiconductor layer; and a second electrode formed on a second main surface of the p-type semiconductor substrate. Withdrawn
The indium phosphide wafer according to claim 1, wherein the mean zin c concentration is 9.22 x 10 17 cm⁻³ or more and 1.08 x 10 18 cm⁻³ or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 17.8 % or less. Previously presented
The indium phosphide wafer according to claim 1, wherein the relative standard deviation of zin c concentrations is 11.8 % or less. Previously presented
Canceled
Canceled
A method for producing a monocrystalline indium phosphide containing zin c as an impurity, the method comprising: placing a raw material and an encapsulant in a heat-resistant pot; heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above; controlling the temperature in the pot such that the temperature of the upper portion of the encapsulant is as high as possible and below the temperature of the lower portion of the encapsulant; and dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal from the seed crystal in a cylindrical shape having a diameter of two inches or more and having a mean zin c concentration of 5 x 10 17 cm⁻³ or more and less than 1 x 10 18 cm -3 and a mean dislocation density of 5000 cm⁻² or less. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a "Rs/Rc" ratio of the rotational rate of the seed crystal "Rs" to the rotational rate of the pot "Rc" ranges from 1.10 to 1.33. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal. Withdrawn
The method for producing a monocrystalline indium phosphide according to claim 6, wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide wafer (100) plane
photoelectric conversion device
Materials described outside the worked examples.
indium phosphide (Zn-doped)
InP
liquid encapsulant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates one exemplary method for measuring the dislocation density and zinc concentration in a compound semiconductor wafer. Embodiments for …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
mean_dislocation_density | ≤ 1000 cm⁻² | InP |
mean_zinc_concentration_upper_bound | ≤ 1080000000000000000 cm⁻³ |
Table 1
d the calculated relative standard deviations of the Zn concentrations for the individual ingots are shown in Table 1, and the Zn concentrations "C" of the individual chips slic
p. 12
Table 2
ips sliced out from the ingot according to Example 1 and the Zn concentration ratios "C H/C L " are shown in Table 2.
p. 12
Related documents with shared materials, methods, properties, or citations.
indium gallium arsenide (n-type layer)
GaInAs
gallium arsenide (GaAs)
GaAs
mean_zinc_concentration_range_claim_13 | 922000000000000000–1080000000000000000 cm⁻³ | InP |
relative_standard_deviation_zinc_concentration_17_regions | ≤ 20 % | InP |
relative_standard_deviation_zinc_concentration_claim_14 | ≤ 17.8 % | InP |
relative_standard_deviation_zinc_concentration_claim_15 | ≤ 11.8 % | InP |
CH_CL_ratio_periphery_to_center_claim_3 | ≤ 1.8 dimensionless | InP |
indium gallium arsenide (n-type layer)
GaInAs
gallium arsenide (GaAs)
GaAs
mean_zinc_concentration_range_claim_13 | 922000000000000000–1080000000000000000 cm⁻³ | InP |
relative_standard_deviation_zinc_concentration_17_regions | ≤ 20 % | InP |
relative_standard_deviation_zinc_concentration_claim_14 | ≤ 17.8 % | InP |
relative_standard_deviation_zinc_concentration_claim_15 | ≤ 11.8 % | InP |
CH_CL_ratio_periphery_to_center_claim_3 | ≤ 1.8 dimensionless | InP |
indium gallium arsenide (n-type layer)
GaInAs
gallium arsenide (GaAs)
GaAs
mean_zinc_concentration_range_claim_13 | 922000000000000000–1080000000000000000 cm⁻³ | InP |
relative_standard_deviation_zinc_concentration_17_regions | ≤ 20 % | InP |
relative_standard_deviation_zinc_concentration_claim_14 | ≤ 17.8 % | InP |
relative_standard_deviation_zinc_concentration_claim_15 | ≤ 11.8 % | InP |
CH_CL_ratio_periphery_to_center_claim_3 | ≤ 1.8 dimensionless | InP |
indium gallium arsenide (n-type layer)
GaInAs
gallium arsenide (GaAs)
GaAs
mean_zinc_concentration_range_claim_13 | 922000000000000000–1080000000000000000 cm⁻³ | InP |
relative_standard_deviation_zinc_concentration_17_regions | ≤ 20 % | InP |
relative_standard_deviation_zinc_concentration_claim_14 | ≤ 17.8 % | InP |
relative_standard_deviation_zinc_concentration_claim_15 | ≤ 11.8 % | InP |
CH_CL_ratio_periphery_to_center_claim_3 | ≤ 1.8 dimensionless | InP |