Patent
US 9,680,052OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTANCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF
Andreas Löffler
US
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Patent
US 9,680,052Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure; and a spacer layer arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The optoelectronic component according to claim 16, wherein the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another.
The optoelectronic component according to claim 16, wherein the first partial layer has a degree of doping less than 5 x 10 ^ 18 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the second partial layer has a degree of doping of 1 x 10 ^ 18 per cubic centimeter to 1.5 x 10^ 20 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the first partial layer and the second partial layer each have a thickness of 1 nm to 50 nm. EAST\140338099.1 2
The optoelectronic component according to claim 16, wherein the p-doped layer comprises 1 to 50 first partial layers.
The optoelectronic component according to claim 16, wherein two second partial layers have different degrees of doping.
The optoelectronic component according to claim 16, wherein the spacer layer comprises a first partial spacer layer having a lower degree of doping and a second partial spacer layer having a higher degree of doping, and the first partial spacer layer is arranged nearer to the quantum film structure than the second partial spacer layer.
The optoelectronic component according to claim 16, wherein the p-doped layer is doped with magnesium, carbon or boron.
The optoelectronic component according to claim 16, wherein the p-doped layer has an indium proportion of less than 30%, and the p-doped layer has an aluminum proportion of less than 30%.
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The optoelectronic component according to claim 23, wherein the spacer layer has a thickness of 2 nm to 120 nm.
A method of producing an optoelectronic component comprising: providing a substrate; growing a quantum film structure; [[and]] growing a p-doped layer [[,]]; and EAST\14033 8099.1 3 growing a space layer between the quantum film structure and the p-doped layer, wherein growing the p-doped layer comprises growing at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer, and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The method according to claim 28, wherein a plurality of first partial layers and second partial layers are grown alternately.
The method according to claim 28, wherein a spacer layer is grown between the quantum film structure and the p-doped layer.
An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure[[,]]; and a spacer laver arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, the second partial layer has a higher degree of doping than the first partial layer, EAST\l40338099.1 4 a degree of doping in a growth direction of the semiconductor laver structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer, the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another, the p-doped layer and the p-doped layer has an aluminum proportion
The optoelectroni c component according to indium and free of aluminum. EAST\140338099.1 has an indium proportion of less than 30%, of less than 30%. claim 31, wherein the p-doped layer is free of
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic component (GaN-based)
Materials described outside the worked examples.
quantum film structure
p-doped layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–50 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,680,052Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure; and a spacer layer arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The optoelectronic component according to claim 16, wherein the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another.
The optoelectronic component according to claim 16, wherein the first partial layer has a degree of doping less than 5 x 10 ^ 18 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the second partial layer has a degree of doping of 1 x 10 ^ 18 per cubic centimeter to 1.5 x 10^ 20 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the first partial layer and the second partial layer each have a thickness of 1 nm to 50 nm. EAST\140338099.1 2
The optoelectronic component according to claim 16, wherein the p-doped layer comprises 1 to 50 first partial layers.
The optoelectronic component according to claim 16, wherein two second partial layers have different degrees of doping.
The optoelectronic component according to claim 16, wherein the spacer layer comprises a first partial spacer layer having a lower degree of doping and a second partial spacer layer having a higher degree of doping, and the first partial spacer layer is arranged nearer to the quantum film structure than the second partial spacer layer.
The optoelectronic component according to claim 16, wherein the p-doped layer is doped with magnesium, carbon or boron.
The optoelectronic component according to claim 16, wherein the p-doped layer has an indium proportion of less than 30%, and the p-doped layer has an aluminum proportion of less than 30%.
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The optoelectronic component according to claim 23, wherein the spacer layer has a thickness of 2 nm to 120 nm.
A method of producing an optoelectronic component comprising: providing a substrate; growing a quantum film structure; [[and]] growing a p-doped layer [[,]]; and EAST\14033 8099.1 3 growing a space layer between the quantum film structure and the p-doped layer, wherein growing the p-doped layer comprises growing at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer, and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The method according to claim 28, wherein a plurality of first partial layers and second partial layers are grown alternately.
The method according to claim 28, wherein a spacer layer is grown between the quantum film structure and the p-doped layer.
An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure[[,]]; and a spacer laver arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, the second partial layer has a higher degree of doping than the first partial layer, EAST\l40338099.1 4 a degree of doping in a growth direction of the semiconductor laver structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer, the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another, the p-doped layer and the p-doped layer has an aluminum proportion
The optoelectroni c component according to indium and free of aluminum. EAST\140338099.1 has an indium proportion of less than 30%, of less than 30%. claim 31, wherein the p-doped layer is free of
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic component (GaN-based)
Materials described outside the worked examples.
quantum film structure
p-doped layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–50 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,680,052Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure; and a spacer layer arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The optoelectronic component according to claim 16, wherein the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another.
The optoelectronic component according to claim 16, wherein the first partial layer has a degree of doping less than 5 x 10 ^ 18 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the second partial layer has a degree of doping of 1 x 10 ^ 18 per cubic centimeter to 1.5 x 10^ 20 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the first partial layer and the second partial layer each have a thickness of 1 nm to 50 nm. EAST\140338099.1 2
The optoelectronic component according to claim 16, wherein the p-doped layer comprises 1 to 50 first partial layers.
The optoelectronic component according to claim 16, wherein two second partial layers have different degrees of doping.
The optoelectronic component according to claim 16, wherein the spacer layer comprises a first partial spacer layer having a lower degree of doping and a second partial spacer layer having a higher degree of doping, and the first partial spacer layer is arranged nearer to the quantum film structure than the second partial spacer layer.
The optoelectronic component according to claim 16, wherein the p-doped layer is doped with magnesium, carbon or boron.
The optoelectronic component according to claim 16, wherein the p-doped layer has an indium proportion of less than 30%, and the p-doped layer has an aluminum proportion of less than 30%.
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The optoelectronic component according to claim 23, wherein the spacer layer has a thickness of 2 nm to 120 nm.
A method of producing an optoelectronic component comprising: providing a substrate; growing a quantum film structure; [[and]] growing a p-doped layer [[,]]; and EAST\14033 8099.1 3 growing a space layer between the quantum film structure and the p-doped layer, wherein growing the p-doped layer comprises growing at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer, and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The method according to claim 28, wherein a plurality of first partial layers and second partial layers are grown alternately.
The method according to claim 28, wherein a spacer layer is grown between the quantum film structure and the p-doped layer.
An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure[[,]]; and a spacer laver arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, the second partial layer has a higher degree of doping than the first partial layer, EAST\l40338099.1 4 a degree of doping in a growth direction of the semiconductor laver structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer, the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another, the p-doped layer and the p-doped layer has an aluminum proportion
The optoelectroni c component according to indium and free of aluminum. EAST\140338099.1 has an indium proportion of less than 30%, of less than 30%. claim 31, wherein the p-doped layer is free of
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic component (GaN-based)
Materials described outside the worked examples.
quantum film structure
p-doped layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–50 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,680,052Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 15. canceled
canceled
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An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure; and a spacer layer arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The optoelectronic component according to claim 16, wherein the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another.
The optoelectronic component according to claim 16, wherein the first partial layer has a degree of doping less than 5 x 10 ^ 18 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the second partial layer has a degree of doping of 1 x 10 ^ 18 per cubic centimeter to 1.5 x 10^ 20 per cubic centimeter.
The optoelectronic component according to claim 16, wherein the first partial layer and the second partial layer each have a thickness of 1 nm to 50 nm. EAST\140338099.1 2
The optoelectronic component according to claim 16, wherein the p-doped layer comprises 1 to 50 first partial layers.
The optoelectronic component according to claim 16, wherein two second partial layers have different degrees of doping.
The optoelectronic component according to claim 16, wherein the spacer layer comprises a first partial spacer layer having a lower degree of doping and a second partial spacer layer having a higher degree of doping, and the first partial spacer layer is arranged nearer to the quantum film structure than the second partial spacer layer.
The optoelectronic component according to claim 16, wherein the p-doped layer is doped with magnesium, carbon or boron.
The optoelectronic component according to claim 16, wherein the p-doped layer has an indium proportion of less than 30%, and the p-doped layer has an aluminum proportion of less than 30%.
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The optoelectronic component according to claim 23, wherein the spacer layer has a thickness of 2 nm to 120 nm.
A method of producing an optoelectronic component comprising: providing a substrate; growing a quantum film structure; [[and]] growing a p-doped layer [[,]]; and EAST\14033 8099.1 3 growing a space layer between the quantum film structure and the p-doped layer, wherein growing the p-doped layer comprises growing at least one first partial layer and a second partial layer, [[and]] the second partial layer has a higher degree of doping than the first partial layer, and a degree of doping in a growth direction of the semiconductor layer structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer.
The method according to claim 28, wherein a plurality of first partial layers and second partial layers are grown alternately.
The method according to claim 28, wherein a spacer layer is grown between the quantum film structure and the p-doped layer.
An optoelectronic component comprising: a semiconductor layer structure having a quantum film structure; [[and]] a p-doped layer arranged above the quantum film structure[[,]]; and a spacer laver arranged between the quantum film structure and the p-doped layer, wherein the p-doped layer comprises at least one first partial layer and a second partial layer, the second partial layer has a higher degree of doping than the first partial layer, EAST\l40338099.1 4 a degree of doping in a growth direction of the semiconductor laver structure in the spacer layer is increased between a doping level of the quantum film structure and a doping level of the p-doped layer, the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another, the p-doped layer and the p-doped layer has an aluminum proportion
The optoelectroni c component according to indium and free of aluminum. EAST\140338099.1 has an indium proportion of less than 30%, of less than 30%. claim 31, wherein the p-doped layer is free of
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic component (GaN-based)
Materials described outside the worked examples.
quantum film structure
p-doped layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–50 nm | — |
Thickness |
spacer layer
p-type dopant (magnesium, carbon or boron)
| — |
spacer layer
p-type dopant (magnesium, carbon or boron)
| — |
spacer layer
p-type dopant (magnesium, carbon or boron)
| — |
spacer layer
p-type dopant (magnesium, carbon or boron)
| — |