A printed circuit board substrate comprising: a polymer matrix, wherein the polymer matrix comprises at least one of an epoxy, a polyphenylene ether, a polystyrene, an ethylene-propylene dicyclopentadiene copolymer, a polybutadiene, a polyisoprene, a fluo-ropolymer, or a crosslinked matrix comprising at least one of triallyl cyanurate, triallyl isocyanurate, 1,2,4-trivinyl cyclohexane, trimethylolpropane triacrylate, or trimethylolpropane trimethacrylate; a reinforcing layer; and 10 to 50 volume percent, based on the total volume of the printed circuit board substrate, of a plurality of coated boron nitride particles having an average particle size of 5 to 500 micrometers; wherein the plurality of coated boron nitride particles comprises a coating comprising aluminum oxide, wherein the coating has an average coating thickness of 0.5 to 10 nanometers, wherein the plurality of coated boron nitride particles further comprises a surface treatment; wherein the printed circuit board substrate has a peel strength of greater than or equl to 3 pli as determined in accordance with IPC-Tm-650-2,4,8; and wherein the printed circuit board has a Z-direction ther-mal conductivity that is at least 90% that of an equiva-lent printed circuit board comprising boron nitride particles without the coating comprising aluminum oxide.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles has an average particle size of 10 to 250 micrometers.
The printed circuit board substrate of claim 1, wherein the coating is disposed over 10 to 100 A % of the total surface area of the plurality of the boron nitride particles.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles comprises less than 1 wt % of the coating based on the total weight of the plurality of coated boron nitride particles.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 10 to 25 vol % of the plurality of coated boron nitride particles based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 15 to 99 vol % of the thermoset polymer matrix based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the polymer matrix comprises at least one of a butadiene homopolymer, an isoprene homopolymer, a butadiene-vi-nylaromatic copolymer, or an isoprene- vinylaromatic copo-lymer.
The printed circuit board substrate of claim 1, com-prising, based on the total volume of the printed circuit board substrate: 15 to 50 volume percent of the polymer matrix; 10 to 25 volume percent of the plurality of coated boron nitride particles; 20 to 50 volume percent of a secondary inorganic filler comprising a secondary inorganic dielectric filler, and a flame retardant filler; and the reinforcing layer.
15
Dependent← claim 1BNpolymer matrixprinted circuit board substratecircuit material
A circuit material comprising the printed circuit board substrate of claim 1 and a conductive layer disposed on at least one surface of the printed circuit board substrate.
A method of making the printed circuit board substrate of claim 1, comprising forming a mixture comprising a thermosetting composi-tion and the plurality of the coated boron nitride particles; coating a reinforcing layer with the mixture; and curing the thermosetting composition to form the printed circuit board substrate.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
printed circuit board substrate
glass fibersreinforcing layer
BNthermally conductive filler
polymer matrixmatrix
circuit material
conductivelayerconductive layer
substratesubstrate
Materials
Materials described outside the worked examples.
coated boron nitride particles
BN
Thermally Conductive Filler
polymer matrix
Matrix
aluminum oxide coating
Process steps
Additional fabrication and treatment steps described in the patent.
1
Atomic Layer Deposition
Step 1
Process details
substrate:boron nitride particles
coating material:aluminum oxide
temperature c max:10
temperature c min:0.5
coating thickness nm:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
peel strength of printed circuit board substrate (IPC-TM-650-2.4.8)
≥3 pli
BNpolymer matrix
Z-direction thermal conductivity retention vs. uncoated BN baseline
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 39
US 3,956,041 A3,956,041 A * 5/1976 Polichette............... B29C 63/48examiner
US 4,289,720 A4,289,720 A 9/1981 Yajima et al.
JP 2014055303 AJP 2014055303 A 3/2014
JP 5988164 B2JP 5988164 B2 9/2016
US 4,321,100 A4,321,100 A 3/1982 Dubuske
US 5,153,295 A5,153,295 A 10/1992 Whitmarsh et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A printed circuit board substrate comprising: a polymer matrix, wherein the polymer matrix comprises at least one of an epoxy, a polyphenylene ether, a polystyrene, an ethylene-propylene dicyclopentadiene copolymer, a polybutadiene, a polyisoprene, a fluo-ropolymer, or a crosslinked matrix comprising at least one of triallyl cyanurate, triallyl isocyanurate, 1,2,4-trivinyl cyclohexane, trimethylolpropane triacrylate, or trimethylolpropane trimethacrylate; a reinforcing layer; and 10 to 50 volume percent, based on the total volume of the printed circuit board substrate, of a plurality of coated boron nitride particles having an average particle size of 5 to 500 micrometers; wherein the plurality of coated boron nitride particles comprises a coating comprising aluminum oxide, wherein the coating has an average coating thickness of 0.5 to 10 nanometers, wherein the plurality of coated boron nitride particles further comprises a surface treatment; wherein the printed circuit board substrate has a peel strength of greater than or equl to 3 pli as determined in accordance with IPC-Tm-650-2,4,8; and wherein the printed circuit board has a Z-direction ther-mal conductivity that is at least 90% that of an equiva-lent printed circuit board comprising boron nitride particles without the coating comprising aluminum oxide.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles has an average particle size of 10 to 250 micrometers.
The printed circuit board substrate of claim 1, wherein the coating is disposed over 10 to 100 A % of the total surface area of the plurality of the boron nitride particles.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles comprises less than 1 wt % of the coating based on the total weight of the plurality of coated boron nitride particles.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 10 to 25 vol % of the plurality of coated boron nitride particles based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 15 to 99 vol % of the thermoset polymer matrix based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the polymer matrix comprises at least one of a butadiene homopolymer, an isoprene homopolymer, a butadiene-vi-nylaromatic copolymer, or an isoprene- vinylaromatic copo-lymer.
The printed circuit board substrate of claim 1, com-prising, based on the total volume of the printed circuit board substrate: 15 to 50 volume percent of the polymer matrix; 10 to 25 volume percent of the plurality of coated boron nitride particles; 20 to 50 volume percent of a secondary inorganic filler comprising a secondary inorganic dielectric filler, and a flame retardant filler; and the reinforcing layer.
15
Dependent← claim 1BNpolymer matrixprinted circuit board substratecircuit material
A circuit material comprising the printed circuit board substrate of claim 1 and a conductive layer disposed on at least one surface of the printed circuit board substrate.
A method of making the printed circuit board substrate of claim 1, comprising forming a mixture comprising a thermosetting composi-tion and the plurality of the coated boron nitride particles; coating a reinforcing layer with the mixture; and curing the thermosetting composition to form the printed circuit board substrate.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
printed circuit board substrate
glass fibersreinforcing layer
BNthermally conductive filler
polymer matrixmatrix
circuit material
conductivelayerconductive layer
substratesubstrate
Materials
Materials described outside the worked examples.
coated boron nitride particles
BN
Thermally Conductive Filler
polymer matrix
Matrix
aluminum oxide coating
Process steps
Additional fabrication and treatment steps described in the patent.
1
Atomic Layer Deposition
Step 1
Process details
substrate:boron nitride particles
coating material:aluminum oxide
temperature c max:10
temperature c min:0.5
coating thickness nm:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
peel strength of printed circuit board substrate (IPC-TM-650-2.4.8)
≥3 pli
BNpolymer matrix
Z-direction thermal conductivity retention vs. uncoated BN baseline
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 39
US 3,956,041 A3,956,041 A * 5/1976 Polichette............... B29C 63/48examiner
US 4,289,720 A4,289,720 A 9/1981 Yajima et al.
JP 2014055303 AJP 2014055303 A 3/2014
JP 5988164 B2JP 5988164 B2 9/2016
US 4,321,100 A4,321,100 A 3/1982 Dubuske
US 5,153,295 A5,153,295 A 10/1992 Whitmarsh et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A printed circuit board substrate comprising: a polymer matrix, wherein the polymer matrix comprises at least one of an epoxy, a polyphenylene ether, a polystyrene, an ethylene-propylene dicyclopentadiene copolymer, a polybutadiene, a polyisoprene, a fluo-ropolymer, or a crosslinked matrix comprising at least one of triallyl cyanurate, triallyl isocyanurate, 1,2,4-trivinyl cyclohexane, trimethylolpropane triacrylate, or trimethylolpropane trimethacrylate; a reinforcing layer; and 10 to 50 volume percent, based on the total volume of the printed circuit board substrate, of a plurality of coated boron nitride particles having an average particle size of 5 to 500 micrometers; wherein the plurality of coated boron nitride particles comprises a coating comprising aluminum oxide, wherein the coating has an average coating thickness of 0.5 to 10 nanometers, wherein the plurality of coated boron nitride particles further comprises a surface treatment; wherein the printed circuit board substrate has a peel strength of greater than or equl to 3 pli as determined in accordance with IPC-Tm-650-2,4,8; and wherein the printed circuit board has a Z-direction ther-mal conductivity that is at least 90% that of an equiva-lent printed circuit board comprising boron nitride particles without the coating comprising aluminum oxide.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles has an average particle size of 10 to 250 micrometers.
The printed circuit board substrate of claim 1, wherein the coating is disposed over 10 to 100 A % of the total surface area of the plurality of the boron nitride particles.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles comprises less than 1 wt % of the coating based on the total weight of the plurality of coated boron nitride particles.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 10 to 25 vol % of the plurality of coated boron nitride particles based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 15 to 99 vol % of the thermoset polymer matrix based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the polymer matrix comprises at least one of a butadiene homopolymer, an isoprene homopolymer, a butadiene-vi-nylaromatic copolymer, or an isoprene- vinylaromatic copo-lymer.
The printed circuit board substrate of claim 1, com-prising, based on the total volume of the printed circuit board substrate: 15 to 50 volume percent of the polymer matrix; 10 to 25 volume percent of the plurality of coated boron nitride particles; 20 to 50 volume percent of a secondary inorganic filler comprising a secondary inorganic dielectric filler, and a flame retardant filler; and the reinforcing layer.
15
Dependent← claim 1BNpolymer matrixprinted circuit board substratecircuit material
A circuit material comprising the printed circuit board substrate of claim 1 and a conductive layer disposed on at least one surface of the printed circuit board substrate.
A method of making the printed circuit board substrate of claim 1, comprising forming a mixture comprising a thermosetting composi-tion and the plurality of the coated boron nitride particles; coating a reinforcing layer with the mixture; and curing the thermosetting composition to form the printed circuit board substrate.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
printed circuit board substrate
glass fibersreinforcing layer
BNthermally conductive filler
polymer matrixmatrix
circuit material
conductivelayerconductive layer
substratesubstrate
Materials
Materials described outside the worked examples.
coated boron nitride particles
BN
Thermally Conductive Filler
polymer matrix
Matrix
aluminum oxide coating
Process steps
Additional fabrication and treatment steps described in the patent.
1
Atomic Layer Deposition
Step 1
Process details
substrate:boron nitride particles
coating material:aluminum oxide
temperature c max:10
temperature c min:0.5
coating thickness nm:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
peel strength of printed circuit board substrate (IPC-TM-650-2.4.8)
≥3 pli
BNpolymer matrix
Z-direction thermal conductivity retention vs. uncoated BN baseline
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 39
US 3,956,041 A3,956,041 A * 5/1976 Polichette............... B29C 63/48examiner
US 4,289,720 A4,289,720 A 9/1981 Yajima et al.
JP 2014055303 AJP 2014055303 A 3/2014
JP 5988164 B2JP 5988164 B2 9/2016
US 4,321,100 A4,321,100 A 3/1982 Dubuske
US 5,153,295 A5,153,295 A 10/1992 Whitmarsh et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
A printed circuit board substrate comprising: a polymer matrix, wherein the polymer matrix comprises at least one of an epoxy, a polyphenylene ether, a polystyrene, an ethylene-propylene dicyclopentadiene copolymer, a polybutadiene, a polyisoprene, a fluo-ropolymer, or a crosslinked matrix comprising at least one of triallyl cyanurate, triallyl isocyanurate, 1,2,4-trivinyl cyclohexane, trimethylolpropane triacrylate, or trimethylolpropane trimethacrylate; a reinforcing layer; and 10 to 50 volume percent, based on the total volume of the printed circuit board substrate, of a plurality of coated boron nitride particles having an average particle size of 5 to 500 micrometers; wherein the plurality of coated boron nitride particles comprises a coating comprising aluminum oxide, wherein the coating has an average coating thickness of 0.5 to 10 nanometers, wherein the plurality of coated boron nitride particles further comprises a surface treatment; wherein the printed circuit board substrate has a peel strength of greater than or equl to 3 pli as determined in accordance with IPC-Tm-650-2,4,8; and wherein the printed circuit board has a Z-direction ther-mal conductivity that is at least 90% that of an equiva-lent printed circuit board comprising boron nitride particles without the coating comprising aluminum oxide.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles has an average particle size of 10 to 250 micrometers.
The printed circuit board substrate of claim 1, wherein the coating is disposed over 10 to 100 A % of the total surface area of the plurality of the boron nitride particles.
The printed circuit board substrate of claim 1, wherein the plurality of coated boron nitride particles comprises less than 1 wt % of the coating based on the total weight of the plurality of coated boron nitride particles.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 10 to 25 vol % of the plurality of coated boron nitride particles based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the printed circuit board substrate comprises 15 to 99 vol % of the thermoset polymer matrix based on the total volume of the printed circuit board substrate.
The printed circuit board substrate of claim 1, wherein the polymer matrix comprises at least one of a butadiene homopolymer, an isoprene homopolymer, a butadiene-vi-nylaromatic copolymer, or an isoprene- vinylaromatic copo-lymer.
The printed circuit board substrate of claim 1, com-prising, based on the total volume of the printed circuit board substrate: 15 to 50 volume percent of the polymer matrix; 10 to 25 volume percent of the plurality of coated boron nitride particles; 20 to 50 volume percent of a secondary inorganic filler comprising a secondary inorganic dielectric filler, and a flame retardant filler; and the reinforcing layer.
15
Dependent← claim 1BNpolymer matrixprinted circuit board substratecircuit material
A circuit material comprising the printed circuit board substrate of claim 1 and a conductive layer disposed on at least one surface of the printed circuit board substrate.
A method of making the printed circuit board substrate of claim 1, comprising forming a mixture comprising a thermosetting composi-tion and the plurality of the coated boron nitride particles; coating a reinforcing layer with the mixture; and curing the thermosetting composition to form the printed circuit board substrate.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
printed circuit board substrate
glass fibersreinforcing layer
BNthermally conductive filler
polymer matrixmatrix
circuit material
conductivelayerconductive layer
substratesubstrate
Materials
Materials described outside the worked examples.
coated boron nitride particles
BN
Thermally Conductive Filler
polymer matrix
Matrix
aluminum oxide coating
Process steps
Additional fabrication and treatment steps described in the patent.
1
Atomic Layer Deposition
Step 1
Process details
substrate:boron nitride particles
coating material:aluminum oxide
temperature c max:10
temperature c min:0.5
coating thickness nm:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
peel strength of printed circuit board substrate (IPC-TM-650-2.4.8)
≥3 pli
BNpolymer matrix
Z-direction thermal conductivity retention vs. uncoated BN baseline
Cited prior art
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 39
US 3,956,041 A3,956,041 A * 5/1976 Polichette............... B29C 63/48examiner
US 4,289,720 A4,289,720 A 9/1981 Yajima et al.
JP 2014055303 AJP 2014055303 A 3/2014
JP 5988164 B2JP 5988164 B2 9/2016
US 4,321,100 A4,321,100 A 3/1982 Dubuske
US 5,153,295 A5,153,295 A 10/1992 Whitmarsh et al.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Coating Deposited By AldThermally Conductive Filler Or Coating
silicon dioxide
SiO₂
Coating Component Or Dielectric Filler
Coating Component
glass fibers
Reinforcing Layer
secondary inorganic filler (dielectric and flame retardant)
Secondary Filler
0.5 to 10
Materials:BNAl₂O₃
2
Composite Fabrication
Step 2
Process details
steps:forming mixture of thermosetting composition and coated BN particles, coating reinforcing layer with mixture, curing thermosetting composition
partial cure option:pre-preg
optional roll to roll:true
Materials:BNpolymer matrixglass fibers
≥90 %
BN
Z-direction thermal conductivity (ASTM D5470-17, TIM Tester 1300)
≥ 0.8 W/mK
BNpolymer matrix
Water absorption (ASTM D570-98(2018))
≤0.15 wt%
polymer matrix
Intrinsic thermal conductivity of hexagonal boron nitride particles
10–300 W/mK
BN
Thickness
0.5–100 nm
—
Thickness
1–100 nm
—
Thickness
0.1–1000 µm
—
Thickness
5–500 µm
—
Thickness
25–150 µm
—
Thickness
0.5–30 nm
—
Thickness
1–20 nm
—
Thickness
500–100000 nm
—
Thickness
10–250 µm
—
Thickness
3–40 µm
—
Thickness
0.1–100 nm
—
Thickness
1–10 nm
—
Temperature
150–200 °C
—
Duration
6–10 hours
—
Temperature
500–1500 °C
—
Duration
4–18 hours
—
Thickness
400–500 µm
—
Thickness
30–40 µm
—
Pressure
1–90 pa
—
Thickness
3–200 µm
—
Thickness
9–180 µm
—
Temperature
150–390 °C
—
Pressure
2–20 pa
—
Thickness
≤ 1 µm
—
Duration
≥ 4 hours
—
Thickness
0.5–10 nm
—
US 5,571,609 A
5,571,609 A 11/1996 St. Lawrence et al.
US 5,898,009 A5,898,009 A 4/1999 Shaffer et al.
US 5,972,811 A5,972,811 A 10/1999 St. Lawrence et al.
US 6,048,511 A6,048,511 A 4/2000 Shaffer et al.
US 6,071,836 A6,071,836 A 6/2000 St. Lawrence et al.
US 6,147,243 A6,147,243 A 11/2000 Onodera et al.
US 6,291,374 B16,291,374 B1 9/2001 Landi
US 6,312,621 B16,312,621 B1 11/2001 Pedigo et al.
US 6,322,621 B16,322,621 B1 11/2001 Pedigo et al.
US 6,586,533 B16,586,533 B1 7/2003 Landi et al.
US 6,613,383 B16,613,383 B1 9/2003 George et al.
US 6,713,177 B26,713,177 B2 3/2004 George et al.
US 6,913,827 B26,913,827 B2 7/2005 George et al.
US 6,951,583 B26,951,583 B2 10/2005 Clere et al.
US 8,875,813 B28,875,813 B2 11/2014 Zhan et al.
US 9,546,424 B29,546,424 B2 1/2017 King et al.
US 2002/0123285 A12002/0123285 A1 9/2002 Dana et al.
US 2003/0026989 A12003/0026989 A1 2/2003 George et al.
US 2005/0041373 A12005/0041373 A1 2/2005 Pruss et al.
US 2007/0093587 A12007/0093587 A1 4/2007 Shen et al.
US 2016/0276072 A12016/0276072 A1 9/2016 Sethumadhavan et al.
US 2017/0022600 A12017/0022600 A1 1/2017 King et al.
US 2017/0022608 A12017/0022608 A1 1/2017 King et al.
US 2017/0055339 A12017/0055339 A1 * 2/2017 Zhang.................. H05K 1/0373examiner
US 2017/0145266 A12017/0145266 A1 5/2017 Scholz
JP 2017128662 AJP 2017128662 A 7/2017
KR 20180007551 AKR 20180007551 A 1/2018
WO 03008186 A1WO 03008186 A1 1/2003
WO 2008036657 A1WO 2008036657 A1 3/2008
WO 2008036662 A2WO 2008036662 A2 3/2008
WO 2008130894 A1WO 2008130894 A1 10/2008
WO 2010141432 A1WO 2010141432 A1 12/2010
WO 2018093987 A1WO 2018093987 A1 5/2018
Cited non-patent literature · 8
Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions. Ferguson et al.’s “Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions,” Chem. Mater. 2000, 12, 3472-3480 (Year: 2000).
Growth mode of alumina atomic layer deposition on nanopowders. “Growth mode of alumina atomic layer deposition on nanopowders,”
Manandhar et al., Journal of Vacuum Science & Technology A 35, 041503 (2017) (Year: 2017).
Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions. Ferguson et al., “Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions,” Aug. 1, 2000, Applied surface Science vol. 162-163, pp. 280-292.
Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles. Ferguson et al., “Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles,” 2000, This Solid Films, 371, pp. 95-104.
Thermally Conductive Dieletrics without Halogens or Phosphorous. Hill et al., “Thermally Conductive Dieletrics without Halogens or Phosphorous,” (2006), OnBoard Technology, pp. 8-11. International Search Report; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019;dated Jan. 24, 2020; 6 pages.
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Liu et al., “The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition,” 2012, Appl. Phys. Lett. 100, 152115. pp. 1-4.
Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD. Wank et al., “Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD,” (2004) Powder Technology, vol. 142, pp. 59-69. Written Opinion; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019; dated Jan. 24, 2020; 7 pages.
Coating Deposited By AldThermally Conductive Filler Or Coating
silicon dioxide
SiO₂
Coating Component Or Dielectric Filler
Coating Component
glass fibers
Reinforcing Layer
secondary inorganic filler (dielectric and flame retardant)
Secondary Filler
0.5 to 10
Materials:BNAl₂O₃
2
Composite Fabrication
Step 2
Process details
steps:forming mixture of thermosetting composition and coated BN particles, coating reinforcing layer with mixture, curing thermosetting composition
partial cure option:pre-preg
optional roll to roll:true
Materials:BNpolymer matrixglass fibers
≥90 %
BN
Z-direction thermal conductivity (ASTM D5470-17, TIM Tester 1300)
≥ 0.8 W/mK
BNpolymer matrix
Water absorption (ASTM D570-98(2018))
≤0.15 wt%
polymer matrix
Intrinsic thermal conductivity of hexagonal boron nitride particles
10–300 W/mK
BN
Thickness
0.5–100 nm
—
Thickness
1–100 nm
—
Thickness
0.1–1000 µm
—
Thickness
5–500 µm
—
Thickness
25–150 µm
—
Thickness
0.5–30 nm
—
Thickness
1–20 nm
—
Thickness
500–100000 nm
—
Thickness
10–250 µm
—
Thickness
3–40 µm
—
Thickness
0.1–100 nm
—
Thickness
1–10 nm
—
Temperature
150–200 °C
—
Duration
6–10 hours
—
Temperature
500–1500 °C
—
Duration
4–18 hours
—
Thickness
400–500 µm
—
Thickness
30–40 µm
—
Pressure
1–90 pa
—
Thickness
3–200 µm
—
Thickness
9–180 µm
—
Temperature
150–390 °C
—
Pressure
2–20 pa
—
Thickness
≤ 1 µm
—
Duration
≥ 4 hours
—
Thickness
0.5–10 nm
—
US 5,571,609 A
5,571,609 A 11/1996 St. Lawrence et al.
US 5,898,009 A5,898,009 A 4/1999 Shaffer et al.
US 5,972,811 A5,972,811 A 10/1999 St. Lawrence et al.
US 6,048,511 A6,048,511 A 4/2000 Shaffer et al.
US 6,071,836 A6,071,836 A 6/2000 St. Lawrence et al.
US 6,147,243 A6,147,243 A 11/2000 Onodera et al.
US 6,291,374 B16,291,374 B1 9/2001 Landi
US 6,312,621 B16,312,621 B1 11/2001 Pedigo et al.
US 6,322,621 B16,322,621 B1 11/2001 Pedigo et al.
US 6,586,533 B16,586,533 B1 7/2003 Landi et al.
US 6,613,383 B16,613,383 B1 9/2003 George et al.
US 6,713,177 B26,713,177 B2 3/2004 George et al.
US 6,913,827 B26,913,827 B2 7/2005 George et al.
US 6,951,583 B26,951,583 B2 10/2005 Clere et al.
US 8,875,813 B28,875,813 B2 11/2014 Zhan et al.
US 9,546,424 B29,546,424 B2 1/2017 King et al.
US 2002/0123285 A12002/0123285 A1 9/2002 Dana et al.
US 2003/0026989 A12003/0026989 A1 2/2003 George et al.
US 2005/0041373 A12005/0041373 A1 2/2005 Pruss et al.
US 2007/0093587 A12007/0093587 A1 4/2007 Shen et al.
US 2016/0276072 A12016/0276072 A1 9/2016 Sethumadhavan et al.
US 2017/0022600 A12017/0022600 A1 1/2017 King et al.
US 2017/0022608 A12017/0022608 A1 1/2017 King et al.
US 2017/0055339 A12017/0055339 A1 * 2/2017 Zhang.................. H05K 1/0373examiner
US 2017/0145266 A12017/0145266 A1 5/2017 Scholz
JP 2017128662 AJP 2017128662 A 7/2017
KR 20180007551 AKR 20180007551 A 1/2018
WO 03008186 A1WO 03008186 A1 1/2003
WO 2008036657 A1WO 2008036657 A1 3/2008
WO 2008036662 A2WO 2008036662 A2 3/2008
WO 2008130894 A1WO 2008130894 A1 10/2008
WO 2010141432 A1WO 2010141432 A1 12/2010
WO 2018093987 A1WO 2018093987 A1 5/2018
Cited non-patent literature · 8
Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions. Ferguson et al.’s “Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions,” Chem. Mater. 2000, 12, 3472-3480 (Year: 2000).
Growth mode of alumina atomic layer deposition on nanopowders. “Growth mode of alumina atomic layer deposition on nanopowders,”
Manandhar et al., Journal of Vacuum Science & Technology A 35, 041503 (2017) (Year: 2017).
Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions. Ferguson et al., “Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions,” Aug. 1, 2000, Applied surface Science vol. 162-163, pp. 280-292.
Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles. Ferguson et al., “Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles,” 2000, This Solid Films, 371, pp. 95-104.
Thermally Conductive Dieletrics without Halogens or Phosphorous. Hill et al., “Thermally Conductive Dieletrics without Halogens or Phosphorous,” (2006), OnBoard Technology, pp. 8-11. International Search Report; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019;dated Jan. 24, 2020; 6 pages.
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Liu et al., “The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition,” 2012, Appl. Phys. Lett. 100, 152115. pp. 1-4.
Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD. Wank et al., “Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD,” (2004) Powder Technology, vol. 142, pp. 59-69. Written Opinion; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019; dated Jan. 24, 2020; 7 pages.
Coating Deposited By AldThermally Conductive Filler Or Coating
silicon dioxide
SiO₂
Coating Component Or Dielectric Filler
Coating Component
glass fibers
Reinforcing Layer
secondary inorganic filler (dielectric and flame retardant)
Secondary Filler
0.5 to 10
Materials:BNAl₂O₃
2
Composite Fabrication
Step 2
Process details
steps:forming mixture of thermosetting composition and coated BN particles, coating reinforcing layer with mixture, curing thermosetting composition
partial cure option:pre-preg
optional roll to roll:true
Materials:BNpolymer matrixglass fibers
≥90 %
BN
Z-direction thermal conductivity (ASTM D5470-17, TIM Tester 1300)
≥ 0.8 W/mK
BNpolymer matrix
Water absorption (ASTM D570-98(2018))
≤0.15 wt%
polymer matrix
Intrinsic thermal conductivity of hexagonal boron nitride particles
10–300 W/mK
BN
Thickness
0.5–100 nm
—
Thickness
1–100 nm
—
Thickness
0.1–1000 µm
—
Thickness
5–500 µm
—
Thickness
25–150 µm
—
Thickness
0.5–30 nm
—
Thickness
1–20 nm
—
Thickness
500–100000 nm
—
Thickness
10–250 µm
—
Thickness
3–40 µm
—
Thickness
0.1–100 nm
—
Thickness
1–10 nm
—
Temperature
150–200 °C
—
Duration
6–10 hours
—
Temperature
500–1500 °C
—
Duration
4–18 hours
—
Thickness
400–500 µm
—
Thickness
30–40 µm
—
Pressure
1–90 pa
—
Thickness
3–200 µm
—
Thickness
9–180 µm
—
Temperature
150–390 °C
—
Pressure
2–20 pa
—
Thickness
≤ 1 µm
—
Duration
≥ 4 hours
—
Thickness
0.5–10 nm
—
US 5,571,609 A
5,571,609 A 11/1996 St. Lawrence et al.
US 5,898,009 A5,898,009 A 4/1999 Shaffer et al.
US 5,972,811 A5,972,811 A 10/1999 St. Lawrence et al.
US 6,048,511 A6,048,511 A 4/2000 Shaffer et al.
US 6,071,836 A6,071,836 A 6/2000 St. Lawrence et al.
US 6,147,243 A6,147,243 A 11/2000 Onodera et al.
US 6,291,374 B16,291,374 B1 9/2001 Landi
US 6,312,621 B16,312,621 B1 11/2001 Pedigo et al.
US 6,322,621 B16,322,621 B1 11/2001 Pedigo et al.
US 6,586,533 B16,586,533 B1 7/2003 Landi et al.
US 6,613,383 B16,613,383 B1 9/2003 George et al.
US 6,713,177 B26,713,177 B2 3/2004 George et al.
US 6,913,827 B26,913,827 B2 7/2005 George et al.
US 6,951,583 B26,951,583 B2 10/2005 Clere et al.
US 8,875,813 B28,875,813 B2 11/2014 Zhan et al.
US 9,546,424 B29,546,424 B2 1/2017 King et al.
US 2002/0123285 A12002/0123285 A1 9/2002 Dana et al.
US 2003/0026989 A12003/0026989 A1 2/2003 George et al.
US 2005/0041373 A12005/0041373 A1 2/2005 Pruss et al.
US 2007/0093587 A12007/0093587 A1 4/2007 Shen et al.
US 2016/0276072 A12016/0276072 A1 9/2016 Sethumadhavan et al.
US 2017/0022600 A12017/0022600 A1 1/2017 King et al.
US 2017/0022608 A12017/0022608 A1 1/2017 King et al.
US 2017/0055339 A12017/0055339 A1 * 2/2017 Zhang.................. H05K 1/0373examiner
US 2017/0145266 A12017/0145266 A1 5/2017 Scholz
JP 2017128662 AJP 2017128662 A 7/2017
KR 20180007551 AKR 20180007551 A 1/2018
WO 03008186 A1WO 03008186 A1 1/2003
WO 2008036657 A1WO 2008036657 A1 3/2008
WO 2008036662 A2WO 2008036662 A2 3/2008
WO 2008130894 A1WO 2008130894 A1 10/2008
WO 2010141432 A1WO 2010141432 A1 12/2010
WO 2018093987 A1WO 2018093987 A1 5/2018
Cited non-patent literature · 8
Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions. Ferguson et al.’s “Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions,” Chem. Mater. 2000, 12, 3472-3480 (Year: 2000).
Growth mode of alumina atomic layer deposition on nanopowders. “Growth mode of alumina atomic layer deposition on nanopowders,”
Manandhar et al., Journal of Vacuum Science & Technology A 35, 041503 (2017) (Year: 2017).
Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions. Ferguson et al., “Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions,” Aug. 1, 2000, Applied surface Science vol. 162-163, pp. 280-292.
Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles. Ferguson et al., “Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles,” 2000, This Solid Films, 371, pp. 95-104.
Thermally Conductive Dieletrics without Halogens or Phosphorous. Hill et al., “Thermally Conductive Dieletrics without Halogens or Phosphorous,” (2006), OnBoard Technology, pp. 8-11. International Search Report; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019;dated Jan. 24, 2020; 6 pages.
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Liu et al., “The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition,” 2012, Appl. Phys. Lett. 100, 152115. pp. 1-4.
Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD. Wank et al., “Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD,” (2004) Powder Technology, vol. 142, pp. 59-69. Written Opinion; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019; dated Jan. 24, 2020; 7 pages.
Coating Deposited By AldThermally Conductive Filler Or Coating
silicon dioxide
SiO₂
Coating Component Or Dielectric Filler
Coating Component
glass fibers
Reinforcing Layer
secondary inorganic filler (dielectric and flame retardant)
Secondary Filler
0.5 to 10
Materials:BNAl₂O₃
2
Composite Fabrication
Step 2
Process details
steps:forming mixture of thermosetting composition and coated BN particles, coating reinforcing layer with mixture, curing thermosetting composition
partial cure option:pre-preg
optional roll to roll:true
Materials:BNpolymer matrixglass fibers
≥90 %
BN
Z-direction thermal conductivity (ASTM D5470-17, TIM Tester 1300)
≥ 0.8 W/mK
BNpolymer matrix
Water absorption (ASTM D570-98(2018))
≤0.15 wt%
polymer matrix
Intrinsic thermal conductivity of hexagonal boron nitride particles
10–300 W/mK
BN
Thickness
0.5–100 nm
—
Thickness
1–100 nm
—
Thickness
0.1–1000 µm
—
Thickness
5–500 µm
—
Thickness
25–150 µm
—
Thickness
0.5–30 nm
—
Thickness
1–20 nm
—
Thickness
500–100000 nm
—
Thickness
10–250 µm
—
Thickness
3–40 µm
—
Thickness
0.1–100 nm
—
Thickness
1–10 nm
—
Temperature
150–200 °C
—
Duration
6–10 hours
—
Temperature
500–1500 °C
—
Duration
4–18 hours
—
Thickness
400–500 µm
—
Thickness
30–40 µm
—
Pressure
1–90 pa
—
Thickness
3–200 µm
—
Thickness
9–180 µm
—
Temperature
150–390 °C
—
Pressure
2–20 pa
—
Thickness
≤ 1 µm
—
Duration
≥ 4 hours
—
Thickness
0.5–10 nm
—
US 5,571,609 A
5,571,609 A 11/1996 St. Lawrence et al.
US 5,898,009 A5,898,009 A 4/1999 Shaffer et al.
US 5,972,811 A5,972,811 A 10/1999 St. Lawrence et al.
US 6,048,511 A6,048,511 A 4/2000 Shaffer et al.
US 6,071,836 A6,071,836 A 6/2000 St. Lawrence et al.
US 6,147,243 A6,147,243 A 11/2000 Onodera et al.
US 6,291,374 B16,291,374 B1 9/2001 Landi
US 6,312,621 B16,312,621 B1 11/2001 Pedigo et al.
US 6,322,621 B16,322,621 B1 11/2001 Pedigo et al.
US 6,586,533 B16,586,533 B1 7/2003 Landi et al.
US 6,613,383 B16,613,383 B1 9/2003 George et al.
US 6,713,177 B26,713,177 B2 3/2004 George et al.
US 6,913,827 B26,913,827 B2 7/2005 George et al.
US 6,951,583 B26,951,583 B2 10/2005 Clere et al.
US 8,875,813 B28,875,813 B2 11/2014 Zhan et al.
US 9,546,424 B29,546,424 B2 1/2017 King et al.
US 2002/0123285 A12002/0123285 A1 9/2002 Dana et al.
US 2003/0026989 A12003/0026989 A1 2/2003 George et al.
US 2005/0041373 A12005/0041373 A1 2/2005 Pruss et al.
US 2007/0093587 A12007/0093587 A1 4/2007 Shen et al.
US 2016/0276072 A12016/0276072 A1 9/2016 Sethumadhavan et al.
US 2017/0022600 A12017/0022600 A1 1/2017 King et al.
US 2017/0022608 A12017/0022608 A1 1/2017 King et al.
US 2017/0055339 A12017/0055339 A1 * 2/2017 Zhang.................. H05K 1/0373examiner
US 2017/0145266 A12017/0145266 A1 5/2017 Scholz
JP 2017128662 AJP 2017128662 A 7/2017
KR 20180007551 AKR 20180007551 A 1/2018
WO 03008186 A1WO 03008186 A1 1/2003
WO 2008036657 A1WO 2008036657 A1 3/2008
WO 2008036662 A2WO 2008036662 A2 3/2008
WO 2008130894 A1WO 2008130894 A1 10/2008
WO 2010141432 A1WO 2010141432 A1 12/2010
WO 2018093987 A1WO 2018093987 A1 5/2018
Cited non-patent literature · 8
Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions. Ferguson et al.’s “Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential surface Reactions,” Chem. Mater. 2000, 12, 3472-3480 (Year: 2000).
Growth mode of alumina atomic layer deposition on nanopowders. “Growth mode of alumina atomic layer deposition on nanopowders,”
Manandhar et al., Journal of Vacuum Science & Technology A 35, 041503 (2017) (Year: 2017).
Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions. Ferguson et al., “Atomic layer deposition of AI2O3 and SiO2 on BN particles using sequential surface reactions,” Aug. 1, 2000, Applied surface Science vol. 162-163, pp. 280-292.
Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles. Ferguson et al., “Atomic layer deposition of ultrathin and conformal AI2O3 films on BN particles,” 2000, This Solid Films, 371, pp. 95-104.
Thermally Conductive Dieletrics without Halogens or Phosphorous. Hill et al., “Thermally Conductive Dieletrics without Halogens or Phosphorous,” (2006), OnBoard Technology, pp. 8-11. International Search Report; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019;dated Jan. 24, 2020; 6 pages.
The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Liu et al., “The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition,” 2012, Appl. Phys. Lett. 100, 152115. pp. 1-4.
Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD. Wank et al., “Nanocoating individual cohesive boron nitride par- ticles in a fluidized bed by ALD,” (2004) Powder Technology, vol. 142, pp. 59-69. Written Opinion; International Application No. PCT/US2019/054173; International Filing Date: Oct. 2, 2019; dated Jan. 24, 2020; 7 pages.