Patent
US 9,972,447PRINTED SUPERCAPACITORS BASED ON GRAPHENE
Bing R. Hsieh
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A is a plan view and Figure l B is a cross-section schematic illustration of an array of supercapacitors, according to an embodiment of the invention.
Figure 2A is a plan view and
Figure 2 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3A is a plan view and
Figure 3 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3C is a cross-section schematic illustration of an array of supercapacitors in a variation of those shown in
Figure 4A is a plan view and
Figure 4 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 5A is a plan view and
Figure 5B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 6A is a cross-section schematic illustration of an array of supercapacitors that -3-Docket No. BH- 00 1US PATENT have a carbon layer between the substrate and the current collector, according to an embodiment of the invention.
Figure 6B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 7A is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector, according to an embodiment of the invention.
Figure 7B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 8A is a cross-section schematic illustration of a stack of thin film layers that can be used to form a supercapacitor device array.
Figure 8B is a plan-view schematic illustration of a supercapacitor device array that has been formed from the film layers in
Figure 8 C is a cross-section schematic illustration of the supercapacitor of
Figure 9A is a cross-section view of a carbon or metal line that has been made using a printing method.
Figure 9B is a cross-section view of a carbon or metal line that has been made using a masking and etching method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A supercapacitor device array comprising: a plurality of devices arranged parallel to one another on a substrate, wherein each device comprises; a first carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; a first metal current collector layer in contact with at least a portion of one sidewall and optionally some or all of the top surface of the first carbon electrode; a second carbon electrode parallel to the first carbon electrode, the second carbon electrode having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; and a second metal current collector layer, opposite in polarity to the first current collector layer, the second metal current collector layer in contact with at least a portion of a sidewall of the second carbon electrode and optionally some or all of the top surface of the second carbon electrode, the sidewall of the second carbon electrode facing away from the first carbon electrode; and an electrolyte in contact with the carbon electrodes; wherein, within the plurality of devices, the first metal current collector layer and the second metal current collector layer each has a separate comb structure and the comb structures are arranged in an interdigitated configuration current collector is in contact with a plurality of the first carbon electrodes, and the second metal current collector is in rnntnrt w ith n nhlra lit offthp pccnnd rnrhnn plpctrordpe Currently amended
The device array of Claim 1 wherein each device further comprises: a third carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the third carbon electrode parallel to the first carbon electrode; wherein the first metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the third carbon electrode; and a fourth carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the fourth carbon electrode parallel to the second carbon electrode; wherein the second metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the fourth carbon electrode. Original
The device array of Claim 1, wherein the carbon for each electrode is selected independently from the group consisting of activated carbon, carbon aerogels, carbon onions, carbide derived carbon, carbon nanotubes, fullerenes, graphite, graphene, and mixtures thereof. Original
The device array of Claim 1, wherein the carbon electrodes have a thickness between about 0.01 p m and 1000 pm, Original
The device array of Claim 1, wherein the substrate material is selected from the group consisting of paper, plastic, glass, ceramic, and silicon. Original
The device array of Claim 1, wherein the current collector layers each comprise a metal selected independently from the group consisting of silver, gold, aluminum, copper, and nickel. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise metal nanowires or metal nanoparticles or mixtures thereof. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise a mixture of silver nanowires, graphene and binder. Original
A supercapacitor device array comprising: a first array of parallel carbon lines on a substrate, the first array comprising first carbon lines and second carbon lines, the first carbon lines and the second carbon lines occupying alternating positions in the first array of parallel carbon lines; a first current collector having a first polarity, the first current collector having a comb structure with parallel first current collector fingers, the first current collector fingers overlying the first carbon lines, the first current collector fingers having no contact with the substrate; a second current collector having a second polarity opposite to the first polarity, the second current collector having comb structure with parallel second current collector fingers, the second current collector fingers overlying the second carbon lines, the second current collector fingers having no contact with the substrate; a second array of parallel carbon lines parallel to the first array of parallel carbon lines, the second array comprising third carbon lines and fourth carbon lines, the third carbon lines and the fourth carbon lines occupying alternating positions in the second array of parallel carbon lines wherein: the third carbon lines overlie the first current collector fingers; and the fourth carbon lines overlie the second current collector fingers; and an electrolyte in contact with at least the second array of parallel carbon lines. Original
The device array of Claim 16 wherein at least one of the first array of parallel carbon lines and the second array of parallel carbon lines extends into the substrate. Original
The device array of Claim 16, wherein: the third carbon lines have no contact with the first carbon lines; and the fourth carbon lines have no contact with the second carbon lines. Original
The device array of Claim 16, wherein: the third carbon lines make continuous contact with the first carbon lines and optionally with the substrate, thereby encapsulating the first current collector fingers; and the fourth carbon lines make continuous contact with the second carbon lines and optionally with the substrate, thereby encapsulating the second current collector fingers. Original
A method of making a supercapacitor device array, comprising the steps of: a) providing a substrate that has a working surface; b) providing a carbon ink; c) printing the carbon ink onto the working surface of the substrate to form an array of parallel carbon electrode lines; d) drying the carbon ink; e) providing a metal ink; f) printing the metal ink to form two interdigitated current collector structures in contact with the array of carbon electrodes; g) heat treating the substrate; and h) applying an electrolyte to make contact with the carbon electrode lines. Original
Layer stacks claimed or described, ordered top of device to substrate.
supercapacitor device array (carbon-electrode sidewall-collector type)
supercapacitor device array (layered carbon-line/interdigitated-collector type)
Materials described outside the worked examples.
carbon electrode
metal current collector
electrolyte
activated carbon
carbon aerogels
carbon onions
carbide derived carbon
carbon nanotubes
fullerenes
graphite
graphene
binder
conducting additive
metal oxide
metal sulfide
polyvinylidene fluoride (PVDF) and its copolymers
metal powders
metal nanowires
acetylene black
polyaniline
polypyrrole
polythiophene
ruthenium oxide
RuO₂
iridium oxide
IrO₂
iron oxide
Fe₃O₄
cobalt oxide
Co₃O₄
nickel oxide
NiO
nickel hydroxide
Ni(OH)2
vanadium oxide
V₂O₅
manganese oxide
MnO₂
titanium sulfide
TiS₂
substrate
silver nanowires
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–50 nm | — |
Temperature | 300–1200 °C | — |
Temperature | 150–300 °C | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 50 nm | — |
Duration | 1–120 minutes | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A is a plan view and Figure l B is a cross-section schematic illustration of an array of supercapacitors, according to an embodiment of the invention.
Figure 2A is a plan view and
Figure 2 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3A is a plan view and
Figure 3 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3C is a cross-section schematic illustration of an array of supercapacitors in a variation of those shown in
Figure 4A is a plan view and
Figure 4 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 5A is a plan view and
Figure 5B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 6A is a cross-section schematic illustration of an array of supercapacitors that -3-Docket No. BH- 00 1US PATENT have a carbon layer between the substrate and the current collector, according to an embodiment of the invention.
Figure 6B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 7A is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector, according to an embodiment of the invention.
Figure 7B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 8A is a cross-section schematic illustration of a stack of thin film layers that can be used to form a supercapacitor device array.
Figure 8B is a plan-view schematic illustration of a supercapacitor device array that has been formed from the film layers in
Figure 8 C is a cross-section schematic illustration of the supercapacitor of
Figure 9A is a cross-section view of a carbon or metal line that has been made using a printing method.
Figure 9B is a cross-section view of a carbon or metal line that has been made using a masking and etching method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A supercapacitor device array comprising: a plurality of devices arranged parallel to one another on a substrate, wherein each device comprises; a first carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; a first metal current collector layer in contact with at least a portion of one sidewall and optionally some or all of the top surface of the first carbon electrode; a second carbon electrode parallel to the first carbon electrode, the second carbon electrode having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; and a second metal current collector layer, opposite in polarity to the first current collector layer, the second metal current collector layer in contact with at least a portion of a sidewall of the second carbon electrode and optionally some or all of the top surface of the second carbon electrode, the sidewall of the second carbon electrode facing away from the first carbon electrode; and an electrolyte in contact with the carbon electrodes; wherein, within the plurality of devices, the first metal current collector layer and the second metal current collector layer each has a separate comb structure and the comb structures are arranged in an interdigitated configuration current collector is in contact with a plurality of the first carbon electrodes, and the second metal current collector is in rnntnrt w ith n nhlra lit offthp pccnnd rnrhnn plpctrordpe Currently amended
The device array of Claim 1 wherein each device further comprises: a third carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the third carbon electrode parallel to the first carbon electrode; wherein the first metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the third carbon electrode; and a fourth carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the fourth carbon electrode parallel to the second carbon electrode; wherein the second metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the fourth carbon electrode. Original
The device array of Claim 1, wherein the carbon for each electrode is selected independently from the group consisting of activated carbon, carbon aerogels, carbon onions, carbide derived carbon, carbon nanotubes, fullerenes, graphite, graphene, and mixtures thereof. Original
The device array of Claim 1, wherein the carbon electrodes have a thickness between about 0.01 p m and 1000 pm, Original
The device array of Claim 1, wherein the substrate material is selected from the group consisting of paper, plastic, glass, ceramic, and silicon. Original
The device array of Claim 1, wherein the current collector layers each comprise a metal selected independently from the group consisting of silver, gold, aluminum, copper, and nickel. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise metal nanowires or metal nanoparticles or mixtures thereof. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise a mixture of silver nanowires, graphene and binder. Original
A supercapacitor device array comprising: a first array of parallel carbon lines on a substrate, the first array comprising first carbon lines and second carbon lines, the first carbon lines and the second carbon lines occupying alternating positions in the first array of parallel carbon lines; a first current collector having a first polarity, the first current collector having a comb structure with parallel first current collector fingers, the first current collector fingers overlying the first carbon lines, the first current collector fingers having no contact with the substrate; a second current collector having a second polarity opposite to the first polarity, the second current collector having comb structure with parallel second current collector fingers, the second current collector fingers overlying the second carbon lines, the second current collector fingers having no contact with the substrate; a second array of parallel carbon lines parallel to the first array of parallel carbon lines, the second array comprising third carbon lines and fourth carbon lines, the third carbon lines and the fourth carbon lines occupying alternating positions in the second array of parallel carbon lines wherein: the third carbon lines overlie the first current collector fingers; and the fourth carbon lines overlie the second current collector fingers; and an electrolyte in contact with at least the second array of parallel carbon lines. Original
The device array of Claim 16 wherein at least one of the first array of parallel carbon lines and the second array of parallel carbon lines extends into the substrate. Original
The device array of Claim 16, wherein: the third carbon lines have no contact with the first carbon lines; and the fourth carbon lines have no contact with the second carbon lines. Original
The device array of Claim 16, wherein: the third carbon lines make continuous contact with the first carbon lines and optionally with the substrate, thereby encapsulating the first current collector fingers; and the fourth carbon lines make continuous contact with the second carbon lines and optionally with the substrate, thereby encapsulating the second current collector fingers. Original
A method of making a supercapacitor device array, comprising the steps of: a) providing a substrate that has a working surface; b) providing a carbon ink; c) printing the carbon ink onto the working surface of the substrate to form an array of parallel carbon electrode lines; d) drying the carbon ink; e) providing a metal ink; f) printing the metal ink to form two interdigitated current collector structures in contact with the array of carbon electrodes; g) heat treating the substrate; and h) applying an electrolyte to make contact with the carbon electrode lines. Original
Layer stacks claimed or described, ordered top of device to substrate.
supercapacitor device array (carbon-electrode sidewall-collector type)
supercapacitor device array (layered carbon-line/interdigitated-collector type)
Materials described outside the worked examples.
carbon electrode
metal current collector
electrolyte
activated carbon
carbon aerogels
carbon onions
carbide derived carbon
carbon nanotubes
fullerenes
graphite
graphene
binder
conducting additive
metal oxide
metal sulfide
polyvinylidene fluoride (PVDF) and its copolymers
metal powders
metal nanowires
acetylene black
polyaniline
polypyrrole
polythiophene
ruthenium oxide
RuO₂
iridium oxide
IrO₂
iron oxide
Fe₃O₄
cobalt oxide
Co₃O₄
nickel oxide
NiO
nickel hydroxide
Ni(OH)2
vanadium oxide
V₂O₅
manganese oxide
MnO₂
titanium sulfide
TiS₂
substrate
silver nanowires
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–50 nm | — |
Temperature | 300–1200 °C | — |
Temperature | 150–300 °C | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 50 nm | — |
Duration | 1–120 minutes | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A is a plan view and Figure l B is a cross-section schematic illustration of an array of supercapacitors, according to an embodiment of the invention.
Figure 2A is a plan view and
Figure 2 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3A is a plan view and
Figure 3 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3C is a cross-section schematic illustration of an array of supercapacitors in a variation of those shown in
Figure 4A is a plan view and
Figure 4 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 5A is a plan view and
Figure 5B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 6A is a cross-section schematic illustration of an array of supercapacitors that -3-Docket No. BH- 00 1US PATENT have a carbon layer between the substrate and the current collector, according to an embodiment of the invention.
Figure 6B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 7A is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector, according to an embodiment of the invention.
Figure 7B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 8A is a cross-section schematic illustration of a stack of thin film layers that can be used to form a supercapacitor device array.
Figure 8B is a plan-view schematic illustration of a supercapacitor device array that has been formed from the film layers in
Figure 8 C is a cross-section schematic illustration of the supercapacitor of
Figure 9A is a cross-section view of a carbon or metal line that has been made using a printing method.
Figure 9B is a cross-section view of a carbon or metal line that has been made using a masking and etching method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A supercapacitor device array comprising: a plurality of devices arranged parallel to one another on a substrate, wherein each device comprises; a first carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; a first metal current collector layer in contact with at least a portion of one sidewall and optionally some or all of the top surface of the first carbon electrode; a second carbon electrode parallel to the first carbon electrode, the second carbon electrode having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; and a second metal current collector layer, opposite in polarity to the first current collector layer, the second metal current collector layer in contact with at least a portion of a sidewall of the second carbon electrode and optionally some or all of the top surface of the second carbon electrode, the sidewall of the second carbon electrode facing away from the first carbon electrode; and an electrolyte in contact with the carbon electrodes; wherein, within the plurality of devices, the first metal current collector layer and the second metal current collector layer each has a separate comb structure and the comb structures are arranged in an interdigitated configuration current collector is in contact with a plurality of the first carbon electrodes, and the second metal current collector is in rnntnrt w ith n nhlra lit offthp pccnnd rnrhnn plpctrordpe Currently amended
The device array of Claim 1 wherein each device further comprises: a third carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the third carbon electrode parallel to the first carbon electrode; wherein the first metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the third carbon electrode; and a fourth carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the fourth carbon electrode parallel to the second carbon electrode; wherein the second metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the fourth carbon electrode. Original
The device array of Claim 1, wherein the carbon for each electrode is selected independently from the group consisting of activated carbon, carbon aerogels, carbon onions, carbide derived carbon, carbon nanotubes, fullerenes, graphite, graphene, and mixtures thereof. Original
The device array of Claim 1, wherein the carbon electrodes have a thickness between about 0.01 p m and 1000 pm, Original
The device array of Claim 1, wherein the substrate material is selected from the group consisting of paper, plastic, glass, ceramic, and silicon. Original
The device array of Claim 1, wherein the current collector layers each comprise a metal selected independently from the group consisting of silver, gold, aluminum, copper, and nickel. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise metal nanowires or metal nanoparticles or mixtures thereof. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise a mixture of silver nanowires, graphene and binder. Original
A supercapacitor device array comprising: a first array of parallel carbon lines on a substrate, the first array comprising first carbon lines and second carbon lines, the first carbon lines and the second carbon lines occupying alternating positions in the first array of parallel carbon lines; a first current collector having a first polarity, the first current collector having a comb structure with parallel first current collector fingers, the first current collector fingers overlying the first carbon lines, the first current collector fingers having no contact with the substrate; a second current collector having a second polarity opposite to the first polarity, the second current collector having comb structure with parallel second current collector fingers, the second current collector fingers overlying the second carbon lines, the second current collector fingers having no contact with the substrate; a second array of parallel carbon lines parallel to the first array of parallel carbon lines, the second array comprising third carbon lines and fourth carbon lines, the third carbon lines and the fourth carbon lines occupying alternating positions in the second array of parallel carbon lines wherein: the third carbon lines overlie the first current collector fingers; and the fourth carbon lines overlie the second current collector fingers; and an electrolyte in contact with at least the second array of parallel carbon lines. Original
The device array of Claim 16 wherein at least one of the first array of parallel carbon lines and the second array of parallel carbon lines extends into the substrate. Original
The device array of Claim 16, wherein: the third carbon lines have no contact with the first carbon lines; and the fourth carbon lines have no contact with the second carbon lines. Original
The device array of Claim 16, wherein: the third carbon lines make continuous contact with the first carbon lines and optionally with the substrate, thereby encapsulating the first current collector fingers; and the fourth carbon lines make continuous contact with the second carbon lines and optionally with the substrate, thereby encapsulating the second current collector fingers. Original
A method of making a supercapacitor device array, comprising the steps of: a) providing a substrate that has a working surface; b) providing a carbon ink; c) printing the carbon ink onto the working surface of the substrate to form an array of parallel carbon electrode lines; d) drying the carbon ink; e) providing a metal ink; f) printing the metal ink to form two interdigitated current collector structures in contact with the array of carbon electrodes; g) heat treating the substrate; and h) applying an electrolyte to make contact with the carbon electrode lines. Original
Layer stacks claimed or described, ordered top of device to substrate.
supercapacitor device array (carbon-electrode sidewall-collector type)
supercapacitor device array (layered carbon-line/interdigitated-collector type)
Materials described outside the worked examples.
carbon electrode
metal current collector
electrolyte
activated carbon
carbon aerogels
carbon onions
carbide derived carbon
carbon nanotubes
fullerenes
graphite
graphene
binder
conducting additive
metal oxide
metal sulfide
polyvinylidene fluoride (PVDF) and its copolymers
metal powders
metal nanowires
acetylene black
polyaniline
polypyrrole
polythiophene
ruthenium oxide
RuO₂
iridium oxide
IrO₂
iron oxide
Fe₃O₄
cobalt oxide
Co₃O₄
nickel oxide
NiO
nickel hydroxide
Ni(OH)2
vanadium oxide
V₂O₅
manganese oxide
MnO₂
titanium sulfide
TiS₂
substrate
silver nanowires
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–50 nm | — |
Temperature | 300–1200 °C | — |
Temperature | 150–300 °C | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 50 nm | — |
Duration | 1–120 minutes | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A is a plan view and Figure l B is a cross-section schematic illustration of an array of supercapacitors, according to an embodiment of the invention.
Figure 2A is a plan view and
Figure 2 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3A is a plan view and
Figure 3 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 3C is a cross-section schematic illustration of an array of supercapacitors in a variation of those shown in
Figure 4A is a plan view and
Figure 4 B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 5A is a plan view and
Figure 5B is a cross-section schematic illustration of an array of supercapacitors, according to another embodiment of the invention.
Figure 6A is a cross-section schematic illustration of an array of supercapacitors that -3-Docket No. BH- 00 1US PATENT have a carbon layer between the substrate and the current collector, according to an embodiment of the invention.
Figure 6B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 7A is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector, according to an embodiment of the invention.
Figure 7B is a cross-section schematic illustration of an array of supercapacitors that have a carbon layer formed from the substrate between the substrate and the current collector and an additional carbon layer over the current collector, according to an embodiment of the invention.
Figure 8A is a cross-section schematic illustration of a stack of thin film layers that can be used to form a supercapacitor device array.
Figure 8B is a plan-view schematic illustration of a supercapacitor device array that has been formed from the film layers in
Figure 8 C is a cross-section schematic illustration of the supercapacitor of
Figure 9A is a cross-section view of a carbon or metal line that has been made using a printing method.
Figure 9B is a cross-section view of a carbon or metal line that has been made using a masking and etching method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A supercapacitor device array comprising: a plurality of devices arranged parallel to one another on a substrate, wherein each device comprises; a first carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; a first metal current collector layer in contact with at least a portion of one sidewall and optionally some or all of the top surface of the first carbon electrode; a second carbon electrode parallel to the first carbon electrode, the second carbon electrode having an upper surface, a lower surface in contact with the substrate, and two sidewalls opposite to one another; and a second metal current collector layer, opposite in polarity to the first current collector layer, the second metal current collector layer in contact with at least a portion of a sidewall of the second carbon electrode and optionally some or all of the top surface of the second carbon electrode, the sidewall of the second carbon electrode facing away from the first carbon electrode; and an electrolyte in contact with the carbon electrodes; wherein, within the plurality of devices, the first metal current collector layer and the second metal current collector layer each has a separate comb structure and the comb structures are arranged in an interdigitated configuration current collector is in contact with a plurality of the first carbon electrodes, and the second metal current collector is in rnntnrt w ith n nhlra lit offthp pccnnd rnrhnn plpctrordpe Currently amended
The device array of Claim 1 wherein each device further comprises: a third carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the third carbon electrode parallel to the first carbon electrode; wherein the first metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the third carbon electrode; and a fourth carbon electrode, having an upper surface, a lower surface in contact with the substrate, and two sidewalls, the fourth carbon electrode parallel to the second carbon electrode; wherein the second metal current collector layer is also in contact with at least a portion of one sidewall and optionally some or all of the top surface of the fourth carbon electrode. Original
The device array of Claim 1, wherein the carbon for each electrode is selected independently from the group consisting of activated carbon, carbon aerogels, carbon onions, carbide derived carbon, carbon nanotubes, fullerenes, graphite, graphene, and mixtures thereof. Original
The device array of Claim 1, wherein the carbon electrodes have a thickness between about 0.01 p m and 1000 pm, Original
The device array of Claim 1, wherein the substrate material is selected from the group consisting of paper, plastic, glass, ceramic, and silicon. Original
The device array of Claim 1, wherein the current collector layers each comprise a metal selected independently from the group consisting of silver, gold, aluminum, copper, and nickel. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise metal nanowires or metal nanoparticles or mixtures thereof. Original
The device array of Claim 1, wherein at least some of the current collector layers comprise a mixture of silver nanowires, graphene and binder. Original
A supercapacitor device array comprising: a first array of parallel carbon lines on a substrate, the first array comprising first carbon lines and second carbon lines, the first carbon lines and the second carbon lines occupying alternating positions in the first array of parallel carbon lines; a first current collector having a first polarity, the first current collector having a comb structure with parallel first current collector fingers, the first current collector fingers overlying the first carbon lines, the first current collector fingers having no contact with the substrate; a second current collector having a second polarity opposite to the first polarity, the second current collector having comb structure with parallel second current collector fingers, the second current collector fingers overlying the second carbon lines, the second current collector fingers having no contact with the substrate; a second array of parallel carbon lines parallel to the first array of parallel carbon lines, the second array comprising third carbon lines and fourth carbon lines, the third carbon lines and the fourth carbon lines occupying alternating positions in the second array of parallel carbon lines wherein: the third carbon lines overlie the first current collector fingers; and the fourth carbon lines overlie the second current collector fingers; and an electrolyte in contact with at least the second array of parallel carbon lines. Original
The device array of Claim 16 wherein at least one of the first array of parallel carbon lines and the second array of parallel carbon lines extends into the substrate. Original
The device array of Claim 16, wherein: the third carbon lines have no contact with the first carbon lines; and the fourth carbon lines have no contact with the second carbon lines. Original
The device array of Claim 16, wherein: the third carbon lines make continuous contact with the first carbon lines and optionally with the substrate, thereby encapsulating the first current collector fingers; and the fourth carbon lines make continuous contact with the second carbon lines and optionally with the substrate, thereby encapsulating the second current collector fingers. Original
A method of making a supercapacitor device array, comprising the steps of: a) providing a substrate that has a working surface; b) providing a carbon ink; c) printing the carbon ink onto the working surface of the substrate to form an array of parallel carbon electrode lines; d) drying the carbon ink; e) providing a metal ink; f) printing the metal ink to form two interdigitated current collector structures in contact with the array of carbon electrodes; g) heat treating the substrate; and h) applying an electrolyte to make contact with the carbon electrode lines. Original
Layer stacks claimed or described, ordered top of device to substrate.
supercapacitor device array (carbon-electrode sidewall-collector type)
supercapacitor device array (layered carbon-line/interdigitated-collector type)
Materials described outside the worked examples.
carbon electrode
metal current collector
electrolyte
activated carbon
carbon aerogels
carbon onions
carbide derived carbon
carbon nanotubes
fullerenes
graphite
graphene
binder
conducting additive
metal oxide
metal sulfide
polyvinylidene fluoride (PVDF) and its copolymers
metal powders
metal nanowires
acetylene black
polyaniline
polypyrrole
polythiophene
ruthenium oxide
RuO₂
iridium oxide
IrO₂
iron oxide
Fe₃O₄
cobalt oxide
Co₃O₄
nickel oxide
NiO
nickel hydroxide
Ni(OH)2
vanadium oxide
V₂O₅
manganese oxide
MnO₂
titanium sulfide
TiS₂
substrate
silver nanowires
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–50 nm | — |
Temperature | 300–1200 °C | — |
Temperature | 150–300 °C | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 50 nm | — |
Duration | 1–120 minutes | — |