Patent
US 9,344,127Patent
Atlas literature
Patent
US 9,344,127Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A radio frequency (RF) receiver, comprising: a baseband circuitry comprising: a graphene nano-electro-mechanical (GN EMS) based system including a source, a drain, a gate and a nanoscale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is configured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The RF receiver of claim 1, wherein the GNEMS based system is a baseband filter.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS resonator operates in capacitive transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system operates in transconductance-based transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS based system operates as a transimpedance load.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system receives an active load in casc o de configuration.
The R F receiver of claim 1, wherein the baseband circuitry further comprises a feedback.
The RF receiver of claim 1, wherein the baseband circuitry further comprises a dummy device configured to cancel trans-conductive background noise.
The R F receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry.
The RF receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry and a degenerative GNEMS based system.
The RF receiver of claim 1, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns.
The R F receiver of claim I, wherein the baseband circuitry is configured such that the GNEMS based system acts as active degeneration impedance.
A method for receiving a radio frequency (R F) signal at a system, comprising: receiving a wanted signal and an unwanted signal in a receiver circuitry; passing the wanted signal through a front-end mixer; feeding the wanted signal into a graphene nano-electro-mechanical (G NEMS) based system including a source, a drain, a gate and having a nano-scale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; and wherein the unwanted signal is rejected at the receiving circuitry.
The method of claim 12, wherein the system comprises: a baseband circuitry comprising: Active 22734063. 1 3 Application No.: 14/552,449 Attorney Docket No.: 070050.5396 [[a]] the graphene nano electro mechanical [[(]]GNEMS [[)]] based system including a source, a drain, a gate and [[a]] the nano scale suspended graphene menbranc resonator, the graphene membrane resonator suspended between the-source and the drain; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is con fi gured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The method of claim 12, further comprising feeding the signal through dual path noise cancelling circuitry.
The method of claim 12, further comprising feeding the signal through higher order filter architectures.
The method of claim 12, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns. Active 227340 63.1 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene nano-electro-mechanical system (GNEMS) based RF receiver
Materials described outside the worked examples.
graphene
MoS₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene membrane resonator radius | 1–50 micron | graphene |
GNEMS device component size (source, drain, gate) | — |
Patent
Atlas literature
Patent
US 9,344,127Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A radio frequency (RF) receiver, comprising: a baseband circuitry comprising: a graphene nano-electro-mechanical (GN EMS) based system including a source, a drain, a gate and a nanoscale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is configured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The RF receiver of claim 1, wherein the GNEMS based system is a baseband filter.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS resonator operates in capacitive transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system operates in transconductance-based transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS based system operates as a transimpedance load.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system receives an active load in casc o de configuration.
The R F receiver of claim 1, wherein the baseband circuitry further comprises a feedback.
The RF receiver of claim 1, wherein the baseband circuitry further comprises a dummy device configured to cancel trans-conductive background noise.
The R F receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry.
The RF receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry and a degenerative GNEMS based system.
The RF receiver of claim 1, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns.
The R F receiver of claim I, wherein the baseband circuitry is configured such that the GNEMS based system acts as active degeneration impedance.
A method for receiving a radio frequency (R F) signal at a system, comprising: receiving a wanted signal and an unwanted signal in a receiver circuitry; passing the wanted signal through a front-end mixer; feeding the wanted signal into a graphene nano-electro-mechanical (G NEMS) based system including a source, a drain, a gate and having a nano-scale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; and wherein the unwanted signal is rejected at the receiving circuitry.
The method of claim 12, wherein the system comprises: a baseband circuitry comprising: Active 22734063. 1 3 Application No.: 14/552,449 Attorney Docket No.: 070050.5396 [[a]] the graphene nano electro mechanical [[(]]GNEMS [[)]] based system including a source, a drain, a gate and [[a]] the nano scale suspended graphene menbranc resonator, the graphene membrane resonator suspended between the-source and the drain; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is con fi gured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The method of claim 12, further comprising feeding the signal through dual path noise cancelling circuitry.
The method of claim 12, further comprising feeding the signal through higher order filter architectures.
The method of claim 12, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns. Active 227340 63.1 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene nano-electro-mechanical system (GNEMS) based RF receiver
Materials described outside the worked examples.
graphene
MoS₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene membrane resonator radius | 1–50 micron | graphene |
GNEMS device component size (source, drain, gate) | — |
Patent
Atlas literature
Patent
US 9,344,127Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A radio frequency (RF) receiver, comprising: a baseband circuitry comprising: a graphene nano-electro-mechanical (GN EMS) based system including a source, a drain, a gate and a nanoscale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is configured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The RF receiver of claim 1, wherein the GNEMS based system is a baseband filter.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS resonator operates in capacitive transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system operates in transconductance-based transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS based system operates as a transimpedance load.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system receives an active load in casc o de configuration.
The R F receiver of claim 1, wherein the baseband circuitry further comprises a feedback.
The RF receiver of claim 1, wherein the baseband circuitry further comprises a dummy device configured to cancel trans-conductive background noise.
The R F receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry.
The RF receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry and a degenerative GNEMS based system.
The RF receiver of claim 1, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns.
The R F receiver of claim I, wherein the baseband circuitry is configured such that the GNEMS based system acts as active degeneration impedance.
A method for receiving a radio frequency (R F) signal at a system, comprising: receiving a wanted signal and an unwanted signal in a receiver circuitry; passing the wanted signal through a front-end mixer; feeding the wanted signal into a graphene nano-electro-mechanical (G NEMS) based system including a source, a drain, a gate and having a nano-scale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; and wherein the unwanted signal is rejected at the receiving circuitry.
The method of claim 12, wherein the system comprises: a baseband circuitry comprising: Active 22734063. 1 3 Application No.: 14/552,449 Attorney Docket No.: 070050.5396 [[a]] the graphene nano electro mechanical [[(]]GNEMS [[)]] based system including a source, a drain, a gate and [[a]] the nano scale suspended graphene menbranc resonator, the graphene membrane resonator suspended between the-source and the drain; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is con fi gured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The method of claim 12, further comprising feeding the signal through dual path noise cancelling circuitry.
The method of claim 12, further comprising feeding the signal through higher order filter architectures.
The method of claim 12, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns. Active 227340 63.1 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene nano-electro-mechanical system (GNEMS) based RF receiver
Materials described outside the worked examples.
graphene
MoS₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene membrane resonator radius | 1–50 micron | graphene |
GNEMS device component size (source, drain, gate) | — |
Patent
Atlas literature
Patent
US 9,344,127Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A radio frequency (RF) receiver, comprising: a baseband circuitry comprising: a graphene nano-electro-mechanical (GN EMS) based system including a source, a drain, a gate and a nanoscale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is configured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The RF receiver of claim 1, wherein the GNEMS based system is a baseband filter.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS resonator operates in capacitive transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system operates in transconductance-based transduction mode.
The RF receiver of claim 1, wherein the baseband circuitry is configured such that the G NEMS based system operates as a transimpedance load.
The R F receiver of claim 1, wherein the baseband circuitry is configured such that the GNEMS based system receives an active load in casc o de configuration.
The R F receiver of claim 1, wherein the baseband circuitry further comprises a feedback.
The RF receiver of claim 1, wherein the baseband circuitry further comprises a dummy device configured to cancel trans-conductive background noise.
The R F receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry.
The RF receiver of claim 1, wherein the baseband circuitry further comprises capacitive background cancellation circuitry and a degenerative GNEMS based system.
The RF receiver of claim 1, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns.
The R F receiver of claim I, wherein the baseband circuitry is configured such that the GNEMS based system acts as active degeneration impedance.
A method for receiving a radio frequency (R F) signal at a system, comprising: receiving a wanted signal and an unwanted signal in a receiver circuitry; passing the wanted signal through a front-end mixer; feeding the wanted signal into a graphene nano-electro-mechanical (G NEMS) based system including a source, a drain, a gate and having a nano-scale suspended graphene membrane resonator, the graphene membrane resonator suspended between the source and the drain and configured to be resonated by an electro force applied to the gate; and wherein the unwanted signal is rejected at the receiving circuitry.
The method of claim 12, wherein the system comprises: a baseband circuitry comprising: Active 22734063. 1 3 Application No.: 14/552,449 Attorney Docket No.: 070050.5396 [[a]] the graphene nano electro mechanical [[(]]GNEMS [[)]] based system including a source, a drain, a gate and [[a]] the nano scale suspended graphene menbranc resonator, the graphene membrane resonator suspended between the-source and the drain; a receiver circuitry disposed on the baseband and configured to receive an RF signal; and a front-end mixer disposed between the GNEMS based system and the receiver circuitry; wherein the baseband circuitry is con fi gured such that an incoming signal sees frequency selective impedance at the receiver circuitry.
The method of claim 12, further comprising feeding the signal through dual path noise cancelling circuitry.
The method of claim 12, further comprising feeding the signal through higher order filter architectures.
The method of claim 12, wherein the graphene membrane resonator has a radius between about 1 micron and about 50 microns. Active 227340 63.1 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene nano-electro-mechanical system (GNEMS) based RF receiver
Materials described outside the worked examples.
graphene
MoS₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene membrane resonator radius | 1–50 micron | graphene |
GNEMS device component size (source, drain, gate) | — |
GNEMS device footprint (background comparison to FBAR) | — | graphene |
GNEMS resonant frequency tunability | ≤ 400 % | graphene |
GNEMS input power range | — | graphene |
Thickness | 1–50 µm | — |
GNEMS device footprint (background comparison to FBAR) | — | graphene |
GNEMS resonant frequency tunability | ≤ 400 % | graphene |
GNEMS input power range | — | graphene |
Thickness | 1–50 µm | — |
GNEMS device footprint (background comparison to FBAR) | — | graphene |
GNEMS resonant frequency tunability | ≤ 400 % | graphene |
GNEMS input power range | — | graphene |
Thickness | 1–50 µm | — |
GNEMS device footprint (background comparison to FBAR) | — | graphene |
GNEMS resonant frequency tunability | ≤ 400 % | graphene |
GNEMS input power range | — | graphene |
Thickness | 1–50 µm | — |
