Patent
US 10,038,140RERAM USING STACK OF IRON OXIDE AND GRAPHENE OXIDE FILMS
JAE HYUNG JANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,038,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic representation of a resistive switching memory device according to the present disclosure. [0019]
FIG. 2 is a perspective view of a resistive switching memory device according to the present disclosure. ATTY REF.: HANMIR-1044/IP 14120901US/P O 17-002 1 3US …
FIGS. 3a and 3b illustrate operation of a resistive switching memory device ccording to the present disclosure. [0021]
FIGS. 4a, 4b, 4c and 4d show graphs showing current-voltage characteristics of resistive switching memory devices according to the prior art and the present …
FIGS. 5 a and 5 b show graphs showing endurance and retention characteristics for a resistive switching memory device according to the present disclosure. [002 …
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
FIG. 7 is an equivalent circuit diagram of a 1-bit cell 1T-1 R type resistive switching memory device shown in
FIG. 8 is a cross-sectional view showing another example of a 1T-1 R type resistive switching memory device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack bein g confi g ured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the upper electrode, the iron oxide film includin g iron-oxide nanoparticles, and wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The device of claim 1, wherein the stack is formed by spin-coating a solution containing iron-oxides and graphene oxides on the lower electrode and annealing the solution. Original
. Canceled
. Canceled
: The device of claim 21, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y -Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Currently amended
: A method for manufacturing a non-volatile resistive switching memory device, the method comprising: providing a substrate: forming a lower electrode on the substrate; forming a stack of a graphene oxide film and an iron oxide film on the lower electrode using a solution process, wherein the stack acts as a resistance layer for the device; and forming an upper electrode on the stack, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The method of claim 6, wherein the solution process comprises: providing a solution containing graphene oxides and iron oxides; spin-coating the solution on the lower electrode; and annealing the solution spin-coated on the lower electrode. Original
: The method of claim 6, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y-Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Original
. Canceled
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack being configured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the oxide nanoparticles, and wherein a resistance value voltage applied to the upper electrode, and wherein level is applied to the upper electrode, the iron oxide to a state in which non-conductive y-Fe 2 0 filaments are removed therein. New upper electrode, the iron oxide film including iron-of the resistance layer varies based on a when a positive voltage with a predetermined oxide film is changed via oxidation of the iron 3 ions are rich therein, and, thus, conductive
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile resistive switching memory device (ReRAM)
Materials described outside the worked examples.
graphene oxide film
iron oxide film
Fe₃O₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–6 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,038,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic representation of a resistive switching memory device according to the present disclosure. [0019]
FIG. 2 is a perspective view of a resistive switching memory device according to the present disclosure. ATTY REF.: HANMIR-1044/IP 14120901US/P O 17-002 1 3US …
FIGS. 3a and 3b illustrate operation of a resistive switching memory device ccording to the present disclosure. [0021]
FIGS. 4a, 4b, 4c and 4d show graphs showing current-voltage characteristics of resistive switching memory devices according to the prior art and the present …
FIGS. 5 a and 5 b show graphs showing endurance and retention characteristics for a resistive switching memory device according to the present disclosure. [002 …
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
FIG. 7 is an equivalent circuit diagram of a 1-bit cell 1T-1 R type resistive switching memory device shown in
FIG. 8 is a cross-sectional view showing another example of a 1T-1 R type resistive switching memory device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack bein g confi g ured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the upper electrode, the iron oxide film includin g iron-oxide nanoparticles, and wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The device of claim 1, wherein the stack is formed by spin-coating a solution containing iron-oxides and graphene oxides on the lower electrode and annealing the solution. Original
. Canceled
. Canceled
: The device of claim 21, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y -Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Currently amended
: A method for manufacturing a non-volatile resistive switching memory device, the method comprising: providing a substrate: forming a lower electrode on the substrate; forming a stack of a graphene oxide film and an iron oxide film on the lower electrode using a solution process, wherein the stack acts as a resistance layer for the device; and forming an upper electrode on the stack, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The method of claim 6, wherein the solution process comprises: providing a solution containing graphene oxides and iron oxides; spin-coating the solution on the lower electrode; and annealing the solution spin-coated on the lower electrode. Original
: The method of claim 6, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y-Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Original
. Canceled
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack being configured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the oxide nanoparticles, and wherein a resistance value voltage applied to the upper electrode, and wherein level is applied to the upper electrode, the iron oxide to a state in which non-conductive y-Fe 2 0 filaments are removed therein. New upper electrode, the iron oxide film including iron-of the resistance layer varies based on a when a positive voltage with a predetermined oxide film is changed via oxidation of the iron 3 ions are rich therein, and, thus, conductive
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile resistive switching memory device (ReRAM)
Materials described outside the worked examples.
graphene oxide film
iron oxide film
Fe₃O₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–6 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,038,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic representation of a resistive switching memory device according to the present disclosure. [0019]
FIG. 2 is a perspective view of a resistive switching memory device according to the present disclosure. ATTY REF.: HANMIR-1044/IP 14120901US/P O 17-002 1 3US …
FIGS. 3a and 3b illustrate operation of a resistive switching memory device ccording to the present disclosure. [0021]
FIGS. 4a, 4b, 4c and 4d show graphs showing current-voltage characteristics of resistive switching memory devices according to the prior art and the present …
FIGS. 5 a and 5 b show graphs showing endurance and retention characteristics for a resistive switching memory device according to the present disclosure. [002 …
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
FIG. 7 is an equivalent circuit diagram of a 1-bit cell 1T-1 R type resistive switching memory device shown in
FIG. 8 is a cross-sectional view showing another example of a 1T-1 R type resistive switching memory device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack bein g confi g ured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the upper electrode, the iron oxide film includin g iron-oxide nanoparticles, and wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The device of claim 1, wherein the stack is formed by spin-coating a solution containing iron-oxides and graphene oxides on the lower electrode and annealing the solution. Original
. Canceled
. Canceled
: The device of claim 21, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y -Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Currently amended
: A method for manufacturing a non-volatile resistive switching memory device, the method comprising: providing a substrate: forming a lower electrode on the substrate; forming a stack of a graphene oxide film and an iron oxide film on the lower electrode using a solution process, wherein the stack acts as a resistance layer for the device; and forming an upper electrode on the stack, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The method of claim 6, wherein the solution process comprises: providing a solution containing graphene oxides and iron oxides; spin-coating the solution on the lower electrode; and annealing the solution spin-coated on the lower electrode. Original
: The method of claim 6, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y-Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Original
. Canceled
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack being configured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the oxide nanoparticles, and wherein a resistance value voltage applied to the upper electrode, and wherein level is applied to the upper electrode, the iron oxide to a state in which non-conductive y-Fe 2 0 filaments are removed therein. New upper electrode, the iron oxide film including iron-of the resistance layer varies based on a when a positive voltage with a predetermined oxide film is changed via oxidation of the iron 3 ions are rich therein, and, thus, conductive
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile resistive switching memory device (ReRAM)
Materials described outside the worked examples.
graphene oxide film
iron oxide film
Fe₃O₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–6 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,038,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic representation of a resistive switching memory device according to the present disclosure. [0019]
FIG. 2 is a perspective view of a resistive switching memory device according to the present disclosure. ATTY REF.: HANMIR-1044/IP 14120901US/P O 17-002 1 3US …
FIGS. 3a and 3b illustrate operation of a resistive switching memory device ccording to the present disclosure. [0021]
FIGS. 4a, 4b, 4c and 4d show graphs showing current-voltage characteristics of resistive switching memory devices according to the prior art and the present …
FIGS. 5 a and 5 b show graphs showing endurance and retention characteristics for a resistive switching memory device according to the present disclosure. [002 …
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
FIG. 7 is an equivalent circuit diagram of a 1-bit cell 1T-1 R type resistive switching memory device shown in
FIG. 8 is a cross-sectional view showing another example of a 1T-1 R type resistive switching memory device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack bein g confi g ured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the upper electrode, the iron oxide film includin g iron-oxide nanoparticles, and wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The device of claim 1, wherein the stack is formed by spin-coating a solution containing iron-oxides and graphene oxides on the lower electrode and annealing the solution. Original
. Canceled
. Canceled
: The device of claim 21, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y -Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Currently amended
: A method for manufacturing a non-volatile resistive switching memory device, the method comprising: providing a substrate: forming a lower electrode on the substrate; forming a stack of a graphene oxide film and an iron oxide film on the lower electrode using a solution process, wherein the stack acts as a resistance layer for the device; and forming an upper electrode on the stack, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode, and wherein when a ne g ative volta g e with a predetermined level is applied to the upper electrode, the iron oxide film is chan g ed via oxidation of the iron oxide to a state in which conductive Fe₃ 0 4 ions are rich therein, and, thus, conductive filaments are formed therein. Currently amended
: The method of claim 6, wherein the solution process comprises: providing a solution containing graphene oxides and iron oxides; spin-coating the solution on the lower electrode; and annealing the solution spin-coated on the lower electrode. Original
: The method of claim 6, wherein when a positive voltage with a predetermined level is applied to the upper electrode, the iron oxide film is changed via oxidation of the iron oxide to a state in which non-conductive y-Fe 2 0 3 ions are rich therein, and, thus, conductive filaments are removed therein. Original
. Canceled
: A non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, the stack being configured such that the graphene oxide film contacts the lower electrode, and the iron oxide film contacts the oxide nanoparticles, and wherein a resistance value voltage applied to the upper electrode, and wherein level is applied to the upper electrode, the iron oxide to a state in which non-conductive y-Fe 2 0 filaments are removed therein. New upper electrode, the iron oxide film including iron-of the resistance layer varies based on a when a positive voltage with a predetermined oxide film is changed via oxidation of the iron 3 ions are rich therein, and, thus, conductive
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile resistive switching memory device (ReRAM)
Materials described outside the worked examples.
graphene oxide film
iron oxide film
Fe₃O₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a diagram illustrating a 1 T-1 R type memory device implemented by coupling a resistive switching memory device according to the present disclosure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–6 nm | — |
Thickness |
gamma-Fe₂O₃
γ-Fe₂O₃
iron-oxide nanoparticles
| 10–15 nm |
| — |
gamma-Fe₂O₃
γ-Fe₂O₃
iron-oxide nanoparticles
| 10–15 nm |
| — |
gamma-Fe₂O₃
γ-Fe₂O₃
iron-oxide nanoparticles
| 10–15 nm |
| — |
gamma-Fe₂O₃
γ-Fe₂O₃
iron-oxide nanoparticles
| 10–15 nm |
| — |