Patent
US 10,676,362ROLL-SHAPED AND CONTINUOUS GRAPHENE FILM AND MANUFACTURING METHOD THEREFOR
Ping LIU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,676,362Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flowchart of a method for manufacturing a roll-shaped and continuous graphene film according to Embodiment 1 of the present application;
FIG. 2 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Embodiment 1 of the present …
FIG. 3 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 1 of the …
FIG. 4 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 2 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a roll-shaped and continuous graphene film, comprising: Sl[[.]]: performing corona treatment on a pol v imide (PI S film to obtain a corona P I film, and then coiling the corona P I film into a coiled material to be winded into a clamp with a heater; S2[[.]]: placing the coiled material shaped in step S 1 on a flowing conveyor belt to enter a carbonization area, heating the coiled material by the heater under protection of an inert gas, and carbonizing the coiled material at a first temperature to deintercalate H, O, and N atoms, so as to form a microcrystalline carbon precursor; and S3[[.]]: placing the microcrystalline carbon precursor obtained in step S₂ on the flowing conveyor belt to enter a graphitization area, heating the microcrystalline carbon precursor by the heater under [[the]] protection of the inert gas, and graphitizing the microcr y stalline carbon precursor at a second temperature, so as to form a graphene film, wherein, in step S2,, a central axis of the coiled material is perpendicular to a movement direction of the flowing conveyor belt, and the coiled material is horizontally placed and circularly rolls 360 around the central axis thereof [[.]], in step S3, a central axis of the microcr y stalline carbon precursor is perpendicular to a movement direction of the flowing conveyor belt, and the microcrystalline carbon precursor is horizontally placed and circularly rolls 360 0 around the central axis thereof. Currently amended
The manufacturing method according to claim 1, wherein the P I film has a thickness in a range of i 6-75 m, a [[the]] length [[is]] in a range of 300-1000 m, and [[the]] a width [[is]] in a range of 5.4-800 mm. Currently amended
The manufacturing method according to claim 1, wherein the corona treatment in step S i [[is]] includes introducing the P I film into plasma through voltage surge[[;]], and the corona P I film has a [[the]] flatness less than or equal to 10 nm[[,]] and [[the]] a coarseness [[is]] greater than or equal to 2 nm. Currently amended
The manufacturing method according to claim 1, wherein the heater is made of a material including a carbon material or a graphite material, and has a core body [[is]] being [[of]] an elongated circular shape; and the heater is provided with a temperature control unit and a speed control unit for gradual heating or cooling in the carbonizing and graphitizing of step S₂ and S3. Currently amended
The manufacturing method according to claim 1, wherein the first temperature is in a range of 500-3300 0 C, [[and]] the heater performs a g radual heating in the carbonizing of the coiled material, i -s and the first temperature includes: a temperature of deintercalating [[the]] H atoms in a range of 900-1100 0 C[[,]]; a temperature of deintercalating [[the]] O atoms in a range of 1800-2200 0 C[[,]]; and a temperature of deintercalating [[the]] N atoms in a range of 2700-3300 ° C[[;]], and the microcrystalline carbon precursor is generated at a speed of 1-2 mm/s. Currently amended
The manufacturing method according to claim 1, wherein the second temperature is in a range of 1500-3200 0 C, and the heater performs a g radual heating in the graphitizing of the microcr y stalline carbon precursor, and the second temperature includes: a temperature at a first stage [[is]] in a range of 1500-2000 0 C[[,]]; a temperature at a second stage [[is]] in a range of 2000-2800 ° C[[,]]; and a temperature at a third stage [[is]] in a range of 2800-3200 ° C[[;]], and the graphene film is generated at a speed of 0.55-1.5 mm/s. Currently amended
The manufacturing method according to claim 1, wherein a nano metal material is doped in step S₂ and/or step S3, so as to form quantum dots in the graphene. Original
The manufacturing method according to claim 1, wherein the inert gas comprises one or more of helium, nitrogen, argon, and neon, and has a pressure of 1-1.8 kgf/cm 2. Original
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials3 process steps
A polyimide film (DPI50, 50 μm thick, 500 m long, 500 mm wide) from Danbond Technology Co., Ltd. is introduced into plasma through voltage surge for corona treatment, yielding a corona PI film with flatness 5 nm and coarseness 5 nm. The corona PI film is coiled into a coiled material wound into a clamp with a carbon-material heater. The coiled material is placed on a flowing conveyor belt into a carbonization area; the heater heats from 500°C under nitrogen at 1.5 kgf/cm² pressure, deintercalating H at 1000°C, O at 2000°C, and N at 3000°C, generating microcrystalline carbon precursor at 1.5 mm/s; cooling at 5–10°C/min, completed in 2 hours. The carbon precursor is then placed into a graphitization area and heated under nitrogen at 1.5 kgf/cm² through three temperature stages: 1800°C, 2500°C, and 3000°C, generating a graphene film at 1.0 mm/s. Throughout, the coiled material central axis is perpendicular to conveyor belt movement direction and rolls 360° around its axis.
Materials described outside the worked examples.
polyimide (PI) film
nano metal material dopant
quantum dots in graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Flatness | 5 nm | corona PI film |
Patent
Atlas literature
Patent
US 10,676,362Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flowchart of a method for manufacturing a roll-shaped and continuous graphene film according to Embodiment 1 of the present application;
FIG. 2 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Embodiment 1 of the present …
FIG. 3 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 1 of the …
FIG. 4 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 2 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a roll-shaped and continuous graphene film, comprising: Sl[[.]]: performing corona treatment on a pol v imide (PI S film to obtain a corona P I film, and then coiling the corona P I film into a coiled material to be winded into a clamp with a heater; S2[[.]]: placing the coiled material shaped in step S 1 on a flowing conveyor belt to enter a carbonization area, heating the coiled material by the heater under protection of an inert gas, and carbonizing the coiled material at a first temperature to deintercalate H, O, and N atoms, so as to form a microcrystalline carbon precursor; and S3[[.]]: placing the microcrystalline carbon precursor obtained in step S₂ on the flowing conveyor belt to enter a graphitization area, heating the microcrystalline carbon precursor by the heater under [[the]] protection of the inert gas, and graphitizing the microcr y stalline carbon precursor at a second temperature, so as to form a graphene film, wherein, in step S2,, a central axis of the coiled material is perpendicular to a movement direction of the flowing conveyor belt, and the coiled material is horizontally placed and circularly rolls 360 around the central axis thereof [[.]], in step S3, a central axis of the microcr y stalline carbon precursor is perpendicular to a movement direction of the flowing conveyor belt, and the microcrystalline carbon precursor is horizontally placed and circularly rolls 360 0 around the central axis thereof. Currently amended
The manufacturing method according to claim 1, wherein the P I film has a thickness in a range of i 6-75 m, a [[the]] length [[is]] in a range of 300-1000 m, and [[the]] a width [[is]] in a range of 5.4-800 mm. Currently amended
The manufacturing method according to claim 1, wherein the corona treatment in step S i [[is]] includes introducing the P I film into plasma through voltage surge[[;]], and the corona P I film has a [[the]] flatness less than or equal to 10 nm[[,]] and [[the]] a coarseness [[is]] greater than or equal to 2 nm. Currently amended
The manufacturing method according to claim 1, wherein the heater is made of a material including a carbon material or a graphite material, and has a core body [[is]] being [[of]] an elongated circular shape; and the heater is provided with a temperature control unit and a speed control unit for gradual heating or cooling in the carbonizing and graphitizing of step S₂ and S3. Currently amended
The manufacturing method according to claim 1, wherein the first temperature is in a range of 500-3300 0 C, [[and]] the heater performs a g radual heating in the carbonizing of the coiled material, i -s and the first temperature includes: a temperature of deintercalating [[the]] H atoms in a range of 900-1100 0 C[[,]]; a temperature of deintercalating [[the]] O atoms in a range of 1800-2200 0 C[[,]]; and a temperature of deintercalating [[the]] N atoms in a range of 2700-3300 ° C[[;]], and the microcrystalline carbon precursor is generated at a speed of 1-2 mm/s. Currently amended
The manufacturing method according to claim 1, wherein the second temperature is in a range of 1500-3200 0 C, and the heater performs a g radual heating in the graphitizing of the microcr y stalline carbon precursor, and the second temperature includes: a temperature at a first stage [[is]] in a range of 1500-2000 0 C[[,]]; a temperature at a second stage [[is]] in a range of 2000-2800 ° C[[,]]; and a temperature at a third stage [[is]] in a range of 2800-3200 ° C[[;]], and the graphene film is generated at a speed of 0.55-1.5 mm/s. Currently amended
The manufacturing method according to claim 1, wherein a nano metal material is doped in step S₂ and/or step S3, so as to form quantum dots in the graphene. Original
The manufacturing method according to claim 1, wherein the inert gas comprises one or more of helium, nitrogen, argon, and neon, and has a pressure of 1-1.8 kgf/cm 2. Original
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials3 process steps
A polyimide film (DPI50, 50 μm thick, 500 m long, 500 mm wide) from Danbond Technology Co., Ltd. is introduced into plasma through voltage surge for corona treatment, yielding a corona PI film with flatness 5 nm and coarseness 5 nm. The corona PI film is coiled into a coiled material wound into a clamp with a carbon-material heater. The coiled material is placed on a flowing conveyor belt into a carbonization area; the heater heats from 500°C under nitrogen at 1.5 kgf/cm² pressure, deintercalating H at 1000°C, O at 2000°C, and N at 3000°C, generating microcrystalline carbon precursor at 1.5 mm/s; cooling at 5–10°C/min, completed in 2 hours. The carbon precursor is then placed into a graphitization area and heated under nitrogen at 1.5 kgf/cm² through three temperature stages: 1800°C, 2500°C, and 3000°C, generating a graphene film at 1.0 mm/s. Throughout, the coiled material central axis is perpendicular to conveyor belt movement direction and rolls 360° around its axis.
Materials described outside the worked examples.
polyimide (PI) film
nano metal material dopant
quantum dots in graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Flatness | 5 nm | corona PI film |
Patent
Atlas literature
Patent
US 10,676,362Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flowchart of a method for manufacturing a roll-shaped and continuous graphene film according to Embodiment 1 of the present application;
FIG. 2 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Embodiment 1 of the present …
FIG. 3 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 1 of the …
FIG. 4 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 2 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a roll-shaped and continuous graphene film, comprising: Sl[[.]]: performing corona treatment on a pol v imide (PI S film to obtain a corona P I film, and then coiling the corona P I film into a coiled material to be winded into a clamp with a heater; S2[[.]]: placing the coiled material shaped in step S 1 on a flowing conveyor belt to enter a carbonization area, heating the coiled material by the heater under protection of an inert gas, and carbonizing the coiled material at a first temperature to deintercalate H, O, and N atoms, so as to form a microcrystalline carbon precursor; and S3[[.]]: placing the microcrystalline carbon precursor obtained in step S₂ on the flowing conveyor belt to enter a graphitization area, heating the microcrystalline carbon precursor by the heater under [[the]] protection of the inert gas, and graphitizing the microcr y stalline carbon precursor at a second temperature, so as to form a graphene film, wherein, in step S2,, a central axis of the coiled material is perpendicular to a movement direction of the flowing conveyor belt, and the coiled material is horizontally placed and circularly rolls 360 around the central axis thereof [[.]], in step S3, a central axis of the microcr y stalline carbon precursor is perpendicular to a movement direction of the flowing conveyor belt, and the microcrystalline carbon precursor is horizontally placed and circularly rolls 360 0 around the central axis thereof. Currently amended
The manufacturing method according to claim 1, wherein the P I film has a thickness in a range of i 6-75 m, a [[the]] length [[is]] in a range of 300-1000 m, and [[the]] a width [[is]] in a range of 5.4-800 mm. Currently amended
The manufacturing method according to claim 1, wherein the corona treatment in step S i [[is]] includes introducing the P I film into plasma through voltage surge[[;]], and the corona P I film has a [[the]] flatness less than or equal to 10 nm[[,]] and [[the]] a coarseness [[is]] greater than or equal to 2 nm. Currently amended
The manufacturing method according to claim 1, wherein the heater is made of a material including a carbon material or a graphite material, and has a core body [[is]] being [[of]] an elongated circular shape; and the heater is provided with a temperature control unit and a speed control unit for gradual heating or cooling in the carbonizing and graphitizing of step S₂ and S3. Currently amended
The manufacturing method according to claim 1, wherein the first temperature is in a range of 500-3300 0 C, [[and]] the heater performs a g radual heating in the carbonizing of the coiled material, i -s and the first temperature includes: a temperature of deintercalating [[the]] H atoms in a range of 900-1100 0 C[[,]]; a temperature of deintercalating [[the]] O atoms in a range of 1800-2200 0 C[[,]]; and a temperature of deintercalating [[the]] N atoms in a range of 2700-3300 ° C[[;]], and the microcrystalline carbon precursor is generated at a speed of 1-2 mm/s. Currently amended
The manufacturing method according to claim 1, wherein the second temperature is in a range of 1500-3200 0 C, and the heater performs a g radual heating in the graphitizing of the microcr y stalline carbon precursor, and the second temperature includes: a temperature at a first stage [[is]] in a range of 1500-2000 0 C[[,]]; a temperature at a second stage [[is]] in a range of 2000-2800 ° C[[,]]; and a temperature at a third stage [[is]] in a range of 2800-3200 ° C[[;]], and the graphene film is generated at a speed of 0.55-1.5 mm/s. Currently amended
The manufacturing method according to claim 1, wherein a nano metal material is doped in step S₂ and/or step S3, so as to form quantum dots in the graphene. Original
The manufacturing method according to claim 1, wherein the inert gas comprises one or more of helium, nitrogen, argon, and neon, and has a pressure of 1-1.8 kgf/cm 2. Original
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials3 process steps
A polyimide film (DPI50, 50 μm thick, 500 m long, 500 mm wide) from Danbond Technology Co., Ltd. is introduced into plasma through voltage surge for corona treatment, yielding a corona PI film with flatness 5 nm and coarseness 5 nm. The corona PI film is coiled into a coiled material wound into a clamp with a carbon-material heater. The coiled material is placed on a flowing conveyor belt into a carbonization area; the heater heats from 500°C under nitrogen at 1.5 kgf/cm² pressure, deintercalating H at 1000°C, O at 2000°C, and N at 3000°C, generating microcrystalline carbon precursor at 1.5 mm/s; cooling at 5–10°C/min, completed in 2 hours. The carbon precursor is then placed into a graphitization area and heated under nitrogen at 1.5 kgf/cm² through three temperature stages: 1800°C, 2500°C, and 3000°C, generating a graphene film at 1.0 mm/s. Throughout, the coiled material central axis is perpendicular to conveyor belt movement direction and rolls 360° around its axis.
Materials described outside the worked examples.
polyimide (PI) film
nano metal material dopant
quantum dots in graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Flatness | 5 nm | corona PI film |
Patent
Atlas literature
Patent
US 10,676,362Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flowchart of a method for manufacturing a roll-shaped and continuous graphene film according to Embodiment 1 of the present application;
FIG. 2 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Embodiment 1 of the present …
FIG. 3 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 1 of the …
FIG. 4 is a schematic diagram of a manner of placing a coiled material in carbonization and graphitization processes according to Comparative example 2 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a roll-shaped and continuous graphene film, comprising: Sl[[.]]: performing corona treatment on a pol v imide (PI S film to obtain a corona P I film, and then coiling the corona P I film into a coiled material to be winded into a clamp with a heater; S2[[.]]: placing the coiled material shaped in step S 1 on a flowing conveyor belt to enter a carbonization area, heating the coiled material by the heater under protection of an inert gas, and carbonizing the coiled material at a first temperature to deintercalate H, O, and N atoms, so as to form a microcrystalline carbon precursor; and S3[[.]]: placing the microcrystalline carbon precursor obtained in step S₂ on the flowing conveyor belt to enter a graphitization area, heating the microcrystalline carbon precursor by the heater under [[the]] protection of the inert gas, and graphitizing the microcr y stalline carbon precursor at a second temperature, so as to form a graphene film, wherein, in step S2,, a central axis of the coiled material is perpendicular to a movement direction of the flowing conveyor belt, and the coiled material is horizontally placed and circularly rolls 360 around the central axis thereof [[.]], in step S3, a central axis of the microcr y stalline carbon precursor is perpendicular to a movement direction of the flowing conveyor belt, and the microcrystalline carbon precursor is horizontally placed and circularly rolls 360 0 around the central axis thereof. Currently amended
The manufacturing method according to claim 1, wherein the P I film has a thickness in a range of i 6-75 m, a [[the]] length [[is]] in a range of 300-1000 m, and [[the]] a width [[is]] in a range of 5.4-800 mm. Currently amended
The manufacturing method according to claim 1, wherein the corona treatment in step S i [[is]] includes introducing the P I film into plasma through voltage surge[[;]], and the corona P I film has a [[the]] flatness less than or equal to 10 nm[[,]] and [[the]] a coarseness [[is]] greater than or equal to 2 nm. Currently amended
The manufacturing method according to claim 1, wherein the heater is made of a material including a carbon material or a graphite material, and has a core body [[is]] being [[of]] an elongated circular shape; and the heater is provided with a temperature control unit and a speed control unit for gradual heating or cooling in the carbonizing and graphitizing of step S₂ and S3. Currently amended
The manufacturing method according to claim 1, wherein the first temperature is in a range of 500-3300 0 C, [[and]] the heater performs a g radual heating in the carbonizing of the coiled material, i -s and the first temperature includes: a temperature of deintercalating [[the]] H atoms in a range of 900-1100 0 C[[,]]; a temperature of deintercalating [[the]] O atoms in a range of 1800-2200 0 C[[,]]; and a temperature of deintercalating [[the]] N atoms in a range of 2700-3300 ° C[[;]], and the microcrystalline carbon precursor is generated at a speed of 1-2 mm/s. Currently amended
The manufacturing method according to claim 1, wherein the second temperature is in a range of 1500-3200 0 C, and the heater performs a g radual heating in the graphitizing of the microcr y stalline carbon precursor, and the second temperature includes: a temperature at a first stage [[is]] in a range of 1500-2000 0 C[[,]]; a temperature at a second stage [[is]] in a range of 2000-2800 ° C[[,]]; and a temperature at a third stage [[is]] in a range of 2800-3200 ° C[[;]], and the graphene film is generated at a speed of 0.55-1.5 mm/s. Currently amended
The manufacturing method according to claim 1, wherein a nano metal material is doped in step S₂ and/or step S3, so as to form quantum dots in the graphene. Original
The manufacturing method according to claim 1, wherein the inert gas comprises one or more of helium, nitrogen, argon, and neon, and has a pressure of 1-1.8 kgf/cm 2. Original
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials3 process steps
A polyimide film (DPI50, 50 μm thick, 500 m long, 500 mm wide) from Danbond Technology Co., Ltd. is introduced into plasma through voltage surge for corona treatment, yielding a corona PI film with flatness 5 nm and coarseness 5 nm. The corona PI film is coiled into a coiled material wound into a clamp with a carbon-material heater. The coiled material is placed on a flowing conveyor belt into a carbonization area; the heater heats from 500°C under nitrogen at 1.5 kgf/cm² pressure, deintercalating H at 1000°C, O at 2000°C, and N at 3000°C, generating microcrystalline carbon precursor at 1.5 mm/s; cooling at 5–10°C/min, completed in 2 hours. The carbon precursor is then placed into a graphitization area and heated under nitrogen at 1.5 kgf/cm² through three temperature stages: 1800°C, 2500°C, and 3000°C, generating a graphene film at 1.0 mm/s. Throughout, the coiled material central axis is perpendicular to conveyor belt movement direction and rolls 360° around its axis.
Materials described outside the worked examples.
polyimide (PI) film
nano metal material dopant
quantum dots in graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Flatness | 5 nm | corona PI film |
inert gas
| 5 nm |
corona PI film |
Surface Flatness Claim Range | — | corona PI film |
Surface Coarseness Claim Range | — | corona PI film |
Temperature | 5–10 °C | — |
— | 1.3–1.4 ev | — |
Thickness | 5.4–800 mm | — |
Temperature | 2700–3300 °C | — |
Thickness | 1–2 mm | — |
Temperature | 2000–2800 °C | — |
Temperature | 2800–3200 °C | — |
Thickness | 0.55–1.5 mm | — |
Thickness | 2–5 nm | — |
Temperature | 500–3300 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1800–2200 °C | — |
Temperature | 1500–3200 °C | — |
Temperature | 1500–2000 °C | — |
inert gas
| 5 nm |
corona PI film |
Surface Flatness Claim Range | — | corona PI film |
Surface Coarseness Claim Range | — | corona PI film |
Temperature | 5–10 °C | — |
— | 1.3–1.4 ev | — |
Thickness | 5.4–800 mm | — |
Temperature | 2700–3300 °C | — |
Thickness | 1–2 mm | — |
Temperature | 2000–2800 °C | — |
Temperature | 2800–3200 °C | — |
Thickness | 0.55–1.5 mm | — |
Thickness | 2–5 nm | — |
Temperature | 500–3300 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1800–2200 °C | — |
Temperature | 1500–3200 °C | — |
Temperature | 1500–2000 °C | — |
inert gas
| 5 nm |
corona PI film |
Surface Flatness Claim Range | — | corona PI film |
Surface Coarseness Claim Range | — | corona PI film |
Temperature | 5–10 °C | — |
— | 1.3–1.4 ev | — |
Thickness | 5.4–800 mm | — |
Temperature | 2700–3300 °C | — |
Thickness | 1–2 mm | — |
Temperature | 2000–2800 °C | — |
Temperature | 2800–3200 °C | — |
Thickness | 0.55–1.5 mm | — |
Thickness | 2–5 nm | — |
Temperature | 500–3300 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1800–2200 °C | — |
Temperature | 1500–3200 °C | — |
Temperature | 1500–2000 °C | — |
inert gas
| 5 nm |
corona PI film |
Surface Flatness Claim Range | — | corona PI film |
Surface Coarseness Claim Range | — | corona PI film |
Temperature | 5–10 °C | — |
— | 1.3–1.4 ev | — |
Thickness | 5.4–800 mm | — |
Temperature | 2700–3300 °C | — |
Thickness | 1–2 mm | — |
Temperature | 2000–2800 °C | — |
Temperature | 2800–3200 °C | — |
Thickness | 0.55–1.5 mm | — |
Thickness | 2–5 nm | — |
Temperature | 500–3300 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1800–2200 °C | — |
Temperature | 1500–3200 °C | — |
Temperature | 1500–2000 °C | — |