Patent
US 10,396,160Semiconductor structure having multiple-porous graphene layers and the fabrication method thereof
Chao-Sung LAI
US
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Atlas literature
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US 10,396,160Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the cross-sectional diagram for a semiconductor structure having a multi-layer porous graphene film of the present inventi on;
Figure 2 illustrates the fl o w diagram f o r the fabrication 5 method for forming the semiconductor structure having a multi-layer porous graphene film of an embodiment of the present inventi on; and
Figure 3 illustrates the X-ray diffraction result of the present inventi o n, which shows that the fabrication method of f o rming a porous graphene buffer film yields x-ray diffraction results that match th os e of a conventional structure without the graphene buffer layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure having a single-layer porous graphene film with a thickness of about 0.34 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; wherein said single-layer porous graphene film having the thickness of about 0.34 nm is provided on said sapphire substrate, said single-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 ° C to 1 100 ° C via passing through methane (CH 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said single-layer porous graphene film, said gallium nitride being deposited on said single-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 °C to 1100 °C. Currently amended
Canceled
Canceled
A semiconductor structure having a two-layer porous graphene film with a thickness of about 0.7 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said two-layer porous graphene film having the thickness of about 0.7 nm is provided on said sapphire substrate, said two-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said two-layer porous graphene film, said gallium nitride being deposited on said two-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 0 C to 1100 0 C. Currently amended
A semiconductor structure having a three-layer porous graphene film with a thickness of about 1 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said three-layer porous graphene film having the thickness of about 1 nm is provided on said sapphire substrate, said three-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said three-layer porous graphene film, said gallium nitride being deposited on said three-layer porous graphene film and said sapphire substrate by using the
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with single-layer porous graphene buffer
semiconductor structure with two-layer porous graphene buffer
Materials described outside the worked examples.
single-layer porous graphene film
C
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,396,160Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the cross-sectional diagram for a semiconductor structure having a multi-layer porous graphene film of the present inventi on;
Figure 2 illustrates the fl o w diagram f o r the fabrication 5 method for forming the semiconductor structure having a multi-layer porous graphene film of an embodiment of the present inventi on; and
Figure 3 illustrates the X-ray diffraction result of the present inventi o n, which shows that the fabrication method of f o rming a porous graphene buffer film yields x-ray diffraction results that match th os e of a conventional structure without the graphene buffer layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure having a single-layer porous graphene film with a thickness of about 0.34 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; wherein said single-layer porous graphene film having the thickness of about 0.34 nm is provided on said sapphire substrate, said single-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 ° C to 1 100 ° C via passing through methane (CH 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said single-layer porous graphene film, said gallium nitride being deposited on said single-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 °C to 1100 °C. Currently amended
Canceled
Canceled
A semiconductor structure having a two-layer porous graphene film with a thickness of about 0.7 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said two-layer porous graphene film having the thickness of about 0.7 nm is provided on said sapphire substrate, said two-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said two-layer porous graphene film, said gallium nitride being deposited on said two-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 0 C to 1100 0 C. Currently amended
A semiconductor structure having a three-layer porous graphene film with a thickness of about 1 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said three-layer porous graphene film having the thickness of about 1 nm is provided on said sapphire substrate, said three-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said three-layer porous graphene film, said gallium nitride being deposited on said three-layer porous graphene film and said sapphire substrate by using the
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with single-layer porous graphene buffer
semiconductor structure with two-layer porous graphene buffer
Materials described outside the worked examples.
single-layer porous graphene film
C
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,396,160Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the cross-sectional diagram for a semiconductor structure having a multi-layer porous graphene film of the present inventi on;
Figure 2 illustrates the fl o w diagram f o r the fabrication 5 method for forming the semiconductor structure having a multi-layer porous graphene film of an embodiment of the present inventi on; and
Figure 3 illustrates the X-ray diffraction result of the present inventi o n, which shows that the fabrication method of f o rming a porous graphene buffer film yields x-ray diffraction results that match th os e of a conventional structure without the graphene buffer layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure having a single-layer porous graphene film with a thickness of about 0.34 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; wherein said single-layer porous graphene film having the thickness of about 0.34 nm is provided on said sapphire substrate, said single-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 ° C to 1 100 ° C via passing through methane (CH 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said single-layer porous graphene film, said gallium nitride being deposited on said single-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 °C to 1100 °C. Currently amended
Canceled
Canceled
A semiconductor structure having a two-layer porous graphene film with a thickness of about 0.7 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said two-layer porous graphene film having the thickness of about 0.7 nm is provided on said sapphire substrate, said two-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said two-layer porous graphene film, said gallium nitride being deposited on said two-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 0 C to 1100 0 C. Currently amended
A semiconductor structure having a three-layer porous graphene film with a thickness of about 1 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said three-layer porous graphene film having the thickness of about 1 nm is provided on said sapphire substrate, said three-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said three-layer porous graphene film, said gallium nitride being deposited on said three-layer porous graphene film and said sapphire substrate by using the
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with single-layer porous graphene buffer
semiconductor structure with two-layer porous graphene buffer
Materials described outside the worked examples.
single-layer porous graphene film
C
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,396,160Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates the cross-sectional diagram for a semiconductor structure having a multi-layer porous graphene film of the present inventi on;
Figure 2 illustrates the fl o w diagram f o r the fabrication 5 method for forming the semiconductor structure having a multi-layer porous graphene film of an embodiment of the present inventi on; and
Figure 3 illustrates the X-ray diffraction result of the present inventi o n, which shows that the fabrication method of f o rming a porous graphene buffer film yields x-ray diffraction results that match th os e of a conventional structure without the graphene buffer layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure having a single-layer porous graphene film with a thickness of about 0.34 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; wherein said single-layer porous graphene film having the thickness of about 0.34 nm is provided on said sapphire substrate, said single-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 ° C to 1 100 ° C via passing through methane (CH 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said single-layer porous graphene film, said gallium nitride being deposited on said single-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 °C to 1100 °C. Currently amended
Canceled
Canceled
A semiconductor structure having a two-layer porous graphene film with a thickness of about 0.7 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said two-layer porous graphene film having the thickness of about 0.7 nm is provided on said sapphire substrate, said two-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said two-layer porous graphene film, said gallium nitride being deposited on said two-layer porous graphene film and said sapphire substrate by using the metalorganic chemical vapor deposition (MOCVD) at 900 0 C to 1100 0 C. Currently amended
A semiconductor structure having a three-layer porous graphene film with a thickness of about 1 nm, formed by a low pressure chemical vapor deposition (LPCVD) and a metalorganic chemical vapor deposition (MOCVD), comprising: a sapphire substrate; said three-layer porous graphene film having the thickness of about 1 nm is provided on said sapphire substrate, said three-layer porous graphene film being formed on a metal foil by the low pressure chemical vapor deposition (LPCVD) at 900 0 C to 1100 0 C via passing through methane (C H 4) and hydrogen (H 2), wherein said metal foil is selected from a group consisting of a Cu foil or Ni foil; and wherein a gallium nitride layer is formed on said three-layer porous graphene film, said gallium nitride being deposited on said three-layer porous graphene film and said sapphire substrate by using the
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with single-layer porous graphene buffer
semiconductor structure with two-layer porous graphene buffer
Materials described outside the worked examples.
single-layer porous graphene film
C
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
semiconductor structure with three-layer porous graphene buffer
gallium nitride
GaN
metal foil (Cu foil or Ni foil)
methane
CH₄
hydrogen
H₂
ferric chloride
FeCl₃
Poly(methyl methacrylate)
| 0.7 nm |
C |
Thickness | 1 nm | C |
Thickness | 0.345 nm | C |
Thickness | 4 um | GaN |
Thickness | 0.3–0.4 nm | — |
Thickness | 0.6–0.8 nm | — |
Temperature | 900–1100 °C | — |
semiconductor structure with three-layer porous graphene buffer
gallium nitride
GaN
metal foil (Cu foil or Ni foil)
methane
CH₄
hydrogen
H₂
ferric chloride
FeCl₃
Poly(methyl methacrylate)
| 0.7 nm |
C |
Thickness | 1 nm | C |
Thickness | 0.345 nm | C |
Thickness | 4 um | GaN |
Thickness | 0.3–0.4 nm | — |
Thickness | 0.6–0.8 nm | — |
Temperature | 900–1100 °C | — |
semiconductor structure with three-layer porous graphene buffer
gallium nitride
GaN
metal foil (Cu foil or Ni foil)
methane
CH₄
hydrogen
H₂
ferric chloride
FeCl₃
Poly(methyl methacrylate)
| 0.7 nm |
C |
Thickness | 1 nm | C |
Thickness | 0.345 nm | C |
Thickness | 4 um | GaN |
Thickness | 0.3–0.4 nm | — |
Thickness | 0.6–0.8 nm | — |
Temperature | 900–1100 °C | — |
semiconductor structure with three-layer porous graphene buffer
gallium nitride
GaN
metal foil (Cu foil or Ni foil)
methane
CH₄
hydrogen
H₂
ferric chloride
FeCl₃
Poly(methyl methacrylate)
| 0.7 nm |
C |
Thickness | 1 nm | C |
Thickness | 0.345 nm | C |
Thickness | 4 um | GaN |
Thickness | 0.3–0.4 nm | — |
Thickness | 0.6–0.8 nm | — |
Temperature | 900–1100 °C | — |