Patent
US 10,302,498SILICON NITRIDE-CARBON NANOTUBE-GRAPHENE NANOCOMPOSITE MICROBOLOMETER IR DETECTOR
Ashok K. Sood, Elwood J. Egerton
US
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Patent
Atlas literature
Patent
US 10,302,498Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A nanocomposite infrared detector for a microbolometer, comprising: a layer of vanadium oxide; a layer of carbon nanotubes; a layer of Si₃N4; and a layer of graphene. New
The nanocomposite infrared detector of claim 17, wherein the carbon nanotubes are at least one of aligned, partially aligned, or unaligned. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes further comprises silicon nanoparticles in a concentration of.01 to 10 percent by volume. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises multi wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes and multi wall carbon nanotubes having diameters corresponding to a tuned I R responsive wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene comprises one or more monolayers of graphene. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes is atop and immediately adjacent to the layer of vanadium oxide. New
The nanocomposite infrared detector of claim 17, wherein the layer of Si 3 N₄ is atop and immediately adjacent to the layer of carbon nanotubes. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene is atop and immediately adjacent to the layer of Si₃N4. New
The nanocomposite infrared detector of claim 17, wherein the layer of vanadium oxide is disposed atop a cantilevered Si₃N₄ beam. New
Layer stacks claimed or described, ordered top of device to substrate.
nanocomposite infrared detector/microbolometer
Materials described outside the worked examples.
vanadium oxide
VOx
carbon nanotubes
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nedt | <1 mK | — |
Spectral Response Range | 2–12 microns |
Patent
Atlas literature
Patent
US 10,302,498Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A nanocomposite infrared detector for a microbolometer, comprising: a layer of vanadium oxide; a layer of carbon nanotubes; a layer of Si₃N4; and a layer of graphene. New
The nanocomposite infrared detector of claim 17, wherein the carbon nanotubes are at least one of aligned, partially aligned, or unaligned. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes further comprises silicon nanoparticles in a concentration of.01 to 10 percent by volume. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises multi wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes and multi wall carbon nanotubes having diameters corresponding to a tuned I R responsive wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene comprises one or more monolayers of graphene. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes is atop and immediately adjacent to the layer of vanadium oxide. New
The nanocomposite infrared detector of claim 17, wherein the layer of Si 3 N₄ is atop and immediately adjacent to the layer of carbon nanotubes. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene is atop and immediately adjacent to the layer of Si₃N4. New
The nanocomposite infrared detector of claim 17, wherein the layer of vanadium oxide is disposed atop a cantilevered Si₃N₄ beam. New
Layer stacks claimed or described, ordered top of device to substrate.
nanocomposite infrared detector/microbolometer
Materials described outside the worked examples.
vanadium oxide
VOx
carbon nanotubes
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nedt | <1 mK | — |
Spectral Response Range | 2–12 microns |
Patent
Atlas literature
Patent
US 10,302,498Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A nanocomposite infrared detector for a microbolometer, comprising: a layer of vanadium oxide; a layer of carbon nanotubes; a layer of Si₃N4; and a layer of graphene. New
The nanocomposite infrared detector of claim 17, wherein the carbon nanotubes are at least one of aligned, partially aligned, or unaligned. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes further comprises silicon nanoparticles in a concentration of.01 to 10 percent by volume. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises multi wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes and multi wall carbon nanotubes having diameters corresponding to a tuned I R responsive wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene comprises one or more monolayers of graphene. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes is atop and immediately adjacent to the layer of vanadium oxide. New
The nanocomposite infrared detector of claim 17, wherein the layer of Si 3 N₄ is atop and immediately adjacent to the layer of carbon nanotubes. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene is atop and immediately adjacent to the layer of Si₃N4. New
The nanocomposite infrared detector of claim 17, wherein the layer of vanadium oxide is disposed atop a cantilevered Si₃N₄ beam. New
Layer stacks claimed or described, ordered top of device to substrate.
nanocomposite infrared detector/microbolometer
Materials described outside the worked examples.
vanadium oxide
VOx
carbon nanotubes
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nedt | <1 mK | — |
Spectral Response Range | 2–12 microns |
Patent
Atlas literature
Patent
US 10,302,498Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A nanocomposite infrared detector for a microbolometer, comprising: a layer of vanadium oxide; a layer of carbon nanotubes; a layer of Si₃N4; and a layer of graphene. New
The nanocomposite infrared detector of claim 17, wherein the carbon nanotubes are at least one of aligned, partially aligned, or unaligned. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes further comprises silicon nanoparticles in a concentration of.01 to 10 percent by volume. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises multi wall carbon nanotubes having diameters corresponding to a tuned I R response wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes comprises single wall carbon nanotubes and multi wall carbon nanotubes having diameters corresponding to a tuned I R responsive wavelength. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene comprises one or more monolayers of graphene. New
The nanocomposite infrared detector of claim 17, wherein the layer of carbon nanotubes is atop and immediately adjacent to the layer of vanadium oxide. New
The nanocomposite infrared detector of claim 17, wherein the layer of Si 3 N₄ is atop and immediately adjacent to the layer of carbon nanotubes. New
The nanocomposite infrared detector of claim 17, wherein the layer of graphene is atop and immediately adjacent to the layer of Si₃N4. New
The nanocomposite infrared detector of claim 17, wherein the layer of vanadium oxide is disposed atop a cantilevered Si₃N₄ beam. New
Layer stacks claimed or described, ordered top of device to substrate.
nanocomposite infrared detector/microbolometer
Materials described outside the worked examples.
vanadium oxide
VOx
carbon nanotubes
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nedt | <1 mK | — |
Spectral Response Range | 2–12 microns |
silicon nitride
Si₃N₄
graphene
silicon nanoparticles
Si
single wall carbon nanotubes
multi wall carbon nanotubes
amorphous silicon
a-Si
| — |
Thickness | 2–12 µm | — |
Thickness | 1–12 µm | — |
Thickness | 1000–3000 Å | — |
Voltage | 50–100 V | — |
Thickness | 1.5–12 µm | — |
Thickness | 8–12 µm | — |
Thickness | 3–5 µm | — |
Thickness | ≤ 25 µm | — |
silicon nitride
Si₃N₄
graphene
silicon nanoparticles
Si
single wall carbon nanotubes
multi wall carbon nanotubes
amorphous silicon
a-Si
| — |
Thickness | 2–12 µm | — |
Thickness | 1–12 µm | — |
Thickness | 1000–3000 Å | — |
Voltage | 50–100 V | — |
Thickness | 1.5–12 µm | — |
Thickness | 8–12 µm | — |
Thickness | 3–5 µm | — |
Thickness | ≤ 25 µm | — |
silicon nitride
Si₃N₄
graphene
silicon nanoparticles
Si
single wall carbon nanotubes
multi wall carbon nanotubes
amorphous silicon
a-Si
| — |
Thickness | 2–12 µm | — |
Thickness | 1–12 µm | — |
Thickness | 1000–3000 Å | — |
Voltage | 50–100 V | — |
Thickness | 1.5–12 µm | — |
Thickness | 8–12 µm | — |
Thickness | 3–5 µm | — |
Thickness | ≤ 25 µm | — |
silicon nitride
Si₃N₄
graphene
silicon nanoparticles
Si
single wall carbon nanotubes
multi wall carbon nanotubes
amorphous silicon
a-Si
| — |
Thickness | 2–12 µm | — |
Thickness | 1–12 µm | — |
Thickness | 1000–3000 Å | — |
Voltage | 50–100 V | — |
Thickness | 1.5–12 µm | — |
Thickness | 8–12 µm | — |
Thickness | 3–5 µm | — |
Thickness | ≤ 25 µm | — |