Patent
US 10,026,856SYSTEMS AND METHODS FOR ADVANCED ULTRA-HIGH-PERFORMANCE InP SOLAR CELLS
Mark Wanlass
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,026,856Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1, la and l b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. [0010] Figure 2a is a schematic graph generally illustrating a High-Low (H L) doping architecture. [0011] Figure 2b is a graph generally illustrating …
Figure 3 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure. [0013] Figures 4a and 4b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. …
Figure 5 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 6 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photovoltaic device comprising: a heterointerface system architecture comprising a front surface confinement layer and an emitter layer; and a High-Low (H L) doping architecture comprising a back surface confinement layer and a base layer, wherein: the emitter layer and the base layer form a p-n junction absorber layer, at least one of the emitter layer or the base layer comprises I nP, and the back surface confinement layer comprises n-type I nP and has a thickness of 7 nm or less.
The device of claim 1, wherein the p-n junction absorber layer includes a homojunction, and both the emitter layer and the base layer comprise I nP.
The device of claim 1, wherein the p-n junction absorber layer includes a heterojunction.
The device of claim 1, wherein: the base layer comprises n-type I nP and is more lightly doped than the back surface confinement layer, and a recombination rate is radiatively dominated in the base layer.
Attorney Docket No. NREL 13-42A
Attorney Docket No. NREL 13-42A
Layer stacks claimed or described, ordered top of device to substrate.
InP photovoltaic device with dual minority-carrier confinement
Materials described outside the worked examples.
InP (emitter layer)
InP
InP (pseudo-binary alloy with up to ~5% other III-IV elements)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
back surface confinement layer thickness (claimed maximum) | 7 nm | InP |
highest efficiency achieved for InP solar cells (prior art, background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,026,856Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1, la and l b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. [0010] Figure 2a is a schematic graph generally illustrating a High-Low (H L) doping architecture. [0011] Figure 2b is a graph generally illustrating …
Figure 3 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure. [0013] Figures 4a and 4b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. …
Figure 5 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 6 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photovoltaic device comprising: a heterointerface system architecture comprising a front surface confinement layer and an emitter layer; and a High-Low (H L) doping architecture comprising a back surface confinement layer and a base layer, wherein: the emitter layer and the base layer form a p-n junction absorber layer, at least one of the emitter layer or the base layer comprises I nP, and the back surface confinement layer comprises n-type I nP and has a thickness of 7 nm or less.
The device of claim 1, wherein the p-n junction absorber layer includes a homojunction, and both the emitter layer and the base layer comprise I nP.
The device of claim 1, wherein the p-n junction absorber layer includes a heterojunction.
The device of claim 1, wherein: the base layer comprises n-type I nP and is more lightly doped than the back surface confinement layer, and a recombination rate is radiatively dominated in the base layer.
Attorney Docket No. NREL 13-42A
Attorney Docket No. NREL 13-42A
Layer stacks claimed or described, ordered top of device to substrate.
InP photovoltaic device with dual minority-carrier confinement
Materials described outside the worked examples.
InP (emitter layer)
InP
InP (pseudo-binary alloy with up to ~5% other III-IV elements)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
back surface confinement layer thickness (claimed maximum) | 7 nm | InP |
highest efficiency achieved for InP solar cells (prior art, background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,026,856Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1, la and l b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. [0010] Figure 2a is a schematic graph generally illustrating a High-Low (H L) doping architecture. [0011] Figure 2b is a graph generally illustrating …
Figure 3 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure. [0013] Figures 4a and 4b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. …
Figure 5 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 6 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photovoltaic device comprising: a heterointerface system architecture comprising a front surface confinement layer and an emitter layer; and a High-Low (H L) doping architecture comprising a back surface confinement layer and a base layer, wherein: the emitter layer and the base layer form a p-n junction absorber layer, at least one of the emitter layer or the base layer comprises I nP, and the back surface confinement layer comprises n-type I nP and has a thickness of 7 nm or less.
The device of claim 1, wherein the p-n junction absorber layer includes a homojunction, and both the emitter layer and the base layer comprise I nP.
The device of claim 1, wherein the p-n junction absorber layer includes a heterojunction.
The device of claim 1, wherein: the base layer comprises n-type I nP and is more lightly doped than the back surface confinement layer, and a recombination rate is radiatively dominated in the base layer.
Attorney Docket No. NREL 13-42A
Attorney Docket No. NREL 13-42A
Layer stacks claimed or described, ordered top of device to substrate.
InP photovoltaic device with dual minority-carrier confinement
Materials described outside the worked examples.
InP (emitter layer)
InP
InP (pseudo-binary alloy with up to ~5% other III-IV elements)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
back surface confinement layer thickness (claimed maximum) | 7 nm | InP |
highest efficiency achieved for InP solar cells (prior art, background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,026,856Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1, la and l b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. [0010] Figure 2a is a schematic graph generally illustrating a High-Low (H L) doping architecture. [0011] Figure 2b is a graph generally illustrating …
Figure 3 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure. [0013] Figures 4a and 4b are block diagrams illustrating general schematic structures for InP solar cell example embodiments of the present disclosure. …
Figure 5 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 6 is a block diagram illustrating a general schematic structure for an InP solar cell of an example embodiment of the present disclosure.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photovoltaic device comprising: a heterointerface system architecture comprising a front surface confinement layer and an emitter layer; and a High-Low (H L) doping architecture comprising a back surface confinement layer and a base layer, wherein: the emitter layer and the base layer form a p-n junction absorber layer, at least one of the emitter layer or the base layer comprises I nP, and the back surface confinement layer comprises n-type I nP and has a thickness of 7 nm or less.
The device of claim 1, wherein the p-n junction absorber layer includes a homojunction, and both the emitter layer and the base layer comprise I nP.
The device of claim 1, wherein the p-n junction absorber layer includes a heterojunction.
The device of claim 1, wherein: the base layer comprises n-type I nP and is more lightly doped than the back surface confinement layer, and a recombination rate is radiatively dominated in the base layer.
Attorney Docket No. NREL 13-42A
Attorney Docket No. NREL 13-42A
Layer stacks claimed or described, ordered top of device to substrate.
InP photovoltaic device with dual minority-carrier confinement
Materials described outside the worked examples.
InP (emitter layer)
InP
InP (pseudo-binary alloy with up to ~5% other III-IV elements)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 7 is a chart illustrati ng a graph of composite spectral internal quantum efficiency (IQE), absolute external quantum efficiency (AEQE), and reflectance data for an InP solar cell of an example embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
back surface confinement layer thickness (claimed maximum) | 7 nm | InP |
highest efficiency achieved for InP solar cells (prior art, background) |
Related documents with shared materials, methods, properties, or citations.
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
| 22 % |
InP |
highest efficiency achieved for GaAs solar cells (prior art, background) | 26 % | — |
projected one-sun PV conversion efficiency with BSR and optical confinement techniques | 30 % | InP |
InP band gap | 1.35 eV | InP |
Thickness | 800–920 nm | — |
Thickness | 10-0 cm | — |
Thickness | ≤ 800 nm | — |
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
| 22 % |
InP |
highest efficiency achieved for GaAs solar cells (prior art, background) | 26 % | — |
projected one-sun PV conversion efficiency with BSR and optical confinement techniques | 30 % | InP |
InP band gap | 1.35 eV | InP |
Thickness | 800–920 nm | — |
Thickness | 10-0 cm | — |
Thickness | ≤ 800 nm | — |
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
| 22 % |
InP |
highest efficiency achieved for GaAs solar cells (prior art, background) | 26 % | — |
projected one-sun PV conversion efficiency with BSR and optical confinement techniques | 30 % | InP |
InP band gap | 1.35 eV | InP |
Thickness | 800–920 nm | — |
Thickness | 10-0 cm | — |
Thickness | ≤ 800 nm | — |
Figure 8 is a chart illustrating illuminated current density versus voltage for an InP solar cell of an example embodiment of the present disclosure. [0020] Figures 9a and 9b are performance characterization plots for example embodiments of the present disclosure.
| 22 % |
InP |
highest efficiency achieved for GaAs solar cells (prior art, background) | 26 % | — |
projected one-sun PV conversion efficiency with BSR and optical confinement techniques | 30 % | InP |
InP band gap | 1.35 eV | InP |
Thickness | 800–920 nm | — |
Thickness | 10-0 cm | — |
Thickness | ≤ 800 nm | — |