Patent
Atlas literature
Patent
US 11,087,018Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
An apparatus as claimed in claim 16 wherein the different parameter of the different drain-source bias voltages are selected from; different amplitudes, different pulse durations. New
An apparatus as claimed in claim 16 comprising at least one light emitting diode. New
An apparatus as claimed in claim 16 comprising a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of; different wavelengths of light, different power outputs. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the scrambled identification signal to be transmitted to another device. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the apparatus to receive a control signal from another device such that in response to the received control signal the apparatus obtains output signals from the plurality of quantum dot-graphene field effect transistors. New
An apparatus as claimed in claim 16 wherein the plurality of quantum-dot field effect transistors are provided in at least one of; a linear array, a pseudo linear array. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are provided on a flexible substrate. New
An apparatus as claimed in claim 16 wherein the quantum dots comprise colloidal quantum dots. New
An apparatus as claimed in claim 16 wherein the apparatus is arranged to detect light with a wavelength between 500 nm and 2000nm. New
An apparatus as claimed in claim 16 wherein the apparatus is configured to be worn by a user. New
An identification device comprising an apparatus, said apparatus comprising:. a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
A method comprising: providing a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot- graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; obtaining output signals from the plurality of quantum dot-graphene field effect transistors, where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor; and using the obtained output signals as a scrambled identification signal of the user of the
A method as claimed in claim 30, wherein the source bias voltages are selected from: different
A method as claimed in claim 30 wherein the diode. New
A method as claimed in claim 30 wherein the diodes where different light emitting diodes are wavelengths of light, or different power outputs.
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to user. New
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to part of a user. New apparatus. New different parameter of the different drain-amplitudes, different pulse durations. New apparatus comprises at least one light emitting apparatus comprises a plurality of light emitting configured to provide at least one of: different New plurality of quantum dot-graphene field effect detect light that has been reflected by a part of a plurality of quantum dot-graphene field effect detect light that has been transmitted through a
Layer stacks claimed or described, ordered top of device to substrate.
quantum dot-graphene field effect transistor
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 nm | — |
Patent
Atlas literature
Patent
US 11,087,018Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
An apparatus as claimed in claim 16 wherein the different parameter of the different drain-source bias voltages are selected from; different amplitudes, different pulse durations. New
An apparatus as claimed in claim 16 comprising at least one light emitting diode. New
An apparatus as claimed in claim 16 comprising a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of; different wavelengths of light, different power outputs. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the scrambled identification signal to be transmitted to another device. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the apparatus to receive a control signal from another device such that in response to the received control signal the apparatus obtains output signals from the plurality of quantum dot-graphene field effect transistors. New
An apparatus as claimed in claim 16 wherein the plurality of quantum-dot field effect transistors are provided in at least one of; a linear array, a pseudo linear array. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are provided on a flexible substrate. New
An apparatus as claimed in claim 16 wherein the quantum dots comprise colloidal quantum dots. New
An apparatus as claimed in claim 16 wherein the apparatus is arranged to detect light with a wavelength between 500 nm and 2000nm. New
An apparatus as claimed in claim 16 wherein the apparatus is configured to be worn by a user. New
An identification device comprising an apparatus, said apparatus comprising:. a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
A method comprising: providing a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot- graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; obtaining output signals from the plurality of quantum dot-graphene field effect transistors, where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor; and using the obtained output signals as a scrambled identification signal of the user of the
A method as claimed in claim 30, wherein the source bias voltages are selected from: different
A method as claimed in claim 30 wherein the diode. New
A method as claimed in claim 30 wherein the diodes where different light emitting diodes are wavelengths of light, or different power outputs.
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to user. New
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to part of a user. New apparatus. New different parameter of the different drain-amplitudes, different pulse durations. New apparatus comprises at least one light emitting apparatus comprises a plurality of light emitting configured to provide at least one of: different New plurality of quantum dot-graphene field effect detect light that has been reflected by a part of a plurality of quantum dot-graphene field effect detect light that has been transmitted through a
Layer stacks claimed or described, ordered top of device to substrate.
quantum dot-graphene field effect transistor
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 nm | — |
Patent
Atlas literature
Patent
US 11,087,018Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
An apparatus as claimed in claim 16 wherein the different parameter of the different drain-source bias voltages are selected from; different amplitudes, different pulse durations. New
An apparatus as claimed in claim 16 comprising at least one light emitting diode. New
An apparatus as claimed in claim 16 comprising a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of; different wavelengths of light, different power outputs. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the scrambled identification signal to be transmitted to another device. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the apparatus to receive a control signal from another device such that in response to the received control signal the apparatus obtains output signals from the plurality of quantum dot-graphene field effect transistors. New
An apparatus as claimed in claim 16 wherein the plurality of quantum-dot field effect transistors are provided in at least one of; a linear array, a pseudo linear array. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are provided on a flexible substrate. New
An apparatus as claimed in claim 16 wherein the quantum dots comprise colloidal quantum dots. New
An apparatus as claimed in claim 16 wherein the apparatus is arranged to detect light with a wavelength between 500 nm and 2000nm. New
An apparatus as claimed in claim 16 wherein the apparatus is configured to be worn by a user. New
An identification device comprising an apparatus, said apparatus comprising:. a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
A method comprising: providing a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot- graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; obtaining output signals from the plurality of quantum dot-graphene field effect transistors, where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor; and using the obtained output signals as a scrambled identification signal of the user of the
A method as claimed in claim 30, wherein the source bias voltages are selected from: different
A method as claimed in claim 30 wherein the diode. New
A method as claimed in claim 30 wherein the diodes where different light emitting diodes are wavelengths of light, or different power outputs.
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to user. New
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to part of a user. New apparatus. New different parameter of the different drain-amplitudes, different pulse durations. New apparatus comprises at least one light emitting apparatus comprises a plurality of light emitting configured to provide at least one of: different New plurality of quantum dot-graphene field effect detect light that has been reflected by a part of a plurality of quantum dot-graphene field effect detect light that has been transmitted through a
Layer stacks claimed or described, ordered top of device to substrate.
quantum dot-graphene field effect transistor
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 nm | — |
Patent
Atlas literature
Patent
US 11,087,018Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
An apparatus as claimed in claim 16 wherein the different parameter of the different drain-source bias voltages are selected from; different amplitudes, different pulse durations. New
An apparatus as claimed in claim 16 comprising at least one light emitting diode. New
An apparatus as claimed in claim 16 comprising a plurality of light emitting diodes where different light emitting diodes are configured to provide at least one of; different wavelengths of light, different power outputs. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been reflected by a part of a user. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are positioned within the apparatus to detect light that has been transmitted through a part of a user. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the scrambled identification signal to be transmitted to another device. New
An apparatus as claimed in claim 16 comprising at least one transmitter configured to enable the apparatus to receive a control signal from another device such that in response to the received control signal the apparatus obtains output signals from the plurality of quantum dot-graphene field effect transistors. New
An apparatus as claimed in claim 16 wherein the plurality of quantum-dot field effect transistors are provided in at least one of; a linear array, a pseudo linear array. New
An apparatus as claimed in claim 16 wherein the plurality of quantum dot-graphene field effect transistors are provided on a flexible substrate. New
An apparatus as claimed in claim 16 wherein the quantum dots comprise colloidal quantum dots. New
An apparatus as claimed in claim 16 wherein the apparatus is arranged to detect light with a wavelength between 500 nm and 2000nm. New
An apparatus as claimed in claim 16 wherein the apparatus is configured to be worn by a user. New
An identification device comprising an apparatus, said apparatus comprising:. a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot-graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from the plurality of quantum dot-graphene field effect transistors where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor, to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus. New
A method comprising: providing a drain-source bias voltage to a plurality of quantum dot-graphene field effect transistors, wherein the drain-source bias voltage is individual to ones of said plurality of quantum dot- graphene field effect transistors, and wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; obtaining output signals from the plurality of quantum dot-graphene field effect transistors, where an associated output signal of a quantum dot-graphene field effect transistor is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage of the quantum dot-graphene field effect transistor; and using the obtained output signals as a scrambled identification signal of the user of the
A method as claimed in claim 30, wherein the source bias voltages are selected from: different
A method as claimed in claim 30 wherein the diode. New
A method as claimed in claim 30 wherein the diodes where different light emitting diodes are wavelengths of light, or different power outputs.
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to user. New
A method as claimed in claim 30 wherein the transistors are positioned within the apparatus to part of a user. New apparatus. New different parameter of the different drain-amplitudes, different pulse durations. New apparatus comprises at least one light emitting apparatus comprises a plurality of light emitting configured to provide at least one of: different New plurality of quantum dot-graphene field effect detect light that has been reflected by a part of a plurality of quantum dot-graphene field effect detect light that has been transmitted through a
Layer stacks claimed or described, ordered top of device to substrate.
quantum dot-graphene field effect transistor
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 nm | — |
flexible substrate
flexible substrate
flexible substrate
flexible substrate
