Patent
US 10,644,303Title: METHOD FOR THE FABRICATION OF IND IU M-GALL IU M NITRIDE ELECTRODES FOR ELECTROCHEMIC- AL DEVICES
NOETZEL, Richard, SANGUINETTI, Stefano
21 September 2017·US
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Patent
Atlas literature
Patent
US 10,644,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for the fabrication of electrodes, comprising the steps of: a) epitaxially depositing Indium-Gallium Nitride (InGaN) in form of a thin layer onto a surface of a silicon substrate exposing a crystal face; b) detaching the deposit of InGaN from the substrate; c) fragmenting the deposit of InGaN; d) transferring the fragments of InGaN thus obtained onto a conductive support with one-, two- or three-dimensional structure. Previously presented
The method according to claim 1, comprising a further step a') carried out after step a), in which quantum dots or quantum rings of InN are produced onto said InGaN layer. Previously presented
The method according to claim 1, in which steps b) and c) take place simultaneously, or step c) immediately after and as a direct consequence of step b). Previously presented
The method according to claim 1, in which step a) is carried out by metalorganic vapor-phase epitaxy or molecular beam epitaxy (M BE). Previously presented
The method according to claim 1, in which step b) is carried out by a technique selected among mechanical grinding, selective dry etching, wet etching or combinations thereof. Previously presented
The method according to claim 1, in which step c) is carried out by shock, vibration, ultrasonic stirring or combinations thereof. Previously presented
The method according to claim 1 in which, after step c), the obtained fragments are separated into fractions of different size ranges, recovering one or more fractions of narrow size distribution to be used in step d). Previously presented
The method according to claim 1, in which step d) is carried out by preparing a suspension of the fragments obtained in step c) in a liquid medium, immersing the conductive support with one, two- or three-dimensional structure in said suspension, and bubbling or stirring said suspension. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of adhering said fragments to said conductive support via electrostatic bonding. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of stabilizing the resulting structure using a polymer electrolyte membrane. Previously presented
An electrode produced according to claim 1. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InGaN electrode on conductive support
InGaN electrode on wire (1D conductive support)
InGaN electrode on foil (2D conductive support)
Materials described outside the worked examples.
Indium-Gallium Nitride
InGaN
silicon substrate
Si
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 10,644,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for the fabrication of electrodes, comprising the steps of: a) epitaxially depositing Indium-Gallium Nitride (InGaN) in form of a thin layer onto a surface of a silicon substrate exposing a crystal face; b) detaching the deposit of InGaN from the substrate; c) fragmenting the deposit of InGaN; d) transferring the fragments of InGaN thus obtained onto a conductive support with one-, two- or three-dimensional structure. Previously presented
The method according to claim 1, comprising a further step a') carried out after step a), in which quantum dots or quantum rings of InN are produced onto said InGaN layer. Previously presented
The method according to claim 1, in which steps b) and c) take place simultaneously, or step c) immediately after and as a direct consequence of step b). Previously presented
The method according to claim 1, in which step a) is carried out by metalorganic vapor-phase epitaxy or molecular beam epitaxy (M BE). Previously presented
The method according to claim 1, in which step b) is carried out by a technique selected among mechanical grinding, selective dry etching, wet etching or combinations thereof. Previously presented
The method according to claim 1, in which step c) is carried out by shock, vibration, ultrasonic stirring or combinations thereof. Previously presented
The method according to claim 1 in which, after step c), the obtained fragments are separated into fractions of different size ranges, recovering one or more fractions of narrow size distribution to be used in step d). Previously presented
The method according to claim 1, in which step d) is carried out by preparing a suspension of the fragments obtained in step c) in a liquid medium, immersing the conductive support with one, two- or three-dimensional structure in said suspension, and bubbling or stirring said suspension. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of adhering said fragments to said conductive support via electrostatic bonding. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of stabilizing the resulting structure using a polymer electrolyte membrane. Previously presented
An electrode produced according to claim 1. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InGaN electrode on conductive support
InGaN electrode on wire (1D conductive support)
InGaN electrode on foil (2D conductive support)
Materials described outside the worked examples.
Indium-Gallium Nitride
InGaN
silicon substrate
Si
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 10,644,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for the fabrication of electrodes, comprising the steps of: a) epitaxially depositing Indium-Gallium Nitride (InGaN) in form of a thin layer onto a surface of a silicon substrate exposing a crystal face; b) detaching the deposit of InGaN from the substrate; c) fragmenting the deposit of InGaN; d) transferring the fragments of InGaN thus obtained onto a conductive support with one-, two- or three-dimensional structure. Previously presented
The method according to claim 1, comprising a further step a') carried out after step a), in which quantum dots or quantum rings of InN are produced onto said InGaN layer. Previously presented
The method according to claim 1, in which steps b) and c) take place simultaneously, or step c) immediately after and as a direct consequence of step b). Previously presented
The method according to claim 1, in which step a) is carried out by metalorganic vapor-phase epitaxy or molecular beam epitaxy (M BE). Previously presented
The method according to claim 1, in which step b) is carried out by a technique selected among mechanical grinding, selective dry etching, wet etching or combinations thereof. Previously presented
The method according to claim 1, in which step c) is carried out by shock, vibration, ultrasonic stirring or combinations thereof. Previously presented
The method according to claim 1 in which, after step c), the obtained fragments are separated into fractions of different size ranges, recovering one or more fractions of narrow size distribution to be used in step d). Previously presented
The method according to claim 1, in which step d) is carried out by preparing a suspension of the fragments obtained in step c) in a liquid medium, immersing the conductive support with one, two- or three-dimensional structure in said suspension, and bubbling or stirring said suspension. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of adhering said fragments to said conductive support via electrostatic bonding. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of stabilizing the resulting structure using a polymer electrolyte membrane. Previously presented
An electrode produced according to claim 1. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InGaN electrode on conductive support
InGaN electrode on wire (1D conductive support)
InGaN electrode on foil (2D conductive support)
Materials described outside the worked examples.
Indium-Gallium Nitride
InGaN
silicon substrate
Si
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 10,644,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for the fabrication of electrodes, comprising the steps of: a) epitaxially depositing Indium-Gallium Nitride (InGaN) in form of a thin layer onto a surface of a silicon substrate exposing a crystal face; b) detaching the deposit of InGaN from the substrate; c) fragmenting the deposit of InGaN; d) transferring the fragments of InGaN thus obtained onto a conductive support with one-, two- or three-dimensional structure. Previously presented
The method according to claim 1, comprising a further step a') carried out after step a), in which quantum dots or quantum rings of InN are produced onto said InGaN layer. Previously presented
The method according to claim 1, in which steps b) and c) take place simultaneously, or step c) immediately after and as a direct consequence of step b). Previously presented
The method according to claim 1, in which step a) is carried out by metalorganic vapor-phase epitaxy or molecular beam epitaxy (M BE). Previously presented
The method according to claim 1, in which step b) is carried out by a technique selected among mechanical grinding, selective dry etching, wet etching or combinations thereof. Previously presented
The method according to claim 1, in which step c) is carried out by shock, vibration, ultrasonic stirring or combinations thereof. Previously presented
The method according to claim 1 in which, after step c), the obtained fragments are separated into fractions of different size ranges, recovering one or more fractions of narrow size distribution to be used in step d). Previously presented
The method according to claim 1, in which step d) is carried out by preparing a suspension of the fragments obtained in step c) in a liquid medium, immersing the conductive support with one, two- or three-dimensional structure in said suspension, and bubbling or stirring said suspension. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of adhering said fragments to said conductive support via electrostatic bonding. Previously presented
The method according to claim 1, in which step d) further comprises carrying out an operation of stabilizing the resulting structure using a polymer electrolyte membrane. Previously presented
An electrode produced according to claim 1. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
InGaN electrode on conductive support
InGaN electrode on wire (1D conductive support)
InGaN electrode on foil (2D conductive support)
Materials described outside the worked examples.
Indium-Gallium Nitride
InGaN
silicon substrate
Si
Additional fabrication and treatment steps described in the patent.
InGaN electrode on 3D conductive support (net/fabric/sponge/cage)
Indium Nitride quantum dots/quantum rings
InN
aluminum foil
Al
carbon nanotube wrapped textile fiber/pure carbon nanotube network
graphene flake assembly
InGaN electrode on 3D conductive support (net/fabric/sponge/cage)
Indium Nitride quantum dots/quantum rings
InN
aluminum foil
Al
carbon nanotube wrapped textile fiber/pure carbon nanotube network
graphene flake assembly
InGaN electrode on 3D conductive support (net/fabric/sponge/cage)
Indium Nitride quantum dots/quantum rings
InN
aluminum foil
Al
carbon nanotube wrapped textile fiber/pure carbon nanotube network
graphene flake assembly
InGaN electrode on 3D conductive support (net/fabric/sponge/cage)
Indium Nitride quantum dots/quantum rings
InN
aluminum foil
Al
carbon nanotube wrapped textile fiber/pure carbon nanotube network
graphene flake assembly