Patent
US 10,246,795TRANSFER-FREE METHOD FOR FORMING GRAPHENE LAYER
Soon-Gil Yoon
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,246,795Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the results of simulating the adsorption position of carbon on a titanium surface.
FIG. 2 shows the results of simulating activation energy required for surface diffusion of carbon on a titanium surface.
FIG. 3 shows the results of simulating thermodynamics of C₆ ring formation and graphene layer formation.
FIG. 4 shows the results of simulating graphene grown on a Ti (0001) substrate by perfect Ti-C lattice matching. 5
FIG. 5 is a schematic view of a 3-zone furnace used in chemical vapor deposition in an example of the present invention.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing an electrical device, the method comprising the steps of: (A) modifying a surface of a base substrate by sputtering titanium (Ti) on the surface to form a Ti layer on the surface, wherein the Ti layer has a thickness of 3-20 nm; and (B) growing a graphene layer, by chemical vapor deposition, on the Ti layer formed on the surface;s-d Currently amended
The method of claim 1, wherein the base substrate is made of a material comprising glass, Si O 2, a synthetic polymer containing an oxygen atom, or any combination thereof. Previously presented
The method of claim 1, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150 ° C to 900 °C. Previously presented
The method of claim 1, further comprising, before growing the graphene layer, treating the Ti layer with hydrogen gas. Previously presented
The method of claim 1, wherein a reactive gas which is used in the chemical vapor deposition comprises a mixture of hydrogen gas and one or more carbon sources selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol and propanol. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrical device with graphene layer
Materials described outside the worked examples.
titanium
Ti
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 0.26–0.56 eV | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,246,795Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the results of simulating the adsorption position of carbon on a titanium surface.
FIG. 2 shows the results of simulating activation energy required for surface diffusion of carbon on a titanium surface.
FIG. 3 shows the results of simulating thermodynamics of C₆ ring formation and graphene layer formation.
FIG. 4 shows the results of simulating graphene grown on a Ti (0001) substrate by perfect Ti-C lattice matching. 5
FIG. 5 is a schematic view of a 3-zone furnace used in chemical vapor deposition in an example of the present invention.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing an electrical device, the method comprising the steps of: (A) modifying a surface of a base substrate by sputtering titanium (Ti) on the surface to form a Ti layer on the surface, wherein the Ti layer has a thickness of 3-20 nm; and (B) growing a graphene layer, by chemical vapor deposition, on the Ti layer formed on the surface;s-d Currently amended
The method of claim 1, wherein the base substrate is made of a material comprising glass, Si O 2, a synthetic polymer containing an oxygen atom, or any combination thereof. Previously presented
The method of claim 1, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150 ° C to 900 °C. Previously presented
The method of claim 1, further comprising, before growing the graphene layer, treating the Ti layer with hydrogen gas. Previously presented
The method of claim 1, wherein a reactive gas which is used in the chemical vapor deposition comprises a mixture of hydrogen gas and one or more carbon sources selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol and propanol. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrical device with graphene layer
Materials described outside the worked examples.
titanium
Ti
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 0.26–0.56 eV | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,246,795Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the results of simulating the adsorption position of carbon on a titanium surface.
FIG. 2 shows the results of simulating activation energy required for surface diffusion of carbon on a titanium surface.
FIG. 3 shows the results of simulating thermodynamics of C₆ ring formation and graphene layer formation.
FIG. 4 shows the results of simulating graphene grown on a Ti (0001) substrate by perfect Ti-C lattice matching. 5
FIG. 5 is a schematic view of a 3-zone furnace used in chemical vapor deposition in an example of the present invention.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing an electrical device, the method comprising the steps of: (A) modifying a surface of a base substrate by sputtering titanium (Ti) on the surface to form a Ti layer on the surface, wherein the Ti layer has a thickness of 3-20 nm; and (B) growing a graphene layer, by chemical vapor deposition, on the Ti layer formed on the surface;s-d Currently amended
The method of claim 1, wherein the base substrate is made of a material comprising glass, Si O 2, a synthetic polymer containing an oxygen atom, or any combination thereof. Previously presented
The method of claim 1, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150 ° C to 900 °C. Previously presented
The method of claim 1, further comprising, before growing the graphene layer, treating the Ti layer with hydrogen gas. Previously presented
The method of claim 1, wherein a reactive gas which is used in the chemical vapor deposition comprises a mixture of hydrogen gas and one or more carbon sources selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol and propanol. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrical device with graphene layer
Materials described outside the worked examples.
titanium
Ti
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 0.26–0.56 eV | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,246,795Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the results of simulating the adsorption position of carbon on a titanium surface.
FIG. 2 shows the results of simulating activation energy required for surface diffusion of carbon on a titanium surface.
FIG. 3 shows the results of simulating thermodynamics of C₆ ring formation and graphene layer formation.
FIG. 4 shows the results of simulating graphene grown on a Ti (0001) substrate by perfect Ti-C lattice matching. 5
FIG. 5 is a schematic view of a 3-zone furnace used in chemical vapor deposition in an example of the present invention.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing an electrical device, the method comprising the steps of: (A) modifying a surface of a base substrate by sputtering titanium (Ti) on the surface to form a Ti layer on the surface, wherein the Ti layer has a thickness of 3-20 nm; and (B) growing a graphene layer, by chemical vapor deposition, on the Ti layer formed on the surface;s-d Currently amended
The method of claim 1, wherein the base substrate is made of a material comprising glass, Si O 2, a synthetic polymer containing an oxygen atom, or any combination thereof. Previously presented
The method of claim 1, wherein the step (B) comprises growing graphene by chemical vapor deposition under a condition in which a temperature of the substrate is 150 ° C to 900 °C. Previously presented
The method of claim 1, further comprising, before growing the graphene layer, treating the Ti layer with hydrogen gas. Previously presented
The method of claim 1, wherein a reactive gas which is used in the chemical vapor deposition comprises a mixture of hydrogen gas and one or more carbon sources selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol and propanol. Previously presented
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrical device with graphene layer
Materials described outside the worked examples.
titanium
Ti
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a Raman spectrum showing the characteristics of growth of graphene at varying temperatures according to an example of the present invention. 10
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 0.26–0.56 eV | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
base substrate
hydrogen gas
H₂
carbon source
glass
silicon dioxide
SiO₂
polyethylene terephthalate
polyether sulfone
polycarbonate
polyimide
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
durability. Therefore, the graphene layer formed according to the present invention can be more advantageously used in flexible electrical devices that have recently attracted attention. 15 22 59126036v. 1 Claims SUMMARY 25 Accordingly, the present invention ha
| 150–900 °C |
| — |
Temperature | 150–400 °C | — |
Thickness | 3–20 nm | — |
Temperature | ≤ 400 °C | — |
base substrate
hydrogen gas
H₂
carbon source
glass
silicon dioxide
SiO₂
polyethylene terephthalate
polyether sulfone
polycarbonate
polyimide
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
durability. Therefore, the graphene layer formed according to the present invention can be more advantageously used in flexible electrical devices that have recently attracted attention. 15 22 59126036v. 1 Claims SUMMARY 25 Accordingly, the present invention ha
| 150–900 °C |
| — |
Temperature | 150–400 °C | — |
Thickness | 3–20 nm | — |
Temperature | ≤ 400 °C | — |
base substrate
hydrogen gas
H₂
carbon source
glass
silicon dioxide
SiO₂
polyethylene terephthalate
polyether sulfone
polycarbonate
polyimide
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
durability. Therefore, the graphene layer formed according to the present invention can be more advantageously used in flexible electrical devices that have recently attracted attention. 15 22 59126036v. 1 Claims SUMMARY 25 Accordingly, the present invention ha
| 150–900 °C |
| — |
Temperature | 150–400 °C | — |
Thickness | 3–20 nm | — |
Temperature | ≤ 400 °C | — |
base substrate
hydrogen gas
H₂
carbon source
glass
silicon dioxide
SiO₂
polyethylene terephthalate
polyether sulfone
polycarbonate
polyimide
FIG. 7 is a Raman spectrum showing the characteristics of growth of graphene under varying deposition conditions according to an example of the present …
FIG. 8 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of working 15 pressures.
FIG. 9 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of hydrogen reduction time.
FIG. 10 depicts a Raman spectrum and graphs showing the 20 characteristics of growth of graphene as a function of the content of hydrogen gas in a reactive gas.
FIG. 11 depicts a Raman spectrum and graphs showing the characteristics of growth of graphene as a function of the content of methane gas in a reactive gas.
durability. Therefore, the graphene layer formed according to the present invention can be more advantageously used in flexible electrical devices that have recently attracted attention. 15 22 59126036v. 1 Claims SUMMARY 25 Accordingly, the present invention ha
| 150–900 °C |
| — |
Temperature | 150–400 °C | — |
Thickness | 3–20 nm | — |
Temperature | ≤ 400 °C | — |