Patent
US 10,573,762VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
TingGang Zhu, Anup Bhalla, Ping Huang, Yueh-Se Ho
Alpha and Omega Semiconductor Incorporated·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,573,762Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type formed on an insulating substrate; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the dielectric field plate has an end extending at most up to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the plurality of junction barrier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 1, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate of the termination structure comprises a first dielectric layer, the first dielectric layer has a step recess where the part of the first dielectric layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the nitride-based epitaxial layer has a step recess where the part of the epitaxial layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode and the dielectric field plate extends at most to the step recess of the nitride-based epitaxial layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate comprising a first dielectric layer formed on a top surface of the nitride-based epitaxial layer and a second dielectric layer formed on the first metal layer and the first dielectric layer, the second dielectric layer having an opening exposing the first metal layer, wherein the second dielectric layer has an end that is recessed from an end of the first dielectric layer near the Schottky junction. Previously presented
The Schottky diode of claim 1, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
Canceled
Canceled
Canceled
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination S tructure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body, wherein the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky j unction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the dielectric field plate has an end extending at most ti p to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the plurality of junction ba rr ier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 13, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer and having an end that is recessed from an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 19, wherein the comprises a first dielectric layer, the first dielectric first dielectric layer having a thinner thickness is Schottky diode. Original
The Schottky diode of claim 19, wherein the where the part of the epitaxial layer having a junction of the Schottky diode and the dielectric the nitride-based epitaxial layer. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, the cathode nitride-based semiconductor body. Previously
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented nitride-based epitaxial layer forming the guard conductivity type and the dielectric field plate dielectric field plate of the termination structure layer has a step recess where the part of the disposed towards the Schottky junction of the nitride-based epitaxial layer has a step recess thinner thickness is disposed towards the Schottky field plate extends at most to the step recess of cathode electrode is formed on a backside of the electrode forming an ohmic contact with the presented cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based Schottky diode with insulating substrate, guard ring, dielectric field plate, and junction barrier diodes
nitride-based Schottky diode with slant profile dielectric field plate and guard ring
Materials described outside the worked examples.
nitride-based semiconductor body
first metal layer (anode)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14-1 cm | — |
Patent
Atlas literature
Patent
US 10,573,762Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type formed on an insulating substrate; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the dielectric field plate has an end extending at most up to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the plurality of junction barrier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 1, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate of the termination structure comprises a first dielectric layer, the first dielectric layer has a step recess where the part of the first dielectric layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the nitride-based epitaxial layer has a step recess where the part of the epitaxial layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode and the dielectric field plate extends at most to the step recess of the nitride-based epitaxial layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate comprising a first dielectric layer formed on a top surface of the nitride-based epitaxial layer and a second dielectric layer formed on the first metal layer and the first dielectric layer, the second dielectric layer having an opening exposing the first metal layer, wherein the second dielectric layer has an end that is recessed from an end of the first dielectric layer near the Schottky junction. Previously presented
The Schottky diode of claim 1, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
Canceled
Canceled
Canceled
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination S tructure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body, wherein the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky j unction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the dielectric field plate has an end extending at most ti p to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the plurality of junction ba rr ier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 13, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer and having an end that is recessed from an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 19, wherein the comprises a first dielectric layer, the first dielectric first dielectric layer having a thinner thickness is Schottky diode. Original
The Schottky diode of claim 19, wherein the where the part of the epitaxial layer having a junction of the Schottky diode and the dielectric the nitride-based epitaxial layer. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, the cathode nitride-based semiconductor body. Previously
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented nitride-based epitaxial layer forming the guard conductivity type and the dielectric field plate dielectric field plate of the termination structure layer has a step recess where the part of the disposed towards the Schottky junction of the nitride-based epitaxial layer has a step recess thinner thickness is disposed towards the Schottky field plate extends at most to the step recess of cathode electrode is formed on a backside of the electrode forming an ohmic contact with the presented cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based Schottky diode with insulating substrate, guard ring, dielectric field plate, and junction barrier diodes
nitride-based Schottky diode with slant profile dielectric field plate and guard ring
Materials described outside the worked examples.
nitride-based semiconductor body
first metal layer (anode)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14-1 cm | — |
Patent
Atlas literature
Patent
US 10,573,762Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type formed on an insulating substrate; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the dielectric field plate has an end extending at most up to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the plurality of junction barrier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 1, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate of the termination structure comprises a first dielectric layer, the first dielectric layer has a step recess where the part of the first dielectric layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the nitride-based epitaxial layer has a step recess where the part of the epitaxial layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode and the dielectric field plate extends at most to the step recess of the nitride-based epitaxial layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate comprising a first dielectric layer formed on a top surface of the nitride-based epitaxial layer and a second dielectric layer formed on the first metal layer and the first dielectric layer, the second dielectric layer having an opening exposing the first metal layer, wherein the second dielectric layer has an end that is recessed from an end of the first dielectric layer near the Schottky junction. Previously presented
The Schottky diode of claim 1, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
Canceled
Canceled
Canceled
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination S tructure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body, wherein the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky j unction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the dielectric field plate has an end extending at most ti p to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the plurality of junction ba rr ier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 13, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer and having an end that is recessed from an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 19, wherein the comprises a first dielectric layer, the first dielectric first dielectric layer having a thinner thickness is Schottky diode. Original
The Schottky diode of claim 19, wherein the where the part of the epitaxial layer having a junction of the Schottky diode and the dielectric the nitride-based epitaxial layer. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, the cathode nitride-based semiconductor body. Previously
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented nitride-based epitaxial layer forming the guard conductivity type and the dielectric field plate dielectric field plate of the termination structure layer has a step recess where the part of the disposed towards the Schottky junction of the nitride-based epitaxial layer has a step recess thinner thickness is disposed towards the Schottky field plate extends at most to the step recess of cathode electrode is formed on a backside of the electrode forming an ohmic contact with the presented cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based Schottky diode with insulating substrate, guard ring, dielectric field plate, and junction barrier diodes
nitride-based Schottky diode with slant profile dielectric field plate and guard ring
Materials described outside the worked examples.
nitride-based semiconductor body
first metal layer (anode)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14-1 cm | — |
Patent
Atlas literature
Patent
US 10,573,762Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type formed on an insulating substrate; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the dielectric field plate has an end extending at most up to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the plurality of junction barrier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 1, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate of the termination structure comprises a first dielectric layer, the first dielectric layer has a step recess where the part of the first dielectric layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 1, wherein the nitride-based epitaxial layer has a step recess where the part of the epitaxial layer having a thinner thickness is disposed towards the Schottky junction of the Schottky diode and the dielectric field plate extends at most to the step recess of the nitride-based epitaxial layer. Original
The Schottky diode of claim 1, wherein the dielectric field plate comprising a first dielectric layer formed on a top surface of the nitride-based epitaxial layer and a second dielectric layer formed on the first metal layer and the first dielectric layer, the second dielectric layer having an opening exposing the first metal layer, wherein the second dielectric layer has an end that is recessed from an end of the first dielectric layer near the Schottky junction. Previously presented
The Schottky diode of claim 1, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Previously presented
The Schottky diode of claim 1, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
Canceled
Canceled
Canceled
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination S tructure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer; and a plurality of junction barrier diodes formed at the Schottky junction, anode electrodes of the junction barrier diodes being formed from an array of islands of the nitride-based epitaxial layer of the second conductivity type formed under the first metal layer in an area of the Schottky junction and in contact with the nitride-based semiconductor body, wherein the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky j unction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the dielectric field plate has an end extending at most ti p to an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 13, wherein the plurality of junction ba rr ier diodes form depletion regions at the top surface of the semiconductor body to reduce charge concentration. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 13, wherein the cathode electrode is formed on a backside of the nitride-based semiconductor body, the cathode electrode forming an ohmic contact with the nitride-based semiconductor body. Original
The Schottky diode of claim 13, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented
A nitride-based Schottky diode, comprising: a nitride-based semiconductor body of a first conductivity type; a first metal layer formed on a front side of the nitride-based semiconductor body forming a Schottky junction therewith, the first metal layer forming an anode electrode of the Schottky diode; a cathode electrode in electrical contact with the nitride-based semiconductor body; and a termination structure formed on the front side of the nitride-based semiconductor body and at an edge of the anode electrode, the termination structure being configured to reduce electric field crowding at the edge of the anode electrode, the termination structure comprising: a guard ring comprising a nitride-based epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the front side of the nitride-based semiconductor body at the edge of the first metal layer, part of the nitride-based epitaxial layer extending under the first metal layer; and a dielectric field plate formed on a top surface of the nitride-based epitaxial layer and having an end that is recessed from an end of the nitride-based epitaxial layer near the Schottky junction of the Schottky diode. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body of the first conductivity type comprises: a heavily doped gallium nitride (GaN) layer of the first conductivity type; and a lightly doped gallium nitride (GaN) layer of the first conductivity type formed on the heavily doped GaN layer, wherein the first metal layer is formed on a top surface of the lightly doped GaN layer. Original
The Schottky diode of claim 19, wherein the comprises a first dielectric layer, the first dielectric first dielectric layer having a thinner thickness is Schottky diode. Original
The Schottky diode of claim 19, wherein the where the part of the epitaxial layer having a junction of the Schottky diode and the dielectric the nitride-based epitaxial layer. Original
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, the cathode nitride-based semiconductor body. Previously
The Schottky diode of claim 19, wherein the nitride-based semiconductor body, in an area termination structure. Previously presented nitride-based epitaxial layer forming the guard conductivity type and the dielectric field plate dielectric field plate of the termination structure layer has a step recess where the part of the disposed towards the Schottky junction of the nitride-based epitaxial layer has a step recess thinner thickness is disposed towards the Schottky field plate extends at most to the step recess of cathode electrode is formed on a backside of the electrode forming an ohmic contact with the presented cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the cathode electrode is formed on the front side of away from the anode electrode and the
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based Schottky diode with insulating substrate, guard ring, dielectric field plate, and junction barrier diodes
nitride-based Schottky diode with slant profile dielectric field plate and guard ring
Materials described outside the worked examples.
nitride-based semiconductor body
first metal layer (anode)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 14-1 cm | — |
nitride-based Schottky diode with dielectric field plate recessed from epitaxial layer end
nitride-based epitaxial layer of second conductivity type
heavily doped gallium nitride (GaN) layer
GaN
silicon nitride dielectric field plate
Si₃N₄
nitride-based Schottky diode with dielectric field plate recessed from epitaxial layer end
nitride-based epitaxial layer of second conductivity type
heavily doped gallium nitride (GaN) layer
GaN
silicon nitride dielectric field plate
Si₃N₄
nitride-based Schottky diode with dielectric field plate recessed from epitaxial layer end
nitride-based epitaxial layer of second conductivity type
heavily doped gallium nitride (GaN) layer
GaN
silicon nitride dielectric field plate
Si₃N₄
nitride-based Schottky diode with dielectric field plate recessed from epitaxial layer end
nitride-based epitaxial layer of second conductivity type
heavily doped gallium nitride (GaN) layer
GaN
silicon nitride dielectric field plate
Si₃N₄