Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Teppei Shintaku; Afsal Kareekunnan; Masashi Akabori; Kenji Watanabe; Takashi Taniguchi; Hiroshi Mizuta

doi:10.1002/apxr.202300064

Paper details

Research paper

Experimental CharacterizationComputational DFT

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Teppei Shintaku, Afsal Kareekunnan, Masashi Akabori, Kenji Watanabe et al.

arXiv·2023·10.1002/apxr.202300064·arXiv:2301.02358

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

1 preparation2 characterizations7 properties5 figures

ExperimentalCStudied MaterialBNStudied Material

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

1 preparation

ExperimentalCStudied MaterialBNStudied Material

Materials

bilayer graphene

Studied Material

Also known as

graphene bilayerBLG

Variables

layer_count= 2

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Mobility	holes	19000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Fet Mobility	electrons	26000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap	25meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	35.3meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	45.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	17.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap (calculated)	36meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Mobility	holes	19000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Fet Mobility	electrons	26000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap	25meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	35.3meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	45.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	17.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap (calculated)	36meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Mobility	holes	19000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Fet Mobility	electrons	26000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap	25meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	35.3meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	45.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	17.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap (calculated)	36meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Mobility	holes	19000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Fet Mobility	electrons	26000cm²/Vs	C	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap	25meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	35.3meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	45.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	band gap	17.5meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—
Band Gap	intrinsic band gap (calculated)	36meV	C BN	Device A: non-encapsulated hBN/bilayer graphene heterostruct	—

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Samples

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

Materials

Why these are connected

Processing

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