Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Teppei Shintaku; Afsal Kareekunnan; Masashi Akabori; Kenji Watanabe; Takashi Taniguchi; Hiroshi Mizuta

doi:10.1002/apxr.202300064

Paper

Atlas literature

Research paper

Experimental CharacterizationComputational DFT

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

Teppei Shintaku, Afsal Kareekunnan, Masashi Akabori, Kenji Watanabe et al.

arXiv·2023·10.1002/apxr.202300064·arXiv:2301.02358

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device A: non-encapsulated hBN/bilayer graphene heterostructure aligned at near-zero twist angle on SiO2, patterned into a Hall bar with edge contacts and a top hBN passivation layer.

1 preparation2 characterizations7 properties5 figures

ExperimentalCStudied MaterialBNStudied Material

Device B: second fabricated hBN/bilayer graphene heterostructure device mentioned in the paper.

1 preparation

ExperimentalCStudied MaterialBNStudied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle | Matter42 Literature