Research paper
Experimental CharacterizationFull-dry Flipping Transfer Method for van der Waals Heterostructure
Dohun Kim, Soyun Kim, Yanni Cho, Jaesung Lee et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties2 figures
1 preparation1 characterization4 properties2 figures
1 preparation1 characterization1 property1 figure
2 preparations1 characterization1 property1 figure
No measurements recorded
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Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Deformation-Driven Enhancement of Spin Defect Emission in Hexagonal Boron Nitride
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Proton transport through nanoscale corrugations in two-dimensional crystals
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties2 figures
1 preparation1 characterization4 properties2 figures
1 preparation1 characterization1 property1 figure
2 preparations1 characterization1 property1 figure
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Deformation-Driven Enhancement of Spin Defect Emission in Hexagonal Boron Nitride
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Proton transport through nanoscale corrugations in two-dimensional crystals
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties2 figures
1 preparation1 characterization4 properties2 figures
1 preparation1 characterization1 property1 figure
2 preparations1 characterization1 property1 figure
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Deformation-Driven Enhancement of Spin Defect Emission in Hexagonal Boron Nitride
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Proton transport through nanoscale corrugations in two-dimensional crystals
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation1 characterization2 properties2 figures
1 preparation1 characterization4 properties2 figures
1 preparation1 characterization1 property1 figure
2 preparations1 characterization1 property1 figure
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Deformation-Driven Enhancement of Spin Defect Emission in Hexagonal Boron Nitride
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Proton transport through nanoscale corrugations in two-dimensional crystals
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle