Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions

Sabin Park; Rai Moriya; Yijin Zhang; Kenji Watanabe; Takashi Taniguchi; Tomoki Machida

doi:10.1063/5.0242170

Paper

Atlas literature

Research paper

Experimental Characterization

Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions

Sabin Park, Rai Moriya, Yijin Zhang, Kenji Watanabe et al.

2024·10.1063/5.0242170·arXiv:2408.12501

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Asymmetric vertical vdW tunnel junction consisting of monolayer graphene / bilayer h-BN / bilayer graphene on 290-nm SiO₂ / p-doped Si back gate; h-BN thickness selected in the 30-50 nm range.

2 characterizations3 properties1 figure

ExperimentalCStudied MaterialBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

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