Research paper
Experimental CharacterizationComputational DFTUltra-sharp lateral p-n junctions in modulation-doped graphene
Jesse Balgley, Jackson Butler, Sananda Biswas, Zhehao Ge et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations1 property3 figures
3 characterizations1 property3 figures
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | charge-doping difference between g and mod sides | 3.2×10^12cm⁻² | — | |||
| Fet Carrier Concentration | charge transfer in hBN-spaced device | 1.5×10^12cm⁻² | — | |||
| Charge Transfer Distance | decay length from alpha-RuCl₃ edge | few graphene lattice constants | — |
Related documents with shared materials, methods, properties, or citations.
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On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations1 property3 figures
3 characterizations1 property3 figures
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | charge-doping difference between g and mod sides | 3.2×10^12cm⁻² | — | |||
| Fet Carrier Concentration | charge transfer in hBN-spaced device | 1.5×10^12cm⁻² | — | |||
| Charge Transfer Distance | decay length from alpha-RuCl₃ edge | few graphene lattice constants | — |
Related documents with shared materials, methods, properties, or citations.
Residual quantum coherent electron transport in doped graphene leads
Ferroelectricity in twisted double bilayer graphene
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Spectral signature of periodic modulation and sliding of pseudogap state in moiré system
Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Symmetry breaking of large-amplitude parametric oscillations in few-layer graphene nanomechanical resonators
Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
Plasmonic polarization sensing of electrostatic superlattice potentials
On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures
Net 582-Gb/s C-band and 4×526-Gb/s O-band IMDD Transmission Using Ultra-broadband InP-DHBT-based Electrical Mixer
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations1 property3 figures
3 characterizations1 property3 figures
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | charge-doping difference between g and mod sides | 3.2×10^12cm⁻² | — | |||
| Fet Carrier Concentration | charge transfer in hBN-spaced device | 1.5×10^12cm⁻² | — | |||
| Charge Transfer Distance | decay length from alpha-RuCl₃ edge | few graphene lattice constants | — |
Related documents with shared materials, methods, properties, or citations.
Residual quantum coherent electron transport in doped graphene leads
Ferroelectricity in twisted double bilayer graphene
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Spectral signature of periodic modulation and sliding of pseudogap state in moiré system
Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Symmetry breaking of large-amplitude parametric oscillations in few-layer graphene nanomechanical resonators
Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
Plasmonic polarization sensing of electrostatic superlattice potentials
On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures
Net 582-Gb/s C-band and 4×526-Gb/s O-band IMDD Transmission Using Ultra-broadband InP-DHBT-based Electrical Mixer
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations1 property3 figures
3 characterizations1 property3 figures
1 property
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | charge-doping difference between g and mod sides | 3.2×10^12cm⁻² | — | |||
| Fet Carrier Concentration | charge transfer in hBN-spaced device | 1.5×10^12cm⁻² | — | |||
| Charge Transfer Distance | decay length from alpha-RuCl₃ edge | few graphene lattice constants | — |
Related documents with shared materials, methods, properties, or citations.
Residual quantum coherent electron transport in doped graphene leads
Ferroelectricity in twisted double bilayer graphene
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Spectral signature of periodic modulation and sliding of pseudogap state in moiré system
Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Symmetry breaking of large-amplitude parametric oscillations in few-layer graphene nanomechanical resonators
Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
Plasmonic polarization sensing of electrostatic superlattice potentials
On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures
Net 582-Gb/s C-band and 4×526-Gb/s O-band IMDD Transmission Using Ultra-broadband InP-DHBT-based Electrical Mixer