Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.