Spin injection and detection in all-van der Waals 2D devices

Jan Bärenfänger; Klaus Zollner; Lukas Cvitkovich; Kenji Watanabe; Takashi Taniguchi; Stefan Hartl; Jaroslav Fabian; Jonathan Eroms; Dieter Weiss; Mariusz Ciorga

doi:10.1103/PhysRevB.98.054412

Paper details

Research paper

Experimental CharacterizationComputational DFT

Spin injection and detection in all-van der Waals 2D devices

Jan Bärenfänger, Klaus Zollner, Lukas Cvitkovich, Kenji Watanabe et al.

arXiv·2025·10.1103/PhysRevB.98.054412·arXiv:2503.02471

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

4 preparations3 characterizations9 properties3 figures

ExperimentalCStudied MaterialFe₃GeTe₂Studied MaterialhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricTiCapping Or ContactAuCapping Or Contact

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

4 preparations2 characterizations4 properties2 figures

ExperimentalCStudied MaterialFe₃GeTe₂Studied MaterialhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricTiCapping Or ContactAuCapping Or Contact

Materials

graphene

Studied Material

Also known as

monolayer graphene

Variables

dimensionality= 2D

studied material

Fe₃GeTe₂

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Spin injection and detection in all-van der Waals 2D devices | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN tunnel barrier thickness	0.9nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness range	0.9-1.3nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness	2layer	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Sheet Resistance	R₃T,0V	4.8kΩ	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Sheet Resistance	R₃T,0VA	95kΩ·µm2	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Mobility	mobility	11000cm²/Vs	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Threshold Voltage	CNP	-4V	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin injection efficiency	40%	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5µm	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5.6µm	C	Sample B all-vdW spin-injection device with the same materia	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN tunnel barrier thickness	0.9nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness range	0.9-1.3nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness	2layer	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Sheet Resistance	R₃T,0V	4.8kΩ	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Sheet Resistance	R₃T,0VA	95kΩ·µm2	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Mobility	mobility	11000cm²/Vs	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Threshold Voltage	CNP	-4V	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin injection efficiency	40%	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5µm	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5.6µm	C	Sample B all-vdW spin-injection device with the same materia	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN tunnel barrier thickness	0.9nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness range	0.9-1.3nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness	2layer	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Sheet Resistance	R₃T,0V	4.8kΩ	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Sheet Resistance	R₃T,0VA	95kΩ·µm2	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Mobility	mobility	11000cm²/Vs	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Threshold Voltage	CNP	-4V	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin injection efficiency	40%	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5µm	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5.6µm	C	Sample B all-vdW spin-injection device with the same materia	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	hBN tunnel barrier thickness	0.9nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness range	0.9-1.3nm	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Substrate Thickness	hBN thickness	2layer	SiO₂	Sample A all-vdW spin-injection device: monolayer graphene H Sample B all-vdW spin-injection device with the same materia	—
Sheet Resistance	R₃T,0V	4.8kΩ	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Sheet Resistance	R₃T,0VA	95kΩ·µm2	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Mobility	mobility	11000cm²/Vs	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Threshold Voltage	CNP	-4V	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin injection efficiency	40%	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5µm	C	Sample A all-vdW spin-injection device: monolayer graphene H	—
Fet Carrier Concentration	spin transport channel length d	5.6µm	C	Sample B all-vdW spin-injection device with the same materia	—

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Spin injection and detection in all-van der Waals 2D devices

Samples

Sample A all-vdW spin-injection device: monolayer graphene Hall bar with two top ferromagnetic FGT/hBN contacts, assembled on p++ Si/SiO₂ and contacted with Ti/Au.

Sample B all-vdW spin-injection device with the same materials stack as sample A but different FGT thicknesses and contact spacing.

Materials

Why these are connected

Processing

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