Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Pattern Feature Size | guiding map lateral size | 1.8mm | — | |||
| Pattern Feature Size | SiO₂ etch depth | 40nm | — | |||
| Active Area Size | device active area | <20 × 20µm × µm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Pattern Feature Size | guiding map lateral size | 1.8mm | — | |||
| Pattern Feature Size | SiO₂ etch depth | 40nm | — | |||
| Active Area Size | device active area | <20 × 20µm × µm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Pattern Feature Size | guiding map lateral size | 1.8mm | — | |||
| Pattern Feature Size | SiO₂ etch depth | 40nm | — | |||
| Active Area Size | device active area | <20 × 20µm × µm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Pattern Feature Size | guiding map lateral size | 1.8mm | — | |||
| Pattern Feature Size | SiO₂ etch depth | 40nm | — | |||
| Active Area Size | device active area | <20 × 20µm × µm | — |