Research paper
Experimental CharacterizationComputational Multiscale| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Etching Threshold Voltage | AC-LAO threshold | 5.5V | — | |||
| Feature Width | minimum etched linewidth | 23nm | — | |||
| Thickness | deposit thickness | 3nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Etching Threshold Voltage | AC-LAO threshold | 5.5V | — | |||
| Feature Width | minimum etched linewidth | 23nm | — | |||
| Thickness | deposit thickness | 3nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Etching Threshold Voltage | AC-LAO threshold | 5.5V | — | |||
| Feature Width | minimum etched linewidth | 23nm | — | |||
| Thickness | deposit thickness | 3nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Etching Threshold Voltage | AC-LAO threshold | 5.5V | — | |||
| Feature Width | minimum etched linewidth | 23nm | — | |||
| Thickness | deposit thickness | 3nm | — |