Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Pierce C. Sinnott; Majid Fazeli Jadidi; Graham L. W. Cross

doi:10.48550/arxiv.2606.30472

Paper details

Research paper

Experimental Characterization

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Pierce C. Sinnott, Majid Fazeli Jadidi, Graham L. W. Cross

2025·arXiv:2606.30472

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

2 preparations1 characterization8 properties3 figures

ExperimentalCStudied Material

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

1 preparation1 characterization1 property3 figures

ExperimentalMoS₂Studied Material

Materials

Graphene

Studied Material

Also known as

graphene sheetgraphene flakesfew-layer graphene

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ layer thickness	300nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S MoS₂ sample mentioned as showing limited nucleation under ha	—
Substrate Deformation Depth	plastic deformation depth	0.5nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Radius	Hertzian contact radius	5-6nm	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Pressure	peak contact pressure	10-20GPa	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Time	time in contact per tap	0.11ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Tap Period	tap period	0.51ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Activation Volume	activation volume	0.015nm³	C	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Elastic Energy Per Tap	stored elastic energy per tap	104eV	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ layer thickness	300nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S MoS₂ sample mentioned as showing limited nucleation under ha	—
Substrate Deformation Depth	plastic deformation depth	0.5nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Radius	Hertzian contact radius	5-6nm	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Pressure	peak contact pressure	10-20GPa	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Time	time in contact per tap	0.11ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Tap Period	tap period	0.51ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Activation Volume	activation volume	0.015nm³	C	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Elastic Energy Per Tap	stored elastic energy per tap	104eV	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ layer thickness	300nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S MoS₂ sample mentioned as showing limited nucleation under ha	—
Substrate Deformation Depth	plastic deformation depth	0.5nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Radius	Hertzian contact radius	5-6nm	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Pressure	peak contact pressure	10-20GPa	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Time	time in contact per tap	0.11ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Tap Period	tap period	0.51ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Activation Volume	activation volume	0.015nm³	C	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Elastic Energy Per Tap	stored elastic energy per tap	104eV	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ layer thickness	300nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S MoS₂ sample mentioned as showing limited nucleation under ha	—
Substrate Deformation Depth	plastic deformation depth	0.5nm	SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Radius	Hertzian contact radius	5-6nm	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Pressure	peak contact pressure	10-20GPa	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Contact Time	time in contact per tap	0.11ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Tap Period	tap period	0.51ms	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Activation Volume	activation volume	0.015nm³	C	Few-layer mechanically exfoliated graphene flake on 300 nm S	—
Elastic Energy Per Tap	stored elastic energy per tap	104eV	C SiO₂	Few-layer mechanically exfoliated graphene flake on 300 nm S	—

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Mechanical Manipulation of Graphene Auto-Kirigami with an AFM tip

Samples

Few-layer mechanically exfoliated graphene flake on 300 nm SiO₂/Si substrate used for AFM indentation and hard tapping to nucleate auto-kirigami ribbons.

MoS₂ sample mentioned as showing limited nucleation under hard tapping.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

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