Research paperExperimental CharacterizationEnhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS₂ DevicesQiao Chen, Chengyu Yan, Changshuai Lan, Qiyang Song et al.2025·10.1002/smll.202501428·arXiv:2504.18170AbstractThe periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.Read more
Dual-gated ionic-liquid MoS₂ Hall-bar device with 10 nm MoS₂ thickness measured with ionic liquid top gate and heavily doped Si backgate.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ Hall-bar devices with varying thickness used to compare back-tunneling and carrier-density tunability under ionic-liquid gating.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationEnhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS₂ DevicesQiao Chen, Chengyu Yan, Changshuai Lan, Qiyang Song et al.2025·10.1002/smll.202501428·arXiv:2504.18170AbstractThe periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.Read more
Dual-gated ionic-liquid MoS₂ Hall-bar device with 10 nm MoS₂ thickness measured with ionic liquid top gate and heavily doped Si backgate.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ Hall-bar devices with varying thickness used to compare back-tunneling and carrier-density tunability under ionic-liquid gating.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationEnhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS₂ DevicesQiao Chen, Chengyu Yan, Changshuai Lan, Qiyang Song et al.2025·10.1002/smll.202501428·arXiv:2504.18170AbstractThe periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.Read more
Dual-gated ionic-liquid MoS₂ Hall-bar device with 10 nm MoS₂ thickness measured with ionic liquid top gate and heavily doped Si backgate.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ Hall-bar devices with varying thickness used to compare back-tunneling and carrier-density tunability under ionic-liquid gating.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationEnhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS₂ DevicesQiao Chen, Chengyu Yan, Changshuai Lan, Qiyang Song et al.2025·10.1002/smll.202501428·arXiv:2504.18170AbstractThe periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.Read more
Dual-gated ionic-liquid MoS₂ Hall-bar device with 10 nm MoS₂ thickness measured with ionic liquid top gate and heavily doped Si backgate.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ Hall-bar devices with varying thickness used to compare back-tunneling and carrier-density tunability under ionic-liquid gating.1 characterization2 figuresExperimentalMoS₂Studied MaterialExpand