Research paperExperimental CharacterizationComputational DFTComputed PhononDirect view of phonon dynamics in atomically thin MoS₂Tristan L Britt, Qiuyang Li, Laurent P. René de Cotret, Nicholas Olsen et al.arXiv·2022·10.1021/acs.nanolett.2c00850·arXiv:2205.07672AbstractWe apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling in monolayer molybdenum disulfide (MoS₂) and phonon transport from the monolayer to a silicon nitride (Si₃N₄) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the ~5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening electron-phonon coupling. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium.Read more
Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.1 characterization2 figuresExperimentalMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.2 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.2 propertiesSimulated Supercell DftMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed PhononDirect view of phonon dynamics in atomically thin MoS₂Tristan L Britt, Qiuyang Li, Laurent P. René de Cotret, Nicholas Olsen et al.arXiv·2022·10.1021/acs.nanolett.2c00850·arXiv:2205.07672AbstractWe apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling in monolayer molybdenum disulfide (MoS₂) and phonon transport from the monolayer to a silicon nitride (Si₃N₄) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the ~5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening electron-phonon coupling. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium.Read more
Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.1 characterization2 figuresExperimentalMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.2 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.2 propertiesSimulated Supercell DftMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed PhononDirect view of phonon dynamics in atomically thin MoS₂Tristan L Britt, Qiuyang Li, Laurent P. René de Cotret, Nicholas Olsen et al.arXiv·2022·10.1021/acs.nanolett.2c00850·arXiv:2205.07672AbstractWe apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling in monolayer molybdenum disulfide (MoS₂) and phonon transport from the monolayer to a silicon nitride (Si₃N₄) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the ~5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening electron-phonon coupling. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium.Read more
Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.1 characterization2 figuresExperimentalMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.2 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.2 propertiesSimulated Supercell DftMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed PhononDirect view of phonon dynamics in atomically thin MoS₂Tristan L Britt, Qiuyang Li, Laurent P. René de Cotret, Nicholas Olsen et al.arXiv·2022·10.1021/acs.nanolett.2c00850·arXiv:2205.07672AbstractWe apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling in monolayer molybdenum disulfide (MoS₂) and phonon transport from the monolayer to a silicon nitride (Si₃N₄) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the ~5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening electron-phonon coupling. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium.Read more
Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.1 characterization2 figuresExperimentalMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand
Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.2 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.2 propertiesSimulated Supercell DftMoS₂Studied MaterialSi₃N₄Substrate / DielectricExpand