Direct view of phonon dynamics in atomically thin MoS2

Tristan L Britt; Qiuyang Li; Laurent P. René de Cotret; Nicholas Olsen; Martin Otto; Syed Ali Hassan; Marios Zacharias; Fabio Caruso; Xiaoyang Zhu; Bradley J Siwick

doi:10.1021/acs.nanolett.2c00850

Paper details

Research paper

Experimental CharacterizationComputational DFTComputed Phonon

Direct view of phonon dynamics in atomically thin MoS₂

Tristan L Britt, Qiuyang Li, Laurent P. René de Cotret, Nicholas Olsen et al.

arXiv·2022·10.1021/acs.nanolett.2c00850·arXiv:2205.07672

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

1 characterization2 figures

ExperimentalMoS₂Studied MaterialSi₃N₄Substrate / Dielectric

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

2 properties

Simulated Supercell DftMoS₂Studied Material

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

2 properties

Simulated Supercell DftMoS₂Studied MaterialSi₃N₄Substrate / Dielectric

Materials

MoS₂

Studied Material

Also known as

monolayer MoS₂1L-MoS₂

studied material

silicon nitride

Si₃N₄

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Direct view of phonon dynamics in atomically thin MoS2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	epsilon_infty	7.8	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Screening Factor	epsilon_sub_infty	4.4	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Electron Phonon Coupling Matrix Element	LA phonon mode at K	19meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—
Electron Phonon Coupling Matrix Element	LO (E') phonon mode at K	23meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	epsilon_infty	7.8	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Screening Factor	epsilon_sub_infty	4.4	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Electron Phonon Coupling Matrix Element	LA phonon mode at K	19meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—
Electron Phonon Coupling Matrix Element	LO (E') phonon mode at K	23meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	epsilon_infty	7.8	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Screening Factor	epsilon_sub_infty	4.4	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Electron Phonon Coupling Matrix Element	LA phonon mode at K	19meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—
Electron Phonon Coupling Matrix Element	LO (E') phonon mode at K	23meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—

Properties

Type	Label	Value	Material	Sample	Source
Dielectric Constant	epsilon_infty	7.8	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Screening Factor	epsilon_sub_infty	4.4	Si₃N₄	Monolayer MoS₂ with dielectric environment from a semi-infin	—
Electron Phonon Coupling Matrix Element	LA phonon mode at K	19meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—
Electron Phonon Coupling Matrix Element	LO (E') phonon mode at K	23meV	MoS₂	Free-standing monolayer MoS₂ used as the ab-initio reference	—

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Direct view of phonon dynamics in atomically thin MoS₂

Samples

Monolayer MoS₂ on a silicon nitride substrate heterostructure probed by ultrafast electron diffraction and diffuse scattering.

Free-standing monolayer MoS₂ used as the ab-initio reference system for ultrafast dynamics calculations.

Monolayer MoS₂ with dielectric environment from a semi-infinite silicon nitride slab model used in the ab-initio comparison to experiment.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations