Patent
US 9,431,573METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MoS₂ SCHOTTKY JUNCTIONS
Makarand Paranjape
US
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Patent
Atlas literature
Patent
US 9,431,573Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-layer of M o S₂ on a substrate capped with an insulating layer; and sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect.
The process of claim 1, wherein forming the source contact further includes forming a first adhesion layer on the substrate and depositing the at least a first material including palladium (Pd) on the first adhesion layer.
The process of claim 1, wherein the substrate is formed of a flexible polymer.
The process of claim 1, further comprising forming a reflective material on 2 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ the substrate prior to forming the single-layer of M o S₂ on the substrate, wherein the reflective material is formed between the single-layer of M o S₂ and the substrate.
The process of claim 1, further comprising forming the source contact and the drain contact such that a distance therebetween is shorter than an electron-hole recombination length of the device.
The process of claim 1, further comprising forming multiple individual photovoltaic devices on the substrate, each of the multiple individual photovoltaic devices including a single-layer of M o S₂ and a single source contact and a single drain contact.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-laver of MoS₂ on a substrate capped with an insulating laver and sputtering a source contact comprised of at least a first material including palladium SVG 14295592.04-11-2016.IMYQDDNEPXXIFW1.CLM.2.22.300.2720.2250.2766.svg 0.153 6.50 Chemistry Black and white substrate and in contact with first and second ends of the channel, wherein Schottky j unctions are formed at an interface of at least one of the source and drain contacts and the 3 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ channel exhibiting a photovoltaic effect The process of claim 1, wherein forming the channel comprises exfoliating flakes of M o S₂ onto doped silicon (Si).
-32. canceled
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ photovoltaic Schottky junction device
Materials described outside the worked examples.
MoS₂ single-layer
MoS₂
palladium
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
direct bandgap of single-layer MoS2 | 1.9 eV | MoS₂ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,573Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-layer of M o S₂ on a substrate capped with an insulating layer; and sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect.
The process of claim 1, wherein forming the source contact further includes forming a first adhesion layer on the substrate and depositing the at least a first material including palladium (Pd) on the first adhesion layer.
The process of claim 1, wherein the substrate is formed of a flexible polymer.
The process of claim 1, further comprising forming a reflective material on 2 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ the substrate prior to forming the single-layer of M o S₂ on the substrate, wherein the reflective material is formed between the single-layer of M o S₂ and the substrate.
The process of claim 1, further comprising forming the source contact and the drain contact such that a distance therebetween is shorter than an electron-hole recombination length of the device.
The process of claim 1, further comprising forming multiple individual photovoltaic devices on the substrate, each of the multiple individual photovoltaic devices including a single-layer of M o S₂ and a single source contact and a single drain contact.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-laver of MoS₂ on a substrate capped with an insulating laver and sputtering a source contact comprised of at least a first material including palladium SVG 14295592.04-11-2016.IMYQDDNEPXXIFW1.CLM.2.22.300.2720.2250.2766.svg 0.153 6.50 Chemistry Black and white substrate and in contact with first and second ends of the channel, wherein Schottky j unctions are formed at an interface of at least one of the source and drain contacts and the 3 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ channel exhibiting a photovoltaic effect The process of claim 1, wherein forming the channel comprises exfoliating flakes of M o S₂ onto doped silicon (Si).
-32. canceled
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ photovoltaic Schottky junction device
Materials described outside the worked examples.
MoS₂ single-layer
MoS₂
palladium
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
direct bandgap of single-layer MoS2 | 1.9 eV | MoS₂ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,573Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-layer of M o S₂ on a substrate capped with an insulating layer; and sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect.
The process of claim 1, wherein forming the source contact further includes forming a first adhesion layer on the substrate and depositing the at least a first material including palladium (Pd) on the first adhesion layer.
The process of claim 1, wherein the substrate is formed of a flexible polymer.
The process of claim 1, further comprising forming a reflective material on 2 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ the substrate prior to forming the single-layer of M o S₂ on the substrate, wherein the reflective material is formed between the single-layer of M o S₂ and the substrate.
The process of claim 1, further comprising forming the source contact and the drain contact such that a distance therebetween is shorter than an electron-hole recombination length of the device.
The process of claim 1, further comprising forming multiple individual photovoltaic devices on the substrate, each of the multiple individual photovoltaic devices including a single-layer of M o S₂ and a single source contact and a single drain contact.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-laver of MoS₂ on a substrate capped with an insulating laver and sputtering a source contact comprised of at least a first material including palladium SVG 14295592.04-11-2016.IMYQDDNEPXXIFW1.CLM.2.22.300.2720.2250.2766.svg 0.153 6.50 Chemistry Black and white substrate and in contact with first and second ends of the channel, wherein Schottky j unctions are formed at an interface of at least one of the source and drain contacts and the 3 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ channel exhibiting a photovoltaic effect The process of claim 1, wherein forming the channel comprises exfoliating flakes of M o S₂ onto doped silicon (Si).
-32. canceled
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ photovoltaic Schottky junction device
Materials described outside the worked examples.
MoS₂ single-layer
MoS₂
palladium
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
direct bandgap of single-layer MoS2 | 1.9 eV | MoS₂ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,573Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-layer of M o S₂ on a substrate capped with an insulating layer; and sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect.
The process of claim 1, wherein forming the source contact further includes forming a first adhesion layer on the substrate and depositing the at least a first material including palladium (Pd) on the first adhesion layer.
The process of claim 1, wherein the substrate is formed of a flexible polymer.
The process of claim 1, further comprising forming a reflective material on 2 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ the substrate prior to forming the single-layer of M o S₂ on the substrate, wherein the reflective material is formed between the single-layer of M o S₂ and the substrate.
The process of claim 1, further comprising forming the source contact and the drain contact such that a distance therebetween is shorter than an electron-hole recombination length of the device.
The process of claim 1, further comprising forming multiple individual photovoltaic devices on the substrate, each of the multiple individual photovoltaic devices including a single-layer of M o S₂ and a single source contact and a single drain contact.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising: forming a channel comprising a single-laver of MoS₂ on a substrate capped with an insulating laver and sputtering a source contact comprised of at least a first material including palladium SVG 14295592.04-11-2016.IMYQDDNEPXXIFW1.CLM.2.22.300.2720.2250.2766.svg 0.153 6.50 Chemistry Black and white substrate and in contact with first and second ends of the channel, wherein Schottky j unctions are formed at an interface of at least one of the source and drain contacts and the 3 Serial No. 14/295,592 Docket No. GU 000 7-CON₁ channel exhibiting a photovoltaic effect The process of claim 1, wherein forming the channel comprises exfoliating flakes of M o S₂ onto doped silicon (Si).
-32. canceled
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ photovoltaic Schottky junction device
Materials described outside the worked examples.
MoS₂ single-layer
MoS₂
palladium
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
direct bandgap of single-layer MoS2 | 1.9 eV | MoS₂ |
Related documents with shared materials, methods, properties, or citations.
gold
Au
niobium
Nb
chromium
Cr
titanium
Ti
flexible polymer substrate
reflective material
doped silicon
Si
silicon dioxide insulating layer
SiO₂
Nb(2nm)/Pd(100nm) electrode stack
Cr(2nm)/Au(100nm) electrode stack
| 100000000 |
MoS₂ |
electron mobility for MoS2 FET with HfO2 gate oxide | 200 cm2 V-1 s-1 | MoS₂ |
Thickness | 0.5–100 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 10 cm | — |
gold
Au
niobium
Nb
chromium
Cr
titanium
Ti
flexible polymer substrate
reflective material
doped silicon
Si
silicon dioxide insulating layer
SiO₂
Nb(2nm)/Pd(100nm) electrode stack
Cr(2nm)/Au(100nm) electrode stack
| 100000000 |
MoS₂ |
electron mobility for MoS2 FET with HfO2 gate oxide | 200 cm2 V-1 s-1 | MoS₂ |
Thickness | 0.5–100 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 10 cm | — |
gold
Au
niobium
Nb
chromium
Cr
titanium
Ti
flexible polymer substrate
reflective material
doped silicon
Si
silicon dioxide insulating layer
SiO₂
Nb(2nm)/Pd(100nm) electrode stack
Cr(2nm)/Au(100nm) electrode stack
| 100000000 |
MoS₂ |
electron mobility for MoS2 FET with HfO2 gate oxide | 200 cm2 V-1 s-1 | MoS₂ |
Thickness | 0.5–100 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 10 cm | — |
gold
Au
niobium
Nb
chromium
Cr
titanium
Ti
flexible polymer substrate
reflective material
doped silicon
Si
silicon dioxide insulating layer
SiO₂
Nb(2nm)/Pd(100nm) electrode stack
Cr(2nm)/Au(100nm) electrode stack
| 100000000 |
MoS₂ |
electron mobility for MoS2 FET with HfO2 gate oxide | 200 cm2 V-1 s-1 | MoS₂ |
Thickness | 0.5–100 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 10 cm | — |