Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with memristors in non-volatile memory and radio frequency (RF) applications. However, the physical mechanisms behind their resistive switching, particularly the formation and resorption of conducting filaments, remain unclear. In this study, we present a novel mechanical exfoliation technique that selectively removes the top metallic electrode from MoS₂-based memristors by exploiting the weak van der Waals interaction between MoS₂ and the top electrode. This method enables direct and multi-scale characterization of the MoS₂ surface in different states (initial, ON and OFF) using Kelvin Probe Force Microscopy (KPFM) and Raman spectroscopy mapping. To complete this study, cross-sectional Transmission Electron Microscopy (TEM) was also performed in different conductive states. Our results reveal that the conducting filament is formed by metallic atom migration from the top electrode into the MoS₂ layer. Additionally, we demonstrate that the choice of metallic electrodes (gold vs. nickel) significantly impacts the switching behavior due to differences in adsorption and diffusion energies. This work not only clarifies the filament formation mechanism and introduces a reproducible approach for in-operando characterization but also represents a real progress in the understanding and optimization of 2D material-based memristors.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with memristors in non-volatile memory and radio frequency (RF) applications. However, the physical mechanisms behind their resistive switching, particularly the formation and resorption of conducting filaments, remain unclear. In this study, we present a novel mechanical exfoliation technique that selectively removes the top metallic electrode from MoS₂-based memristors by exploiting the weak van der Waals interaction between MoS₂ and the top electrode. This method enables direct and multi-scale characterization of the MoS₂ surface in different states (initial, ON and OFF) using Kelvin Probe Force Microscopy (KPFM) and Raman spectroscopy mapping. To complete this study, cross-sectional Transmission Electron Microscopy (TEM) was also performed in different conductive states. Our results reveal that the conducting filament is formed by metallic atom migration from the top electrode into the MoS₂ layer. Additionally, we demonstrate that the choice of metallic electrodes (gold vs. nickel) significantly impacts the switching behavior due to differences in adsorption and diffusion energies. This work not only clarifies the filament formation mechanism and introduces a reproducible approach for in-operando characterization but also represents a real progress in the understanding and optimization of 2D material-based memristors.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with memristors in non-volatile memory and radio frequency (RF) applications. However, the physical mechanisms behind their resistive switching, particularly the formation and resorption of conducting filaments, remain unclear. In this study, we present a novel mechanical exfoliation technique that selectively removes the top metallic electrode from MoS₂-based memristors by exploiting the weak van der Waals interaction between MoS₂ and the top electrode. This method enables direct and multi-scale characterization of the MoS₂ surface in different states (initial, ON and OFF) using Kelvin Probe Force Microscopy (KPFM) and Raman spectroscopy mapping. To complete this study, cross-sectional Transmission Electron Microscopy (TEM) was also performed in different conductive states. Our results reveal that the conducting filament is formed by metallic atom migration from the top electrode into the MoS₂ layer. Additionally, we demonstrate that the choice of metallic electrodes (gold vs. nickel) significantly impacts the switching behavior due to differences in adsorption and diffusion energies. This work not only clarifies the filament formation mechanism and introduces a reproducible approach for in-operando characterization but also represents a real progress in the understanding and optimization of 2D material-based memristors.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with memristors in non-volatile memory and radio frequency (RF) applications. However, the physical mechanisms behind their resistive switching, particularly the formation and resorption of conducting filaments, remain unclear. In this study, we present a novel mechanical exfoliation technique that selectively removes the top metallic electrode from MoS₂-based memristors by exploiting the weak van der Waals interaction between MoS₂ and the top electrode. This method enables direct and multi-scale characterization of the MoS₂ surface in different states (initial, ON and OFF) using Kelvin Probe Force Microscopy (KPFM) and Raman spectroscopy mapping. To complete this study, cross-sectional Transmission Electron Microscopy (TEM) was also performed in different conductive states. Our results reveal that the conducting filament is formed by metallic atom migration from the top electrode into the MoS₂ layer. Additionally, we demonstrate that the choice of metallic electrodes (gold vs. nickel) significantly impacts the switching behavior due to differences in adsorption and diffusion energies. This work not only clarifies the filament formation mechanism and introduces a reproducible approach for in-operando characterization but also represents a real progress in the understanding and optimization of 2D material-based memristors.