Research paper
Experimental CharacterizationComputational DFTTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | twist angle | 12.5deg | — | |||
| Fet On Off Ratio | electronic ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet Threshold Voltage | hydrogenation reversal field threshold | 0.5V nm⁻¹ | — | |||
| Fet Carrier Concentration | total charge density n | 50000000000000cm⁻² | — | |||
| Fet Carrier Concentration | hydrogenation threshold charge density | 100000000000000cm⁻² | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | twist angle | 12.5deg | — | |||
| Fet On Off Ratio | electronic ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet Threshold Voltage | hydrogenation reversal field threshold | 0.5V nm⁻¹ | — | |||
| Fet Carrier Concentration | total charge density n | 50000000000000cm⁻² | — | |||
| Fet Carrier Concentration | hydrogenation threshold charge density | 100000000000000cm⁻² | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | twist angle | 12.5deg | — | |||
| Fet On Off Ratio | electronic ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet Threshold Voltage | hydrogenation reversal field threshold | 0.5V nm⁻¹ | — | |||
| Fet Carrier Concentration | total charge density n | 50000000000000cm⁻² | — | |||
| Fet Carrier Concentration | hydrogenation threshold charge density | 100000000000000cm⁻² | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Twist Angle | twist angle | 12.5deg | — | |||
| Fet On Off Ratio | electronic ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet On Off Ratio | logic-gate ON/OFF ratio | 104 | — | |||
| Fet Threshold Voltage | hydrogenation reversal field threshold | 0.5V nm⁻¹ | — | |||
| Fet Carrier Concentration | total charge density n | 50000000000000cm⁻² | — | |||
| Fet Carrier Concentration | hydrogenation threshold charge density | 100000000000000cm⁻² | — |