Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 figure
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 6.5nm | — | |||
| Lateral Dimension | average lateral dimension | 0.93um | — | |||
| Substrate Thickness | flake thickness | 2.86nm | — | |||
| Lateral Dimension | average lateral dimension | 0.56um | — | |||
| Fet On Off Ratio | TPA coefficient | 3910cm/GW | — | |||
| Fet On Off Ratio | TPA coefficient | 694000cm/GW | — | |||
| Fet Threshold Voltage | optical limiting threshold | 1.46mJ/cm² | — | |||
| Count Predicted 2d Candidates | DFT qualitative result | mid-gap states enhanced by defect engineering | — | |||
| Xrd Lattice Constant A | lattice constant a | 5.18Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.27Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.24Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 19.79Å | — | — | — | — |
| Ir Band Position | IR band | 600cm⁻¹ | — | — | — | |
| Optical Band Gap | band gap | 4.16eV | — | — | — | |
| Optical Band Gap | band gap | 4.54eV | — | — | — | |
| Optical Band Gap | band gap | 3.96eV | — | — | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 figure
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 6.5nm | — | |||
| Lateral Dimension | average lateral dimension | 0.93um | — | |||
| Substrate Thickness | flake thickness | 2.86nm | — | |||
| Lateral Dimension | average lateral dimension | 0.56um | — | |||
| Fet On Off Ratio | TPA coefficient | 3910cm/GW | — | |||
| Fet On Off Ratio | TPA coefficient | 694000cm/GW | — | |||
| Fet Threshold Voltage | optical limiting threshold | 1.46mJ/cm² | — | |||
| Count Predicted 2d Candidates | DFT qualitative result | mid-gap states enhanced by defect engineering | — | |||
| Xrd Lattice Constant A | lattice constant a | 5.18Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.27Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.24Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 19.79Å | — | — | — | — |
| Ir Band Position | IR band | 600cm⁻¹ | — | — | — | |
| Optical Band Gap | band gap | 4.16eV | — | — | — | |
| Optical Band Gap | band gap | 4.54eV | — | — | — | |
| Optical Band Gap | band gap | 3.96eV | — | — | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 figure
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 6.5nm | — | |||
| Lateral Dimension | average lateral dimension | 0.93um | — | |||
| Substrate Thickness | flake thickness | 2.86nm | — | |||
| Lateral Dimension | average lateral dimension | 0.56um | — | |||
| Fet On Off Ratio | TPA coefficient | 3910cm/GW | — | |||
| Fet On Off Ratio | TPA coefficient | 694000cm/GW | — | |||
| Fet Threshold Voltage | optical limiting threshold | 1.46mJ/cm² | — | |||
| Count Predicted 2d Candidates | DFT qualitative result | mid-gap states enhanced by defect engineering | — | |||
| Xrd Lattice Constant A | lattice constant a | 5.18Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.27Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.24Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 19.79Å | — | — | — | — |
| Ir Band Position | IR band | 600cm⁻¹ | — | — | — | |
| Optical Band Gap | band gap | 4.16eV | — | — | — | |
| Optical Band Gap | band gap | 4.54eV | — | — | — | |
| Optical Band Gap | band gap | 3.96eV | — | — | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 figure
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations3 properties3 figures
2 preparations10 characterizations4 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 6.5nm | — | |||
| Lateral Dimension | average lateral dimension | 0.93um | — | |||
| Substrate Thickness | flake thickness | 2.86nm | — | |||
| Lateral Dimension | average lateral dimension | 0.56um | — | |||
| Fet On Off Ratio | TPA coefficient | 3910cm/GW | — | |||
| Fet On Off Ratio | TPA coefficient | 694000cm/GW | — | |||
| Fet Threshold Voltage | optical limiting threshold | 1.46mJ/cm² | — | |||
| Count Predicted 2d Candidates | DFT qualitative result | mid-gap states enhanced by defect engineering | — | |||
| Xrd Lattice Constant A | lattice constant a | 5.18Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.27Å | — | — | — | — |
| Xrd Lattice Constant A | lattice constant a | 5.24Å | — | — | — | — |
| Xrd Lattice Constant C | lattice constant c | 19.79Å | — | — | — | — |
| Ir Band Position | IR band | 600cm⁻¹ | — | — | — | |
| Optical Band Gap | band gap | 4.16eV | — | — | — | |
| Optical Band Gap | band gap | 4.54eV | — | — | — | |
| Optical Band Gap | band gap | 3.96eV | — | — | — |
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