Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations9 properties4 figures
1 preparation3 characterizations9 properties12 figures
1 preparation1 characterization1 property10 figures
2 preparations1 characterization2 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Lateral Size | flake lateral size | 42nm | — | |||
| Afm Thickness | flake thickness | 2.6nm | — | |||
| Absorption Peak | A exciton | 670nm | — | |||
| Absorption Peak | B exciton | 615nm | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229eV | — | — | ||
| Xps Binding Energy | Mo 3d3/2 | 232.2eV | — | — | ||
| Xps Binding Energy | S 2p1/2 | 163eV | — | — | ||
| Xps Binding Energy | S 2p3/2 | 161.8eV | — | — | ||
| Stoichiometric Ratio | Mo/S ratio | 1:1.83 | — | |||
| Printing Accuracy | pattern fidelity | 98% | — | |||
| Active Layer Thickness | active layer thickness | 500nm | — | |||
| Device Yield | 30-layer device yield | 93% | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.29V | — | |||
| Fet Threshold Voltage | RESET voltage | -0.44V | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.4V | — | |||
| Power Consumption | switching power consumption | 50pW | — | |||
| Fet Threshold Voltage | SET voltage | 0.3V | — | |||
| Fet Threshold Voltage | forming voltage | 9V | — | |||
| Fet Threshold Voltage | operational voltage after recycling | 0.65V | — |
Related documents with shared materials, methods, properties, or citations.
A new method to probe conducting filaments in MoS2-based memristors
Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Thickness-dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
Production of Ultra-Thin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MOS2 SCHOTTKY JUNCTIONS
Interfacial properties of MoS2 thin films grown on functional substrates
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations9 properties4 figures
1 preparation3 characterizations9 properties12 figures
1 preparation1 characterization1 property10 figures
2 preparations1 characterization2 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Lateral Size | flake lateral size | 42nm | — | |||
| Afm Thickness | flake thickness | 2.6nm | — | |||
| Absorption Peak | A exciton | 670nm | — | |||
| Absorption Peak | B exciton | 615nm | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229eV | — | — | ||
| Xps Binding Energy | Mo 3d3/2 | 232.2eV | — | — | ||
| Xps Binding Energy | S 2p1/2 | 163eV | — | — | ||
| Xps Binding Energy | S 2p3/2 | 161.8eV | — | — | ||
| Stoichiometric Ratio | Mo/S ratio | 1:1.83 | — | |||
| Printing Accuracy | pattern fidelity | 98% | — | |||
| Active Layer Thickness | active layer thickness | 500nm | — | |||
| Device Yield | 30-layer device yield | 93% | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.29V | — | |||
| Fet Threshold Voltage | RESET voltage | -0.44V | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.4V | — | |||
| Power Consumption | switching power consumption | 50pW | — | |||
| Fet Threshold Voltage | SET voltage | 0.3V | — | |||
| Fet Threshold Voltage | forming voltage | 9V | — | |||
| Fet Threshold Voltage | operational voltage after recycling | 0.65V | — |
Related documents with shared materials, methods, properties, or citations.
A new method to probe conducting filaments in MoS2-based memristors
Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Thickness-dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
Production of Ultra-Thin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MOS2 SCHOTTKY JUNCTIONS
Interfacial properties of MoS2 thin films grown on functional substrates
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations9 properties4 figures
1 preparation3 characterizations9 properties12 figures
1 preparation1 characterization1 property10 figures
2 preparations1 characterization2 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Lateral Size | flake lateral size | 42nm | — | |||
| Afm Thickness | flake thickness | 2.6nm | — | |||
| Absorption Peak | A exciton | 670nm | — | |||
| Absorption Peak | B exciton | 615nm | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229eV | — | — | ||
| Xps Binding Energy | Mo 3d3/2 | 232.2eV | — | — | ||
| Xps Binding Energy | S 2p1/2 | 163eV | — | — | ||
| Xps Binding Energy | S 2p3/2 | 161.8eV | — | — | ||
| Stoichiometric Ratio | Mo/S ratio | 1:1.83 | — | |||
| Printing Accuracy | pattern fidelity | 98% | — | |||
| Active Layer Thickness | active layer thickness | 500nm | — | |||
| Device Yield | 30-layer device yield | 93% | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.29V | — | |||
| Fet Threshold Voltage | RESET voltage | -0.44V | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.4V | — | |||
| Power Consumption | switching power consumption | 50pW | — | |||
| Fet Threshold Voltage | SET voltage | 0.3V | — | |||
| Fet Threshold Voltage | forming voltage | 9V | — | |||
| Fet Threshold Voltage | operational voltage after recycling | 0.65V | — |
Related documents with shared materials, methods, properties, or citations.
A new method to probe conducting filaments in MoS2-based memristors
Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Thickness-dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
Production of Ultra-Thin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MOS2 SCHOTTKY JUNCTIONS
Interfacial properties of MoS2 thin films grown on functional substrates
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations9 properties4 figures
1 preparation3 characterizations9 properties12 figures
1 preparation1 characterization1 property10 figures
2 preparations1 characterization2 properties10 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Afm Lateral Size | flake lateral size | 42nm | — | |||
| Afm Thickness | flake thickness | 2.6nm | — | |||
| Absorption Peak | A exciton | 670nm | — | |||
| Absorption Peak | B exciton | 615nm | — | |||
| Xps Binding Energy | Mo 3d5/2 | 229eV | — | — | ||
| Xps Binding Energy | Mo 3d3/2 | 232.2eV | — | — | ||
| Xps Binding Energy | S 2p1/2 | 163eV | — | — | ||
| Xps Binding Energy | S 2p3/2 | 161.8eV | — | — | ||
| Stoichiometric Ratio | Mo/S ratio | 1:1.83 | — | |||
| Printing Accuracy | pattern fidelity | 98% | — | |||
| Active Layer Thickness | active layer thickness | 500nm | — | |||
| Device Yield | 30-layer device yield | 93% | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.29V | — | |||
| Fet Threshold Voltage | RESET voltage | -0.44V | — | |||
| Fet On Off Ratio | ON-OFF ratio | 105 | — | |||
| Fet Threshold Voltage | SET voltage | 0.4V | — | |||
| Power Consumption | switching power consumption | 50pW | — | |||
| Fet Threshold Voltage | SET voltage | 0.3V | — | |||
| Fet Threshold Voltage | forming voltage | 9V | — | |||
| Fet Threshold Voltage | operational voltage after recycling | 0.65V | — |
Related documents with shared materials, methods, properties, or citations.
A new method to probe conducting filaments in MoS2-based memristors
Chiral two-dimensional MoS2 by molecular functionalization as ultra-sensitive detectors for circularly polarized light
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Thickness-dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Depletion-to-Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs
Production of Ultra-Thin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
METHOD AND SYSTEM FOR GENERATING A PHOTO-RESPONSE FROM MOS2 SCHOTTKY JUNCTIONS
Interfacial properties of MoS2 thin films grown on functional substrates
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