Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations1 characterization5 properties1 figure
1 preparation1 characterization1 property1 figure
3 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | magnon mode | 120cm⁻¹ | — | |||
| Raman Peak | SP mode | 283cm⁻¹ | — | |||
| Raman Peak | ZP₁ | 90cm⁻¹ | — | |||
| Raman Peak | ZP₂ | 97cm⁻¹ | — | |||
| Raman Peak | ZP₃ | 110cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity | 1.42cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity on SiO₂ | 0.44cm⁻¹ | — | |||
| Transport Response | MR behavior | negative magnetoresistance at low field | — | |||
| Transport Response | MR behavior | positive magnetoresistance | — | |||
| Capacitance Anomaly Temperature | magnetocapacitance upturn onset | 90K | — |
Related documents with shared materials, methods, properties, or citations.
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Layer-parity-dependent interfacial coupling in Nb3Cl8/graphene van der Waals heterostructures
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p–n Heterojunctions
Quantum Hall effect in lightly hydrogenated graphene
Moiré magnetism in CrBr3 multilayers emerging from differential strain
Catalytic action of two-dimensional layered materials (WS2, and MoS2) on hydrogen sorption properties of MgH2
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations1 characterization5 properties1 figure
1 preparation1 characterization1 property1 figure
3 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | magnon mode | 120cm⁻¹ | — | |||
| Raman Peak | SP mode | 283cm⁻¹ | — | |||
| Raman Peak | ZP₁ | 90cm⁻¹ | — | |||
| Raman Peak | ZP₂ | 97cm⁻¹ | — | |||
| Raman Peak | ZP₃ | 110cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity | 1.42cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity on SiO₂ | 0.44cm⁻¹ | — | |||
| Transport Response | MR behavior | negative magnetoresistance at low field | — | |||
| Transport Response | MR behavior | positive magnetoresistance | — | |||
| Capacitance Anomaly Temperature | magnetocapacitance upturn onset | 90K | — |
Related documents with shared materials, methods, properties, or citations.
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Layer-parity-dependent interfacial coupling in Nb3Cl8/graphene van der Waals heterostructures
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p–n Heterojunctions
Quantum Hall effect in lightly hydrogenated graphene
Moiré magnetism in CrBr3 multilayers emerging from differential strain
Catalytic action of two-dimensional layered materials (WS2, and MoS2) on hydrogen sorption properties of MgH2
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations1 characterization5 properties1 figure
1 preparation1 characterization1 property1 figure
3 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | magnon mode | 120cm⁻¹ | — | |||
| Raman Peak | SP mode | 283cm⁻¹ | — | |||
| Raman Peak | ZP₁ | 90cm⁻¹ | — | |||
| Raman Peak | ZP₂ | 97cm⁻¹ | — | |||
| Raman Peak | ZP₃ | 110cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity | 1.42cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity on SiO₂ | 0.44cm⁻¹ | — | |||
| Transport Response | MR behavior | negative magnetoresistance at low field | — | |||
| Transport Response | MR behavior | positive magnetoresistance | — | |||
| Capacitance Anomaly Temperature | magnetocapacitance upturn onset | 90K | — |
Related documents with shared materials, methods, properties, or citations.
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Layer-parity-dependent interfacial coupling in Nb3Cl8/graphene van der Waals heterostructures
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p–n Heterojunctions
Quantum Hall effect in lightly hydrogenated graphene
Moiré magnetism in CrBr3 multilayers emerging from differential strain
Catalytic action of two-dimensional layered materials (WS2, and MoS2) on hydrogen sorption properties of MgH2
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations3 characterizations3 properties2 figures
2 preparations3 characterizations3 properties2 figures
2 preparations1 characterization5 properties1 figure
1 preparation1 characterization1 property1 figure
3 preparations1 characterization1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | magnon mode | 120cm⁻¹ | — | |||
| Raman Peak | SP mode | 283cm⁻¹ | — | |||
| Raman Peak | ZP₁ | 90cm⁻¹ | — | |||
| Raman Peak | ZP₂ | 97cm⁻¹ | — | |||
| Raman Peak | ZP₃ | 110cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity | 1.42cm⁻¹ | — | |||
| Raman Peak Shift | SP-mode deviation from anharmonicity on SiO₂ | 0.44cm⁻¹ | — | |||
| Transport Response | MR behavior | negative magnetoresistance at low field | — | |||
| Transport Response | MR behavior | positive magnetoresistance | — | |||
| Capacitance Anomaly Temperature | magnetocapacitance upturn onset | 90K | — |
Related documents with shared materials, methods, properties, or citations.
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Layer-parity-dependent interfacial coupling in Nb3Cl8/graphene van der Waals heterostructures
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p–n Heterojunctions
Quantum Hall effect in lightly hydrogenated graphene
Moiré magnetism in CrBr3 multilayers emerging from differential strain
Catalytic action of two-dimensional layered materials (WS2, and MoS2) on hydrogen sorption properties of MgH2
Defect-Engineered Layer-Dependent Nonlinear Optical Response in Two-Dimensional Muscovite for Efficient Optical Limiting