Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations6 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thermopower | Seebeck coefficient | 42uV/K | — | |||
| Thermopower | Seebeck coefficient | -14uV/K | — | |||
| Carrier Mobility | apparent carrier mobility | 1450cm²/Vs | — | |||
| Carrier Mobility | apparent carrier mobility | 2100cm²/Vs | — | |||
| Xps Atomic Ratio | — | 6.7% | — | |||
| Xps Atomic Ratio | — | 1.6% | — | |||
| Xps Detection Limit | — | undetectable | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
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Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
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Graphene Straintronics by Molecular Trapping
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Following the Long-Term Evolution of sp3-type Defects in Tritiated Graphene using Raman Spectroscopy
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations6 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thermopower | Seebeck coefficient | 42uV/K | — | |||
| Thermopower | Seebeck coefficient | -14uV/K | — | |||
| Carrier Mobility | apparent carrier mobility | 1450cm²/Vs | — | |||
| Carrier Mobility | apparent carrier mobility | 2100cm²/Vs | — | |||
| Xps Atomic Ratio | — | 6.7% | — | |||
| Xps Atomic Ratio | — | 1.6% | — | |||
| Xps Detection Limit | — | undetectable | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
New twisted van der Waals fabrication method based on strongly adhesive polymer
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Graphene Straintronics by Molecular Trapping
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Following the Long-Term Evolution of sp3-type Defects in Tritiated Graphene using Raman Spectroscopy
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Light-induced quantum tunnelling current in graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations6 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thermopower | Seebeck coefficient | 42uV/K | — | |||
| Thermopower | Seebeck coefficient | -14uV/K | — | |||
| Carrier Mobility | apparent carrier mobility | 1450cm²/Vs | — | |||
| Carrier Mobility | apparent carrier mobility | 2100cm²/Vs | — | |||
| Xps Atomic Ratio | — | 6.7% | — | |||
| Xps Atomic Ratio | — | 1.6% | — | |||
| Xps Detection Limit | — | undetectable | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
New twisted van der Waals fabrication method based on strongly adhesive polymer
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Graphene Straintronics by Molecular Trapping
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Following the Long-Term Evolution of sp3-type Defects in Tritiated Graphene using Raman Spectroscopy
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Light-induced quantum tunnelling current in graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations5 properties6 figures
4 preparations5 characterizations6 properties6 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thermopower | Seebeck coefficient | 42uV/K | — | |||
| Thermopower | Seebeck coefficient | -14uV/K | — | |||
| Carrier Mobility | apparent carrier mobility | 1450cm²/Vs | — | |||
| Carrier Mobility | apparent carrier mobility | 2100cm²/Vs | — | |||
| Xps Atomic Ratio | — | 6.7% | — | |||
| Xps Atomic Ratio | — | 1.6% | — | |||
| Xps Detection Limit | — | undetectable | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
New twisted van der Waals fabrication method based on strongly adhesive polymer
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Graphene Straintronics by Molecular Trapping
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Following the Long-Term Evolution of sp3-type Defects in Tritiated Graphene using Raman Spectroscopy
Low voltage graphene interface engineered organic ferroelectric tunnel junction devices
Sub-nm Curvature Unlocks Quantum Flexoelectricity in Graphene
Light-induced quantum tunnelling current in graphene