Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Suraina Gupta; Santu Prasad Jana; Rukshana Pervin; Anjan K. Gupta

doi:10.1103/PhysRevB.110.024506

Paper details

Research paper

Experimental GrowthExperimental Characterization

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Suraina Gupta, Santu Prasad Jana, Rukshana Pervin, Anjan K. Gupta

2024·10.1103/PhysRevB.110.024506·arXiv:2401.04532

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

3 preparations4 characterizations5 properties3 figures

ExperimentalCStudied MaterialPbStudied Material

Materials

graphene

Studied Material

Also known as

single layer grapheneSLG

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1577cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Peak	2D	2665cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Intensity Ratio	I(2D)/I(G)	2.3	C	Four-probe Josephson junction array device consisting of ran	—
Film Thickness	Pb deposited thickness	30nm	Pb	Four-probe Josephson junction array device consisting of ran	—
Island Size Range	Pb island diameter range	30-300nm	Pb	Four-probe Josephson junction array device consisting of ran	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1577cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Peak	2D	2665cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Intensity Ratio	I(2D)/I(G)	2.3	C	Four-probe Josephson junction array device consisting of ran	—
Film Thickness	Pb deposited thickness	30nm	Pb	Four-probe Josephson junction array device consisting of ran	—
Island Size Range	Pb island diameter range	30-300nm	Pb	Four-probe Josephson junction array device consisting of ran	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1577cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Peak	2D	2665cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Intensity Ratio	I(2D)/I(G)	2.3	C	Four-probe Josephson junction array device consisting of ran	—
Film Thickness	Pb deposited thickness	30nm	Pb	Four-probe Josephson junction array device consisting of ran	—
Island Size Range	Pb island diameter range	30-300nm	Pb	Four-probe Josephson junction array device consisting of ran	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	G	1577cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Peak	2D	2665cm⁻¹	C	Four-probe Josephson junction array device consisting of ran	—
Raman Intensity Ratio	I(2D)/I(G)	2.3	C	Four-probe Josephson junction array device consisting of ran	—
Film Thickness	Pb deposited thickness	30nm	Pb	Four-probe Josephson junction array device consisting of ran	—
Island Size Range	Pb island diameter range	30-300nm	Pb	Four-probe Josephson junction array device consisting of ran	—

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene

Samples

Four-probe Josephson junction array device consisting of randomly distributed Pb islands thermally evaporated onto exfoliated single-layer graphene on 300 nm SiO₂/Si, with Cr/Au van der Pauw contacts on the graphene.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties

Growth

Processing

Characterization

Properties