Sample B: monolayer CVD-grown graphene transferred onto SiO₂/Si, tritium-exposed, electrically contacted for in situ sheet resistance measurements, additionally heated at 300 C and 500 C, then stored and re-measured by Raman.
Sample B: monolayer CVD-grown graphene transferred onto SiO₂/Si, tritium-exposed, electrically contacted for in situ sheet resistance measurements, additionally heated at 300 C and 500 C, then stored and re-measured by Raman.
Sample B: monolayer CVD-grown graphene transferred onto SiO₂/Si, tritium-exposed, electrically contacted for in situ sheet resistance measurements, additionally heated at 300 C and 500 C, then stored and re-measured by Raman.
Sample B: monolayer CVD-grown graphene transferred onto SiO₂/Si, tritium-exposed, electrically contacted for in situ sheet resistance measurements, additionally heated at 300 C and 500 C, then stored and re-measured by Raman.