Patent
Atlas literature
Patent
US 10,573,517Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer structure, the method comprising: epitaxially depositing a graphene layer on a layer comprising single crystalline cobalt, wherein the layer comprising single crystalline cobalt is in contact with a dielectric layer, and further wherein the dielectric layer is in contact with a front wafer surface of a silicon wafer s wherein the g raphene layer is epitaxially deposited on a front cobalt layer surface of the layer comprisin g single crystalline cobalt according to the following steps: contacting the front cobalt layer surface of the layer comprisin g single crystalline cobalt with a carbon-containing g as and hydrogen g as at a temperature sufficient to nucleate carbon atoms on the front cobalt layer surface, wherein the vol:vol ratio of the carbon-containing g as and the hydrogen g as is at least 1:1; and precipitating carbon atoms to thereby epitaxially deposit the layer of graphene on the front cobalt layer surface, wherein the graphene layer has a q uality factor of at least 4, wherein the q uality factor is determined by the ratio of peak intensities of a Raman 2D band to a Raman G band. Currently amended
The method of claim 1 wherein the silicon wafer comprises the front wafer surface, a back wafer surface, and a circumferential wafer edge joining the front wafer surface and the back wafer surface. Previously presented
The method of claim 1 wherein the silicon wafer comprises a dopant selected from the group consisting of boron (p type), gallium (p type), phosphorus (n type), antimony (n type), and arsenic (n type), and any combination thereof. Previously presented
The method of claim 1 wherein the dielectric layer comprises one or more of a silicon dioxide layer, a silicon nitride layer, a silicon oxynitride layer, or a multilayer comprising a silicon dioxide layer and a silicon nitride layer. Previously presented
The method of claim 1 wherein the layer comprising single crystalline cobalt comprises the a front cobalt layer surface, a back cobalt layer surface, and a bulk cobalt layer region between the front cobalt layer surface and the back cobalt layer surface, wherein the back cobalt layer surface is in contact with the dielectric layer. Currently amended
The method of claim 1 further comprising: depositing a layer comprising cobalt on the dielectric layer by a technique selected from the group consisting of sputtering, evaporation, electron-beam evaporation, ion beam evaporation, chemical vapor deposition, electrolytic plating, and metal foil bonding to thereby prepare a structure comprising the silicon wafer, the dielectric layer, and the layer comprising cobalt; and annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to epitaxially depositing the graphene layer on the layer comprising single crystalline cobalt. Previously presented
The method of claim 1 wherein the ratio of the carbon- containin g gas and the hydrogen gas is 144:15.. Currently amended
The method of claim 1 4-4 wherein the carbon-containing gas is selected from the group consisting of methane, ethane, ethylene, acetylene, propane, propylene, propyne, butanes, butylenes, butynes, and combinations thereof. Currently amended
The method of claim 1 4-4 further comprising annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to contacting the layer surface of the layer comprising cobalt with a the carbon-containing gas. Currently amended
The method of claim 1 wherein the graphene layer has a single mono-atomic thickness. Previously presented
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7,.. Currently amended
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7.5.
Canceled
Canceled
The method of claim 144 wherein the carbon atoms are precipitated by cooling the layer comprising single crystalline cobalt in contact with a dielectric layer. Currently amended
Canceled
Canceled
- 34. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure: graphene/cobalt/dielectric/silicon wafer
Materials described outside the worked examples.
graphene
C
single crystalline cobalt
Co
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quality factor (Raman I_2D/I_G ratio) | ≥ 4 | C |
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 21 | ≥ 7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,573,517Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer structure, the method comprising: epitaxially depositing a graphene layer on a layer comprising single crystalline cobalt, wherein the layer comprising single crystalline cobalt is in contact with a dielectric layer, and further wherein the dielectric layer is in contact with a front wafer surface of a silicon wafer s wherein the g raphene layer is epitaxially deposited on a front cobalt layer surface of the layer comprisin g single crystalline cobalt according to the following steps: contacting the front cobalt layer surface of the layer comprisin g single crystalline cobalt with a carbon-containing g as and hydrogen g as at a temperature sufficient to nucleate carbon atoms on the front cobalt layer surface, wherein the vol:vol ratio of the carbon-containing g as and the hydrogen g as is at least 1:1; and precipitating carbon atoms to thereby epitaxially deposit the layer of graphene on the front cobalt layer surface, wherein the graphene layer has a q uality factor of at least 4, wherein the q uality factor is determined by the ratio of peak intensities of a Raman 2D band to a Raman G band. Currently amended
The method of claim 1 wherein the silicon wafer comprises the front wafer surface, a back wafer surface, and a circumferential wafer edge joining the front wafer surface and the back wafer surface. Previously presented
The method of claim 1 wherein the silicon wafer comprises a dopant selected from the group consisting of boron (p type), gallium (p type), phosphorus (n type), antimony (n type), and arsenic (n type), and any combination thereof. Previously presented
The method of claim 1 wherein the dielectric layer comprises one or more of a silicon dioxide layer, a silicon nitride layer, a silicon oxynitride layer, or a multilayer comprising a silicon dioxide layer and a silicon nitride layer. Previously presented
The method of claim 1 wherein the layer comprising single crystalline cobalt comprises the a front cobalt layer surface, a back cobalt layer surface, and a bulk cobalt layer region between the front cobalt layer surface and the back cobalt layer surface, wherein the back cobalt layer surface is in contact with the dielectric layer. Currently amended
The method of claim 1 further comprising: depositing a layer comprising cobalt on the dielectric layer by a technique selected from the group consisting of sputtering, evaporation, electron-beam evaporation, ion beam evaporation, chemical vapor deposition, electrolytic plating, and metal foil bonding to thereby prepare a structure comprising the silicon wafer, the dielectric layer, and the layer comprising cobalt; and annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to epitaxially depositing the graphene layer on the layer comprising single crystalline cobalt. Previously presented
The method of claim 1 wherein the ratio of the carbon- containin g gas and the hydrogen gas is 144:15.. Currently amended
The method of claim 1 4-4 wherein the carbon-containing gas is selected from the group consisting of methane, ethane, ethylene, acetylene, propane, propylene, propyne, butanes, butylenes, butynes, and combinations thereof. Currently amended
The method of claim 1 4-4 further comprising annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to contacting the layer surface of the layer comprising cobalt with a the carbon-containing gas. Currently amended
The method of claim 1 wherein the graphene layer has a single mono-atomic thickness. Previously presented
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7,.. Currently amended
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7.5.
Canceled
Canceled
The method of claim 144 wherein the carbon atoms are precipitated by cooling the layer comprising single crystalline cobalt in contact with a dielectric layer. Currently amended
Canceled
Canceled
- 34. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure: graphene/cobalt/dielectric/silicon wafer
Materials described outside the worked examples.
graphene
C
single crystalline cobalt
Co
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quality factor (Raman I_2D/I_G ratio) | ≥ 4 | C |
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 21 | ≥ 7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,573,517Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer structure, the method comprising: epitaxially depositing a graphene layer on a layer comprising single crystalline cobalt, wherein the layer comprising single crystalline cobalt is in contact with a dielectric layer, and further wherein the dielectric layer is in contact with a front wafer surface of a silicon wafer s wherein the g raphene layer is epitaxially deposited on a front cobalt layer surface of the layer comprisin g single crystalline cobalt according to the following steps: contacting the front cobalt layer surface of the layer comprisin g single crystalline cobalt with a carbon-containing g as and hydrogen g as at a temperature sufficient to nucleate carbon atoms on the front cobalt layer surface, wherein the vol:vol ratio of the carbon-containing g as and the hydrogen g as is at least 1:1; and precipitating carbon atoms to thereby epitaxially deposit the layer of graphene on the front cobalt layer surface, wherein the graphene layer has a q uality factor of at least 4, wherein the q uality factor is determined by the ratio of peak intensities of a Raman 2D band to a Raman G band. Currently amended
The method of claim 1 wherein the silicon wafer comprises the front wafer surface, a back wafer surface, and a circumferential wafer edge joining the front wafer surface and the back wafer surface. Previously presented
The method of claim 1 wherein the silicon wafer comprises a dopant selected from the group consisting of boron (p type), gallium (p type), phosphorus (n type), antimony (n type), and arsenic (n type), and any combination thereof. Previously presented
The method of claim 1 wherein the dielectric layer comprises one or more of a silicon dioxide layer, a silicon nitride layer, a silicon oxynitride layer, or a multilayer comprising a silicon dioxide layer and a silicon nitride layer. Previously presented
The method of claim 1 wherein the layer comprising single crystalline cobalt comprises the a front cobalt layer surface, a back cobalt layer surface, and a bulk cobalt layer region between the front cobalt layer surface and the back cobalt layer surface, wherein the back cobalt layer surface is in contact with the dielectric layer. Currently amended
The method of claim 1 further comprising: depositing a layer comprising cobalt on the dielectric layer by a technique selected from the group consisting of sputtering, evaporation, electron-beam evaporation, ion beam evaporation, chemical vapor deposition, electrolytic plating, and metal foil bonding to thereby prepare a structure comprising the silicon wafer, the dielectric layer, and the layer comprising cobalt; and annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to epitaxially depositing the graphene layer on the layer comprising single crystalline cobalt. Previously presented
The method of claim 1 wherein the ratio of the carbon- containin g gas and the hydrogen gas is 144:15.. Currently amended
The method of claim 1 4-4 wherein the carbon-containing gas is selected from the group consisting of methane, ethane, ethylene, acetylene, propane, propylene, propyne, butanes, butylenes, butynes, and combinations thereof. Currently amended
The method of claim 1 4-4 further comprising annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to contacting the layer surface of the layer comprising cobalt with a the carbon-containing gas. Currently amended
The method of claim 1 wherein the graphene layer has a single mono-atomic thickness. Previously presented
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7,.. Currently amended
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7.5.
Canceled
Canceled
The method of claim 144 wherein the carbon atoms are precipitated by cooling the layer comprising single crystalline cobalt in contact with a dielectric layer. Currently amended
Canceled
Canceled
- 34. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure: graphene/cobalt/dielectric/silicon wafer
Materials described outside the worked examples.
graphene
C
single crystalline cobalt
Co
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quality factor (Raman I_2D/I_G ratio) | ≥ 4 | C |
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 21 | ≥ 7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,573,517Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer structure, the method comprising: epitaxially depositing a graphene layer on a layer comprising single crystalline cobalt, wherein the layer comprising single crystalline cobalt is in contact with a dielectric layer, and further wherein the dielectric layer is in contact with a front wafer surface of a silicon wafer s wherein the g raphene layer is epitaxially deposited on a front cobalt layer surface of the layer comprisin g single crystalline cobalt according to the following steps: contacting the front cobalt layer surface of the layer comprisin g single crystalline cobalt with a carbon-containing g as and hydrogen g as at a temperature sufficient to nucleate carbon atoms on the front cobalt layer surface, wherein the vol:vol ratio of the carbon-containing g as and the hydrogen g as is at least 1:1; and precipitating carbon atoms to thereby epitaxially deposit the layer of graphene on the front cobalt layer surface, wherein the graphene layer has a q uality factor of at least 4, wherein the q uality factor is determined by the ratio of peak intensities of a Raman 2D band to a Raman G band. Currently amended
The method of claim 1 wherein the silicon wafer comprises the front wafer surface, a back wafer surface, and a circumferential wafer edge joining the front wafer surface and the back wafer surface. Previously presented
The method of claim 1 wherein the silicon wafer comprises a dopant selected from the group consisting of boron (p type), gallium (p type), phosphorus (n type), antimony (n type), and arsenic (n type), and any combination thereof. Previously presented
The method of claim 1 wherein the dielectric layer comprises one or more of a silicon dioxide layer, a silicon nitride layer, a silicon oxynitride layer, or a multilayer comprising a silicon dioxide layer and a silicon nitride layer. Previously presented
The method of claim 1 wherein the layer comprising single crystalline cobalt comprises the a front cobalt layer surface, a back cobalt layer surface, and a bulk cobalt layer region between the front cobalt layer surface and the back cobalt layer surface, wherein the back cobalt layer surface is in contact with the dielectric layer. Currently amended
The method of claim 1 further comprising: depositing a layer comprising cobalt on the dielectric layer by a technique selected from the group consisting of sputtering, evaporation, electron-beam evaporation, ion beam evaporation, chemical vapor deposition, electrolytic plating, and metal foil bonding to thereby prepare a structure comprising the silicon wafer, the dielectric layer, and the layer comprising cobalt; and annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to epitaxially depositing the graphene layer on the layer comprising single crystalline cobalt. Previously presented
The method of claim 1 wherein the ratio of the carbon- containin g gas and the hydrogen gas is 144:15.. Currently amended
The method of claim 1 4-4 wherein the carbon-containing gas is selected from the group consisting of methane, ethane, ethylene, acetylene, propane, propylene, propyne, butanes, butylenes, butynes, and combinations thereof. Currently amended
The method of claim 1 4-4 further comprising annealing a structure comprising the silicon wafer, the dielectric layer, and the layer comprising single crystalline cobalt in a reducing atmosphere prior to contacting the layer surface of the layer comprising cobalt with a the carbon-containing gas. Currently amended
The method of claim 1 wherein the graphene layer has a single mono-atomic thickness. Previously presented
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7,.. Currently amended
The method of claim 1 wherein the graphene layer has a quality factor of at least about 7.5.
Canceled
Canceled
The method of claim 144 wherein the carbon atoms are precipitated by cooling the layer comprising single crystalline cobalt in contact with a dielectric layer. Currently amended
Canceled
Canceled
- 34. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer structure: graphene/cobalt/dielectric/silicon wafer
Materials described outside the worked examples.
graphene
C
single crystalline cobalt
Co
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 D, depicting a multilayer structure comprising the semiconductor substrate 10, a dielectric layer 20, a layer comprising cobalt 30, and the single-layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quality factor (Raman I_2D/I_G ratio) | ≥ 4 | C |
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 21 | ≥ 7 |
Related documents with shared materials, methods, properties, or citations.
dielectric layer
carbon-containing gas
silicon wafer
Si
hydrogen gas
H₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxynitride
SiON
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 35 | ≥ 7.5 | C |
single crystalline cobalt layer thickness (claim 10) | 50–20000 | Co |
single crystalline cobalt layer thickness (claim 11) | 50–10000 | Co |
single crystalline cobalt layer thickness (claim 12) | 50–1000 | Co |
Thickness | 50–20000 nm | — |
Thickness | 50–10000 nm | — |
Thickness | 50–1000 nm | — |
Method for Growing High-Quality Graphene Layer
dielectric layer
carbon-containing gas
silicon wafer
Si
hydrogen gas
H₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxynitride
SiON
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 35 | ≥ 7.5 | C |
single crystalline cobalt layer thickness (claim 10) | 50–20000 | Co |
single crystalline cobalt layer thickness (claim 11) | 50–10000 | Co |
single crystalline cobalt layer thickness (claim 12) | 50–1000 | Co |
Thickness | 50–20000 nm | — |
Thickness | 50–10000 nm | — |
Thickness | 50–1000 nm | — |
Method for Growing High-Quality Graphene Layer
dielectric layer
carbon-containing gas
silicon wafer
Si
hydrogen gas
H₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxynitride
SiON
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 35 | ≥ 7.5 | C |
single crystalline cobalt layer thickness (claim 10) | 50–20000 | Co |
single crystalline cobalt layer thickness (claim 11) | 50–10000 | Co |
single crystalline cobalt layer thickness (claim 12) | 50–1000 | Co |
Thickness | 50–20000 nm | — |
Thickness | 50–10000 nm | — |
Thickness | 50–1000 nm | — |
Method for Growing High-Quality Graphene Layer
dielectric layer
carbon-containing gas
silicon wafer
Si
hydrogen gas
H₂
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon oxynitride
SiON
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 2A. The strong peak at 44 0 corresponds to either hexagonal closed packed (h c p) Co(0002) or face centered cubic (f c c) Co(111). See Ago et a l., ACS …
FIG. 3. These bands include: (i) the D band (~ 1,350 cm 1) attributing to the breathing mode of sp 2 carbons activated by presence of defects, (ii) the G band …
graphene quality factor (Raman I_2D/I_G ratio), higher bound claim 35 | ≥ 7.5 | C |
single crystalline cobalt layer thickness (claim 10) | 50–20000 | Co |
single crystalline cobalt layer thickness (claim 11) | 50–10000 | Co |
single crystalline cobalt layer thickness (claim 12) | 50–1000 | Co |
Thickness | 50–20000 nm | — |
Thickness | 50–10000 nm | — |
Thickness | 50–1000 nm | — |
