Patent
US 9,935,207TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Suk Ho CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,935,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a tunneling diode including a graphene-silicon quantum dot hybrid according to an embodiment of the present disclosure;
FIGS. 2A to 2E illustrate a process of manufacturing a tunneling diode including the graphene- silicon quantum dot hybrid structure according to an embodiment …
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
FIG. 4 illustrates average sizes, which are dependent upon an x value of a SiOx thin film, of silicon quantum dots included in a tunneling diode according to an …
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 10 illustrates the highest peaks of 2D and G peak according to the doping concentration of graphene;
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
FIG. 12 illustrates current-voltage curves according to the doping concentration of graphene, with respect to a tunneling diode including a graphene-silicon …
FIG. 13B illustrates an ideal factor of the tunneling diode of
FIG. 14 illustrates current- voltage curves according to the sizes of silicon quantum dots, with respect to a tunneling diode including a graphene-silicon …
FIG. 15A illustrates an ideal factor of the tunneling diode of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-8. Canceled
Canceled
: A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate; forming a hybrid structure by forming doped graphene on the silicon quantum dot layer; and forming an electrode on upper and lower parts of the hybrid structure, wherein the forming of the silicon quantum dot layer comprises sequentially laminating SiO 2 and SiO x thin films on the substrate and then thermally treating the laminated Si O 2 and SiO x thin films at 1000 ° C to 1200 ° C in a nitrogen atmosphere to form the silicon quantum dots in the Si O 2 thin film, and wherein x is controlled to have a value of 0.8 to 1.6 and sizes of the silicon quantum dots are controlled to co rr espond to a value of x. Previously presented
: The method according to claim 9, wherein the forming of the hybrid structure comprises forming graphene on a catalyst layer by reacting the catalyst layer with a mixed gas containing carbon and thus performing deposition by chemical vapor deposition (CVD); transfe rr ing the formed graphene on the silicon quantum dot layer; and doping graphene by spin-coating AuC l 3 at a concentration of 10 to 30 mM, and performing annealing at 90 ° C to 110iC. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tunneling diode/photodiode with graphene-silicon quantum dot hybrid structure
Materials described outside the worked examples.
silicon quantum dots
Si
silicon oxide thin film (SiO₂)
SiO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diode ideal factor | — | — |
Temperature | 90–110 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,935,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a tunneling diode including a graphene-silicon quantum dot hybrid according to an embodiment of the present disclosure;
FIGS. 2A to 2E illustrate a process of manufacturing a tunneling diode including the graphene- silicon quantum dot hybrid structure according to an embodiment …
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
FIG. 4 illustrates average sizes, which are dependent upon an x value of a SiOx thin film, of silicon quantum dots included in a tunneling diode according to an …
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 10 illustrates the highest peaks of 2D and G peak according to the doping concentration of graphene;
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
FIG. 12 illustrates current-voltage curves according to the doping concentration of graphene, with respect to a tunneling diode including a graphene-silicon …
FIG. 13B illustrates an ideal factor of the tunneling diode of
FIG. 14 illustrates current- voltage curves according to the sizes of silicon quantum dots, with respect to a tunneling diode including a graphene-silicon …
FIG. 15A illustrates an ideal factor of the tunneling diode of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-8. Canceled
Canceled
: A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate; forming a hybrid structure by forming doped graphene on the silicon quantum dot layer; and forming an electrode on upper and lower parts of the hybrid structure, wherein the forming of the silicon quantum dot layer comprises sequentially laminating SiO 2 and SiO x thin films on the substrate and then thermally treating the laminated Si O 2 and SiO x thin films at 1000 ° C to 1200 ° C in a nitrogen atmosphere to form the silicon quantum dots in the Si O 2 thin film, and wherein x is controlled to have a value of 0.8 to 1.6 and sizes of the silicon quantum dots are controlled to co rr espond to a value of x. Previously presented
: The method according to claim 9, wherein the forming of the hybrid structure comprises forming graphene on a catalyst layer by reacting the catalyst layer with a mixed gas containing carbon and thus performing deposition by chemical vapor deposition (CVD); transfe rr ing the formed graphene on the silicon quantum dot layer; and doping graphene by spin-coating AuC l 3 at a concentration of 10 to 30 mM, and performing annealing at 90 ° C to 110iC. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tunneling diode/photodiode with graphene-silicon quantum dot hybrid structure
Materials described outside the worked examples.
silicon quantum dots
Si
silicon oxide thin film (SiO₂)
SiO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diode ideal factor | — | — |
Temperature | 90–110 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,935,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a tunneling diode including a graphene-silicon quantum dot hybrid according to an embodiment of the present disclosure;
FIGS. 2A to 2E illustrate a process of manufacturing a tunneling diode including the graphene- silicon quantum dot hybrid structure according to an embodiment …
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
FIG. 4 illustrates average sizes, which are dependent upon an x value of a SiOx thin film, of silicon quantum dots included in a tunneling diode according to an …
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 10 illustrates the highest peaks of 2D and G peak according to the doping concentration of graphene;
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
FIG. 12 illustrates current-voltage curves according to the doping concentration of graphene, with respect to a tunneling diode including a graphene-silicon …
FIG. 13B illustrates an ideal factor of the tunneling diode of
FIG. 14 illustrates current- voltage curves according to the sizes of silicon quantum dots, with respect to a tunneling diode including a graphene-silicon …
FIG. 15A illustrates an ideal factor of the tunneling diode of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-8. Canceled
Canceled
: A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate; forming a hybrid structure by forming doped graphene on the silicon quantum dot layer; and forming an electrode on upper and lower parts of the hybrid structure, wherein the forming of the silicon quantum dot layer comprises sequentially laminating SiO 2 and SiO x thin films on the substrate and then thermally treating the laminated Si O 2 and SiO x thin films at 1000 ° C to 1200 ° C in a nitrogen atmosphere to form the silicon quantum dots in the Si O 2 thin film, and wherein x is controlled to have a value of 0.8 to 1.6 and sizes of the silicon quantum dots are controlled to co rr espond to a value of x. Previously presented
: The method according to claim 9, wherein the forming of the hybrid structure comprises forming graphene on a catalyst layer by reacting the catalyst layer with a mixed gas containing carbon and thus performing deposition by chemical vapor deposition (CVD); transfe rr ing the formed graphene on the silicon quantum dot layer; and doping graphene by spin-coating AuC l 3 at a concentration of 10 to 30 mM, and performing annealing at 90 ° C to 110iC. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tunneling diode/photodiode with graphene-silicon quantum dot hybrid structure
Materials described outside the worked examples.
silicon quantum dots
Si
silicon oxide thin film (SiO₂)
SiO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diode ideal factor | — | — |
Temperature | 90–110 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,935,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a tunneling diode including a graphene-silicon quantum dot hybrid according to an embodiment of the present disclosure;
FIGS. 2A to 2E illustrate a process of manufacturing a tunneling diode including the graphene- silicon quantum dot hybrid structure according to an embodiment …
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
FIG. 4 illustrates average sizes, which are dependent upon an x value of a SiOx thin film, of silicon quantum dots included in a tunneling diode according to an …
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 10 illustrates the highest peaks of 2D and G peak according to the doping concentration of graphene;
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
FIG. 12 illustrates current-voltage curves according to the doping concentration of graphene, with respect to a tunneling diode including a graphene-silicon …
FIG. 13B illustrates an ideal factor of the tunneling diode of
FIG. 14 illustrates current- voltage curves according to the sizes of silicon quantum dots, with respect to a tunneling diode including a graphene-silicon …
FIG. 15A illustrates an ideal factor of the tunneling diode of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-8. Canceled
Canceled
: A method of manufacturing a photodiode comprising a graphene-silicon quantum dot hybrid structure, the method comprising: forming a silicon quantum dot layer comprising silicon quantum dots, each of which is formed in a thin film of a silicon oxide, on a substrate; forming a hybrid structure by forming doped graphene on the silicon quantum dot layer; and forming an electrode on upper and lower parts of the hybrid structure, wherein the forming of the silicon quantum dot layer comprises sequentially laminating SiO 2 and SiO x thin films on the substrate and then thermally treating the laminated Si O 2 and SiO x thin films at 1000 ° C to 1200 ° C in a nitrogen atmosphere to form the silicon quantum dots in the Si O 2 thin film, and wherein x is controlled to have a value of 0.8 to 1.6 and sizes of the silicon quantum dots are controlled to co rr espond to a value of x. Previously presented
: The method according to claim 9, wherein the forming of the hybrid structure comprises forming graphene on a catalyst layer by reacting the catalyst layer with a mixed gas containing carbon and thus performing deposition by chemical vapor deposition (CVD); transfe rr ing the formed graphene on the silicon quantum dot layer; and doping graphene by spin-coating AuC l 3 at a concentration of 10 to 30 mM, and performing annealing at 90 ° C to 110iC. Original
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tunneling diode/photodiode with graphene-silicon quantum dot hybrid structure
Materials described outside the worked examples.
silicon quantum dots
Si
silicon oxide thin film (SiO₂)
SiO₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 illustrates a transmission electron microscope (TEM) image of silicon quantum dots included in a tunneling diode including a graphene-silicon quantum …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diode ideal factor | — | — |
Temperature | 90–110 °C |
Related documents with shared materials, methods, properties, or citations.
SiOx thin film
SiOx
doped graphene
AuCl₃ dopant
AuCl₃
silicon quantum dot layer
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
| — |
Thickness | 1.9–3.4 nm | — |
— | 1.6–1.76 eV | — |
Flow Rate | 10–30 sccm | — |
Thickness | 10–30 mM | — |
Thickness | 2.5–3 nm | — |
Thickness | 1580–1590 cm | — |
Thickness | 0–30 mM | — |
Thickness | 23–30 mM | — |
Temperature | 1000–1200 °C | — |
SiOx thin film
SiOx
doped graphene
AuCl₃ dopant
AuCl₃
silicon quantum dot layer
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
| — |
Thickness | 1.9–3.4 nm | — |
— | 1.6–1.76 eV | — |
Flow Rate | 10–30 sccm | — |
Thickness | 10–30 mM | — |
Thickness | 2.5–3 nm | — |
Thickness | 1580–1590 cm | — |
Thickness | 0–30 mM | — |
Thickness | 23–30 mM | — |
Temperature | 1000–1200 °C | — |
SiOx thin film
SiOx
doped graphene
AuCl₃ dopant
AuCl₃
silicon quantum dot layer
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
| — |
Thickness | 1.9–3.4 nm | — |
— | 1.6–1.76 eV | — |
Flow Rate | 10–30 sccm | — |
Thickness | 10–30 mM | — |
Thickness | 2.5–3 nm | — |
Thickness | 1580–1590 cm | — |
Thickness | 0–30 mM | — |
Thickness | 23–30 mM | — |
Temperature | 1000–1200 °C | — |
SiOx thin film
SiOx
doped graphene
AuCl₃ dopant
AuCl₃
silicon quantum dot layer
FIG. 5A illustrates photoluminescence (PL) spectra dependent upon wavelengths at different sizes of silicon quantum dots with respect to silicon quantum dots …
FIG. 6 illustrates an atomic force microscopy (AFM) image of a surface formed after transferring graphene onto a silicon quantum dot layer with respect to a …
FIG. 7 illustrates a Raman spectrum result of graphene transferred onto a silicon quantum dot layer with respect to a tunneling diode including a …
FIG. 8 illustrates photoluminescence (PL) spectra before and after transferring graphene onto a silicon quantum dot layer with respect to a tunneling diode …
FIG. 9 illustrates Raman spectra of a tunneling diode including a graphene-silicon quantum dot hybrid structure according to an embodiment of the present …
FIG. 11 illustrates sheet resistance of graphene according to the doping concentration of graphene, with respect to a tunneling diode including a …
| — |
Thickness | 1.9–3.4 nm | — |
— | 1.6–1.76 eV | — |
Flow Rate | 10–30 sccm | — |
Thickness | 10–30 mM | — |
Thickness | 2.5–3 nm | — |
Thickness | 1580–1590 cm | — |
Thickness | 0–30 mM | — |
Thickness | 23–30 mM | — |
Temperature | 1000–1200 °C | — |