Interlayer Exciton–Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

Paper details

Research paper

Experimental GrowthExperimental Characterization

Interlayer Exciton–Phonon Bound State in Bi₂Se₃/monolayer WS₂ van der Waals Heterostructures

Zachariah Hennighausen, Jisoo Moon, Kathleen M. McCreary, Connie H. Li et al.

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation4 characterizations4 properties2 figures

ExperimentalBi₂Se₃Studied MaterialWS₂Studied Material

Bi₂Se₃

Studied Material

Also known as

bismuth selenide

Variables

layer_thickness= few-layer

studied material

WS₂

Studied Material

Related documents with shared materials, methods, properties, or citations.

Interlayer Exciton–Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Shift	localized exciton red shift	130meV	WS₂	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Pl Peak Shift	exciton-phonon peak spacing	19.3meV	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Mode Separation	A₁(3) surface phonon spacing equivalent	156cm⁻¹	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Substrate Thickness	island height	3.7nm	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Peak	regex-detected Raman peak	180cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Shift	localized exciton red shift	130meV	WS₂	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Pl Peak Shift	exciton-phonon peak spacing	19.3meV	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Mode Separation	A₁(3) surface phonon spacing equivalent	156cm⁻¹	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Substrate Thickness	island height	3.7nm	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Peak	regex-detected Raman peak	180cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Shift	localized exciton red shift	130meV	WS₂	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Pl Peak Shift	exciton-phonon peak spacing	19.3meV	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Mode Separation	A₁(3) surface phonon spacing equivalent	156cm⁻¹	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Substrate Thickness	island height	3.7nm	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Peak	regex-detected Raman peak	180cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Shift	localized exciton red shift	130meV	WS₂	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Pl Peak Shift	exciton-phonon peak spacing	19.3meV	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Mode Separation	A₁(3) surface phonon spacing equivalent	156cm⁻¹	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Substrate Thickness	island height	3.7nm	Bi₂Se₃	As-grown Bi₂Se₃/monolayer WS₂ van der Waals heterostructure		—
Raman Peak	regex-detected Raman peak	180cm⁻¹	—	—	—	—