| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | structure classification | monolayer | — | |||
| Xrd Microstrain | VS defect density | 0.185atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.091atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.023atoms/nm² | — | |||
| PL Peak | band-edge emission | 1.85eV | — | |||
| PL Peak | band-edge emission | 1.95eV | — | |||
| PL Peak | A exciton | 1.89eV | — | |||
| PL Peak | A exciton | 1.95eV | — | |||
| PL Peak | A exciton | 2.01eV | — | |||
| PL Peak | bound exciton | 1.86eV | — | |||
| PL Peak | bound exciton | 1.91eV | — | |||
| PL Peak | bound exciton | 1.98eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.835eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.857eV | — | |||
| PL Peak | free-to-bound transition | 1.7eV | — | |||
| PL Peak | free-to-bound transition | 1.77eV | — | |||
| PL Peak | free-to-bound transition | 1.6eV | — | |||
| PL Peak | free-to-bound transition | 1.75eV | — | |||
| PL Peak | free-to-bound transition | 1.95eV | — | |||
| PL Peak | thermal activation energy | 28.4meV | — | |||
| PL Peak | thermal activation energy | 26.5meV | — | |||
| Pl Peak Fwhm | broad defect-related peak binding energy | 132meV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.88-1.93eV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.85-1.89eV | — | |||
| PL Peak | A exciton shift across graded alloy | 1.95-2.01eV | — | |||
| Optical Band Gap | band gap | 1.85eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | structure classification | monolayer | — | |||
| Xrd Microstrain | VS defect density | 0.185atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.091atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.023atoms/nm² | — | |||
| PL Peak | band-edge emission | 1.85eV | — | |||
| PL Peak | band-edge emission | 1.95eV | — | |||
| PL Peak | A exciton | 1.89eV | — | |||
| PL Peak | A exciton | 1.95eV | — | |||
| PL Peak | A exciton | 2.01eV | — | |||
| PL Peak | bound exciton | 1.86eV | — | |||
| PL Peak | bound exciton | 1.91eV | — | |||
| PL Peak | bound exciton | 1.98eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.835eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.857eV | — | |||
| PL Peak | free-to-bound transition | 1.7eV | — | |||
| PL Peak | free-to-bound transition | 1.77eV | — | |||
| PL Peak | free-to-bound transition | 1.6eV | — | |||
| PL Peak | free-to-bound transition | 1.75eV | — | |||
| PL Peak | free-to-bound transition | 1.95eV | — | |||
| PL Peak | thermal activation energy | 28.4meV | — | |||
| PL Peak | thermal activation energy | 26.5meV | — | |||
| Pl Peak Fwhm | broad defect-related peak binding energy | 132meV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.88-1.93eV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.85-1.89eV | — | |||
| PL Peak | A exciton shift across graded alloy | 1.95-2.01eV | — | |||
| Optical Band Gap | band gap | 1.85eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | structure classification | monolayer | — | |||
| Xrd Microstrain | VS defect density | 0.185atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.091atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.023atoms/nm² | — | |||
| PL Peak | band-edge emission | 1.85eV | — | |||
| PL Peak | band-edge emission | 1.95eV | — | |||
| PL Peak | A exciton | 1.89eV | — | |||
| PL Peak | A exciton | 1.95eV | — | |||
| PL Peak | A exciton | 2.01eV | — | |||
| PL Peak | bound exciton | 1.86eV | — | |||
| PL Peak | bound exciton | 1.91eV | — | |||
| PL Peak | bound exciton | 1.98eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.835eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.857eV | — | |||
| PL Peak | free-to-bound transition | 1.7eV | — | |||
| PL Peak | free-to-bound transition | 1.77eV | — | |||
| PL Peak | free-to-bound transition | 1.6eV | — | |||
| PL Peak | free-to-bound transition | 1.75eV | — | |||
| PL Peak | free-to-bound transition | 1.95eV | — | |||
| PL Peak | thermal activation energy | 28.4meV | — | |||
| PL Peak | thermal activation energy | 26.5meV | — | |||
| Pl Peak Fwhm | broad defect-related peak binding energy | 132meV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.88-1.93eV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.85-1.89eV | — | |||
| PL Peak | A exciton shift across graded alloy | 1.95-2.01eV | — | |||
| Optical Band Gap | band gap | 1.85eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Space Group | structure classification | monolayer | — | |||
| Xrd Microstrain | VS defect density | 0.185atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.091atoms/nm² | — | |||
| Xrd Microstrain | VS defect density | 0.023atoms/nm² | — | |||
| PL Peak | band-edge emission | 1.85eV | — | |||
| PL Peak | band-edge emission | 1.95eV | — | |||
| PL Peak | A exciton | 1.89eV | — | |||
| PL Peak | A exciton | 1.95eV | — | |||
| PL Peak | A exciton | 2.01eV | — | |||
| PL Peak | bound exciton | 1.86eV | — | |||
| PL Peak | bound exciton | 1.91eV | — | |||
| PL Peak | bound exciton | 1.98eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.835eV | — | |||
| PL Peak | free-to-bound / bound-exciton feature | 1.857eV | — | |||
| PL Peak | free-to-bound transition | 1.7eV | — | |||
| PL Peak | free-to-bound transition | 1.77eV | — | |||
| PL Peak | free-to-bound transition | 1.6eV | — | |||
| PL Peak | free-to-bound transition | 1.75eV | — | |||
| PL Peak | free-to-bound transition | 1.95eV | — | |||
| PL Peak | thermal activation energy | 28.4meV | — | |||
| PL Peak | thermal activation energy | 26.5meV | — | |||
| Pl Peak Fwhm | broad defect-related peak binding energy | 132meV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.88-1.93eV | — | |||
| PL Peak | bound exciton / VS-associated feature | 1.85-1.89eV | — | |||
| PL Peak | A exciton shift across graded alloy | 1.95-2.01eV | — | |||
| Optical Band Gap | band gap | 1.85eV | — | — | — | — |
