Research paper
Experimental GrowthExperimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations7 properties3 figures
1 preparation4 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 404cm⁻¹ | — | |||
| Raman Peak | E' | 384cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | E | 353cm⁻¹ | — | |||
| PL Peak | MoS₂ emission | 1.85eV | — | |||
| PL Peak | MoSSe emission | 1.75eV | — | |||
| Thermal Conductance Reduction Rate | reduction rate | 2.68MWm⁻²K⁻¹deg-1 | — |
Related documents with shared materials, methods, properties, or citations.
Strain-Enhanced Mobility of Monolayer MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Durable Enhancement of MoS2 Single-Layer Photoluminescence by Ultraviolet Laser Treatment Under Ambient Conditions
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations7 properties3 figures
1 preparation4 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 404cm⁻¹ | — | |||
| Raman Peak | E' | 384cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | E | 353cm⁻¹ | — | |||
| PL Peak | MoS₂ emission | 1.85eV | — | |||
| PL Peak | MoSSe emission | 1.75eV | — | |||
| Thermal Conductance Reduction Rate | reduction rate | 2.68MWm⁻²K⁻¹deg-1 | — |
Related documents with shared materials, methods, properties, or citations.
Strain-Enhanced Mobility of Monolayer MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Durable Enhancement of MoS2 Single-Layer Photoluminescence by Ultraviolet Laser Treatment Under Ambient Conditions
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations7 properties3 figures
1 preparation4 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 404cm⁻¹ | — | |||
| Raman Peak | E' | 384cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | E | 353cm⁻¹ | — | |||
| PL Peak | MoS₂ emission | 1.85eV | — | |||
| PL Peak | MoSSe emission | 1.75eV | — | |||
| Thermal Conductance Reduction Rate | reduction rate | 2.68MWm⁻²K⁻¹deg-1 | — |
Related documents with shared materials, methods, properties, or citations.
Strain-Enhanced Mobility of Monolayer MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Durable Enhancement of MoS2 Single-Layer Photoluminescence by Ultraviolet Laser Treatment Under Ambient Conditions
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations4 characterizations7 properties3 figures
1 preparation4 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | A1' | 404cm⁻¹ | — | |||
| Raman Peak | E' | 384cm⁻¹ | — | |||
| Raman Peak | A₁ | 290cm⁻¹ | — | |||
| Raman Peak | E | 353cm⁻¹ | — | |||
| PL Peak | MoS₂ emission | 1.85eV | — | |||
| PL Peak | MoSSe emission | 1.75eV | — | |||
| Thermal Conductance Reduction Rate | reduction rate | 2.68MWm⁻²K⁻¹deg-1 | — |
Related documents with shared materials, methods, properties, or citations.
Strain-Enhanced Mobility of Monolayer MoS2
Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Durable Enhancement of MoS2 Single-Layer Photoluminescence by Ultraviolet Laser Treatment Under Ambient Conditions
Quasi 1D MoS2 Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity
Spectroscopic Evidence for Interfacial Charge Separation and Recombination in Graphene-MoS2 Vertical Heterostructures
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition
Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to-Spin Conversion
Cu Intercalation-stabilized 1T’ MoS2 with Electrical Insulating Behavior
On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
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