Research paperExperimental GrowthExperimental CharacterizationComputational DFTFe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angleHui Li, Junbo Yang, Xiaohui Li, Mo Cheng et al.2022·10.48550/arxiv.2209.07766·arXiv:2209.07766AbstractFe-assisted epitaxial growth of wafer-scale single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle. The study reports 4-inch single-crystal Fe-doped MoS₂ monolayers grown by CVD, multiscale structural characterization, device measurements, and theoretical calculations indicating that Fe lowers the formation energy of parallel steps on sapphire surfaces and promotes unidirectional edge nucleation.Read more
4-inch single-crystal Fe-doped MoS₂ monolayer grown on c-plane sapphire without miscut angle.1 preparation10 characterizations9 properties23 figuresExperimentalFe:MoS₂Studied MaterialAl₂O₃Substrate / DielectricFeDopantExpand
Pristine monolayer MoS₂ grown on c-plane sapphire without miscut angle for comparison.2 characterizations1 property4 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTFe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angleHui Li, Junbo Yang, Xiaohui Li, Mo Cheng et al.2022·10.48550/arxiv.2209.07766·arXiv:2209.07766AbstractFe-assisted epitaxial growth of wafer-scale single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle. The study reports 4-inch single-crystal Fe-doped MoS₂ monolayers grown by CVD, multiscale structural characterization, device measurements, and theoretical calculations indicating that Fe lowers the formation energy of parallel steps on sapphire surfaces and promotes unidirectional edge nucleation.Read more
4-inch single-crystal Fe-doped MoS₂ monolayer grown on c-plane sapphire without miscut angle.1 preparation10 characterizations9 properties23 figuresExperimentalFe:MoS₂Studied MaterialAl₂O₃Substrate / DielectricFeDopantExpand
Pristine monolayer MoS₂ grown on c-plane sapphire without miscut angle for comparison.2 characterizations1 property4 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTFe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angleHui Li, Junbo Yang, Xiaohui Li, Mo Cheng et al.2022·10.48550/arxiv.2209.07766·arXiv:2209.07766AbstractFe-assisted epitaxial growth of wafer-scale single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle. The study reports 4-inch single-crystal Fe-doped MoS₂ monolayers grown by CVD, multiscale structural characterization, device measurements, and theoretical calculations indicating that Fe lowers the formation energy of parallel steps on sapphire surfaces and promotes unidirectional edge nucleation.Read more
4-inch single-crystal Fe-doped MoS₂ monolayer grown on c-plane sapphire without miscut angle.1 preparation10 characterizations9 properties23 figuresExperimentalFe:MoS₂Studied MaterialAl₂O₃Substrate / DielectricFeDopantExpand
Pristine monolayer MoS₂ grown on c-plane sapphire without miscut angle for comparison.2 characterizations1 property4 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTFe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angleHui Li, Junbo Yang, Xiaohui Li, Mo Cheng et al.2022·10.48550/arxiv.2209.07766·arXiv:2209.07766AbstractFe-assisted epitaxial growth of wafer-scale single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle. The study reports 4-inch single-crystal Fe-doped MoS₂ monolayers grown by CVD, multiscale structural characterization, device measurements, and theoretical calculations indicating that Fe lowers the formation energy of parallel steps on sapphire surfaces and promotes unidirectional edge nucleation.Read more
4-inch single-crystal Fe-doped MoS₂ monolayer grown on c-plane sapphire without miscut angle.1 preparation10 characterizations9 properties23 figuresExperimentalFe:MoS₂Studied MaterialAl₂O₃Substrate / DielectricFeDopantExpand
Pristine monolayer MoS₂ grown on c-plane sapphire without miscut angle for comparison.2 characterizations1 property4 figuresExperimentalMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand