Abstract

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in photovoltaic devices. In this work, we employ ab initio many-body perturbation theory within G₀W₀-BSE approach to accurately compute the optoelectronic properties of thin films of 2H-TMDCs composed of Mo, W, S, and Se. Subsequently, we evaluate their photovoltaic performance including exciton recombination effects, and show this is a key ingredient. We obtain efficiencies of up to 29% for a 200-nm thick film of WSe2, thus providing an upper limit. We also include other phenomenological recombination mechanisms that could be present in current samples. This slightly reduces efficiencies, indicating that even with current synthesis technologies, there is still potential for further enhancement of TMDCs’ performance in photovoltaic applications.

Abstract

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in photovoltaic devices. In this work, we employ ab initio many-body perturbation theory within G₀W₀-BSE approach to accurately compute the optoelectronic properties of thin films of 2H-TMDCs composed of Mo, W, S, and Se. Subsequently, we evaluate their photovoltaic performance including exciton recombination effects, and show this is a key ingredient. We obtain efficiencies of up to 29% for a 200-nm thick film of WSe2, thus providing an upper limit. We also include other phenomenological recombination mechanisms that could be present in current samples. This slightly reduces efficiencies, indicating that even with current synthesis technologies, there is still potential for further enhancement of TMDCs’ performance in photovoltaic applications.

Abstract

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in photovoltaic devices. In this work, we employ ab initio many-body perturbation theory within G₀W₀-BSE approach to accurately compute the optoelectronic properties of thin films of 2H-TMDCs composed of Mo, W, S, and Se. Subsequently, we evaluate their photovoltaic performance including exciton recombination effects, and show this is a key ingredient. We obtain efficiencies of up to 29% for a 200-nm thick film of WSe2, thus providing an upper limit. We also include other phenomenological recombination mechanisms that could be present in current samples. This slightly reduces efficiencies, indicating that even with current synthesis technologies, there is still potential for further enhancement of TMDCs’ performance in photovoltaic applications.

Abstract

Transition metal dichalcogenides (TMDCs) have garnered significant interest in optoelectronics, owing to their scalability and thickness-dependent electrical and optical properties. In particular, thin films of TMDCs could be used in photovoltaic devices. In this work, we employ ab initio many-body perturbation theory within G₀W₀-BSE approach to accurately compute the optoelectronic properties of thin films of 2H-TMDCs composed of Mo, W, S, and Se. Subsequently, we evaluate their photovoltaic performance including exciton recombination effects, and show this is a key ingredient. We obtain efficiencies of up to 29% for a 200-nm thick film of WSe2, thus providing an upper limit. We also include other phenomenological recombination mechanisms that could be present in current samples. This slightly reduces efficiencies, indicating that even with current synthesis technologies, there is still potential for further enhancement of TMDCs’ performance in photovoltaic applications.