Patent
US 10,023,469Method of Producing Graphene
Kilwon CHO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,023,469Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are a flowchart and a schematic view showing the process of producing graphene according to the present invention, respectively. Hereinafter, a …
FIG. 2 is a schematic view showing the process of producing graphene according to the present invention;
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 4. As shown in
FIG. 5. As shown in
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIGS. 7 and 8, respectively. Herein, p m represents the maximum growth rate of graphene, and to represents the time required to supersaturate the carbon …
FIG. 8 shows the graphene area increase curve upon the formation of graphene through pre-faceting on the surface of a copper catalyst layer followed by …
FIG. 9. As shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
FIG. 12. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: (aL bringing a metal catalyst into contact with a hydrogen gas; (b) bringing the metal catalyst in t he s~ tep (a} into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert gas; and (c) forming graphene on the metal catalyst by bringing the metal catalyst in t he ste p (b) into contact with a hydrogen gas and a hydrocarbon gas. Currently amended
The method of claim 1, wherein in the s S tep (b), the flow of gas comprises the hydrocarbon gas. Currently amended
The method of claim 1, wherein in the step (b) and the step {c}, the hydrocarbon gas is at least one selected from the group consisting of methane, ethane, ethylene, benzene, and ethanol. Currently amended
The method of claim 1, wherein the inert gas is at least one selected from the group consisting of argon, helium, and neon. Original
The method of claim 1, wherein the s S tep (b) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein a contact time in the s s tep (b) is adjusted to thus control a number of layers of graphene. Currently amended
The method of claim 1, wherein the metal catalyst includes at least one selected from the group consisting of copper, nickel, iron, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, further comprising forming the metal catalyst on a substrate, before the s S tep (a). Currently amended
The method of claim 1, wherein the metal catalyst is formed to a thickness of 0.5 to 100 p m on the substrate. Original
The method of claim 1, wherein t he s tep (c) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein the ss tep (c) is performed through any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Currently amended
The method of claim 1, wherein the step (b) forms facets on a surface of the metal catalyst. New
A method of manufacturing an electronic device, comprising: (1) bringing a metal catalyst into contact with a hydrogen gas; (2) bringing the metal catalyst in t he s~ tep (1) into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert g as; (3)_ forming graphene on the metal catalyst by bringing the metal catalyst in t he S step (2) into contact with a hydrogen gas and a hydrocarbon gas; (4)_ obtaining the graphene by removing the metal catalyst from a product obtained in t he s S tep (3); and {5) forming an electronic device including the graphene of the step (4). Currently amended
The method of claim 16, wherein the electronic device is any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight, a radio-frequency identification (R F ID) tag, a solar cell module, an e-paper, a thin- film transistor (TFT), and a TFT array. Original
The method of claim 16, wherein the step (2) forms facets on a surface of the metal catalyst. New
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Graphene was produced and characterized by SEM images and Raman analysis. Example 1 involved pre-faceting followed by CVD; Comparative Example 5 used CVD without pre-faceting. Results showed differences in graphene quality and layer uniformity related to surface faceting of the copper catalyst.
2 materials1 process step
AFM images of the surfaces of copper catalyst layers and SEM images of graphene were obtained. Different pre-faceting conditions were used to control graphene layer number.
2 materials1 process step
Surface AFM images after faceting of copper catalyst layers through methane annealing of copper were obtained, demonstrating facet formation on the copper surface.
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
inert gas
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–1500 °C | — |
Table 1
mples 1 to 5 and Comparative Examples 1 to 7 and the characteristics of the formed graphene are summarized in Table 1 below.
p. 14
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Patent
Atlas literature
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US 10,023,469Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are a flowchart and a schematic view showing the process of producing graphene according to the present invention, respectively. Hereinafter, a …
FIG. 2 is a schematic view showing the process of producing graphene according to the present invention;
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 4. As shown in
FIG. 5. As shown in
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIGS. 7 and 8, respectively. Herein, p m represents the maximum growth rate of graphene, and to represents the time required to supersaturate the carbon …
FIG. 8 shows the graphene area increase curve upon the formation of graphene through pre-faceting on the surface of a copper catalyst layer followed by …
FIG. 9. As shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
FIG. 12. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: (aL bringing a metal catalyst into contact with a hydrogen gas; (b) bringing the metal catalyst in t he s~ tep (a} into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert gas; and (c) forming graphene on the metal catalyst by bringing the metal catalyst in t he ste p (b) into contact with a hydrogen gas and a hydrocarbon gas. Currently amended
The method of claim 1, wherein in the s S tep (b), the flow of gas comprises the hydrocarbon gas. Currently amended
The method of claim 1, wherein in the step (b) and the step {c}, the hydrocarbon gas is at least one selected from the group consisting of methane, ethane, ethylene, benzene, and ethanol. Currently amended
The method of claim 1, wherein the inert gas is at least one selected from the group consisting of argon, helium, and neon. Original
The method of claim 1, wherein the s S tep (b) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein a contact time in the s s tep (b) is adjusted to thus control a number of layers of graphene. Currently amended
The method of claim 1, wherein the metal catalyst includes at least one selected from the group consisting of copper, nickel, iron, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, further comprising forming the metal catalyst on a substrate, before the s S tep (a). Currently amended
The method of claim 1, wherein the metal catalyst is formed to a thickness of 0.5 to 100 p m on the substrate. Original
The method of claim 1, wherein t he s tep (c) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein the ss tep (c) is performed through any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Currently amended
The method of claim 1, wherein the step (b) forms facets on a surface of the metal catalyst. New
A method of manufacturing an electronic device, comprising: (1) bringing a metal catalyst into contact with a hydrogen gas; (2) bringing the metal catalyst in t he s~ tep (1) into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert g as; (3)_ forming graphene on the metal catalyst by bringing the metal catalyst in t he S step (2) into contact with a hydrogen gas and a hydrocarbon gas; (4)_ obtaining the graphene by removing the metal catalyst from a product obtained in t he s S tep (3); and {5) forming an electronic device including the graphene of the step (4). Currently amended
The method of claim 16, wherein the electronic device is any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight, a radio-frequency identification (R F ID) tag, a solar cell module, an e-paper, a thin- film transistor (TFT), and a TFT array. Original
The method of claim 16, wherein the step (2) forms facets on a surface of the metal catalyst. New
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Graphene was produced and characterized by SEM images and Raman analysis. Example 1 involved pre-faceting followed by CVD; Comparative Example 5 used CVD without pre-faceting. Results showed differences in graphene quality and layer uniformity related to surface faceting of the copper catalyst.
2 materials1 process step
AFM images of the surfaces of copper catalyst layers and SEM images of graphene were obtained. Different pre-faceting conditions were used to control graphene layer number.
2 materials1 process step
Surface AFM images after faceting of copper catalyst layers through methane annealing of copper were obtained, demonstrating facet formation on the copper surface.
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
inert gas
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–1500 °C | — |
Table 1
mples 1 to 5 and Comparative Examples 1 to 7 and the characteristics of the formed graphene are summarized in Table 1 below.
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,023,469Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are a flowchart and a schematic view showing the process of producing graphene according to the present invention, respectively. Hereinafter, a …
FIG. 2 is a schematic view showing the process of producing graphene according to the present invention;
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 4. As shown in
FIG. 5. As shown in
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIGS. 7 and 8, respectively. Herein, p m represents the maximum growth rate of graphene, and to represents the time required to supersaturate the carbon …
FIG. 8 shows the graphene area increase curve upon the formation of graphene through pre-faceting on the surface of a copper catalyst layer followed by …
FIG. 9. As shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
FIG. 12. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: (aL bringing a metal catalyst into contact with a hydrogen gas; (b) bringing the metal catalyst in t he s~ tep (a} into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert gas; and (c) forming graphene on the metal catalyst by bringing the metal catalyst in t he ste p (b) into contact with a hydrogen gas and a hydrocarbon gas. Currently amended
The method of claim 1, wherein in the s S tep (b), the flow of gas comprises the hydrocarbon gas. Currently amended
The method of claim 1, wherein in the step (b) and the step {c}, the hydrocarbon gas is at least one selected from the group consisting of methane, ethane, ethylene, benzene, and ethanol. Currently amended
The method of claim 1, wherein the inert gas is at least one selected from the group consisting of argon, helium, and neon. Original
The method of claim 1, wherein the s S tep (b) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein a contact time in the s s tep (b) is adjusted to thus control a number of layers of graphene. Currently amended
The method of claim 1, wherein the metal catalyst includes at least one selected from the group consisting of copper, nickel, iron, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, further comprising forming the metal catalyst on a substrate, before the s S tep (a). Currently amended
The method of claim 1, wherein the metal catalyst is formed to a thickness of 0.5 to 100 p m on the substrate. Original
The method of claim 1, wherein t he s tep (c) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein the ss tep (c) is performed through any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Currently amended
The method of claim 1, wherein the step (b) forms facets on a surface of the metal catalyst. New
A method of manufacturing an electronic device, comprising: (1) bringing a metal catalyst into contact with a hydrogen gas; (2) bringing the metal catalyst in t he s~ tep (1) into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert g as; (3)_ forming graphene on the metal catalyst by bringing the metal catalyst in t he S step (2) into contact with a hydrogen gas and a hydrocarbon gas; (4)_ obtaining the graphene by removing the metal catalyst from a product obtained in t he s S tep (3); and {5) forming an electronic device including the graphene of the step (4). Currently amended
The method of claim 16, wherein the electronic device is any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight, a radio-frequency identification (R F ID) tag, a solar cell module, an e-paper, a thin- film transistor (TFT), and a TFT array. Original
The method of claim 16, wherein the step (2) forms facets on a surface of the metal catalyst. New
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Graphene was produced and characterized by SEM images and Raman analysis. Example 1 involved pre-faceting followed by CVD; Comparative Example 5 used CVD without pre-faceting. Results showed differences in graphene quality and layer uniformity related to surface faceting of the copper catalyst.
2 materials1 process step
AFM images of the surfaces of copper catalyst layers and SEM images of graphene were obtained. Different pre-faceting conditions were used to control graphene layer number.
2 materials1 process step
Surface AFM images after faceting of copper catalyst layers through methane annealing of copper were obtained, demonstrating facet formation on the copper surface.
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
inert gas
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–1500 °C | — |
Table 1
mples 1 to 5 and Comparative Examples 1 to 7 and the characteristics of the formed graphene are summarized in Table 1 below.
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,023,469Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are a flowchart and a schematic view showing the process of producing graphene according to the present invention, respectively. Hereinafter, a …
FIG. 2 is a schematic view showing the process of producing graphene according to the present invention;
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 4. As shown in
FIG. 5. As shown in
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIGS. 7 and 8, respectively. Herein, p m represents the maximum growth rate of graphene, and to represents the time required to supersaturate the carbon …
FIG. 8 shows the graphene area increase curve upon the formation of graphene through pre-faceting on the surface of a copper catalyst layer followed by …
FIG. 9. As shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
FIG. 12. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, comprising: (aL bringing a metal catalyst into contact with a hydrogen gas; (b) bringing the metal catalyst in t he s~ tep (a} into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert gas; and (c) forming graphene on the metal catalyst by bringing the metal catalyst in t he ste p (b) into contact with a hydrogen gas and a hydrocarbon gas. Currently amended
The method of claim 1, wherein in the s S tep (b), the flow of gas comprises the hydrocarbon gas. Currently amended
The method of claim 1, wherein in the step (b) and the step {c}, the hydrocarbon gas is at least one selected from the group consisting of methane, ethane, ethylene, benzene, and ethanol. Currently amended
The method of claim 1, wherein the inert gas is at least one selected from the group consisting of argon, helium, and neon. Original
The method of claim 1, wherein the s S tep (b) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein a contact time in the s s tep (b) is adjusted to thus control a number of layers of graphene. Currently amended
The method of claim 1, wherein the metal catalyst includes at least one selected from the group consisting of copper, nickel, iron, platinum, palladium, ruthenium, and cobalt. Original
The method of claim 1, further comprising forming the metal catalyst on a substrate, before the s S tep (a). Currently amended
The method of claim 1, wherein the metal catalyst is formed to a thickness of 0.5 to 100 p m on the substrate. Original
The method of claim 1, wherein t he s tep (c) is performed at a temperature of 500 to 1,500 °C. Currently amended
The method of claim 1, wherein the ss tep (c) is performed through any one process selected from the group consisting of low-pressure chemical vapor deposition, atmospheric-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, Joule-heating chemical vapor deposition, and microwave chemical vapor deposition. Currently amended
The method of claim 1, wherein the step (b) forms facets on a surface of the metal catalyst. New
A method of manufacturing an electronic device, comprising: (1) bringing a metal catalyst into contact with a hydrogen gas; (2) bringing the metal catalyst in t he s~ tep (1) into contact with a flow of gas, wherein the flow of g as comprises any one selected from the group consisting of a hydrocarbon gas, a nitrogen gas, an inert gas, and a mixture of a nitrogen g as and an inert g as; (3)_ forming graphene on the metal catalyst by bringing the metal catalyst in t he S step (2) into contact with a hydrogen gas and a hydrocarbon gas; (4)_ obtaining the graphene by removing the metal catalyst from a product obtained in t he s S tep (3); and {5) forming an electronic device including the graphene of the step (4). Currently amended
The method of claim 16, wherein the electronic device is any one selected from the group consisting of an electrode, a touch panel, an electroluminescent display, a backlight, a radio-frequency identification (R F ID) tag, a solar cell module, an e-paper, a thin- film transistor (TFT), and a TFT array. Original
The method of claim 16, wherein the step (2) forms facets on a surface of the metal catalyst. New
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Graphene was produced and characterized by SEM images and Raman analysis. Example 1 involved pre-faceting followed by CVD; Comparative Example 5 used CVD without pre-faceting. Results showed differences in graphene quality and layer uniformity related to surface faceting of the copper catalyst.
2 materials1 process step
AFM images of the surfaces of copper catalyst layers and SEM images of graphene were obtained. Different pre-faceting conditions were used to control graphene layer number.
2 materials1 process step
Surface AFM images after faceting of copper catalyst layers through methane annealing of copper were obtained, demonstrating facet formation on the copper surface.
Layer stacks claimed or described, ordered top of device to substrate.
electronic device including graphene
Materials described outside the worked examples.
inert gas
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–1500 °C | — |
Table 1
mples 1 to 5 and Comparative Examples 1 to 7 and the characteristics of the formed graphene are summarized in Table 1 below.
p. 14
Related documents with shared materials, methods, properties, or citations.
nitrogen gas
N₂
copper
Cu
methane
CH₄
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
nitrogen gas
N₂
copper
Cu
methane
CH₄
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
nitrogen gas
N₂
copper
Cu
methane
CH₄
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20
nitrogen gas
N₂
copper
Cu
methane
CH₄
FIG. 3. The results of the fraction of a Cu(111) surface for I(2D)/I (G) and I (D)/I (G) values of graphene of Example 1 and the results of the 20 fraction of …
FIG. 6. In (a) and (b), the graphene area increase curves depending on the vapor deposition time are shown in
FIG. 10 shows surface AFM images after faceting of the surfaces of copper catalyst layers through methane annealing of copper in Preparation Examples 1 and 2;
FIG. 11 shows AFM images of the surfaces of copper catalyst layers depending on the pre-faceting time; and 20