Patent
US 9,629,251Sub-micron Laser Patterning of Graphene and 2D Materials
Marc Currie, D. Kurt Gaskill, Anindya Nath
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,629,251Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plot illustrating a spatial profile of an exemplary laser beam used to pattern a graphene sheet in accordance with the present invention. [025]
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
FIG. 4 is a Raman two-dimensional intensity map of the boxed area shown in
FIG. 5 is an optical microscope image depicting an exemplary embodiment of an electronic device formed on a graphene sample patterned with a laser in …
FIGS. 6A and 6B are plots illustrating the improvement in device isolation for a device on a graphene sheet that has been laser-patterned in accordance with …
FIG. 7 is an optical image illustrating a change in the optical properties of a graphene sheet that has been laser-patterned in accordance with the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on the a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a channel in the two-dimensional material along the desired path, the channel being formed without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer.
The method according to claim 1, wherein the two-dimensional material is graphene.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; Page 2 of 12 U.S. Application No. 14/565,734 Response to Office Action dated wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is molybdenum disulfide (M o S 2), molybdenum diselanide (MoSe₂), boron nitride (BN), tungsten disulfide (WS₂), or tungsten diselenide (WSe₂).
The method according to claim 1, wherein the laser pulsed laser beam is configured to produce a channel having a width less than about 1 m in the two-dimensional material.
The method according to claim 1, wherein the two-dimensional material is patterned in s itu while situated in a growth chamber, patterning being completed before the material is exposed to an ambient atmosphere.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material Page 3 of 12 U.S. Application No. 14/565,734 Response to Office Action dated along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer.
. canceled
. canceled
A method for defining a desired cu rr ent path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on the two-dimensional material along a desired path, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a plurality of channels around the electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 9, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising: focusing a first pulsed laser beam on at least one predefined location on the two- dimensional material, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the first pulsed laser beam being is configured to cause the first pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by the first pulsed laser beam, and illuminating the two-dimensional material with a second pulsed laser beam, the second pulsed laser beam being configured to produce one or more unablated modified areas in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by either the first or the second pulsed laser beam; and wherein the extent of the ablation is tuned such that a combination of the ablated channels and the unablated modified areas produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material. the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two dimensional material.
The method according to claim 11, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) The method according to claim 11 A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising, focusing a pulsed laser beam on at least one predefined location on the two-dimensional material; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two-dimensional material without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam, the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two-dimensional material; wherein the two-dimensional material is a multilayered two-dimensional materia l, and wherein the first laser pulse pulsed laser beam is configured to pass through a first layer of the multilayered two-dimensional material to pattern a second layer of the multilayered two- dimensional material situated below the first layer.
. canceled
(Cu rr ently Amended) The method according to claim 13 11, wherein at least two channels having different extents of ablation are formed, the extent of ablation of the two-dimensional material in each channel being tuned to produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material.
A method for producing a multilayered two-dimensional material having a varying layer thickness, comprising: focusing a pulsed laser beam on a sheet of a first two-dimensional material along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam Page 6 of 12 U.S. Application No. 14/565,734 Response to Office Action dated to ablate atoms from the first two-dimensional material and to form a channel in the first two- dimensional material in the portion of the first two-dimensional material illuminated by the laser beam without damaging a portion of the first two-dimensional material not illuminated by the pulsed laser beam to form a patterned first two-dimensional material; and transferring a sheet of a second two-dimensional material onto the patterned first two- dimensional material to form a multi-layered two-dimensional material, wherein a portion of the multi-layered two-dimensional material comprising an unpatterned portion of the first two- dimensional material and the second two-dimensional material is two sheets thick and a portion of the multi-layered two-dimensional material comprising a patterned portion of the first two- dimensional material and the second two-dimensional material is one sheet thick.
A method for forming a laser-patterned two-dimensional material on a laser- sensitive substrate, comprising: focusing a pulsed laser beam on a two-dimensional material situated on a handle substrate and directing the pulsed laser beam along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to produce a laser-patterned two-dimensional material having an ablated channel formed along the desired path, the ablated channel being formed without damaging the remainder of the two- dimensional material not illuminated by the pulsed laser beam; removing the laser-patterned two-dimensional material from the handle wafer; and transferring the laser-patterned two-dimensional material to the laser-sensitive substrate.
The method according to claim 17, wherein the laser-sensitive substrate is a flexible substrate formed from one of polyethylene tephthalate (PET), polyethylene naphthalate (PEN), and cellulose.
A method for defining a desired current path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed lasers beam is confi g ured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a plurality of channels around the Page 8 of 12 U.S. Application No. 14/565,734 Response to Office Action dated electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 24, wherein the two-dimensional material is graphene. Page 9 of 12
Materials described outside the worked examples.
two-dimensional material
graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene single-layer optical absorption | 2.3 %/layer | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,629,251Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plot illustrating a spatial profile of an exemplary laser beam used to pattern a graphene sheet in accordance with the present invention. [025]
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
FIG. 4 is a Raman two-dimensional intensity map of the boxed area shown in
FIG. 5 is an optical microscope image depicting an exemplary embodiment of an electronic device formed on a graphene sample patterned with a laser in …
FIGS. 6A and 6B are plots illustrating the improvement in device isolation for a device on a graphene sheet that has been laser-patterned in accordance with …
FIG. 7 is an optical image illustrating a change in the optical properties of a graphene sheet that has been laser-patterned in accordance with the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on the a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a channel in the two-dimensional material along the desired path, the channel being formed without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer.
The method according to claim 1, wherein the two-dimensional material is graphene.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; Page 2 of 12 U.S. Application No. 14/565,734 Response to Office Action dated wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is molybdenum disulfide (M o S 2), molybdenum diselanide (MoSe₂), boron nitride (BN), tungsten disulfide (WS₂), or tungsten diselenide (WSe₂).
The method according to claim 1, wherein the laser pulsed laser beam is configured to produce a channel having a width less than about 1 m in the two-dimensional material.
The method according to claim 1, wherein the two-dimensional material is patterned in s itu while situated in a growth chamber, patterning being completed before the material is exposed to an ambient atmosphere.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material Page 3 of 12 U.S. Application No. 14/565,734 Response to Office Action dated along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer.
. canceled
. canceled
A method for defining a desired cu rr ent path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on the two-dimensional material along a desired path, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a plurality of channels around the electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 9, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising: focusing a first pulsed laser beam on at least one predefined location on the two- dimensional material, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the first pulsed laser beam being is configured to cause the first pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by the first pulsed laser beam, and illuminating the two-dimensional material with a second pulsed laser beam, the second pulsed laser beam being configured to produce one or more unablated modified areas in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by either the first or the second pulsed laser beam; and wherein the extent of the ablation is tuned such that a combination of the ablated channels and the unablated modified areas produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material. the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two dimensional material.
The method according to claim 11, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) The method according to claim 11 A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising, focusing a pulsed laser beam on at least one predefined location on the two-dimensional material; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two-dimensional material without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam, the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two-dimensional material; wherein the two-dimensional material is a multilayered two-dimensional materia l, and wherein the first laser pulse pulsed laser beam is configured to pass through a first layer of the multilayered two-dimensional material to pattern a second layer of the multilayered two- dimensional material situated below the first layer.
. canceled
(Cu rr ently Amended) The method according to claim 13 11, wherein at least two channels having different extents of ablation are formed, the extent of ablation of the two-dimensional material in each channel being tuned to produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material.
A method for producing a multilayered two-dimensional material having a varying layer thickness, comprising: focusing a pulsed laser beam on a sheet of a first two-dimensional material along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam Page 6 of 12 U.S. Application No. 14/565,734 Response to Office Action dated to ablate atoms from the first two-dimensional material and to form a channel in the first two- dimensional material in the portion of the first two-dimensional material illuminated by the laser beam without damaging a portion of the first two-dimensional material not illuminated by the pulsed laser beam to form a patterned first two-dimensional material; and transferring a sheet of a second two-dimensional material onto the patterned first two- dimensional material to form a multi-layered two-dimensional material, wherein a portion of the multi-layered two-dimensional material comprising an unpatterned portion of the first two- dimensional material and the second two-dimensional material is two sheets thick and a portion of the multi-layered two-dimensional material comprising a patterned portion of the first two- dimensional material and the second two-dimensional material is one sheet thick.
A method for forming a laser-patterned two-dimensional material on a laser- sensitive substrate, comprising: focusing a pulsed laser beam on a two-dimensional material situated on a handle substrate and directing the pulsed laser beam along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to produce a laser-patterned two-dimensional material having an ablated channel formed along the desired path, the ablated channel being formed without damaging the remainder of the two- dimensional material not illuminated by the pulsed laser beam; removing the laser-patterned two-dimensional material from the handle wafer; and transferring the laser-patterned two-dimensional material to the laser-sensitive substrate.
The method according to claim 17, wherein the laser-sensitive substrate is a flexible substrate formed from one of polyethylene tephthalate (PET), polyethylene naphthalate (PEN), and cellulose.
A method for defining a desired current path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed lasers beam is confi g ured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a plurality of channels around the Page 8 of 12 U.S. Application No. 14/565,734 Response to Office Action dated electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 24, wherein the two-dimensional material is graphene. Page 9 of 12
Materials described outside the worked examples.
two-dimensional material
graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene single-layer optical absorption | 2.3 %/layer | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,629,251Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plot illustrating a spatial profile of an exemplary laser beam used to pattern a graphene sheet in accordance with the present invention. [025]
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
FIG. 4 is a Raman two-dimensional intensity map of the boxed area shown in
FIG. 5 is an optical microscope image depicting an exemplary embodiment of an electronic device formed on a graphene sample patterned with a laser in …
FIGS. 6A and 6B are plots illustrating the improvement in device isolation for a device on a graphene sheet that has been laser-patterned in accordance with …
FIG. 7 is an optical image illustrating a change in the optical properties of a graphene sheet that has been laser-patterned in accordance with the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on the a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a channel in the two-dimensional material along the desired path, the channel being formed without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer.
The method according to claim 1, wherein the two-dimensional material is graphene.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; Page 2 of 12 U.S. Application No. 14/565,734 Response to Office Action dated wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is molybdenum disulfide (M o S 2), molybdenum diselanide (MoSe₂), boron nitride (BN), tungsten disulfide (WS₂), or tungsten diselenide (WSe₂).
The method according to claim 1, wherein the laser pulsed laser beam is configured to produce a channel having a width less than about 1 m in the two-dimensional material.
The method according to claim 1, wherein the two-dimensional material is patterned in s itu while situated in a growth chamber, patterning being completed before the material is exposed to an ambient atmosphere.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material Page 3 of 12 U.S. Application No. 14/565,734 Response to Office Action dated along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer.
. canceled
. canceled
A method for defining a desired cu rr ent path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on the two-dimensional material along a desired path, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a plurality of channels around the electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 9, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising: focusing a first pulsed laser beam on at least one predefined location on the two- dimensional material, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the first pulsed laser beam being is configured to cause the first pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by the first pulsed laser beam, and illuminating the two-dimensional material with a second pulsed laser beam, the second pulsed laser beam being configured to produce one or more unablated modified areas in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by either the first or the second pulsed laser beam; and wherein the extent of the ablation is tuned such that a combination of the ablated channels and the unablated modified areas produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material. the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two dimensional material.
The method according to claim 11, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) The method according to claim 11 A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising, focusing a pulsed laser beam on at least one predefined location on the two-dimensional material; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two-dimensional material without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam, the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two-dimensional material; wherein the two-dimensional material is a multilayered two-dimensional materia l, and wherein the first laser pulse pulsed laser beam is configured to pass through a first layer of the multilayered two-dimensional material to pattern a second layer of the multilayered two- dimensional material situated below the first layer.
. canceled
(Cu rr ently Amended) The method according to claim 13 11, wherein at least two channels having different extents of ablation are formed, the extent of ablation of the two-dimensional material in each channel being tuned to produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material.
A method for producing a multilayered two-dimensional material having a varying layer thickness, comprising: focusing a pulsed laser beam on a sheet of a first two-dimensional material along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam Page 6 of 12 U.S. Application No. 14/565,734 Response to Office Action dated to ablate atoms from the first two-dimensional material and to form a channel in the first two- dimensional material in the portion of the first two-dimensional material illuminated by the laser beam without damaging a portion of the first two-dimensional material not illuminated by the pulsed laser beam to form a patterned first two-dimensional material; and transferring a sheet of a second two-dimensional material onto the patterned first two- dimensional material to form a multi-layered two-dimensional material, wherein a portion of the multi-layered two-dimensional material comprising an unpatterned portion of the first two- dimensional material and the second two-dimensional material is two sheets thick and a portion of the multi-layered two-dimensional material comprising a patterned portion of the first two- dimensional material and the second two-dimensional material is one sheet thick.
A method for forming a laser-patterned two-dimensional material on a laser- sensitive substrate, comprising: focusing a pulsed laser beam on a two-dimensional material situated on a handle substrate and directing the pulsed laser beam along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to produce a laser-patterned two-dimensional material having an ablated channel formed along the desired path, the ablated channel being formed without damaging the remainder of the two- dimensional material not illuminated by the pulsed laser beam; removing the laser-patterned two-dimensional material from the handle wafer; and transferring the laser-patterned two-dimensional material to the laser-sensitive substrate.
The method according to claim 17, wherein the laser-sensitive substrate is a flexible substrate formed from one of polyethylene tephthalate (PET), polyethylene naphthalate (PEN), and cellulose.
A method for defining a desired current path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed lasers beam is confi g ured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a plurality of channels around the Page 8 of 12 U.S. Application No. 14/565,734 Response to Office Action dated electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 24, wherein the two-dimensional material is graphene. Page 9 of 12
Materials described outside the worked examples.
two-dimensional material
graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene single-layer optical absorption | 2.3 %/layer | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,629,251Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plot illustrating a spatial profile of an exemplary laser beam used to pattern a graphene sheet in accordance with the present invention. [025]
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
FIG. 4 is a Raman two-dimensional intensity map of the boxed area shown in
FIG. 5 is an optical microscope image depicting an exemplary embodiment of an electronic device formed on a graphene sample patterned with a laser in …
FIGS. 6A and 6B are plots illustrating the improvement in device isolation for a device on a graphene sheet that has been laser-patterned in accordance with …
FIG. 7 is an optical image illustrating a change in the optical properties of a graphene sheet that has been laser-patterned in accordance with the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on the a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a channel in the two-dimensional material along the desired path, the channel being formed without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer.
The method according to claim 1, wherein the two-dimensional material is graphene.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; Page 2 of 12 U.S. Application No. 14/565,734 Response to Office Action dated wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is molybdenum disulfide (M o S 2), molybdenum diselanide (MoSe₂), boron nitride (BN), tungsten disulfide (WS₂), or tungsten diselenide (WSe₂).
The method according to claim 1, wherein the laser pulsed laser beam is configured to produce a channel having a width less than about 1 m in the two-dimensional material.
The method according to claim 1, wherein the two-dimensional material is patterned in s itu while situated in a growth chamber, patterning being completed before the material is exposed to an ambient atmosphere.
The method according to claim 1, A method for forming a laser-patterned two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a channel in the two-dimensional material Page 3 of 12 U.S. Application No. 14/565,734 Response to Office Action dated along the desired path without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; and wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer.
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A method for defining a desired cu rr ent path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on the two-dimensional material along a desired path, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is being c onfigured to cause the pulsed laser beam to ablate atoms from the two-dimensional material and to form a plurality of channels around the electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is grown by chemical vapor deposition (CVD), a first layer of the two-dimensional material being patterned on a bottom surface thereof before the growth of a second layer of the two-dimensional material on a top surface of the first layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 9, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising: focusing a first pulsed laser beam on at least one predefined location on the two- dimensional material, wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the first pulsed laser beam being is configured to cause the first pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by the first pulsed laser beam, and illuminating the two-dimensional material with a second pulsed laser beam, the second pulsed laser beam being configured to produce one or more unablated modified areas in the two- dimensional material without damaging the remainder of the two-dimensional material not illuminated by either the first or the second pulsed laser beam; and wherein the extent of the ablation is tuned such that a combination of the ablated channels and the unablated modified areas produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material. the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two dimensional material.
The method according to claim 11, wherein the two-dimensional material is graphene.
(Cu rr ently Amended) The method according to claim 11 A method for producing a two-dimensional material having desired electrical, optical, thermal, or mechanical properties, comprising, focusing a pulsed laser beam on at least one predefined location on the two-dimensional material; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed laser beam is configured to cause the pulsed laser beam to form one or more ablated channels having a desired extent of ablation in the two-dimensional material without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam, the extent of ablation being tuned to produce a desired electrical, optical, thermal, or mechanical property of the two-dimensional material; wherein the two-dimensional material is a multilayered two-dimensional materia l, and wherein the first laser pulse pulsed laser beam is configured to pass through a first layer of the multilayered two-dimensional material to pattern a second layer of the multilayered two- dimensional material situated below the first layer.
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(Cu rr ently Amended) The method according to claim 13 11, wherein at least two channels having different extents of ablation are formed, the extent of ablation of the two-dimensional material in each channel being tuned to produce the desired electrical, optical, thermal, or mechanical property of the two-dimensional material.
A method for producing a multilayered two-dimensional material having a varying layer thickness, comprising: focusing a pulsed laser beam on a sheet of a first two-dimensional material along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam Page 6 of 12 U.S. Application No. 14/565,734 Response to Office Action dated to ablate atoms from the first two-dimensional material and to form a channel in the first two- dimensional material in the portion of the first two-dimensional material illuminated by the laser beam without damaging a portion of the first two-dimensional material not illuminated by the pulsed laser beam to form a patterned first two-dimensional material; and transferring a sheet of a second two-dimensional material onto the patterned first two- dimensional material to form a multi-layered two-dimensional material, wherein a portion of the multi-layered two-dimensional material comprising an unpatterned portion of the first two- dimensional material and the second two-dimensional material is two sheets thick and a portion of the multi-layered two-dimensional material comprising a patterned portion of the first two- dimensional material and the second two-dimensional material is one sheet thick.
A method for forming a laser-patterned two-dimensional material on a laser- sensitive substrate, comprising: focusing a pulsed laser beam on a two-dimensional material situated on a handle substrate and directing the pulsed laser beam along a desired path in the two-dimensional material, at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate being configured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to produce a laser-patterned two-dimensional material having an ablated channel formed along the desired path, the ablated channel being formed without damaging the remainder of the two- dimensional material not illuminated by the pulsed laser beam; removing the laser-patterned two-dimensional material from the handle wafer; and transferring the laser-patterned two-dimensional material to the laser-sensitive substrate.
The method according to claim 17, wherein the laser-sensitive substrate is a flexible substrate formed from one of polyethylene tephthalate (PET), polyethylene naphthalate (PEN), and cellulose.
A method for defining a desired current path for an electrical device formed on a two-dimensional material, comprising: focusing a pulsed laser beam on a two-dimensional material along a desired path; wherein at least one of a wavelength, a beam shape, an optical fluence, a pulse width, and a pulse repetition rate of the pulsed lasers beam is confi g ured to cause the pulsed laser beam to ablate atoms from the two-dimensional material to form a plurality of channels around the Page 8 of 12 U.S. Application No. 14/565,734 Response to Office Action dated electrical device without damaging the remainder of the two-dimensional material not illuminated by the pulsed laser beam; wherein the two-dimensional material is epitaxially grown, a first layer of the two- dimensional material being patterned on a top surface thereof before the growth of a second layer of the two-dimensional material on a bottom surface of the top layer; and wherein the channels are configured to isolate the electrical device and to define a desired curr ent path for the electrical device in the two-dimensional material.
The method according to claim 24, wherein the two-dimensional material is graphene. Page 9 of 12
Materials described outside the worked examples.
two-dimensional material
graphene
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A and 2B are atomic force microscopy (AFM) images depicting the surface of a graphene sample before (FIG. I A) and after (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene single-layer optical absorption | 2.3 %/layer | C |
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FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
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| ≤ 1 nm |
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molybdenum disulfide
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FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
FIG. 4 is a Raman two-dimensional intensity map of the boxed area shown in
| ≤ 1 nm |
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molybdenum disulfide
MoS₂
molybdenum diselenide
MoSe₂
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tungsten disulfide
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FIG. 3A and 3B are scanning electron microscopy (SEM) images depicting additional aspects of a graphene sample patterned with a laser in accordance with the …
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| ≤ 1 nm |
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