Patent
US 10,017,878Growth Method of Graphene
HAOMIN WANG
US
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Patent
Atlas literature
Patent
US 10,017,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a process flow diagram of a growth method of a graphene of the present invention.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A growth method of graphene, comprising the following steps: Si: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S 3: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate -3 in step S2, the gas containing catalytic element is a gaseous compound or gaseous elementary substance; the gaseous compound is a hydride, carbide or hydrocarbon; the gaseous element substance comprises at least one of iron, nickel, silicon, cobalt, lead, tin, germanium, and silver; the carbon source comprises at least one of ethylene, acetylene, benzene, PM M A and graphite; by introducing the gaseous catalytic element into the growth chamber, catalytic atoms are absorbed around an edge of the graphene in the growth process to form a chemical bond which is weaker than a carbon-carbon bond, that enables to continue bonding with an active carbon g roup and a transposition between active carbon atoms and catalytic atoms is realized by metathesis to achieve the growth of g raphene. Currently amended
The growth method of graphene according to claim 1, characterized in that: in step S2, outside the growth chamber, a solid compound or a solid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber, or, a liquid compound or a liquid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber. Original
The growth method of graphene according to claim 1, characterized in that: in step S3, the graphene thin film is grown by a thermal chemical vapor deposition method, a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method or a pulsed laser deposition method. Original
The growth method of graphene according to claim 1, characterized in that: the insulating substrate is a sapphire, silicon carbide, quartz, hexagonal boron nitride, cubic boron nitride, strontium titanate or glass. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film is a monolayer graphene, a double layer graphene or a three layer graphene. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film features a crystalline domain size of 1 200 micrometers. Original
The growth method of graphene according to claim 1, characterized in that: a growth temperature range of the graphene thin film is 800 ~ 1500 ° C, and a range of a growth time is ~ 60 minutes. Original
Canceled
5-8. Canceled
Canceled
Canceled
15-17. Canceled
Canceled
Materials described outside the worked examples.
graphene thin film
gaseous catalytic element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene crystalline domain size | 1–200 | graphene thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a process flow diagram of a growth method of a graphene of the present invention.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A growth method of graphene, comprising the following steps: Si: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S 3: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate -3 in step S2, the gas containing catalytic element is a gaseous compound or gaseous elementary substance; the gaseous compound is a hydride, carbide or hydrocarbon; the gaseous element substance comprises at least one of iron, nickel, silicon, cobalt, lead, tin, germanium, and silver; the carbon source comprises at least one of ethylene, acetylene, benzene, PM M A and graphite; by introducing the gaseous catalytic element into the growth chamber, catalytic atoms are absorbed around an edge of the graphene in the growth process to form a chemical bond which is weaker than a carbon-carbon bond, that enables to continue bonding with an active carbon g roup and a transposition between active carbon atoms and catalytic atoms is realized by metathesis to achieve the growth of g raphene. Currently amended
The growth method of graphene according to claim 1, characterized in that: in step S2, outside the growth chamber, a solid compound or a solid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber, or, a liquid compound or a liquid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber. Original
The growth method of graphene according to claim 1, characterized in that: in step S3, the graphene thin film is grown by a thermal chemical vapor deposition method, a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method or a pulsed laser deposition method. Original
The growth method of graphene according to claim 1, characterized in that: the insulating substrate is a sapphire, silicon carbide, quartz, hexagonal boron nitride, cubic boron nitride, strontium titanate or glass. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film is a monolayer graphene, a double layer graphene or a three layer graphene. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film features a crystalline domain size of 1 200 micrometers. Original
The growth method of graphene according to claim 1, characterized in that: a growth temperature range of the graphene thin film is 800 ~ 1500 ° C, and a range of a growth time is ~ 60 minutes. Original
Canceled
5-8. Canceled
Canceled
Canceled
15-17. Canceled
Canceled
Materials described outside the worked examples.
graphene thin film
gaseous catalytic element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene crystalline domain size | 1–200 | graphene thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a process flow diagram of a growth method of a graphene of the present invention.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A growth method of graphene, comprising the following steps: Si: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S 3: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate -3 in step S2, the gas containing catalytic element is a gaseous compound or gaseous elementary substance; the gaseous compound is a hydride, carbide or hydrocarbon; the gaseous element substance comprises at least one of iron, nickel, silicon, cobalt, lead, tin, germanium, and silver; the carbon source comprises at least one of ethylene, acetylene, benzene, PM M A and graphite; by introducing the gaseous catalytic element into the growth chamber, catalytic atoms are absorbed around an edge of the graphene in the growth process to form a chemical bond which is weaker than a carbon-carbon bond, that enables to continue bonding with an active carbon g roup and a transposition between active carbon atoms and catalytic atoms is realized by metathesis to achieve the growth of g raphene. Currently amended
The growth method of graphene according to claim 1, characterized in that: in step S2, outside the growth chamber, a solid compound or a solid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber, or, a liquid compound or a liquid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber. Original
The growth method of graphene according to claim 1, characterized in that: in step S3, the graphene thin film is grown by a thermal chemical vapor deposition method, a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method or a pulsed laser deposition method. Original
The growth method of graphene according to claim 1, characterized in that: the insulating substrate is a sapphire, silicon carbide, quartz, hexagonal boron nitride, cubic boron nitride, strontium titanate or glass. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film is a monolayer graphene, a double layer graphene or a three layer graphene. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film features a crystalline domain size of 1 200 micrometers. Original
The growth method of graphene according to claim 1, characterized in that: a growth temperature range of the graphene thin film is 800 ~ 1500 ° C, and a range of a growth time is ~ 60 minutes. Original
Canceled
5-8. Canceled
Canceled
Canceled
15-17. Canceled
Canceled
Materials described outside the worked examples.
graphene thin film
gaseous catalytic element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene crystalline domain size | 1–200 | graphene thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a process flow diagram of a growth method of a graphene of the present invention.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A growth method of graphene, comprising the following steps: Si: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S 3: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate -3 in step S2, the gas containing catalytic element is a gaseous compound or gaseous elementary substance; the gaseous compound is a hydride, carbide or hydrocarbon; the gaseous element substance comprises at least one of iron, nickel, silicon, cobalt, lead, tin, germanium, and silver; the carbon source comprises at least one of ethylene, acetylene, benzene, PM M A and graphite; by introducing the gaseous catalytic element into the growth chamber, catalytic atoms are absorbed around an edge of the graphene in the growth process to form a chemical bond which is weaker than a carbon-carbon bond, that enables to continue bonding with an active carbon g roup and a transposition between active carbon atoms and catalytic atoms is realized by metathesis to achieve the growth of g raphene. Currently amended
The growth method of graphene according to claim 1, characterized in that: in step S2, outside the growth chamber, a solid compound or a solid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber, or, a liquid compound or a liquid elementary substance containing the catalytic element is vaporized, and the vaporized gas is fed into the growth chamber. Original
The growth method of graphene according to claim 1, characterized in that: in step S3, the graphene thin film is grown by a thermal chemical vapor deposition method, a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method or a pulsed laser deposition method. Original
The growth method of graphene according to claim 1, characterized in that: the insulating substrate is a sapphire, silicon carbide, quartz, hexagonal boron nitride, cubic boron nitride, strontium titanate or glass. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film is a monolayer graphene, a double layer graphene or a three layer graphene. Original
The growth method of graphene according to claim 1, characterized in that: the graphene thin film features a crystalline domain size of 1 200 micrometers. Original
The growth method of graphene according to claim 1, characterized in that: a growth temperature range of the graphene thin film is 800 ~ 1500 ° C, and a range of a growth time is ~ 60 minutes. Original
Canceled
5-8. Canceled
Canceled
Canceled
15-17. Canceled
Canceled
Materials described outside the worked examples.
graphene thin film
gaseous catalytic element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows an atomic force microscopy micrograph of a graphene thin film grown in a first embodiment of a growth method of a graphene of the present invention. 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene crystalline domain size | 1–200 | graphene thin film |
Related documents with shared materials, methods, properties, or citations.
insulating substrate
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
insulating substrate
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
insulating substrate
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …
insulating substrate
Figure 3 shows a Raman spectrum of a graphene thin film grown in a first embodiment 2 of the growth method of a graphene of the present invention.
Figure 4 shows an atomic force microscopy micrograph of a graphene thin film grown in a second embodiment of a growth method of a graphene of the present invention.
Figure 5 shows a Raman spectrum of a graphene thin film grown in the second embodiment of a growth method of a graphene of the present invention. Illustrations of reference signs S 1- S₃ step Detailed Description of the Preferred Embodiments The embodiment modes of the present invention are …