Patent
US 10,060,029A GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF
Po-Yuan Teng
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,060,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is a schematic cross-section diagram illustrating a graphene manufacturing system according to an another embodiment of the invention. In this …
FIG. 2 is a temperature time curve illustrating when the catalyst and the carbon feedstock of the invention enter the working chamber. [0019]
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
FIG. 4 B are top view and side view illustrating graphene layers on a silicon wafer according to the invention. [0021]
FIG. 5 B are schematic diagrams illustrating seeds distribution on a work piece according to the invention. [0022] To facilitate understanding, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising the following steps of: preparing the work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 s cc m and 1,200 s c cm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated surface of the work piece. Original
The method for manufacturing graphene of claim 1, wherein the step of preparing a catalyst further comprises the following substeps: preparing a catalytic particle solution comprising a transition metal element; preparing a gasiform carrier; and making the gasiform carrier pass through the catalytic particle solution and carry parts of the catalytic particle solution to form the catalyst. Currently amended
A method for manufacturing graphene, applied to grow at least one g raphene layer [[s]] on an insulated surface of a work piece, comprising the following steps of: loading the work piece into a working chamber; introducing a catalyst comprises transition metal elements; introducing a carbon feedstock; 2- introducing hydrogen; mixing the carbon feedstock, the hydrogen, and the catalyst over the work piece; heating the work piece to a growth temperature and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst reacting with the hydrogen and the carbon feedstock so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form graphene layers directly on the insulated surface of the work piece; wherein the catalyst comprises a g asiform carrier and a catalytic particle solution comprising the transition metal elements; the working chamber is connected to a catalyst source comprising an inlet end, an outlet end and a l iq uid container; the inlet end is connected with a g as source; the l iq uid container is configured between the inlet end and the outlet end for containing the catalytic particle solution; the outlet end is connected with the working chamber; the g as source in p uts the g asiform carrier through the inlet end for making the g asiform carrier pass through the l iq uid container so that the g asiform carrier can carry parts of the catalytic particle solution to form the catalyst. Currently amended
The method for manufacturing graphene of claim 3, wherein the gasiform carrier is argon or helium. Previously presented
The method for manufacturing graphene of claim 3, wherein the transition metal elements are iron, cobalt, nickel, copper, zin c or iridium. Previously presented
The method for manufacturing graphene of claim 3, wherein the carbon feedstock comprises one of the following: methane, acetylene, ethylene, benzene, carbon monoxide and carbon dioxide. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece is made of silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or the combinations thereof. Previously presented
The method for manufacturing graphene of claim 3, wherein the working chamber further comprises a mixing chamber, the mixing chamber is configured among a catalyst source, a hydrogen source, a carbon feedstock source and the working chamber, the mixing chamber is used for mixing the carbon feedstock, the hydrogen and the catalyst before entering the reaction chamber. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece can be processed in advance by a plasma treatment; the plasma treatment is performed by a plasma having oxygen or argon. Previously presented
The method for manufacturing graphene of claim 3, wherein carbon seeds can be configured on the insulated surface of the work piece. Previously presented
The method for manufacturing graphene of are monolayer graphene films, multilayer graphene amended claim 3, wherein the growth temperature is claim 3, wherein the at least one graphene layers films, or combination thereof. Currently
Canceled
Canceled
The method for manufacturing graphene of between 200 0 C and 1,200 0 C. Previously presented
Materials described outside the worked examples.
graphene
catalyst comprising gasiform transition metal element
carbon feedstock
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–800 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,060,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is a schematic cross-section diagram illustrating a graphene manufacturing system according to an another embodiment of the invention. In this …
FIG. 2 is a temperature time curve illustrating when the catalyst and the carbon feedstock of the invention enter the working chamber. [0019]
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
FIG. 4 B are top view and side view illustrating graphene layers on a silicon wafer according to the invention. [0021]
FIG. 5 B are schematic diagrams illustrating seeds distribution on a work piece according to the invention. [0022] To facilitate understanding, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising the following steps of: preparing the work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 s cc m and 1,200 s c cm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated surface of the work piece. Original
The method for manufacturing graphene of claim 1, wherein the step of preparing a catalyst further comprises the following substeps: preparing a catalytic particle solution comprising a transition metal element; preparing a gasiform carrier; and making the gasiform carrier pass through the catalytic particle solution and carry parts of the catalytic particle solution to form the catalyst. Currently amended
A method for manufacturing graphene, applied to grow at least one g raphene layer [[s]] on an insulated surface of a work piece, comprising the following steps of: loading the work piece into a working chamber; introducing a catalyst comprises transition metal elements; introducing a carbon feedstock; 2- introducing hydrogen; mixing the carbon feedstock, the hydrogen, and the catalyst over the work piece; heating the work piece to a growth temperature and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst reacting with the hydrogen and the carbon feedstock so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form graphene layers directly on the insulated surface of the work piece; wherein the catalyst comprises a g asiform carrier and a catalytic particle solution comprising the transition metal elements; the working chamber is connected to a catalyst source comprising an inlet end, an outlet end and a l iq uid container; the inlet end is connected with a g as source; the l iq uid container is configured between the inlet end and the outlet end for containing the catalytic particle solution; the outlet end is connected with the working chamber; the g as source in p uts the g asiform carrier through the inlet end for making the g asiform carrier pass through the l iq uid container so that the g asiform carrier can carry parts of the catalytic particle solution to form the catalyst. Currently amended
The method for manufacturing graphene of claim 3, wherein the gasiform carrier is argon or helium. Previously presented
The method for manufacturing graphene of claim 3, wherein the transition metal elements are iron, cobalt, nickel, copper, zin c or iridium. Previously presented
The method for manufacturing graphene of claim 3, wherein the carbon feedstock comprises one of the following: methane, acetylene, ethylene, benzene, carbon monoxide and carbon dioxide. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece is made of silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or the combinations thereof. Previously presented
The method for manufacturing graphene of claim 3, wherein the working chamber further comprises a mixing chamber, the mixing chamber is configured among a catalyst source, a hydrogen source, a carbon feedstock source and the working chamber, the mixing chamber is used for mixing the carbon feedstock, the hydrogen and the catalyst before entering the reaction chamber. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece can be processed in advance by a plasma treatment; the plasma treatment is performed by a plasma having oxygen or argon. Previously presented
The method for manufacturing graphene of claim 3, wherein carbon seeds can be configured on the insulated surface of the work piece. Previously presented
The method for manufacturing graphene of are monolayer graphene films, multilayer graphene amended claim 3, wherein the growth temperature is claim 3, wherein the at least one graphene layers films, or combination thereof. Currently
Canceled
Canceled
The method for manufacturing graphene of between 200 0 C and 1,200 0 C. Previously presented
Materials described outside the worked examples.
graphene
catalyst comprising gasiform transition metal element
carbon feedstock
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–800 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,060,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is a schematic cross-section diagram illustrating a graphene manufacturing system according to an another embodiment of the invention. In this …
FIG. 2 is a temperature time curve illustrating when the catalyst and the carbon feedstock of the invention enter the working chamber. [0019]
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
FIG. 4 B are top view and side view illustrating graphene layers on a silicon wafer according to the invention. [0021]
FIG. 5 B are schematic diagrams illustrating seeds distribution on a work piece according to the invention. [0022] To facilitate understanding, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising the following steps of: preparing the work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 s cc m and 1,200 s c cm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated surface of the work piece. Original
The method for manufacturing graphene of claim 1, wherein the step of preparing a catalyst further comprises the following substeps: preparing a catalytic particle solution comprising a transition metal element; preparing a gasiform carrier; and making the gasiform carrier pass through the catalytic particle solution and carry parts of the catalytic particle solution to form the catalyst. Currently amended
A method for manufacturing graphene, applied to grow at least one g raphene layer [[s]] on an insulated surface of a work piece, comprising the following steps of: loading the work piece into a working chamber; introducing a catalyst comprises transition metal elements; introducing a carbon feedstock; 2- introducing hydrogen; mixing the carbon feedstock, the hydrogen, and the catalyst over the work piece; heating the work piece to a growth temperature and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst reacting with the hydrogen and the carbon feedstock so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form graphene layers directly on the insulated surface of the work piece; wherein the catalyst comprises a g asiform carrier and a catalytic particle solution comprising the transition metal elements; the working chamber is connected to a catalyst source comprising an inlet end, an outlet end and a l iq uid container; the inlet end is connected with a g as source; the l iq uid container is configured between the inlet end and the outlet end for containing the catalytic particle solution; the outlet end is connected with the working chamber; the g as source in p uts the g asiform carrier through the inlet end for making the g asiform carrier pass through the l iq uid container so that the g asiform carrier can carry parts of the catalytic particle solution to form the catalyst. Currently amended
The method for manufacturing graphene of claim 3, wherein the gasiform carrier is argon or helium. Previously presented
The method for manufacturing graphene of claim 3, wherein the transition metal elements are iron, cobalt, nickel, copper, zin c or iridium. Previously presented
The method for manufacturing graphene of claim 3, wherein the carbon feedstock comprises one of the following: methane, acetylene, ethylene, benzene, carbon monoxide and carbon dioxide. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece is made of silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or the combinations thereof. Previously presented
The method for manufacturing graphene of claim 3, wherein the working chamber further comprises a mixing chamber, the mixing chamber is configured among a catalyst source, a hydrogen source, a carbon feedstock source and the working chamber, the mixing chamber is used for mixing the carbon feedstock, the hydrogen and the catalyst before entering the reaction chamber. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece can be processed in advance by a plasma treatment; the plasma treatment is performed by a plasma having oxygen or argon. Previously presented
The method for manufacturing graphene of claim 3, wherein carbon seeds can be configured on the insulated surface of the work piece. Previously presented
The method for manufacturing graphene of are monolayer graphene films, multilayer graphene amended claim 3, wherein the growth temperature is claim 3, wherein the at least one graphene layers films, or combination thereof. Currently
Canceled
Canceled
The method for manufacturing graphene of between 200 0 C and 1,200 0 C. Previously presented
Materials described outside the worked examples.
graphene
catalyst comprising gasiform transition metal element
carbon feedstock
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–800 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,060,029Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B is a schematic cross-section diagram illustrating a graphene manufacturing system according to an another embodiment of the invention. In this …
FIG. 2 is a temperature time curve illustrating when the catalyst and the carbon feedstock of the invention enter the working chamber. [0019]
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
FIG. 4 B are top view and side view illustrating graphene layers on a silicon wafer according to the invention. [0021]
FIG. 5 B are schematic diagrams illustrating seeds distribution on a work piece according to the invention. [0022] To facilitate understanding, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising the following steps of: preparing the work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 s cc m and 1,200 s c cm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated surface of the work piece. Original
The method for manufacturing graphene of claim 1, wherein the step of preparing a catalyst further comprises the following substeps: preparing a catalytic particle solution comprising a transition metal element; preparing a gasiform carrier; and making the gasiform carrier pass through the catalytic particle solution and carry parts of the catalytic particle solution to form the catalyst. Currently amended
A method for manufacturing graphene, applied to grow at least one g raphene layer [[s]] on an insulated surface of a work piece, comprising the following steps of: loading the work piece into a working chamber; introducing a catalyst comprises transition metal elements; introducing a carbon feedstock; 2- introducing hydrogen; mixing the carbon feedstock, the hydrogen, and the catalyst over the work piece; heating the work piece to a growth temperature and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst reacting with the hydrogen and the carbon feedstock so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form graphene layers directly on the insulated surface of the work piece; wherein the catalyst comprises a g asiform carrier and a catalytic particle solution comprising the transition metal elements; the working chamber is connected to a catalyst source comprising an inlet end, an outlet end and a l iq uid container; the inlet end is connected with a g as source; the l iq uid container is configured between the inlet end and the outlet end for containing the catalytic particle solution; the outlet end is connected with the working chamber; the g as source in p uts the g asiform carrier through the inlet end for making the g asiform carrier pass through the l iq uid container so that the g asiform carrier can carry parts of the catalytic particle solution to form the catalyst. Currently amended
The method for manufacturing graphene of claim 3, wherein the gasiform carrier is argon or helium. Previously presented
The method for manufacturing graphene of claim 3, wherein the transition metal elements are iron, cobalt, nickel, copper, zin c or iridium. Previously presented
The method for manufacturing graphene of claim 3, wherein the carbon feedstock comprises one of the following: methane, acetylene, ethylene, benzene, carbon monoxide and carbon dioxide. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece is made of silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or the combinations thereof. Previously presented
The method for manufacturing graphene of claim 3, wherein the working chamber further comprises a mixing chamber, the mixing chamber is configured among a catalyst source, a hydrogen source, a carbon feedstock source and the working chamber, the mixing chamber is used for mixing the carbon feedstock, the hydrogen and the catalyst before entering the reaction chamber. Previously presented
The method for manufacturing graphene of claim 3, wherein the work piece can be processed in advance by a plasma treatment; the plasma treatment is performed by a plasma having oxygen or argon. Previously presented
The method for manufacturing graphene of claim 3, wherein carbon seeds can be configured on the insulated surface of the work piece. Previously presented
The method for manufacturing graphene of are monolayer graphene films, multilayer graphene amended claim 3, wherein the growth temperature is claim 3, wherein the at least one graphene layers films, or combination thereof. Currently
Canceled
Canceled
The method for manufacturing graphene of between 200 0 C and 1,200 0 C. Previously presented
Materials described outside the worked examples.
graphene
catalyst comprising gasiform transition metal element
carbon feedstock
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C are schematic diagrams illustrating the two-dimensional G peak, 2D peak and D peak of Raman spectrum respectively of the work piece after processing. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–800 Torr | — |
Related documents with shared materials, methods, properties, or citations.
catalytic particle solution comprising transition metal element
gasiform carrier (argon or helium)
transition metal elements (iron, cobalt, nickel, copper, zinc or iridium)
work piece substrate (silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or combinations thereof)
carbon seeds
hydrogen
H₂
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
catalytic particle solution comprising transition metal element
gasiform carrier (argon or helium)
transition metal elements (iron, cobalt, nickel, copper, zinc or iridium)
work piece substrate (silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or combinations thereof)
carbon seeds
hydrogen
H₂
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
catalytic particle solution comprising transition metal element
gasiform carrier (argon or helium)
transition metal elements (iron, cobalt, nickel, copper, zinc or iridium)
work piece substrate (silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or combinations thereof)
carbon seeds
hydrogen
H₂
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
catalytic particle solution comprising transition metal element
gasiform carrier (argon or helium)
transition metal elements (iron, cobalt, nickel, copper, zinc or iridium)
work piece substrate (silica, quartz, sapphire, glass, sodium chloride, silicon nitride, alumina or combinations thereof)
carbon seeds
hydrogen
H₂
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS