Patent
US 11,063,120METAL-GRAPHENE STRUCTURES
Luigi COLOMBO
US
Copyright © 2026 Matter42. All rights reserved.
Patent details
Patent
US 11,063,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic drawing of a fabrication process for an organic polymeric microlattice (scaffold) prior to coating with electroless plating, in …
FIG. 2 is a side view of a metal-graphene (or carbon nanotube (CNT)) lattice structure, in accordance with this disclosure; [0012]
FIG. 3 is a top view of a metal-graphene (or CNT) lattice structure, in accordance with this disclosure; [0013]
FIG. 4 is a side view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0014]
FIG. 5 is a top view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0015]
FIG. 6 is a side view of a metal-CNT layer structure, in accordance with this disclosure; [0016]
FIG. 7 is a top view of a metal-C NT layer structure, in accordance with this disclosure; [0017]
FIG. 8 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; [0018]
FIG. 9 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; and [0019]
FIG. 10 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,: a-unit cell formed of A interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The structure of claim 1, wherein the metal layer and the lattice are at least a portion of a semiconductor device. Original
The structure of claim 1, wherein the lattice includes graphene or carbon nanotubes. Previously presented
The structure of claim 1, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The structure of claim 1, wherein the lattice is contained entirely within the metal layer. Original
The structure of claim 1, wherein the interconnected graphene tubes are hollow tubes. Currently amended
The structure of claim 1, wherein the interconnected graphene tubes are filled with a nonconducting material. Currently amended
A bump structure for an integrated circuit package, the bump structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,,- a unit cell formed of -- interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The bump structure of claim 8, wherein the lattice comprises graphene or carbon nanotubes. Original
The bump structure of claim 8, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The bump structure of claim 8, wherein the lattice is contained entirely within the metal layer. Original
The bump structure of claim 8, wherein the interconnected are hollow tubes. Currently amended
The bump structure of claim 8, wherein the interconnected are filled with a non-conducting material. Currently amended
A method of forming a bump structure for an integrated circuit package, the method comprising: forming a metal layer; and forming a lattice at least partly within the metal layer, including by: photo-initiating polymerization of a monomer in a pattern of interconnected unit cells to form a polymer lattice, wherein the interconnected unit cells include at least a first unit cell formed of first interconnected segments, and a second unit cell formed of second interconnected segments; removing the unpolymerized monomer; coating the polymer lattice with a metal; removing the polymer lattice to leave a metal lattice; depositing graphitic carbon on the metal lattice; converting the graphitic carbon to graphene or carbon nanotubes; and removing the metal lattice. Withdrawn
The method of claim 14, wherein the lattice comprises carbon nanotubes. Withdrawn
The method of claim 14, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The method of claim 14, wherein the lattice is contained entirely within the metal layer. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are hollow tubes. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are tubes filled with a non-conducting material. Withdrawn
The method of claim 14, wherein the forming of the metal layer and the forming of the lattice are sequentially and successively repeated. Withdrawn
A structure comprising: a metal layer; and a graphene sheet having at least one hole; wherein the graphene sheet is contained at least partly within the metal layer. Withdrawn
The structure of claim 21, wherein the metal layer and the graphene sheet are at least a portion of a semiconductor device. Withdrawn
The structure of claim 21, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The structure of claim 21, wherein the graphene sheet is contained entirely within the metal layer. Withdrawn
The structure of claim 21, wherein the graphene sheet has a plurality of holes. Withdrawn
The structure of claim 21, wherein the structure further comprises another graphene sheets having at least one hole, wherein the graphene sheets are contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a graphene sheet at least partly within the metal layer, wherein the graphene sheet has at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; and stopping the graphene growth before nucleated islands of graphene fully grow to cover a surface of the metal layer thereby leaving the at least one hole in the graphene sheet, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; growing a graphene film without holes over a surface of the metal layer; forming a patterned photoresist on the graphene film; removing at least one exposed area of the graphene film via etching; and removing the photoresist thereby leaving the graphene sheet having at least one hole, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the method further comprises: depositing another metal layer on the graphene sheet, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the graphene sheet; forming another graphene sheet over a surface of the another metal layer, wherein the another graphene sheet has at least one hole; and depositing a further metal layer on the another graphene sheet, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another graphene sheet. Withdrawn
A structure comprising: a metal layer; and a layer of carbon nanotubes having at least one hole between at least two of the carbon nanotubes; wherein the layer is contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a layer of carbon nanotubes at least partly within the metal layer, wherein the layer of carbon nanotubes has at least one hole between at least two of the carbon nanotubes. Withdrawn
The method of claim 33, wherein the layer of carbon nanotubes is formed by: spin coating or growing a layer of carbon nanotubes having a porosity sufficient to leave the at least one hole in the layer of carbon nanotubes, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 33, wherein the method further comprises: depositing another metal layer on the layer of carbon nanotubes, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the layer of carbon nanotubes; forming another layer of carbon nanotubes over a surface of the another metal layer, wherein the another layer of carbon nanotubes has at least one hole; and depositing a further metal layer on the another layer of carbon nanotubes, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another layer of carbon nanotubes. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene lattice composite structure
bump structure for integrated circuit package
metal-graphene sheet composite structure
Materials described outside the worked examples.
metal layer
graphene tubes (interconnected)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–400 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,063,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic drawing of a fabrication process for an organic polymeric microlattice (scaffold) prior to coating with electroless plating, in …
FIG. 2 is a side view of a metal-graphene (or carbon nanotube (CNT)) lattice structure, in accordance with this disclosure; [0012]
FIG. 3 is a top view of a metal-graphene (or CNT) lattice structure, in accordance with this disclosure; [0013]
FIG. 4 is a side view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0014]
FIG. 5 is a top view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0015]
FIG. 6 is a side view of a metal-CNT layer structure, in accordance with this disclosure; [0016]
FIG. 7 is a top view of a metal-C NT layer structure, in accordance with this disclosure; [0017]
FIG. 8 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; [0018]
FIG. 9 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; and [0019]
FIG. 10 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,: a-unit cell formed of A interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The structure of claim 1, wherein the metal layer and the lattice are at least a portion of a semiconductor device. Original
The structure of claim 1, wherein the lattice includes graphene or carbon nanotubes. Previously presented
The structure of claim 1, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The structure of claim 1, wherein the lattice is contained entirely within the metal layer. Original
The structure of claim 1, wherein the interconnected graphene tubes are hollow tubes. Currently amended
The structure of claim 1, wherein the interconnected graphene tubes are filled with a nonconducting material. Currently amended
A bump structure for an integrated circuit package, the bump structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,,- a unit cell formed of -- interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The bump structure of claim 8, wherein the lattice comprises graphene or carbon nanotubes. Original
The bump structure of claim 8, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The bump structure of claim 8, wherein the lattice is contained entirely within the metal layer. Original
The bump structure of claim 8, wherein the interconnected are hollow tubes. Currently amended
The bump structure of claim 8, wherein the interconnected are filled with a non-conducting material. Currently amended
A method of forming a bump structure for an integrated circuit package, the method comprising: forming a metal layer; and forming a lattice at least partly within the metal layer, including by: photo-initiating polymerization of a monomer in a pattern of interconnected unit cells to form a polymer lattice, wherein the interconnected unit cells include at least a first unit cell formed of first interconnected segments, and a second unit cell formed of second interconnected segments; removing the unpolymerized monomer; coating the polymer lattice with a metal; removing the polymer lattice to leave a metal lattice; depositing graphitic carbon on the metal lattice; converting the graphitic carbon to graphene or carbon nanotubes; and removing the metal lattice. Withdrawn
The method of claim 14, wherein the lattice comprises carbon nanotubes. Withdrawn
The method of claim 14, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The method of claim 14, wherein the lattice is contained entirely within the metal layer. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are hollow tubes. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are tubes filled with a non-conducting material. Withdrawn
The method of claim 14, wherein the forming of the metal layer and the forming of the lattice are sequentially and successively repeated. Withdrawn
A structure comprising: a metal layer; and a graphene sheet having at least one hole; wherein the graphene sheet is contained at least partly within the metal layer. Withdrawn
The structure of claim 21, wherein the metal layer and the graphene sheet are at least a portion of a semiconductor device. Withdrawn
The structure of claim 21, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The structure of claim 21, wherein the graphene sheet is contained entirely within the metal layer. Withdrawn
The structure of claim 21, wherein the graphene sheet has a plurality of holes. Withdrawn
The structure of claim 21, wherein the structure further comprises another graphene sheets having at least one hole, wherein the graphene sheets are contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a graphene sheet at least partly within the metal layer, wherein the graphene sheet has at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; and stopping the graphene growth before nucleated islands of graphene fully grow to cover a surface of the metal layer thereby leaving the at least one hole in the graphene sheet, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; growing a graphene film without holes over a surface of the metal layer; forming a patterned photoresist on the graphene film; removing at least one exposed area of the graphene film via etching; and removing the photoresist thereby leaving the graphene sheet having at least one hole, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the method further comprises: depositing another metal layer on the graphene sheet, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the graphene sheet; forming another graphene sheet over a surface of the another metal layer, wherein the another graphene sheet has at least one hole; and depositing a further metal layer on the another graphene sheet, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another graphene sheet. Withdrawn
A structure comprising: a metal layer; and a layer of carbon nanotubes having at least one hole between at least two of the carbon nanotubes; wherein the layer is contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a layer of carbon nanotubes at least partly within the metal layer, wherein the layer of carbon nanotubes has at least one hole between at least two of the carbon nanotubes. Withdrawn
The method of claim 33, wherein the layer of carbon nanotubes is formed by: spin coating or growing a layer of carbon nanotubes having a porosity sufficient to leave the at least one hole in the layer of carbon nanotubes, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 33, wherein the method further comprises: depositing another metal layer on the layer of carbon nanotubes, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the layer of carbon nanotubes; forming another layer of carbon nanotubes over a surface of the another metal layer, wherein the another layer of carbon nanotubes has at least one hole; and depositing a further metal layer on the another layer of carbon nanotubes, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another layer of carbon nanotubes. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene lattice composite structure
bump structure for integrated circuit package
metal-graphene sheet composite structure
Materials described outside the worked examples.
metal layer
graphene tubes (interconnected)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–400 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,063,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic drawing of a fabrication process for an organic polymeric microlattice (scaffold) prior to coating with electroless plating, in …
FIG. 2 is a side view of a metal-graphene (or carbon nanotube (CNT)) lattice structure, in accordance with this disclosure; [0012]
FIG. 3 is a top view of a metal-graphene (or CNT) lattice structure, in accordance with this disclosure; [0013]
FIG. 4 is a side view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0014]
FIG. 5 is a top view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0015]
FIG. 6 is a side view of a metal-CNT layer structure, in accordance with this disclosure; [0016]
FIG. 7 is a top view of a metal-C NT layer structure, in accordance with this disclosure; [0017]
FIG. 8 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; [0018]
FIG. 9 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; and [0019]
FIG. 10 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,: a-unit cell formed of A interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The structure of claim 1, wherein the metal layer and the lattice are at least a portion of a semiconductor device. Original
The structure of claim 1, wherein the lattice includes graphene or carbon nanotubes. Previously presented
The structure of claim 1, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The structure of claim 1, wherein the lattice is contained entirely within the metal layer. Original
The structure of claim 1, wherein the interconnected graphene tubes are hollow tubes. Currently amended
The structure of claim 1, wherein the interconnected graphene tubes are filled with a nonconducting material. Currently amended
A bump structure for an integrated circuit package, the bump structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,,- a unit cell formed of -- interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The bump structure of claim 8, wherein the lattice comprises graphene or carbon nanotubes. Original
The bump structure of claim 8, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The bump structure of claim 8, wherein the lattice is contained entirely within the metal layer. Original
The bump structure of claim 8, wherein the interconnected are hollow tubes. Currently amended
The bump structure of claim 8, wherein the interconnected are filled with a non-conducting material. Currently amended
A method of forming a bump structure for an integrated circuit package, the method comprising: forming a metal layer; and forming a lattice at least partly within the metal layer, including by: photo-initiating polymerization of a monomer in a pattern of interconnected unit cells to form a polymer lattice, wherein the interconnected unit cells include at least a first unit cell formed of first interconnected segments, and a second unit cell formed of second interconnected segments; removing the unpolymerized monomer; coating the polymer lattice with a metal; removing the polymer lattice to leave a metal lattice; depositing graphitic carbon on the metal lattice; converting the graphitic carbon to graphene or carbon nanotubes; and removing the metal lattice. Withdrawn
The method of claim 14, wherein the lattice comprises carbon nanotubes. Withdrawn
The method of claim 14, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The method of claim 14, wherein the lattice is contained entirely within the metal layer. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are hollow tubes. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are tubes filled with a non-conducting material. Withdrawn
The method of claim 14, wherein the forming of the metal layer and the forming of the lattice are sequentially and successively repeated. Withdrawn
A structure comprising: a metal layer; and a graphene sheet having at least one hole; wherein the graphene sheet is contained at least partly within the metal layer. Withdrawn
The structure of claim 21, wherein the metal layer and the graphene sheet are at least a portion of a semiconductor device. Withdrawn
The structure of claim 21, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The structure of claim 21, wherein the graphene sheet is contained entirely within the metal layer. Withdrawn
The structure of claim 21, wherein the graphene sheet has a plurality of holes. Withdrawn
The structure of claim 21, wherein the structure further comprises another graphene sheets having at least one hole, wherein the graphene sheets are contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a graphene sheet at least partly within the metal layer, wherein the graphene sheet has at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; and stopping the graphene growth before nucleated islands of graphene fully grow to cover a surface of the metal layer thereby leaving the at least one hole in the graphene sheet, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; growing a graphene film without holes over a surface of the metal layer; forming a patterned photoresist on the graphene film; removing at least one exposed area of the graphene film via etching; and removing the photoresist thereby leaving the graphene sheet having at least one hole, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the method further comprises: depositing another metal layer on the graphene sheet, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the graphene sheet; forming another graphene sheet over a surface of the another metal layer, wherein the another graphene sheet has at least one hole; and depositing a further metal layer on the another graphene sheet, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another graphene sheet. Withdrawn
A structure comprising: a metal layer; and a layer of carbon nanotubes having at least one hole between at least two of the carbon nanotubes; wherein the layer is contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a layer of carbon nanotubes at least partly within the metal layer, wherein the layer of carbon nanotubes has at least one hole between at least two of the carbon nanotubes. Withdrawn
The method of claim 33, wherein the layer of carbon nanotubes is formed by: spin coating or growing a layer of carbon nanotubes having a porosity sufficient to leave the at least one hole in the layer of carbon nanotubes, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 33, wherein the method further comprises: depositing another metal layer on the layer of carbon nanotubes, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the layer of carbon nanotubes; forming another layer of carbon nanotubes over a surface of the another metal layer, wherein the another layer of carbon nanotubes has at least one hole; and depositing a further metal layer on the another layer of carbon nanotubes, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another layer of carbon nanotubes. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene lattice composite structure
bump structure for integrated circuit package
metal-graphene sheet composite structure
Materials described outside the worked examples.
metal layer
graphene tubes (interconnected)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–400 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,063,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic drawing of a fabrication process for an organic polymeric microlattice (scaffold) prior to coating with electroless plating, in …
FIG. 2 is a side view of a metal-graphene (or carbon nanotube (CNT)) lattice structure, in accordance with this disclosure; [0012]
FIG. 3 is a top view of a metal-graphene (or CNT) lattice structure, in accordance with this disclosure; [0013]
FIG. 4 is a side view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0014]
FIG. 5 is a top view of a metal-holey graphene sheet structure, in accordance with this disclosure; [0015]
FIG. 6 is a side view of a metal-CNT layer structure, in accordance with this disclosure; [0016]
FIG. 7 is a top view of a metal-C NT layer structure, in accordance with this disclosure; [0017]
FIG. 8 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; [0018]
FIG. 9 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure; and [0019]
FIG. 10 is a flowchart illustrating a method of forming a bump structure for an integrated circuit package, in accordance with this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,: a-unit cell formed of A interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The structure of claim 1, wherein the metal layer and the lattice are at least a portion of a semiconductor device. Original
The structure of claim 1, wherein the lattice includes graphene or carbon nanotubes. Previously presented
The structure of claim 1, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The structure of claim 1, wherein the lattice is contained entirely within the metal layer. Original
The structure of claim 1, wherein the interconnected graphene tubes are hollow tubes. Currently amended
The structure of claim 1, wherein the interconnected graphene tubes are filled with a nonconducting material. Currently amended
A bump structure for an integrated circuit package, the bump structure comprising: a metal layer; and interconnected unit cells forming a lattice contained at least partly within the metal layer, including,,- a unit cell formed of -- interconnected graphene tubes wherein the metal layer protrudes through holes within the lattice. Currently amended
The bump structure of claim 8, wherein the lattice comprises graphene or carbon nanotubes. Original
The bump structure of claim 8, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Original
The bump structure of claim 8, wherein the lattice is contained entirely within the metal layer. Original
The bump structure of claim 8, wherein the interconnected are hollow tubes. Currently amended
The bump structure of claim 8, wherein the interconnected are filled with a non-conducting material. Currently amended
A method of forming a bump structure for an integrated circuit package, the method comprising: forming a metal layer; and forming a lattice at least partly within the metal layer, including by: photo-initiating polymerization of a monomer in a pattern of interconnected unit cells to form a polymer lattice, wherein the interconnected unit cells include at least a first unit cell formed of first interconnected segments, and a second unit cell formed of second interconnected segments; removing the unpolymerized monomer; coating the polymer lattice with a metal; removing the polymer lattice to leave a metal lattice; depositing graphitic carbon on the metal lattice; converting the graphitic carbon to graphene or carbon nanotubes; and removing the metal lattice. Withdrawn
The method of claim 14, wherein the lattice comprises carbon nanotubes. Withdrawn
The method of claim 14, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The method of claim 14, wherein the lattice is contained entirely within the metal layer. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are hollow tubes. Withdrawn
The method of claim 14, wherein the first and second interconnected segments are tubes filled with a non-conducting material. Withdrawn
The method of claim 14, wherein the forming of the metal layer and the forming of the lattice are sequentially and successively repeated. Withdrawn
A structure comprising: a metal layer; and a graphene sheet having at least one hole; wherein the graphene sheet is contained at least partly within the metal layer. Withdrawn
The structure of claim 21, wherein the metal layer and the graphene sheet are at least a portion of a semiconductor device. Withdrawn
The structure of claim 21, wherein the metal layer comprises at least one element selected from the group consisting of W, Cu, Al, Ni, Pd, Au, Ag, Co, and combinations thereof. Withdrawn
The structure of claim 21, wherein the graphene sheet is contained entirely within the metal layer. Withdrawn
The structure of claim 21, wherein the graphene sheet has a plurality of holes. Withdrawn
The structure of claim 21, wherein the structure further comprises another graphene sheets having at least one hole, wherein the graphene sheets are contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a graphene sheet at least partly within the metal layer, wherein the graphene sheet has at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; and stopping the graphene growth before nucleated islands of graphene fully grow to cover a surface of the metal layer thereby leaving the at least one hole in the graphene sheet, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the graphene sheet is formed by: using the metal layer for the catalysis of graphene growth by chemical vapor deposition (CVD) using a carbon-containing gas; growing a graphene film without holes over a surface of the metal layer; forming a patterned photoresist on the graphene film; removing at least one exposed area of the graphene film via etching; and removing the photoresist thereby leaving the graphene sheet having at least one hole, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 28, wherein the method further comprises: depositing another metal layer on the graphene sheet, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the graphene sheet; forming another graphene sheet over a surface of the another metal layer, wherein the another graphene sheet has at least one hole; and depositing a further metal layer on the another graphene sheet, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another graphene sheet. Withdrawn
A structure comprising: a metal layer; and a layer of carbon nanotubes having at least one hole between at least two of the carbon nanotubes; wherein the layer is contained at least partly within the metal layer. Withdrawn
A method of forming a structure, the method comprising: forming a metal layer; and forming a layer of carbon nanotubes at least partly within the metal layer, wherein the layer of carbon nanotubes has at least one hole between at least two of the carbon nanotubes. Withdrawn
The method of claim 33, wherein the layer of carbon nanotubes is formed by: spin coating or growing a layer of carbon nanotubes having a porosity sufficient to leave the at least one hole in the layer of carbon nanotubes, whereby a portion of the metal layer is exposed through the at least one hole. Withdrawn
The method of claim 33, wherein the method further comprises: depositing another metal layer on the layer of carbon nanotubes, wherein the another metal layer forms a metal diffusion bond with a portion of the formed metal layer through the at least one hole in the layer of carbon nanotubes; forming another layer of carbon nanotubes over a surface of the another metal layer, wherein the another layer of carbon nanotubes has at least one hole; and depositing a further metal layer on the another layer of carbon nanotubes, wherein the further metal layer forms a metal diffusion bond with a portion of the another metal layer through the at least one hole in the another layer of carbon nanotubes. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene lattice composite structure
bump structure for integrated circuit package
metal-graphene sheet composite structure
Materials described outside the worked examples.
metal layer
graphene tubes (interconnected)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–400 µm | — |
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