d "TRANSISTOR WITH FLUORINATED GRAPHENE SPACER," the disclosures of which are

Ye LU

Patent

Atlas literature

Patent

US 10,665,678

d "TRANSISTOR WITH FLUORINATED GRAPHENE SPACER," the disclosures of which are

Ye LU

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 10 dependent

1
Independentfluorocarbon spacerlow-K spacerIC transistor with fluorocarbon spacers
A method of fabricating an integrated circuit (IC) device, comprising: growing a ﬁrst ﬂuorocarbon spacer between a gate and a source contact; growing a second ﬂuorocarbon spacer between the gate and a drain contact; and growing low-K spacers between the ﬁrst ﬂuorocarbon spacer and the source contact, and between the second ﬂuorocarbon spacer and the drain contact. Original
1. 2
  Dependent← claim 1fluorocarbon spacerlow resistivity carbon alloy
  The method of claim 1, in which growing the ﬁrst ﬂuorocarbon spacer and the second ﬂuorocarbon spacer comprises: depositing a sacriﬁcial catalyst layer on sidewalls of the gate; diﬀusing a low resistivity carbon alloy through the sacriﬁcial catalyst layer; removing the sacriﬁcial catalyst layer; and ﬂuorinating the low resistivity carbon alloy. Original
2. 4
  Dependent← claim 1fluorocarbon spacerlow resistivity carbon alloy
  The method of claim 1, in which growing the ﬁrst ﬂuorocarbon spacer and the second ﬂuorocarbon spacer comprises: depositing a thin catalyst layer on sidewalls of the gate; decomposing carbonaceous precursors from the thin catalyst layer; and ﬂuorinating a low resistivity carbon alloy. Original
3. 5
  Dependent← claim 1fluorographene
  The method of claim 1, in which the ﬁrst ﬂuorocarbon spacer and the second ﬂuorocarbon spacer comprise ﬂuorographene spacers. Original
4. 6
  Dependent← claim 1fluorocarbon spacer
  The method of claim 1, in which a thickness of the ﬁrst ﬂuorocarbon spacer is at least 0.3 nanometers. Original
5. 7
  Dependent← claim 1
  The method of claim 1, in which the IC device is integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a ﬁxed location data unit. Original
8
Independentfluorocarbon spacerlow-K spacerIC transistor with fluorocarbon spacers
An integrated circuit (IC) device, comprising: a semiconductor structure; a source contact on the semiconductor structure; a drain contact on the semiconductor structure; a gate on the semiconductor structure; a ﬁrst ﬂuorocarbon spacer between the gate and the source contact; a second ﬂuorocarbon spacer between the gate and the drain contact, the ﬁrst ﬂuorocarbon spacer and the second ﬂuorocarbon spacer contacting sidewalls of the gate; and ﬁrst means for spacing between the ﬁrst ﬂuorocarbon spacer and the source contact, and second means for spacing between the second ﬂuorocarbon spacer and the drain contact. Currently amended
1. 10
  Dependent← claim 8IC transistor with fluorocarbon spacersFinFETgate all around (GAA) transistor
  The IC device of claim 8, in which the semiconductor structure comprises a ﬁn, a planar transistor structure, or a gate all around (GAA) transistor structure. Original
2. 11
  Dependent← claim 8
  The IC device of claim 8, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a ﬁxed location data unit. Original
3. 12
  Dependent← claim 8fluorographene
  The IC device of claim 8, in which the ﬁrst ﬂuorocarbon spacer and the second ﬂuorocarbon spacer comprise ﬂuorographene spacers. New
4. 13
  Dependent← claim 8fluorocarbon spacer
  The IC device of claim 8, in which a thickness of the ﬁrst ﬂuorocarbon spacer is at least 0.3 nanometers. New
9
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

IC transistor with fluorocarbon spacers

drain_contactdrain contact

source_contactsource contact

low-K spacerlow K spacer drain side

low-K spacerlow K spacer source side

fluorocarbon spacersecond fluorocarbon spacer

fluorocarbon spacer

Materials

Materials described outside the worked examples.

fluorocarbon spacer

Gate Spacer

low-K spacer

Gate Spacer

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Process details

method variant:CVD on sacrificial catalyst layer; diffuse low resistivity carbon alloy through sacrificial catalyst layer; remove catalyst; fluorinate carbon alloy

Materials:fluorocarbon spacerfluorographene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
effective spacer K value with fluorographene	1.6	fluorographene
conventional low-K spacer K value (SiBCN)

Why these are connected

Related documents with shared materials, methods, properties, or citations.

d "TRANSISTOR WITH FLUORINATED GRAPHENE SPACER," the disclosures of which are | Matter42 Literature